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15 Nov 1971

Volume 19, Issue 10, pp. 371-447

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Relative Pressure Dependence of Chromel∕Alumel and Platinum∕Platinum− 10% Rhodium Thermocouples

D. Lazarus, R.N. Jeffery, and J.D. Weiss

Appl. Phys. Lett. 19, 371 (1971); http://dx.doi.org/10.1063/1.1653733 (3 pages) | Cited 8 times

Online Publication Date: 22 October 2003

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Measurement made under hydrostatic conditions to 7 kbar of the relative thermal emf's of chromel∕alumel and platinum∕platinum−10% rhodium thermocouples indicates a pressure correction for platinum couples of 0.57 ± 0.03°C∕kbar from about 600 to 1000°C. Chromel∕alumel couples are found to be pressure dependent above about 720°C and to degrade rapidly at temperatures above 800°C. Systematic differences of unknown origin are found between pressure corrections measured with increasing and decreasing pressure.

Modulation of Intervalence Band Transitions Due to Acoustoelectric Domains

K.‐H. Müller and G. Nimtz

Appl. Phys. Lett. 19, 373 (1971); http://dx.doi.org/10.1063/1.1653734 (3 pages) | Cited 3 times

Online Publication Date: 22 October 2003

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It is shown that intervalence band transitions are modulated by acoustoelectric domains. The investigations were carried out in tellurium which has an intervalence band transition at a wavelength of 11 μm. At the same wavelength a modulation of the free‐carrier absorption by acoustoelectric domains was observed as well.

Layering in Sputtered Tantalum Films

Neil Waterhouse

Appl. Phys. Lett. 19, 375 (1971); http://dx.doi.org/10.1063/1.1653735 (4 pages) | Cited 1 time

Online Publication Date: 22 October 2003

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It has been reported in the literature that the electrical properties of some sputtered tantalum films vary with depth in the film and that this might be due to the formation of ``layers'' during deposition. The characteristics of a simple two‐layer model have, therefore, been examined using existing electrical data to determine the functional dependence of the layer resistivity on temperature. The predictions of this model agree quite well with experimental data for a sample exhibiting ``peaked'' resistivity‐vs‐temperature characteristics. Layer thicknesses used in the prediction are compatible with a previously proposed layering mechanism. Attempts to predict the experimental data using a simplified dual conduction mechanism were unsuccessful when equation constants close to physically measured values were used. Possible reasons for this disagreement are discussed.

The Use of Relativistic Energies to Overcome Energy‐Resolution Difficulties in the Schwarz‐Hora Experiment

L. D. Favro, D. M. Fradkin, P. K. Kuo, and William B. Rolnick

Appl. Phys. Lett. 19, 378 (1971); http://dx.doi.org/10.1063/1.1653736 (3 pages) | Cited 4 times

Online Publication Date: 22 October 2003

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The relativistic expression for the spatial damping of the Schwarz‐Hora radiation is given and is compared with the latest data of Schwarz. The agreement is good and indicates that the energy resolution of the electron beam of his apparatus can be as small as 0.0055 eV. It is suggested that experiments be performed using higher kinetic energy for the electron beam where the need for small energy resolution is obviated.

High‐Resolution‐Laser Atmospheric‐Transmission‐Measurement Method

Kenneth O. White, Stuart A. Schleusener, E. Howard Holt, and Robert F. Calfee

Appl. Phys. Lett. 19, 381 (1971); http://dx.doi.org/10.1063/1.1653737 (2 pages) | Cited 5 times

Online Publication Date: 22 October 2003

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A new method of measuring the wavelength dependence of the absorption losses in atmospheric gases of solid‐state laser radiation is described. The method depends upon the use of a wavelength selecting gate to identify laser spikes within a narrow wavelength range and the use of such spikes for the compilation of transmission data. Experimental results of erbiumlaser propagation losses in CO2 with a spectral resolution of 0.015 nm are compared with a theoretical calculation.

Heterojunction Photocathode Concepts

A. G. Milnes and D. L. Feucht

Appl. Phys. Lett. 19, 383 (1971); http://dx.doi.org/10.1063/1.1653739 (3 pages) | Cited 8 times

Online Publication Date: 22 October 2003

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A three‐layer voltage‐biased heterojunction structure pGe∕vZnSe∕p+GaAs(Cs) should allow emission from the GaAs of electrons originally photoinduced in the Ge conduction band. Conceptually this is a possible approach to the development of a high‐yield photocathode with low (0.7 eV) threshold energy.

Proposed Third‐Harmonic Generation in Phase‐Matched Metal Vapors

S. E. Harris and R. B. Miles

Appl. Phys. Lett. 19, 385 (1971); http://dx.doi.org/10.1063/1.1653740 (3 pages) | Cited 35 times

Online Publication Date: 22 October 2003

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This letter considers the use of alkali metal vapors, phase matched with inert buffer gases for generation of third‐harmonic radiation. For example, calculations show that 1.8 MW will be required for 50% conversion of 1.06‐μ radiation to 0.35‐μ radiation using a 1:412 part mixture of rubidium and xenon. Generation to frequencies above the ionization potential of the metal vapors is considered.

High‐Resolution Measurements of Electron Energy Distribution Peak Shifts

J. C. Tracy and J. E. Rowe

Appl. Phys. Lett. 19, 388 (1971); http://dx.doi.org/10.1063/1.1653741 (2 pages) | Cited 2 times

Online Publication Date: 22 October 2003

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A method to measure peak shifts in electron energy distributions to resolutions several orders of magnitude smaller than the peak widths is described. It is a continuous measurement applicable to any analyzer capable of using the ac method of derivative detection. Its application to the temperature dependence of the position of the ``d‐band'' peak in uv photoemission from Ni shows that it is capable of detecting 1‐meV peak shifts in this case.

Doped Triglycine Sulfate for Pyroelectric Applications

P. J. Lock

Appl. Phys. Lett. 19, 390 (1971); http://dx.doi.org/10.1063/1.1653742 (2 pages) | Cited 97 times

Online Publication Date: 22 October 2003

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Crystals of triglycine sulfate (TGS) grown from solutions containing alanine are found to give biased ferroelectric hysteresis loops. The material is therefore always in a fully poled state when below its Curie point in the absence of large external fields. The values of ϵ′ and ϵ″ are lower than for pure TGS. Pyroelectric infrared detectors using this material approach within an order of magnitude of the limit of sensitivity for uncooled thermal detectors.

Deformation of Nematic Liquid Crystals with Vertical Orientation in Electrical Fields

M. F. Schiekel and K. Fahrenschon

Appl. Phys. Lett. 19, 391 (1971); http://dx.doi.org/10.1063/1.1653743 (3 pages) | Cited 149 times

Online Publication Date: 22 October 2003

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A new electro‐optical effect in nematic liquid crystals with negative dielectric anisotropy is described, using sandwich cells with molecular orientation perpendicular to the electrode surface (homeotropic alignment). In an arrangement between crossed polarizers, high‐contrast ratios have been achieved with low voltages. This effect shows a high degree of non‐linearity and thus permits the development of matrix displays without using additional non‐linear elements.

Red Photoluminescent Efficiency and Minority‐Carrier Lifetime of GaP(Zn,O) Pulled from Nonstoichiometric Melts

A. S. Jordan, A. R. Von Neida, R. Caruso, and M. DiDomenico

Appl. Phys. Lett. 19, 394 (1971); http://dx.doi.org/10.1063/1.1653744 (4 pages) | Cited 10 times

Online Publication Date: 22 October 2003

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GaP (Zn, O) crystals pulled from nonstoichiometric melts by the liquid‐encapsulation Czochralski (LEC) technique bridge the gap between the red photoluminescent quantum efficiencies of platelets grown from solution and crystals pulled by LEC from a stoichiometric melt. A linear correlation is shown to exist between the nonradiative shunt‐path component of the total reciprocal minority‐carrier lifetime and the Ga‐vacancy concentration of these different crystals.

Susceptibility Echos in Linear Molecular Gases

C. H. Lin, J. P. Heritage, and T. K. Gustafson

Appl. Phys. Lett. 19, 397 (1971); http://dx.doi.org/10.1063/1.1653745 (4 pages) | Cited 23 times

Online Publication Date: 22 October 2003

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The response of a gas composed of linear molecules to a short optical pulse is considered. The evolution of susceptibility echos occurring at intervals of 1∕4B, where B is the rotational constant of the molecule, is predicted.

Tunable Spin‐Flip Raman Laser at Magnetic Field as Low as 400 G

C. K. N. Patel

Appl. Phys. Lett. 19, 400 (1971); http://dx.doi.org/10.1063/1.1653746 (4 pages) | Cited 16 times

Online Publication Date: 22 October 2003

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We report the first operation of a tunable cw spin‐flip Raman laser at magnetic fields as low as 400 G. We also report the first observation of a tunable cw anti‐Stokes spin‐flip Raman (SFR) laser. These results should allow the SFR lasers to be operated with small electromagnets rather than the superconducting solenoids used heretofore.

Current Transport, Effective Dielectric Constant, and Temperature of Ta2 O5 Thin Films

George D. O'Clock

Appl. Phys. Lett. 19, 403 (1971); http://dx.doi.org/10.1063/1.1653747 (3 pages) | Cited 12 times

Online Publication Date: 22 October 2003

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The I‐V characteristics of Ta☒Ta2O5☒Au thin‐film devices indicate high temperatures and large dielectric constants for both Schottky and Poole‐Frenkel dominated conduction. The effects of space charge and electron effective mass are also indicated.

Gas‐Breakdown Dependence on Beam Size and Pulse Duration with 10.6‐μ Wavelength Radiation

David C. Smith

Appl. Phys. Lett. 19, 405 (1971); http://dx.doi.org/10.1063/1.1653748 (4 pages) | Cited 52 times

Online Publication Date: 22 October 2003

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Gas‐breakdown threshold measurements with 10.6‐μ wavelength radiation have been made in air, argon, and helium. The threshold was determined with 50‐ and 200‐nsec‐duration pulses and was found to depend on the peak intensity of the pulse, showing that the breakdown process is a balance between the rate of energy absorption and some rate of energy loss. The threshold also decreased as the focal spot size was increased from 10−2 to 10−1 cm, showing that the loss process is reduced for larger beam sizes. The threshold varied inversely with gas pressure from 0.1 to 4 atm, which is evidence that the loss mechanism is not electron diffusion but must be some other process which exhibits a beam‐size dependence and is apparently weakly dependent on gas pressure.

Amphoterically Silicon‐Doped Gallium Arsenide Laser

B. H. Ahn, C. W. Trussell, and R. R. Shurtz

Appl. Phys. Lett. 19, 408 (1971); http://dx.doi.org/10.1063/1.1653749 (3 pages) | Cited 2 times

Online Publication Date: 22 October 2003

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A successful attempt has been made in fabricating an amphoterically silicon‐doped gallium arsenide laser which operates at room temperature. Silicon doped n and p layers were grown in one step using the liquid phase epitaxy method. The threshold current densities were 3400 and 58 700 A∕cm2 at 77 and 300 °K, respectively. The best beam divergence observed was 11 ° at the half‐power point. The heavily compensated p layer and long electron‐diffusion length were overcome by use of a potential barrier.

Time‐Resolved Spectroscopy of a Flash‐Initiated H2☒F2 Laser

S. N. Suchard, R. W. F. Gross, and J. S. Whittier

Appl. Phys. Lett. 19, 411 (1971); http://dx.doi.org/10.1063/1.1653750 (3 pages) | Cited 13 times

Online Publication Date: 22 October 2003

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The time‐dependent output spectrum of a helium‐diluted H2☒F2 chain‐reaction chemical laser has been observed. Reaction of a 50‐Torr mixture with mole ratio H2 : F2 : He = 1 : 1 : 60 was initiated by flash photolysis of the F2. Strong lasing was found from P‐branch vibration‐rotation transitions of the v = 1 → 0, 2 → 1, 3 → 2, and 4 → 3 bands of HF. Within some bands, the time sequence of transitions suggests non‐Boltzmann distributions of rotational states. No lasing from vibrational levels higher than 4 could be detected.

Bistable Electrical Switching in Polymer Thin Films

H. Carchano, R. Lacoste, and Y. Segui

Appl. Phys. Lett. 19, 414 (1971); http://dx.doi.org/10.1063/1.1653751 (2 pages) | Cited 60 times

Online Publication Date: 22 October 2003

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Reproducible bistable switching has been observed in Au‐Polymer‐Au junctions. The polymer is formed by a glow‐discharge polymerization technique. The resistance ratio is more than 107 and structures can be switched more than 2000 times. When the polymer thickness is lower than 1500 Å, the threshold voltage increases linearly with the polymer thickness. A scanning electron microscope picture of a junction that has been switched shows circular dots, ranging between 5‐ and 10‐ μm diameter, on the surface. These dots are probably due to current‐carrying filaments.

Optical Filament Formation in Nitrobenzene Resulting from Laser Intensity Inhomogeneities

Satish C. Abbi and Herbert Mahr

Appl. Phys. Lett. 19, 415 (1971); http://dx.doi.org/10.1063/1.1653753 (3 pages) | Cited 7 times

Online Publication Date: 22 October 2003

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An experiment was performed in nitrobenzene with a multimode ruby laser to study filament formation as a function of beam aperture size. A theory which assumes that optimum‐size intensity spikes of the incident‐laser‐beam self‐focus first can explain the experimental results with one adjustable parameter.

Thermal Effects in Amorphous‐Semiconductor Switching

Theodore Kaplan and David Adler

Appl. Phys. Lett. 19, 418 (1971); http://dx.doi.org/10.1063/1.1653754 (3 pages) | Cited 19 times

Online Publication Date: 22 October 2003

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It is shown that a pure thermal model, in the absence of significant heating of the electrodes, gives no negative differential resistance and no high‐current filaments. When some electronic effects, such as space charge, narrow Schottky barriers, or field‐enhanced conductivity, are explicitly introduced, negative‐resistance regions and filamentary conduction exists.

Temporal and Spectral Development of Mode Locking in a Ring‐Cavity Nd:Glass Laser

R. C. Eckardt, C. H. Lee, and J. N. Bradford

Appl. Phys. Lett. 19, 420 (1971); http://dx.doi.org/10.1063/1.1653755 (4 pages) | Cited 10 times

Online Publication Date: 22 October 2003

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Temporal and spectral development of mode locking was investigated in a ring‐cavity Nd : glass laser. It was found that whenever a mode‐locked pulse formed in the ring cavity a satellite pulse would develop traveling in the opposite direction. The varying delay of the satellite pulse permitted time‐resolved spectroscopy of the early stages of mode‐locked oscillation. It was found that the spectral distribution broadens from 3 to 80 Å because of selfphase modulation inside the laser cavity.

The Current Dependence of the Intensity of Spontaneous Emission of GaAs Injection Lasers to Full Operating Power

H. S. Sommers

Appl. Phys. Lett. 19, 424 (1971); http://dx.doi.org/10.1063/1.1653756 (3 pages) | Cited 17 times

Online Publication Date: 22 October 2003

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The current dependence of the intensity of the spontaneous emission from GaAs injection lasers operated at 300 °K to five times threshold is reported. The long‐wavelength emission saturates before threshold, while the spontaneous intensity for wavelengths shorter than the lasing emission grows smoothly with no indication of the transit of threshold. At five times threshold the intensity is 2.4 times the threshold value and still growing. Similar behavior was observed with double‐heterojunction lasers exhibiting five stripes parallel to the junction in the near field, and with single‐heterojunction lasers with a single stripe. It is argued that the behavior of the spontaneous emission is in fundamental disagreement with the linear theory of lasing and that its explanation will require introduction into the rate equations of a strong nonlinearity which controls the lasing region.

Nonlinear Oscillations in n‐InSb

Toshimitsu Musha, Yasuaki Teramachi, and Masahiro Agu

Appl. Phys. Lett. 19, 426 (1971); http://dx.doi.org/10.1063/1.1653757 (3 pages)

Online Publication Date: 22 October 2003

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Comb‐shaped oscillations in a frequency domain were observed as a result of nonlinear interactions between helical instabilities and low‐frequency oscillations. The comb‐shaped oscillations were mode locked when the external signal was applied at one of the comb‐teeth frequencies but quenched when the external signal was off the teeth.

Optical Guided Wave Mode Conversion by an Acoustic Surface Wave

L. Kuhn, P. F. Heidrich, and E. G. Lean

Appl. Phys. Lett. 19, 428 (1971); http://dx.doi.org/10.1063/1.1653758 (3 pages) | Cited 21 times

Online Publication Date: 22 October 2003

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The experimental observation of efficient (55%) mode conversion of thin‐film optical guided waves by a collinear interaction with a surface acoustic wave is reported. The effects of waveguide dispersion and finite geometry are discussed.

Long‐Wavelength Photoemission from InAs1−xPx

H. Sonnenberg

Appl. Phys. Lett. 19, 431 (1971); http://dx.doi.org/10.1063/1.1653759 (3 pages) | Cited 14 times

Online Publication Date: 22 October 2003

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Efficient photoemission from InAs1−xPx (Cs☒O) with a band‐gap‐limited threshold at 1.4 μ was observed. Indirect measurements of the composition and thickness of the Cs☒O low‐work‐function surface suggest that the surface consists of about one monolayer of Cs, followed by approximately one monolayer of cesium oxide. These data make an interpretation of the low‐work‐function properties of Cs☒O in terms of the heterojunction model (based on the bulk properties of Cs2O) questionable.
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