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1 Mar 1971

Volume 18, Issue 5, pp. 167-208


OBSERVATION OF INTENSE SUPERRADIANT EMISSION IN THE HIGH‐GAIN INFRARED TRANSITIONS OF HF AND DF MOLECULES

J. Goldhar, R. M. Osgood, and A. Javan

Appl. Phys. Lett. 18, 167 (1971); http://dx.doi.org/10.1063/1.1653610 (3 pages) | Cited 10 times

Online Publication Date: 22 October 2003

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Intense stimulated emission (superradiance) is obtained in several high‐gain transitions of HF and DF molecules. The narrowing of the linewidths of the high‐gain transitions are observed in detail. Pulsed energy and peak powers are comparable with those obtainable in a similar transverse CO2 laser.

OXYGEN K EMISSION SPECTRA OF ICE, SOLID CARBON DIOXIDE, AND SOLID ALCOHOLS

A. S. Koster

Appl. Phys. Lett. 18, 170 (1971); http://dx.doi.org/10.1063/1.1653611 (2 pages) | Cited 5 times

Online Publication Date: 22 October 2003

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A long‐wavelength x‐ray spectrometer with a sample holder cooled by liquid nitrogen was used to obtained oxygen K spectra from ice, solid CO2, and solid alcohols. The nature of the peaks is discussed.

HOT‐PRESSED CdCr2S4: AN EFFICIENT MAGNETO‐OPTIC MATERIAL

R. K. Ahrenkiel, F. Moser, E. Carnall, T. Martin, D. Pearlman, S. L. Lyu, T. Coburn, and T. H. Lee

Appl. Phys. Lett. 18, 171 (1971); http://dx.doi.org/10.1063/1.1653612 (3 pages) | Cited 4 times

Online Publication Date: 22 October 2003

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The ferromagnetic semiconductor CdCr2S4 has been prepared in the form of hot‐pressed polycrystalline samples having high optical transmission and Faraday rotation in the near‐ir spectral region. In the region 900–1400 nm, the figure of merit exceeds 60° dB−1 at 4.2 °K and 30° dB−1 at 80 °K. It is thus an efficient and potentially useful magneto‐optic material at liquid‐nitrogen temperature.

A TRANSVERSE FLOW cw HCl CHEMICAL LASER

James A. Glaze, Jack Finzi, and William F. Krupke

Appl. Phys. Lett. 18, 173 (1971); http://dx.doi.org/10.1063/1.1653613 (3 pages) | Cited 10 times

Online Publication Date: 22 October 2003

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A cw HCl chemical laser utilizing fast flow and transverse geometry is described. The reaction Cl + HI → HCl + I + 32 kcal∕mole is used to achieve gains in excess of 2%∕cm. Up to 70 mW of multiline power on several P branch lines of the 2→1 and 1→0 vibrational transitions has been observed.

QUANTITATIVE ANALYSIS OF THE DEPENDENCE OF CO2 LASER PERFORMANCE ON ELECTRIC DISCHARGE PROPERTIES

M. C. Fowler

Appl. Phys. Lett. 18, 175 (1971); http://dx.doi.org/10.1063/1.1653614 (4 pages) | Cited 10 times

Online Publication Date: 22 October 2003

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Reported values of electron‐molecule energy transfer rate constants are combined with atom∕molecule‐molecule and radiative energy transfer rate constants in an analysis of the conversion of electron energy to optical energy at 10.6μ in an electric discharge containing CO2, N2, and He. The small‐signal gain and the saturation intensity are calculated as functions of the electron density and gas temperature in the discharge. The calculated values of these quantities are consistent with experimentally determined values. The detrimental effect of high gas temperature on small‐signal gain is found to be the single most important factor influencing the efficiency of the discharge plasma as an energy conversion medium.

LOW‐TEMPERATURE MIGRATION OF SILICON IN THIN LAYERS OF GOLD AND PLATINUM

A. Hiraki, M‐A. Nicolet, and J. W. Mayer

Appl. Phys. Lett. 18, 178 (1971); http://dx.doi.org/10.1063/1.1653615 (4 pages) | Cited 98 times

Online Publication Date: 22 October 2003

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The backscattering method is employed to obtain microscopic information about solid‐solid reactions of Si with thin layers (500–2000 Å) of both vacuum‐evaporated Au and sputtered Pt. A remarkable observation is the migration of Si atoms into Au and Pt at relatively low temperatures (150 and 350 °C, respectively). Migration of Si in Pt induces first the formation of Pt2Si‐like compounds and then PtSi. In the Au☒Si system, on the other hand, Si moves through and accumulates on the Au surface in the form of SiO2 under an oxidizing heat‐treatment atmosphere.

POWER AND LINEWIDTH OF TUNABLE STIMULATED FAR‐INFRARED EMISSION IN LiNbO3

B. C. Johnson, H. E. Puthoff, J. SooHoo, and S. S. Sussman

Appl. Phys. Lett. 18, 181 (1971); http://dx.doi.org/10.1063/1.1653616 (3 pages) | Cited 24 times

Online Publication Date: 22 October 2003

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The power‐versus‐wavelength characteristic for a high‐power, continuously tunable far‐infrared source has been experimentally determined and compared with theory. Utilizing a Q‐switched ruby laser as the pump and stimulated polariton scattering in the crystal LiNbO3 as the scattering mechanism, peak powers outside the crystal of ∼ 3 W at 200 μ are observed without crystal damage. Linewidth measurements indicate a bandwidth of < 0.5 cm−1 for the radiation over the observed tuning range 66–200 μ.

ACCURATE CAPACITANCE CALCULATIONS FOR PN JUNCTIONS CONTAINING TRAPS

E. P. EerNisse

Appl. Phys. Lett. 18, 183 (1971); http://dx.doi.org/10.1063/1.1653617 (4 pages) | Cited 4 times

Online Publication Date: 22 October 2003

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Accurate numerical calculations for the small‐signal response of PN junctions containing deep‐level carrier traps as a function of frequency and reverse‐bias voltage are reported for the first time. Calculations for Au‐doped Si PN abrupt and diffused junctions compare favorably to published experimental results if the room‐temperature emission rates of Tasch and Sah, which leave the Au center only slightly negatively charged in the depletion region, are used. Inclusion of the electric field dependences of the emission rates improves the agreement between experiment and theory. It is demonstrated that ignoring the trapping of carriers which spill over from the more heavily doped side of an asymmetric junction causes some inaccuracies in the use of results from previously published approximate analyses.

SELF‐LOCKING OF MODES IN A HIGH‐PRESSURE CO2 LASER WITH TRANSVERSE PULSE EXCITATION

J. Gilbert and J. L. Lachambre

Appl. Phys. Lett. 18, 187 (1971); http://dx.doi.org/10.1063/1.1653618 (3 pages) | Cited 14 times

Online Publication Date: 22 October 2003

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An investigation has been made of the spontaneous self‐locking of axial modes in a transversely excited atmospheric (TEA) CO2 laser of helical geometry. Laser emission was found to consist of 0.5‐μsec bursts of short periodic pulsations typically 5 nsec in duration with peak powers in the megawatt range. Reproducible pulsating patterns have been achieved with the use of SF6 acting as mode selector in the optical resonator.

SATURABLE ABSORPTION EFFECTS IN A XENON FLASHTUBE DISCHARGE

Robert W. Ward and R. F. Hotz

Appl. Phys. Lett. 18, 189 (1971); http://dx.doi.org/10.1063/1.1653619 (3 pages)

Online Publication Date: 22 October 2003

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Plasma attenuation measurements have been made with YAG: Nd+3 laser radiation traversing a 5‐cm length of xenon plasma in a specially constructed flashtube. For low input signals, significant attentuation was observed with the attentuation persisting for several hundred microseconds following flashtube current cutoff. Experimental plasma transmission data were taken as a function of laser input power density. The results showed that there is a dependence on intensity of input radiation, i.e., the absorption tends to saturate as the laser input intensity increases.

MULTILAYER THIN‐FILM ANALYSIS BY ION BACKSCATTERING

S. T. Picraux and F. L. Vook

Appl. Phys. Lett. 18, 191 (1971); http://dx.doi.org/10.1063/1.1653620 (4 pages) | Cited 13 times

Online Publication Date: 22 October 2003

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Multilayer polycrystalline Er, Sc, or V layers, 500–20 000 Å thick, on Kovar or sapphire substrates were studied using 2‐MeV He+ ion backscattering. Underlying, as well as surface layer, average thicknesses were measured with a sensitivity of 200 Å. In addition, results were obtained on interfacial diffusion, film thickness variations, and the depth distribution of heavy impurities.

UNIFORM ELECTRICAL EXCITATION OF LARGE‐VOLUME HIGH‐PRESSURE NEAR‐SONIC CO2☒N2☒He FLOWSTREAM

Alan E. Hill

Appl. Phys. Lett. 18, 194 (1971); http://dx.doi.org/10.1063/1.1653621 (4 pages) | Cited 31 times

Online Publication Date: 22 October 2003

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Aerodynamic techniques are described whereby continuous electric discharges may be produced uniformly over large volumes in near‐sonic CO2☒N2☒He flowstreams. Experiment shows that discharge input power scales with pressure for the range 30–150 Torr thereby maintaining a fixed specific power load of ≃ 270 kW∕lb(mass)∕sec, while diffuse discharges at 1‐atm pressure have been achieved at much lower specific power levels. Discharges occupying 4.5‐ and 43‐liter volumes with the corresponding flowrates 2700 and 28 000 cfm are each uniform over their entire volumes, indicating that volume‐flowrate scaling is not affected by wall diffusion. Using these discharge techniques, a closed cycle 28 000‐cfm 5.6 × 76 × 100‐cm3 CO2 laser amplifier channel has been designed to produce in excess of 20 kW laser power, continuous. In preliminary experiments small‐signal gains reaching 1.9%∕cm have been measured transversely across both cold and hot extremities of this device.

TRANSIENT CHARACTERISTICS OF SEMICONDUCTING GLASS DIODES

K. Homma

Appl. Phys. Lett. 18, 198 (1971); http://dx.doi.org/10.1063/1.1653622 (3 pages) | Cited 6 times

Online Publication Date: 22 October 2003

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The transient characteristic of a semiconducting glass diode is analyzed on the basis of a model in which a filamentary plasma with high conductivity travels through the diode from one electrode to the other. The switching mechanism is well explained in terms of the travel of this injected plasma. The predicted characteristics of the model exhibit good agreement with experimental results in a Ge2SeTe7 amorphous semiconductor.

PHONON‐INDUCED STRUCTURES IN THE TUNNELING CHARACTERISTICS OF n‐TYPE Si‐OXIDE‐METAL JUNCTIONS

D. C. Tsui and L. N. Dunkleberger

Appl. Phys. Lett. 18, 200 (1971); http://dx.doi.org/10.1063/1.1653623 (3 pages) | Cited 12 times

Online Publication Date: 22 October 2003

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Fine structures in the tunneling characteristics of n‐type Si‐oxide‐metal junctions have been observed at biases approximately equal to the energy of peaks in the Si phonon distribution. We show that these structures cannot arise from phosphorus local‐mode phonons. Instead, they reflect Si phonon peaks and can be attributed to emission of Si phonons by tunneling electrons.

PYROELECTRICITY AND OPTICAL SECOND HARMONIC GENERATION IN POLYVINYLIDENE FLUORIDE FILMS

J. G. Bergman, J. H. McFee, and G. R. Crane

Appl. Phys. Lett. 18, 203 (1971); http://dx.doi.org/10.1063/1.1653624 (3 pages) | Cited 176 times

Online Publication Date: 22 October 2003

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Oriented films of polyvinylidene fluoride [(CH2CF2)n], a polar polymer possessing symmetry mm2, can be made significantly pyroelectric and optically nonlinear by poling in an electric field. A pyroelectric coefficient (dP∕dT = 2.4 ± 0.7 nC∕cm2°C) comparable to that of single‐crystal LiNbO3 is observed. The nonlinear optical coefficients d33, d32, and d31 of polyvinylidene fluoride (PVF2) are measured relative to d11 of crystalline quartz [d33 (PVF2)≃2d31 (PVF2) ≃d11(SiO2); d32(PVF2)≃0]. The poled films have specific advantages for pyroelectric detection of electromagnetic radiation and for optical parametric devices.

ANOMALOUSLY HIGH ``MOBILITY'' IN SEMICONDUCTORS

C. M. Wolfe and G. E. Stillman

Appl. Phys. Lett. 18, 205 (1971); http://dx.doi.org/10.1063/1.1653626 (4 pages) | Cited 14 times

Online Publication Date: 22 October 2003

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In this paper we present a simple model for an inhomogeneous semiconductor which leads to an anomalously high apparent mobility. The model consists of a cylindrically symmetric van der Pauw measurement with a conducting inhomogeneity. This model is analyzed quantitatively and verified experimentally for several measurement configurations. The results cast doubt on the use of a high mobility as an indication of the quality of a semiconductor unless the homogeneity is unambiguously determined or the magnetic field dependence of the Hall constant is carefully examined.
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ERRATA: THERMAL BLOOMING OF A 10.6‐μ LASER BEAM IN Co2

J. R. Kenemuth, C. B. Hogge, and P. V. Avizonis

Appl. Phys. Lett. 18, 208 (1971); http://dx.doi.org/10.1063/1.1653627 (1 page)

Online Publication Date: 22 October 2003

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Abstract Unavailable
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ERRATA: ANALYSIS OF DYE LASER TUNED BY ACOUSTO‐OPTIC FILTER

William Streifer and John R. Whinnery

Appl. Phys. Lett. 18, 208 (1971); http://dx.doi.org/10.1063/1.1653628 (1 page)

Online Publication Date: 22 October 2003

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Abstract Unavailable
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ERRATA: OPTICAL MODULATION OF ELECTRONS

A. R. Hutson

Appl. Phys. Lett. 18, 208 (1971); http://dx.doi.org/10.1063/1.1653629 (1 page)

Online Publication Date: 22 October 2003

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Abstract Unavailable
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ERRATA: EFFICIENT ELECTROLUMINESCENCE FROM InP DIODES GROWN BY LIQUID‐PHASE EPITAXY

G. M. Blom and J. M. Woodall

Appl. Phys. Lett. 18, 208 (1971); http://dx.doi.org/10.1063/1.1653630 (1 page)

Online Publication Date: 22 October 2003

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Abstract Unavailable
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ERRATA: HIGH‐ORDER TRANSVERSE CAVITY MODES IN HETEROJUNCTION DIODE LASERS

J. K. Butler and H. S. Sommers

Appl. Phys. Lett. 18, 208 (1971); http://dx.doi.org/10.1063/1.1653631 (1 page)

Online Publication Date: 22 October 2003

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Abstract Unavailable
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ERRATA: LASER POWER AT 5‐μm FROM THE SUPERSONIC EXPANSION OF CARBON MONOXIDE

Robert L. McKenzie

Appl. Phys. Lett. 18, 208 (1971); http://dx.doi.org/10.1063/1.1653632 (1 page)

Online Publication Date: 22 October 2003

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Abstract Unavailable
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