APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

1 Jun 1971

Volume 18, Issue 11, pp. 475-524


DIRECT DETERMINATION OF OPTICAL GAIN IN SEMICONDUCTOR CRYSTALS

K. L. Shaklee and R. F. Leheny

Appl. Phys. Lett. 18, 475 (1971); http://dx.doi.org/10.1063/1.1653501 (3 pages) | Cited 169 times

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
We report a new technique for measuring the stimulated emission spectrum and optical gain of semiconductor materials. Amplified spontaneous emission is used to determine the gain factor by relating the measured variation in light output to variation in the length of the excitation beam. Results for CdS crystals at 2°K are presented that indicate net gains as high as 160 cm−1 at λ = 4907 Å are possible with ∼ 12‐MW∕cm2 optical pump power density from a nitrogen laser.

REDUCTION OF DOPPLER BROADENING OF SPECTRAL LINES IN FAST‐BEAM SPECTROSCOPY

John O. Stoner and John A. Leavitt

Appl. Phys. Lett. 18, 477 (1971); http://dx.doi.org/10.1063/1.1653502 (3 pages) | Cited 51 times

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
We show that the Doppler broadening, which arises in a fast‐beam light source because of the high speed of the emitters and the nonzero acceptance angle of the spectrometer, can often be practically eliminated by proper adjustment of the spectrometer.

GENERAL CONDITIONS FOR GROWTH‐INDUCED ANISOTROPY IN GARNETS

E. M. Gyorgy, A. Rosencwaig, E. I. Blount, W. J. Tabor, and M. E. Lines

Appl. Phys. Lett. 18, 479 (1971); http://dx.doi.org/10.1063/1.1653503 (2 pages) | Cited 40 times

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
General symmetry conditions for models dealing with garnets exhibiting growth‐induced noncubic magnetic anisotropies are presented. Under certain probable conditions all models are reduced to two parameters which can be related to the appropriate physical conditions.

PICOSECOND DYE LASER PULSES USING NITROGEN LASER PUMPING

R. J. von Gutfeld

Appl. Phys. Lett. 18, 481 (1971); http://dx.doi.org/10.1063/1.1653504 (2 pages) | Cited 6 times

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
The nitrogen laser has been used to obtain partial mode locking of rhodamine 6G. The resulting pulses are tunable over ∼ 200 Å with a pulse full width at half‐power of ∼ 150 psec. The maximum modulation depth obtained is ∼ 80%.

NEW cw LASER TRANSITIONS IN Se II

M. B. Klein and W. T. Silfvast

Appl. Phys. Lett. 18, 482 (1971); http://dx.doi.org/10.1063/1.1653505 (4 pages) | Cited 21 times

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
We have observed 22 new laser transitions in singly ionized selenium, ranging in wave‐length from 4467 Å to 1. 26 μ. Output powers varying from 3 to 50 mW have been measured over the entire spectral range of operation in a 2‐m discharge tube. This same tube produces a combined output power of 250 mW on the six strongest blue‐green transitions. We have also studied the current saturation behavior of the laser and the effects of isotope structure on the laser output.

TUNABLE ORGANIC DYE LASER AS AN EXCITATION SOURCE FOR ATOMIC‐FLAME FLUORESCENCE SPECTROSCOPY

M. B. Denton and H. V. Malmstadt

Appl. Phys. Lett. 18, 485 (1971); http://dx.doi.org/10.1063/1.1653506 (3 pages) | Cited 19 times

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
A laser‐pumped tunable organic dye laser is shown to excite atomic‐flame fluorescence of the 5535. 5‐Å barium resonance line. Ultrasonic nebulization reduces light scattering, producing a straight‐line analytical working curve suitable for quantitative analysis.

CARBON MONOXIDE GAS DYNAMIC LASER

William S. Watt

Appl. Phys. Lett. 18, 487 (1971); http://dx.doi.org/10.1063/1.1653507 (3 pages) | Cited 8 times

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
cw laser oscillation has been obtained from supersonic flows of CO in argon which are expanded from a high‐temperature reservoir. The maximum power observed was 20 W from a gas mixture which had been processed to 85 atm and approximately 2000°K. These results appear to confirm that vibrational exchange among the vibrational states of a single diatomic species can lead to preferential population of the upper states and thus produce inversions among these states.

CURRENT INDUCED SELF‐FIELD EFFECT IN Pb☒Cu☒Pb JOSEPHSON JUNCTIONS

M. Mitani, K. Aihara, and N. Hara

Appl. Phys. Lett. 18, 489 (1971); http://dx.doi.org/10.1063/1.1653508 (2 pages)

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
A recovery phenomenon from the mixed to the superconducting state was observed in Pb☒Cu☒Pb junctions even when the tunneling current was increased over the maximum dc Josephson current. This phenomenon is well interpreted from the inclination effect of the Fraunhofer diffraction pattern because of large dc Josephson currents.

POLARIZATION STUDIES OF RAMAN SCATTERING FROM InSb MAGNETOPLASMAS

C. K. N. Patel and K. H. Yang

Appl. Phys. Lett. 18, 491 (1971); http://dx.doi.org/10.1063/1.1653509 (4 pages) | Cited 6 times

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
We report investigations of polarization selection rules for Raman scattering from semi‐conductor magnetoplasmas. Our results for the Δl = 1 and the spin‐flip process do not agree with predictions, while those for the Δl = 2 process satisfy the predicted rules. The disagreement points to the need for further theoretical work.

VARIABLY SPACED GIANT PULSES FROM MULTIPLE LASER CAVITIES IN A SINGLE LASING MEDIUM

M. J. Landry

Appl. Phys. Lett. 18, 494 (1971); http://dx.doi.org/10.1063/1.1653510 (3 pages) | Cited 2 times

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
Multiple laser cavities have been established in a single lasing medium. Single giant pulses with a time duration of 40 nsec have been emitted from each cavity and spaced less than 80 nsec to 4 μsec apart. The 0.4‐mm spatial separation between the cavities indicates that many cavities could be established in a single lasing medium. Sequentially switching large numbers of cavities, repumping depleted regions, and reswitching could result in a high‐repetition‐rate giant‐pulse laser system for use in photography and holography.

POLY(METHYL METHACRYLATE) DYE LASER WITH INTERNAL DIFFRACTION GRATING RESONATOR

I. P. Kaminow, H. P. Weber, and E. A. Chandross

Appl. Phys. Lett. 18, 497 (1971); http://dx.doi.org/10.1063/1.1653511 (3 pages) | Cited 47 times

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
We describe a compact monochromatic (0.1 Å) dye laser, which consists of a pair of Bragg phase gratings photodielectrically induced inside a bulk sample of poly (methyl methacrylate), PMMA, doped with rhodamine 6G. The laser frequency can be selected by choice of grating period from the usual broad (∼200 Å) emission spectrum of the dye.

DETERMINATION OF THE SECOND‐HARMONIC‐GENERATION COEFFICIENT AND THE LINEAR ELECTRO‐OPTIC COEFFICIENT IN LiIO3 THROUGH OBLIQUE RAMAN PHONON MEASUREMENTS

W. S. Otaguro, E. Wiener‐Avnear, and S. P. S. Porto

Appl. Phys. Lett. 18, 499 (1971); http://dx.doi.org/10.1063/1.1653512 (3 pages) | Cited 12 times

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
A new method for determing the second‐harmonic‐generation coefficient dijk and the linear electro‐optic term rijk as well as their relative sign from oblique phonon Raman‐scattering experiments is introduced. This method is applicable to piezoelectric crystals of orthorhombic or higher symmetry, where the oblique phonon cross section can be measured. The value of d13 and r13 for LiIO3 were determined.

THE ADJUSTMENT OF MOS TRANSISTOR THRESHOLD VOLTAGE BY ION IMPLANTATION

M. R. Mac Pherson

Appl. Phys. Lett. 18, 502 (1971); http://dx.doi.org/10.1063/1.1653513 (3 pages) | Cited 20 times

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
Two new techniques have been demonstrated to set the threshold voltage of p‐channel MOS transistors and integrated circuits. Both processes employ ion implantation to alter the doping profile near the Si☒SiO2 interface. The first centers the ion distribution at the interface while the second places it well inside the silicon. Thresholds may be modified from enhancement through depletion mode. Either method is compatible with standard MOS processes.

OPTICAL PULSE COMPRESSION BY FOCUSING IN A RESONANT ABSORBER

H. M. Gibbs and R. E. Slusher

Appl. Phys. Lett. 18, 505 (1971); http://dx.doi.org/10.1063/1.1653514 (3 pages) | Cited 23 times

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
A 10‐nsec optical pulse was shortened to 1 nsec by interacting coherently with a simple atomic absorber. The experimental results are in agreement with a computer solution of coupled Maxwell and Schrödinger equations for a uniform spherical propagating wave.

HOLOGRAPHIC STORAGE IN DOPED BARIUM SODIUM NIOBATE (Ba2NaNb5O15)

J. J. Amodei, D. L. Staebler, and A. W. Stephens

Appl. Phys. Lett. 18, 507 (1971); http://dx.doi.org/10.1063/1.1653515 (3 pages) | Cited 29 times

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
This paper describes the results obtained using doped crystals of Ba2NaNb5O15 for phase holographic storage. Very short‐lived holograms with less than 1% diffraction efficiencies were obtained in nominally pure crystals. Doping with Fe and Mo yields holograms with much longer decay times and diffraction efficiencies of 67% in a 0.32‐cm‐thick crystal. The energy density required to reach 40% diffraction efficiency was 6 J∕cm2.

FORMATION OF SiC IN SILICON BY ION IMPLANTATION

J. A. Borders, S. T. Picraux, and W. Beezhold

Appl. Phys. Lett. 18, 509 (1971); http://dx.doi.org/10.1063/1.1653516 (3 pages) | Cited 96 times

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
The production of SiC in single‐crystal silicon by C12+ implantation to fluences of 1017∕cm2‐side followed by annealing has been detected by the characteristic infrared absorption of the TO phonon of SiC. Immediately following room‐temperature implantation and after 20‐min isochronal anneals up to temperatures ≤ 825°C, a previously unreported broad absorption band centered at 700–725 cm−1 is observed. SiC is observed to form at temperatures ≈ 850°C. For anneals ≥ 850°C, most of the broad absorption band shifts into the SiC‐TO phonon absorption band. From the infrared absorption measurements together with the results of He+ backscattering, we conclude that about half of the implanted atoms are incorporated into microregions of SiC which are surrounded by bulk silicon.

ASSIGNMENTS OF THE FAR‐INFRARED SO2 LASER LINES

Gunter Hubner, J. C. Hassler, P. D. Coleman, and Guy Steenbeckeliers

Appl. Phys. Lett. 18, 511 (1971); http://dx.doi.org/10.1063/1.1653517 (3 pages) | Cited 4 times

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
Nine out of ten observed laser transitions in SO2 have been assigned involving two irregular Fermi interactions between ν1, K−1=14 and 2ν2, K−1=16 at J=26 and 27. From these assignments, a new laser line at 206 μm was predicted and found.

ELECTRIC FIELDS FOR PREBREAKDOWN PARTIAL DISCHARGES IN LIQUID DIELECTRICS

Alfred Fafarman

Appl. Phys. Lett. 18, 513 (1971); http://dx.doi.org/10.1063/1.1653518 (3 pages)

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
The existence of prebreakdown collision‐ionization processes in liquid dielectrics was observed reproducibly far below breakdown, using a coaxial cylindrical electrode geometry. Preliminary values of the critical electric fields, Epd, for ac prebreakdown partial discharges were measured for three liquid dielectrics: a silicate ester, Oronite Flowcool 180, Epd ≃ 520 ± 100 kV∕cm rms; a mineral oil, Wemco C, Epd ≃ 610 ± 30 kV∕cm rms; a dimethyl silicone, dc 331, Epd > 1000 kV∕cm rms. However, prebreakdown partial discharges were not observed for the coaxial‐cylindrical geometry with close spacings when the breakdown electric fields were lower than the above fields.

MODE LOCKING OF THE ARGON ION LASER IN THE ULTRAVIOLET

S. J. Heising, S. M. Jarrett, and D. J. Kuizenga

Appl. Phys. Lett. 18, 516 (1971); http://dx.doi.org/10.1063/1.1653519 (3 pages) | Cited 5 times

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
The ultraviolet lines at 3511 and 3638 Å from an argon ion laser have been mode locked using an intracavity acousto‐optic modulator. Pulses of 0.2 nsec and 10‐mW average power have been obtained. Pulses of 0.17 nsec and 750‐mW average power at the strong 5145‐Å line are obtained in the same laser. These time durations and direct spectral observation demonstrate a larger bandwidth in the argon ion laser than previously reported.

DIRECT OBSERVATION OF LONG‐RANGE MIGRATION OF SELF‐INTERSTITIAL ATOMS IN STAGE I OF IRRADIATED PLATINUM

P. Pétroff and D. N. Seidman

Appl. Phys. Lett. 18, 518 (1971); http://dx.doi.org/10.1063/1.1653520 (3 pages) | Cited 10 times

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
The motion of single self‐interstitial atoms (SIA's) in stage I of irradiated platinum was observed directly by field ion microscopy. A specimen irradiated at a temperature of 10°K with 20‐keV Pt+ ions was found to contain immobile SIA's in the bulk at this temperature, as determined via pulse‐field evaporation experiments. Direct observation of specimens, irradiated with 20‐ or 30‐keV Pt+ ions, during warming experiments from 10 to 70°K showed that a flux of SIA's crossed the surface of the specimens between 13 and 25°K. Application of a diffusion model to the data yielded a value of ∼ 0.06 eV for the enthalpy change of migration and a diffusion coefficient of ∼ 0.5 exp(−0.06 eV∕kT) cm2 sec−1 for the SIA.

ELECTROREFLECTANCE AND THERMOREFLECTANCE OF ZnSiAs2

Clarence C. Y. Kwan and John C. Woolley

Appl. Phys. Lett. 18, 520 (1971); http://dx.doi.org/10.1063/1.1653521 (3 pages) | Cited 9 times

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
Measurements of electroreflectance as a function of temperature in the range 195–350°K and of thermoreflectance at room temperature have been made on chalcopyrite‐type ZnSiAs2 in the energy range 1.9–3.5 eV. The identification of the various peaks in the E0 and E1 complexes is discussed and the temperature coefficient of the various transitions determined.

NEW MODEL FOR LASER DOPPLER VELOCITY MEASUREMENT ON TURBULENT FLOW

C. P. Wang

Appl. Phys. Lett. 18, 522 (1971); http://dx.doi.org/10.1063/1.1653523 (3 pages) | Cited 7 times

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
Using the theory of optical‐mixing spectroscopy, a new model is proposed for the laser Doppler velocity measurement on both laminar and turbulent flow, and a system using two incident light beams is described.
FREE

ERRATUM: DETECTION OF SURFACE WAVES WITH GaAs BULK EFFECT DIODE

H. Hayakawa, S. Takada, T. T. Ishiguro, and N. Mikoshiba

Appl. Phys. Lett. 18, 524 (1971); http://dx.doi.org/10.1063/1.1653524 (1 page)

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Abstract Unavailable
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close