Isochronal annealing of radiation‐induced changes in the conductivity, the carrier concentration, and the Hall mobility of CdS crystals has been studied over the temperature range 90–410 °K. High‐conductivity crystals were irradiated by 10‐MeV electrons near liquid‐nitrogen temperature. The conductivity σ, the carrier concentration n, and the Hall mobility μ are decreased by irradiation. Three distinct annealing stages IN, IIN, and IIIN were found. The reverse annealing process slightly occurs in stage IN, 100–130 °K. Appreciable normal recovery occurs in stages IIN, 130–230 °K and IIIN, 330–410 °K. After the annealing at 410 °K the percentages of total recovery of σ, n, and μ amount to 74, 78, and 94% of the changes, respectively. The recovery in stage IIN and stage IIIN suggests that two kinds of induced acceptors which also act as charged scattering centers begin to migrate in the temperature ranges; one moves in stage IIN, and the other in stage IIIN.