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15 Jul 1971

Volume 19, Issue 2, pp. 23-47


Ultrashort Pulse Formation in a Short‐Pulse‐Stimulated Raman Oscillator

M. J. Colles

Appl. Phys. Lett. 19, 23 (1971); http://dx.doi.org/10.1063/1.1653806 (3 pages) | Cited 14 times

Online Publication Date: 22 October 2003

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A train of picosecond pulses was used to pump a stimulated Raman oscillator designed such that the generated Stokes pulse was amplified by successive pump pulses. In this way partial group velocity matching could be achieved and significant time narrowing of the Stokes pulse realized. With benzene as the Raman active material, a minimum Stokes‐pulse duration of ≃ 0.3 psec was recorded.

Double Heterojunction AlGaAsP Quaternary Lasers

R. D. Burnham, N. Holonyak, H. W. Korb, H. M. Macksey, D. R. Scifres, J. B. Woodhouse, and Zh. I. Alfërov

Appl. Phys. Lett. 19, 25 (1971); http://dx.doi.org/10.1063/1.1653807 (4 pages) | Cited 9 times

Online Publication Date: 22 October 2003

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Stimulated emission in AlGaAsP is demonstrated. Double heterojunction AlGaAsP lasers grown from Ga solution on GaAsP substrates exhibit 300 °K thresholds as low as 104 A∕cm2 (∼ 8450 Å) and shift ∼ 450 Å to shorter wavelength at 77 °K. In spite of its more complicated crystalline structure, solution‐grown AlGaAsP appears to exceed in quality vapor‐grown GaAsP.

Spatial Variation of Radiative Recombination in GaAsP Wafer Revealed by Photoluminescence Image

J. F. Black, C. J. Summers, and B. Sherman

Appl. Phys. Lett. 19, 28 (1971); http://dx.doi.org/10.1063/1.1653809 (3 pages) | Cited 3 times

Online Publication Date: 22 October 2003

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A scanned laser microscope has been used to investigate the uniformity of luminescence in GaAs0.62P0.38 wafers. Large variations in the external quantum efficiency were observed. These variations are related to topographical features in the wafer surface that are associated with misfit‐dislocation‐line structures.

Superior Aluminum for Interconnections of Integrated Circuits

H. J. Bhatt

Appl. Phys. Lett. 19, 30 (1971); http://dx.doi.org/10.1063/1.1653810 (4 pages) | Cited 7 times

Online Publication Date: 22 October 2003

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The electromigration strength of aluminum can be increased at least by more than ten times by the addition of aluminum oxide. Improvements in hillock formation, superior corrosion resistance, electrical resistivity similar to standard aluminum, and higher permissible annealing temperatures make aluminum‐aluminum oxide alloy more attractive than standard aluminum for both bipolar and field‐effect‐transistor semiconductor technologies using single as well as multilevel metallization.

Investigation of the Composition of Sputtered Silicone Nitride Films by Nuclear Microanalysis

M. Croset, S. Rigo, and G. Amsel

Appl. Phys. Lett. 19, 33 (1971); http://dx.doi.org/10.1063/1.1653811 (3 pages) | Cited 4 times

Online Publication Date: 22 October 2003

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The composition and uniformity of silicon nitride thin films deposited by reactive sputtering in a mixture of argon and nitrogen eventually contaminated by oxygen traces were studied. Both direct observation of nuclear reactions on nitrogen and oxygen and backscattering of 4He+ ions were used to analyze the deposits. The films appear uniform as a function of depth. They are practically oxygen free but contain large amounts of argon. Their stoichiometry changes with the partial pressure PN2 of nitrogen. The ratios N∕Si and Ar∕Si vary in the opposite direction; for smaller values of PN2 there is an excess of silicon, whereas for larger values an excess of nitrogen is observed with respect to the stoichiometric composition Si3N4.

Extending the Tuning Range of Tunable Oscillators by Upconversion

A. J. Campillo and C. L. Tang

Appl. Phys. Lett. 19, 36 (1971); http://dx.doi.org/10.1063/1.1653812 (3 pages) | Cited 7 times

Online Publication Date: 22 October 2003

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The operation of a doubly resonant LiIO3 parametric oscillator is described. Simultaneous pumping of this oscillator and a LiIO3 upconverter by a single ruby‐laser beam was employed to extend the tuning range of the parametric oscillator down to the 4200–5100‐Å range. Up to 10 kW of upconverted power with a 1‐MW ruby‐laser pump was observed; with an intracavity upconverter, a substantial increase in the over‐all efficiency should be achievable.

A Thin‐Film Ring Laser

H. P. Weber and R. Ulrich

Appl. Phys. Lett. 19, 38 (1971); http://dx.doi.org/10.1063/1.1653813 (3 pages) | Cited 37 times

Online Publication Date: 22 October 2003

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We report the operation and characteristics of a ring laser formed by a single‐mode light‐guiding thin film. The rhodamine 6G doped polyurethane film is coated on the surface of a cylindrical glass rod. This geometry establishes feedback for laser oscillation around the circumference of the rod. A nitrogen laser serves as pump source.

Emission Spectra in CdS under High Excitation by Electron Beam

Sohachi Iwai and Susumu Namba

Appl. Phys. Lett. 19, 41 (1971); http://dx.doi.org/10.1063/1.1653814 (3 pages) | Cited 16 times

Online Publication Date: 22 October 2003

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An additional peak in CdS was observed on the long‐wavelength side of the Ex‐LO band in the spontaneous emission spectra under high excitation by an electron beam from 82 to 300 °K. The shift of the additional peak from the free‐exciton line increased linearly with temperature. The laser emission occurred near the additional peak. The laser‐transition mechanism associated with the additional luminescence is discussed.

Electrical Properties of Silicon Diode Array Camera Targets Made by Boron Ion Implantation

K. A. Pickar, J. V. Dalton, H. D. Seidel, and J. R. Mathews

Appl. Phys. Lett. 19, 43 (1971); http://dx.doi.org/10.1063/1.1653815 (2 pages) | Cited 1 time

Online Publication Date: 22 October 2003

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Silicon diode targets used as the image‐sensing element of video camera tubes have been successfully fabricated with one photolithographic step using boron ion implantation to form the array of ∼ 800 000 p+n diodes. Targets have been made reproducibly in this way with total leakage currents ≲10 nA at 12‐V bias and 0–2 low‐intensity white video defects per target. The results, which are insensitive to changes in dose and energy, show that heavily boron‐implanted oxides can be annealed to give low‐surface recombination velocity (S0 ∼ 7 cm∕sec) and fixed charge (Qss∕q ≃ 2.0 × 1011 cm−2). In addition, the bulk effective lifetime in the space‐charge region of the implanted diodes is measured to be τ > 200 μsec.

Infrared‐Pumped Visible Laser

L. F. Johnson and H. J. Guggenheim

Appl. Phys. Lett. 19, 44 (1971); http://dx.doi.org/10.1063/1.1653816 (4 pages) | Cited 126 times

Online Publication Date: 22 October 2003

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Infrared‐pumped stimulated emission near 6700 Å in BaY2F8 : Yb3+☒Er3+ and at 5515 Å in BaY2F8 : Yb3+☒Ho3+ is reported. In BaY2F8 : Yb3+☒Er3+, oscillation takes place at 77 °K in Er3+ transitions from 4F9∕2 to the highest level of the ground state at 410 cm−1. Pumping of Er3+ results predominantly from up‐conversion produced by successive energy transfers from Yb3+; direct pumping of the metastable state and higher‐lying states of Er3+ is substantially less effective than up‐conversion. Oscillation in Ho3+ occurs in a transition from 5S2 to the highest level of the ground manifold at 385 cm−1. Up‐conversion and direct pumping contribute about equally to the inversion.
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