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1 Dec 1971

Volume 19, Issue 11, pp. 451-498


Dye‐Sensitized High‐Efficiency Thick Dielectric Diffraction Gratings

V. Files

Appl. Phys. Lett. 19, 451 (1971); http://dx.doi.org/10.1063/1.1653766 (2 pages) | Cited 1 time

Online Publication Date: 22 October 2003

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Commercially available optical cements have been sensitized and exposed throughout the visible spectrum to produce volume holograms with diffraction efficiencies greater than 98% at the Bragg angle. The basic imaging mechanism is a dye‐sensitized photo‐induced refractive‐index change on the order of 5×10−3. Upon exposure to actinic radiation, and in the presence of an organic peroxide, the sensitizer absorption and energy transfer result in image formation and bleaching of the dye to nonabsorbing (leuco) state.

Raman Scattering Cross Section for N2O4

Che Jen Chen and Frank Wu

Appl. Phys. Lett. 19, 452 (1971); http://dx.doi.org/10.1063/1.1653767 (2 pages) | Cited 3 times

Online Publication Date: 22 October 2003

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The Raman scattering cross section for N2O4 at a Raman shift of 1360 cm−1 is measured by using a Q‐switched ruby laser as an excitation source. The cross section for N2 at a Raman shift of 2330 cm−1 has also been measured and is compared with a previous measurement.

Holographic Storage in VO2

W. R. Roach

Appl. Phys. Lett. 19, 453 (1971); http://dx.doi.org/10.1063/1.1653769 (3 pages) | Cited 33 times

Online Publication Date: 22 October 2003

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Permanent erasable holographic storage has been demonstrated in a VO2 film by utilizing a change in an optical property which has a broad hysteresis at the insulator‐to‐metal phase transition. The implied coexistence of insulating and metallic phases at a single temperature indicates that a barrier exists which inhibits movement of the phase boundary.

Wavefront Distortion of Acoustic Surface Waves from Apodized Interdigital Transducers

R. H. Tancrell and R. C. Williamson

Appl. Phys. Lett. 19, 456 (1971); http://dx.doi.org/10.1063/1.1653770 (4 pages) | Cited 5 times

Online Publication Date: 22 October 2003

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The acoustic surface wave launched by an interdigital transducer is experimentally shown to have a distorted wavefront when the transducer has a varying finger overlap (apodization) and is on a high‐coupling piezoelectric substrate, LiNbO3. Results are shown for different transducer geometries, when an acoustic wave passes under the comb and when the apodized comb itself is driven. One geometry having extra metal fingers significantly reduces the wavefront distortion. The origin of the distortion is a retardation of the wave passing under metal fingers.

Thermally Restorable Optical Degradation Effects in Heat‐Treated Cu2S☒CdS Crystal Heterojunctions

Stefan K. Kanev, Alan L. Fahrenbruch, and Richard H. Bube

Appl. Phys. Lett. 19, 459 (1971); http://dx.doi.org/10.1063/1.1653771 (3 pages) | Cited 3 times

Online Publication Date: 22 October 2003

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We have shown that heat treatment alone does not produce appreciable degradation of the short‐circuit current in Cu2S☒CdS single‐crystal photovoltaic heterojunctions. The degradation, which has been commonly observed, is the result of optically induced effects in the heat‐treated cell, subsequent to the heat treatment. These optically induced effects can be correlated with photochemical changes induced in single crystals of CdS: Cd: Cu in which the density of Cu acceptors exceeds the density of excess‐Cd donors. Major conclusions about the mechanism of the photovoltaic effect and heat‐treatment processes can be drawn.

Behavior of High‐Purity Germanium Nuclear Counters at Low Temperature

R. Stuck, J. P. Ponpon, P. Siffert, and C. Ricaud

Appl. Phys. Lett. 19, 461 (1971); http://dx.doi.org/10.1063/1.1653772 (4 pages) | Cited 1 time

Online Publication Date: 22 October 2003

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γ‐ray spectrometers prepared from high‐purity germanium have been operated at low temperatures down to 5°K. The energy resolution of completely depleted detectors was the same at 5°K as at 77°K and no trapping‐detrapping phenomena were observed. However, at sufficiently low bias voltage, slow components appeared on the pulses below 8°K. This effect is shown to be related to the increase in the resistivity of the undepleted region.

Growth‐Induced Noncubic Anisotropy Arising from the Tetrahedral Sites in Garnets

Aline Akselrad and Herbert Callen

Appl. Phys. Lett. 19, 464 (1971); http://dx.doi.org/10.1063/1.1653773 (3 pages) | Cited 18 times

Online Publication Date: 22 October 2003

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We have observed noncubic growth‐induced anisotropy in garnets prepared to preclude the mechanism based on rare‐earth ions, such as Eu3Fe5−xGaxO12 with a single rare‐earth ion, or such as Y3−2xCa2xVxFe5−x O12 with only diamagnetic ions on the dodecahedral sites; all samples contain a mixture of constituents on tetrahedral sites. We show that the noncubic anisotropy can be explained by distortion of the local symmetry around tetrahedral ions caused by preferential site ordering among their tetrahedral neighbors. A similar distortion of tetrahedral symmetry by ordering of dodecahedral ions should contribute in mixed rare‐earth garnets.

New Method for Breakdown Voltage Determination in p‐n Junctions

W. G. Oldham, P. Antognetti, and R. R. Samuelson

Appl. Phys. Lett. 19, 466 (1971); http://dx.doi.org/10.1063/1.1653774 (2 pages) | Cited 3 times

Online Publication Date: 22 October 2003

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The triggering behavior of small‐area uniform avalanche diodes may be used to measure the breakdown voltage. The diode is biased at sufficiently high reverse voltage that pulses of current appear and the relative probability of a generated electron or hole triggering an avalanche is determined by measuring the pulse rate. Performing the measurements over a range of bias and extrapolating the pulse rate to zero yield the breakdown voltage to within a few millivolts.

Growth of Periodic Structures by the Molecular‐Beam Method

A. Y. Cho

Appl. Phys. Lett. 19, 467 (1971); http://dx.doi.org/10.1063/1.1653775 (2 pages) | Cited 51 times

Online Publication Date: 22 October 2003

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Molecular‐beam epitaxy has been used successfully for the attainment of single‐crystal multiple‐layer structures with alternating types of conductivities (p∕n) or band‐gap energies (GaAs∕AlxGa1−xAs). Deposition by the molecular‐beam method offers the possibility of growing periodic‐structure layers with constant chemical composition profiles and controlled uniform thicknesses.

Josephson‐Junction Amplifier

John Clarke and James L. Paterson

Appl. Phys. Lett. 19, 469 (1971); http://dx.doi.org/10.1063/1.1653776 (3 pages) | Cited 25 times

Online Publication Date: 22 October 2003

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Positive feedback has been used within a double‐Josephson‐junction quantum interferometer to achieve a current amplification which can be adjusted from outside the cryostat over the range 1–100. The interferometer may be regarded as a three‐terminal amplifying device.

Direct‐Current Electroluminescence in Rare‐Earth‐Activated Zinc Sulphide Powder Layers

M. S. Waite and A. Vecht

Appl. Phys. Lett. 19, 471 (1971); http://dx.doi.org/10.1063/1.1653777 (3 pages) | Cited 13 times

Online Publication Date: 22 October 2003

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Narrow‐band luminescence from rare‐earth centers in zinc sulphide powders has been observed with medium‐voltage direct‐current excitation for five rare‐earth‐doped zinc sulphide phosphors. The brightness and powder efficiencies have been measured and the electroluminescent spectra obtained show differences from the photoluminescent spectra.

Detonation of Insensitive High Explosives by a Q‐Switched Ruby Laser

L. C. Yang and Vincent J. Menichelli

Appl. Phys. Lett. 19, 473 (1971); http://dx.doi.org/10.1063/1.1653778 (3 pages) | Cited 26 times

Online Publication Date: 22 October 2003

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Immediate longitudinal detonations have been observed in confined small‐diameter columns of PETN, RDX, and tetryl by using a focused Q‐switched ruby laser. The energy ranged from 0.8 to 4.0 J in a pulse width of 25 nsec. A 1000‐Å‐thick aluminum film deposited on a glass window was used to generate a shock wave at the window‐explosive interface when irradiated by the laser. In some cases steady‐state detonations were reached in less than ☒ μsec with less than 10% variation in the detonation velocity.

Electromigration in Al Films Containing Si

G. J. van Gurp

Appl. Phys. Lett. 19, 476 (1971); http://dx.doi.org/10.1063/1.1653779 (3 pages) | Cited 10 times

Online Publication Date: 22 October 2003

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Electromigration‐induced failure in Al films is retarded by the addition of Si. It is then governed by surface diffusion instead of by grain‐boundary diffusion as it is in pure Al films. This is evidenced by activation energies, which were found to be 0.3 eV in Al∕Si films and 0.55 eV in Al films. Failure in the Al∕Si films is due to void formation in a temperature gradient near the cathode, whereas in Al films the failure mode is void formation at structural inhomogeneities.

Control of Positive Surface Charge in Si☒SiO2 Interfaces by Use of Implanted Cs Ions

G. Sixt and A. Goetzberger

Appl. Phys. Lett. 19, 478 (1971); http://dx.doi.org/10.1063/1.1653780 (2 pages) | Cited 19 times

Online Publication Date: 22 October 2003

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Cs is shown to give positive surface charge, which has great stability against temperature‐bias stressing. Cs ions are first introduced into Si surfaces by ion implantation, then the surface layer is converted into SiO2 by thermal oxidation. Surface charge can be well localized by masking. Its magnitude depends on the number of implanted ions, on oxidation time, and temperature.

Frequency‐Tunable Transform‐Limited Picosecond Dye‐Laser Pulses

E. G. Arthurs, D. J. Bradley, and A. G. Roddie

Appl. Phys. Lett. 19, 480 (1971); http://dx.doi.org/10.1063/1.1653781 (3 pages) | Cited 19 times

Online Publication Date: 22 October 2003

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Picosecond pulses of transform‐limited durations (Δt∼3 psec; ΔtΔν∼0.5) have been obtained from a passively mode‐locked Rhodamine 6G dye laser, frequency tuned over a range of 230 Å with an intracavity Fabry‐Perot filter. Self‐phase‐modulation frequency broadening at higher powers has also been measured giving a value n2 = 10−18 cm2V−2 for the nonlinear refractive index of the ethanol dye solvent.

Infrared Holography with Wax and Gelatin Film

Shigeaki Kobayashi and Kyoko Kurihara

Appl. Phys. Lett. 19, 482 (1971); http://dx.doi.org/10.1063/1.1653782 (3 pages) | Cited 15 times

Online Publication Date: 22 October 2003

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Holograms are made by CO2 laser (10.6 μm) utilizing the thermal deformation of wax and gelatin film. Reconstructed images of holograms are obtained in real time by 6328‐Å He☒Ne laser. These materials are found to be useful recording media for ir holography.

Laser‐Induced Liquid Breakdown‐a Step‐By‐Step Account

M. P. Felix and A. T. Ellis

Appl. Phys. Lett. 19, 484 (1971); http://dx.doi.org/10.1063/1.1653783 (3 pages) | Cited 40 times

Online Publication Date: 22 October 2003

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The commonly observed phenomenon of breakdown in a liquid irradiated by a focused highpower laser is shown, by means of short‐duration photography, to consist of a definite sequence of events starting with dielectric breakdown and rapidly expanding cavities in the focal region, followed by shock‐wave propagation, cavity deceleration, localized cavitation, and eventual bubble collapse. This complete sequence has heretofore been obscured due to either time‐exposure photography or lack of adequate time delay prior to taking photographs. This photographic sequence should settle the controversy over the origin of the many bubbles observed near the focal region of a liquid irradiated by a high‐power pulsed laser.

Growth of High‐Quality Garnet Thin Films from Supercooled Melts

H. J. Levinstein, S. Licht, R. W. Landorf, and S. L. Blank

Appl. Phys. Lett. 19, 486 (1971); http://dx.doi.org/10.1063/1.1653784 (3 pages) | Cited 104 times

Online Publication Date: 22 October 2003

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A new dipping technique is described for producing uniform‐thickness low‐defect‐density magnetic garnet films suitable for bubble‐domain devices. The technique is based on the observation that melts having the appropriate flux and garnet composition can be supercooled over a large temperature range and will remain supercooled, permitting the growth at constant temperature of epitaxial magnetic garnet films.

Supercurrent Tunneling Junctions with Tellurium Barriers

John Seto and Theodore Van Duzer

Appl. Phys. Lett. 19, 488 (1971); http://dx.doi.org/10.1063/1.1653785 (4 pages) | Cited 17 times

Online Publication Date: 22 October 2003

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Uniformly distributed supercurrents have been observed in Josephson‐like junctions using tellurium barriers with thicknesses up to 800 Å. Dependences of the maximum zero‐voltage current on temperature and thicknesses are different from those of the normal‐metal and oxide‐barrier junctions. Typical junction resistances are comparable with those of oxide‐barrier junctions.

Absolute Gain Measurements in a Multistage Dye Amplifier

P. Flamant and Y. H. Meyer

Appl. Phys. Lett. 19, 491 (1971); http://dx.doi.org/10.1063/1.1653786 (3 pages) | Cited 8 times

Online Publication Date: 22 October 2003

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A six‐stage flash‐pumped dye amplifier using a rhodamine 6G solution is used for gain measurements. Amplification gains of up to 700 are obtained. Comparison of apparent amplification gains and absolute energy gains are made for different wavelengths emitted by a tunable dye oscillator. The possibility of achieving an effective energy gain of one order of magnitude by the use of a flash‐pumped amplifier is demonstrated for wide beams.

Diffusion of Silicon into Tungsten in Field‐Emission Microscope

M. K. Sinha and Orven F. Swenson

Appl. Phys. Lett. 19, 493 (1971); http://dx.doi.org/10.1063/1.1653787 (2 pages) | Cited 4 times

Online Publication Date: 22 October 2003

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We report that when silicon is evaporated onto a tungsten field emitter at room temperature and the tip is then annealed at higher temperatures in order to carry out surface migration and thermal desorption studies, part of the silicon diffuses into the interior. When the tip is flashed at 2500 °K to produce a clean surface, all the silicon is not removed and it can be brought out again by annealing between 1000 and 1500 °K. This is demonstrated by a silicon buildup on the surface with an activation energy of 9.3 ± 0.5 kcal∕mole. The rate of buildup is enhanced by the application of high voltage.

Optical Dielectric Strength of Alkali‐Halide Crystals Obtained by Laser‐Induced Breakdown

Eli Yablonovitch

Appl. Phys. Lett. 19, 495 (1971); http://dx.doi.org/10.1063/1.1653788 (3 pages) | Cited 37 times

Online Publication Date: 22 October 2003

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CO2 laser‐induced breakdown was studied in ten of the alkali halides. The bulk intrinsic breakdown thresholds are intimately related to the corresponding dc dielectric strengths. It is therefore concluded that the same mechanism is operative in both types of experiment. A method is proposed for designing more damage‐resistant materials. In addition, the question of inclusions is dealt with.

pn‐Schottky Hybrid Cold‐Cathode Diode

C. A. Stolte and R. J. Archer

Appl. Phys. Lett. 19, 497 (1971); http://dx.doi.org/10.1063/1.1653789 (2 pages) | Cited 6 times

Online Publication Date: 22 October 2003

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The device is a forward‐biased GaAs0.6P0.4 pn‐junction diode whose thin p layer is coated with a cesiated film of either Ag or Au 100–300 Å thick. In some cases the diodes are heat treated at 250 °C before cesiation. A cathodic emission efficiency of 1.4% is obtained at 10 A cm−2 for a heat‐treated diode with a 100‐Å‐thick Au film. The emission is uniform over the coated surface and is proportional to exp(qV∕kT). Preliminary data indicate long life for the device when operated in an ambient of Cs vapor.
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