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1 Aug 1971

Volume 19, Issue 3, pp. 49-77


Compensation of Radiation Effects by Charge Transport in Metal‐Nitride‐Oxide‐Semiconductor Structures

J. R. Cricchi and D. F. Barbe

Appl. Phys. Lett. 19, 49 (1971); http://dx.doi.org/10.1063/1.1653817 (3 pages) | Cited 5 times

Online Publication Date: 22 October 2003

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We consider the effects of ionizing radiation on complementary metal‐nitride‐oxide‐silicon (CMNOS) structures for oxide thicknesses in the range 20–50 Å. The bidirectional radiation‐induced threshold‐voltage shifts in CMNOS structures are interpreted in terms of charge accumulation at the nitride‐oxide interface. The electronic recovery of preirradiation threshold‐voltage levels by carrier transport through the thin oxide is shown experimentally.

Hole Drift Velocity in Semi‐Insulating CdTe

C. Canali, G. Ottaviani, M. Martini, and K. Zanio

Appl. Phys. Lett. 19, 51 (1971); http://dx.doi.org/10.1063/1.1653818 (3 pages) | Cited 4 times

Online Publication Date: 22 October 2003

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The velocity field characteristic of holes in semi‐insulating CdTe has been measured using the time‐of‐flight technique in the space‐charge limited mode. Ohmic behavior was found up to an electric field of 35 kV∕cm. The measured mobility is 70 cm2V−1 sec−1. In the course of this experiment, the hole trapping time was also measured and found to be independent of the electric field.

Nonlinear Optical Properties of Hexagonal Silicon Carbide

S. Singh, J. R. Potopowicz, L. G. Van Uitert, and S. H. Wemple

Appl. Phys. Lett. 19, 53 (1971); http://dx.doi.org/10.1063/1.1653819 (4 pages) | Cited 16 times

Online Publication Date: 22 October 2003

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Optical second harmonic coefficients, refractive indices, and optical transmission of hexagonal SiC have been measured at room temperature. The nonlinear coefficients measured relative to quartz for a 1.064‐μm fundamental are d15SiC = (25±3)d11α−SiO2, d31SiC = (27±3)d11α−SiO2, and d33SiC = (45±5)d11α−SiO2. The observed Miller δ coefficients are in poor agreement with the values calculated from Levine's bond‐charge model. Type‐II phase matching should be achievable with SiC for fundamental wavelengths greater than 2.0 μm.

Observation of Possible Leaky Plate Waves in a Plating Using Ultrasonic Reflectivity Measurements

M. Luukkala and M. Hattunen

Appl. Phys. Lett. 19, 56 (1971); http://dx.doi.org/10.1063/1.1653820 (2 pages) | Cited 4 times

Online Publication Date: 22 October 2003

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The ultrasonic critical‐angle reflectivity method has been employed to measure the phase velocity of dispersive plate waves in a cadmium or zinc layer on an iron substrate. Relatively good agreement with theoretical computations is obtained, although an unexpected below‐cut‐off wave was detected in cadmium plating but not in zinc plating.

MOSFET Ultrasonic Surface‐Wave Detectors for Programmable Matched Filters

L. T. Claiborne, E. J. Staples, J. L. Harris, and J. P. Mize

Appl. Phys. Lett. 19, 58 (1971); http://dx.doi.org/10.1063/1.1653821 (3 pages)

Online Publication Date: 22 October 2003

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The piezoresistance effect in Si MOSFET p‐channel inversion layers is utilized for the detection of elastic surface waves. Theoretical results for detector sensitivity are described. It is shown that arrays of such detectors can be used for programmable surface‐wave signal processing. Variable delay‐line operation and the correlation of phase‐coded waveforms are demonstrated.

Effect of Source Resistance on Current‐Voltage Characteristics of Superconducting Weak Links

J. Warman and J. A. Blackburn

Appl. Phys. Lett. 19, 60 (1971); http://dx.doi.org/10.1063/1.1653822 (3 pages) | Cited 8 times

Online Publication Date: 22 October 2003

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See Also: Erratum

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The effect of finite source resistance on the computed current‐voltage characteristics of superconducting weak links is considered for both capacitive and inductive devices. Hysteresis is found to vanish for a sufficiently small‐source to shunt‐resistance ratios.

Writing Characteristics of MnBi Films for Holographic Recording

T. C. Lee and D. Chen

Appl. Phys. Lett. 19, 62 (1971); http://dx.doi.org/10.1063/1.1653823 (4 pages) | Cited 2 times

Online Publication Date: 22 October 2003

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In writing holograms on MnBi films, the two important parameters are the total beam energy and the thermal modulation depth, both imposed by the physical properties of the film. Different combinations of the two parameters lead to different types of holograms. Experimental results will be given to demonstrate the predicted varieties of recordings. Accurate measurements of diffraction efficiencies and interpretations of the result will be given.

Pulsed CO2 Gas‐Dynamic Laser

S. Yatsiv, E. Greenfield, F. Dothan‐Deutsch, D. Chuchem, and E. Bin‐Nun

Appl. Phys. Lett. 19, 65 (1971); http://dx.doi.org/10.1063/1.1653824 (4 pages) | Cited 13 times

Online Publication Date: 22 October 2003

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We report a pulsed combustion‐operated CO2 gas‐dynamic laser. A gas mixture is ignited in a combustion chamber to form heated CO2 and N2. The mixture expands through a supersonic nozzle, thereby causing population inversion in the CO2. Laser energy was about 20 J and pulse duration 0.3 sec. Variations of gain and pulse energy with gas composition and stagnation pressure are described.

Detection of Room‐Temperature Blackbody Radiation by Parametric Upconversion

J. Falk and J. M. Yarborough

Appl. Phys. Lett. 19, 68 (1971); http://dx.doi.org/10.1063/1.1653825 (3 pages) | Cited 8 times

Online Publication Date: 22 October 2003

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Room‐temperature thermal (blackbody) radiation has been detected via parametric‐frequency upconversion. Thermal radiation was mixed with the output of a Nd:YAG laser in proustite. The wavelength of the radiation upconverted was varied from 6.5 to 12.5 μ by rotating the proustite 20 deg. The spectral width of the blackbody radiation accepted by the upconverter was approximately 0.7 μ.

Hafnium‐Silicon Schottky Barriers: Large Barrier Height on p‐Type Silicon and Ohmic Behavior on n‐Type Silicon

A. N. Saxena

Appl. Phys. Lett. 19, 71 (1971); http://dx.doi.org/10.1063/1.1653826 (3 pages) | Cited 14 times

Online Publication Date: 22 October 2003

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Schottky‐barrier diodes of Hf on p‐type Si gave a height φMS = 0.90 eV, which is the largest value of φMS reported to date on Schottky barriers on either p‐ or n‐type Si. Excellent agreement was found between the φMS values determined from current‐voltage, activation energy, and capacitance‐voltage analyses. This large value of φMS of the Hf‐(p)‐Si Schottky barrier allows several new applications which were not possible before in the integrated circuit technology, such as clamping of p‐n‐p transistors and fabrication of enhancement‐mode p‐channel Schottky gate field‐effect transistors. Hafnium deposited on n‐type Si (ND≅5×1015 cm−3) gave Ohmic behavior suggesting the validity of the work‐function‐difference model for the Hf☒Si system. Under this assumption, the Schottky‐barrier analysis gives the work function of Hf=4.23±0.02 eV.

Frequency Dependence of Superconducting Cavity Q and Magnetic Breakdown Field

Mario Rabinowitz

Appl. Phys. Lett. 19, 73 (1971); http://dx.doi.org/10.1063/1.1653827 (4 pages) | Cited 6 times

Online Publication Date: 22 October 2003

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A theoretical explanation is given to account for the unexpected observation that L‐ and S‐band Nb superconducting cavities were found to have lower Q and lower magnetic breakdown field than those of the higher X‐band frequencies. Both effects can be related to the trapping of magnetic flux in the cavity walls. The frequency dependence arises from the frequency dependence of the resistivity of oscillating fluxoids. Calculations based on this model are in agreement with experimental observations.

Effect of Alloy Additions on Electromigration Failures in Thin Aluminum Films

A. Gangulee and F. M. d'Heurle

Appl. Phys. Lett. 19, 76 (1971); http://dx.doi.org/10.1063/1.1653828 (2 pages) | Cited 17 times

Online Publication Date: 22 October 2003

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In earlier work with aluminum thin films, electromigration through grain boundary diffusion has been found to be reduced by the addition of small amounts of copper and not to be affected by additions of silver and gold. Additions of other alloying elements having large atomic‐size differences with respect to aluminum, namely, magnesium, nickel, and chromium, have now also been shown to reduce the rate of electromigration.
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