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15 Aug 1971

Volume 19, Issue 4, pp. 79-122


Infrared Spectroscopy of CO Using a Tunable PbSSe Diode Laser

K.W. Nill, F.A. Blum, A.R. Calawa, and T.C. Harman

Appl. Phys. Lett. 19, 79 (1971); http://dx.doi.org/10.1063/1.1653841 (4 pages) | Cited 30 times

Online Publication Date: 22 October 2003

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The P(9) fundamental infrared absorption line of carbon monoxide at 2107.4 cm−1 has been studied with high resolution using a cw current tunable PbS0.82Se0.18 diode laser. Both the Doppler linewidth of 150 MHz and the absorption coefficient at line center of 2.1 cm−1∕Torr at room temperature have been measured directly for the first time with an estimated resolution of 1% of the linewidth.

Preferential Oxidation of Fe in Permalloy Films

C.H. Bajorek, M‐A. Nicolet, and C.H. Wilts

Appl. Phys. Lett. 19, 82 (1971); http://dx.doi.org/10.1063/1.1653842 (3 pages) | Cited 7 times

Online Publication Date: 22 October 2003

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On the basis of He‐ion backscattering, x‐ray fluorescence, and complementary measurements, it is unambiguously established for the first time that the oxide layer on the surface of oxidized 81% Ni‐19% Fe evaporated films is predominantly Fe‐oxide. Extrapolation of results for pure iron films indicates that the oxide is most likely antiferromagnetic α‐Fe2O3. On the basis of ferromagnetic resonance measurements, it is concluded that the oxide negligibly affects the pinning of the bulk spins at the film‐oxide interface.
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Comment on ``p‐Type Conduction in Li‐Doped ZnSe''

J. Dieleman

Appl. Phys. Lett. 19, 84 (1971); http://dx.doi.org/10.1063/1.1653843 (2 pages) | Cited 4 times

Online Publication Date: 22 October 2003

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p‐type conduction in Li‐doped ZnSe has been reported earlier, and the level at 0.62 ± 0.02 eV above the valence band observed in this material has been identified with trivalent Fe substitutionally incorporated on a Zn site.
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Reply to ``Comment on `p‐Type Conduction in Li‐Doped ZnSe'''

Y.S. Park

Appl. Phys. Lett. 19, 85 (1971); http://dx.doi.org/10.1063/1.1653844 (1 page) | Cited 2 times

Online Publication Date: 22 October 2003

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We reply to J. Dieleman on his comment on ``p‐Type Conduction in Li‐Doped ZnSe''. All four references cited by Dieleman do not prove p‐type conductivity in Li‐doped ZnSe. We have presented for the first time concrete evidence of p‐type conduction in Li‐doped ZnSe by presenting the data on transport measurements.

Zn Displacement Threshold in ZnTe

J.M. Meese

Appl. Phys. Lett. 19, 86 (1971); http://dx.doi.org/10.1063/1.1653845 (2 pages) | Cited 8 times

Online Publication Date: 22 October 2003

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The energy required to displace Zn atoms in ZnTe by irradiation with energetic electrons has been measured. Above an electron beam energy of 185 keV, corresponding to a maximum recoil energy of 7.35 eV for Zn atoms, the near‐band‐edge cathodoluminescence is observed to increase in intensity with increasing fluence. This rate of increase is proportional to the square of the electron beam energy near the displacement threshold.

Observation of Infrared‐Microwave Two‐Photon Transitions in NH3

Takeshi Oka and Tadao Shimizu

Appl. Phys. Lett. 19, 88 (1971); http://dx.doi.org/10.1063/1.1653846 (3 pages) | Cited 17 times

Online Publication Date: 22 October 2003

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An infrared‐microwave two‐photon absorption is observed in 15NH3. A tunable frequency of microwave radiation is ``added'' to a fixed frequency of laser radiation utilizing the nonlinearity of the molecular absorption. This method will be useful for high‐resolution infrared spectroscopy and for experiments which use laser radiation for pumping molecular energy levels.

Effects of Radiation on Surface Resistance of Superconducting Niobium Cavity

H.J. Halama

Appl. Phys. Lett. 19, 90 (1971); http://dx.doi.org/10.1063/1.1653847 (2 pages) | Cited 6 times

Online Publication Date: 22 October 2003

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The author has made the first measurements of radiation damage in a superconducting niobium cavity operated at microwave frequencies. It is shown that even a rather low radiation level of 1015 protons∕cm2 with an energy of 175 MeV increases significantly the residual surface resistance at high power levels. These data are very pertinent to the construction of superconducting linear accelerators.

Optical Activity of Ferroelectric 5PbO⋅3GeO2 Single Crystals

Hiroshi Iwasaki and Kiyomasa Sugii

Appl. Phys. Lett. 19, 92 (1971); http://dx.doi.org/10.1063/1.1653848 (2 pages) | Cited 51 times

Online Publication Date: 22 October 2003

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Optical rotatory power (ρ = ± 5°35′∕mm for λ = 6328 Å) was found in the Czochralski‐grown ferroelectric crystal 5PbO⋅3GeO2. Reversal of the ferroelectric spontaneous polarization Ps caused the enantiomorphic transformation of the crystal and consequently the change in the sign of the optical rotatory power. The gyration coefficient g33 was found to fit the equation g33 = γ33Ps, where γ33 is the electrogyration tensor in the paraelectric phase.

Cylindrical Magnetic Domain Epitaxial Films with Low Defect Density

J.E. Geusic, H.J. Levinstein, S.J. Licht, L.K. Shick, and C.D. Brandle

Appl. Phys. Lett. 19, 93 (1971); http://dx.doi.org/10.1063/1.1653849 (3 pages) | Cited 4 times

Online Publication Date: 22 October 2003

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Liquid‐phase epitaxial, Er2Eu1Ga0.7Fe4.3O12, films have been grown on 〈111〉 Gd3Ga5O12 substrates with a magnetic‐defect density as low as 2 defect∕cm2.

Cylindrical Magnetic Domain Epitaxial Film Characterization: Device and Growth Implications

F.B. Hagedorn, W.J. Tabor, J.E. Geusic, H.J. Levinstein, S.J. Licht, and L.K. Shick

Appl. Phys. Lett. 19, 95 (1971); http://dx.doi.org/10.1063/1.1653850 (4 pages) | Cited 11 times

Online Publication Date: 22 October 2003

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The effects of magnetic material parameter variations on the operating bias‐field and bubble diameter ranges of magnetic bubble devices are discussed theoretically. In addition, experimental measurements are reported of spatial variations observed in liquid‐phase epitaxial garnet films of nominal composition Er2Eu1Ga0.7Fe4.3O12. Data are given for a film whose thickness was constant to ± 2.5% over an area of 0.6 cm2.

Efficient Electroluminescence from Zinc‐Diffused Ga1−xAlxAs Diodes at 25°C

E. G. Dierschke, L. E. Stone, and R. W. Haisty

Appl. Phys. Lett. 19, 98 (1971); http://dx.doi.org/10.1063/1.1653851 (3 pages) | Cited 15 times

Online Publication Date: 22 October 2003

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Efficient Ga1−xAlxAs light‐emitting diodes with zinc‐diffused junctions have been fabricated. External quantum efficiencies as high as 14% for near‐infrared diodes (8150 Å) and 4% for visible red diodes (6950 Å) have been achieved at 25°C. The high efficiencies result from using a hemispherically shaped emitter with a composition profile which reduces internal bulk absorption.

Cross‐Beam Electric‐Discharge Convection Laser

Alan C. Eckbreth and Jack W. Davis

Appl. Phys. Lett. 19, 101 (1971); http://dx.doi.org/10.1063/1.1653829 (3 pages) | Cited 15 times

Online Publication Date: 22 October 2003

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An experimental investigation of a 60‐cm‐wide × 2.5‐cm‐high N2☒CO2 cross‐beam electric‐discharge convection laser (EDCL) is described. Experiments relating to the achievement of uniform and stable discharges in the rectangular channel and measurements of laser optical properties are reviewed.

Millimeter and Submillimeter Wave Laser Action in Symmetric Top Molecules Optically Pumped via Parallel Absorption Bands

T. Y. Chang and J. D. McGee

Appl. Phys. Lett. 19, 103 (1971); http://dx.doi.org/10.1063/1.1653830 (3 pages) | Cited 25 times

Online Publication Date: 22 October 2003

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Twenty‐one new laser lines with wavelengths from 192.8 μm to 1.8144 mm have been observed in methyl fluoride, acetonitrile, and methyl acetylene pumped by a CO2 laser. A novel form of high precision spectroscopy based on the relationships among the emission and absorption wavelengths is also described.

Ferroelastic Behavior of PLZT Ceramics When Subjected to Large Tensile Strains

A. H. Meitzler and H. M. O'Bryan

Appl. Phys. Lett. 19, 106 (1971); http://dx.doi.org/10.1063/1.1653831 (3 pages) | Cited 17 times

Online Publication Date: 22 October 2003

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Thin plates of perovskite ferroelectric lead lanthanum zirconate titanate (PLZT) ceramics bonded to plastic substrates strained in flexure have shown the ability to withstand large tensile strains (∼10−3). This ability results from two interrelated mechanisms: (i) a structural phase change, and (ii) ferroelastic switching of the polarization direction. In the experiments on which these conclusions are based, crystal structure was determined from x‐ray data and strain was determined from both x‐ray and resistance wire strain gauge data. The results presented here establish that PLZT materials show ferroelastic behavior.

0.2‐W Repetitively Pulsed Flashlamp‐Pumped Dye Laser

M. E. Mack

Appl. Phys. Lett. 19, 108 (1971); http://dx.doi.org/10.1063/1.1653832 (3 pages) | Cited 2 times

Online Publication Date: 22 October 2003

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Using a novel fast risetime flashlamp pulsed at 10–50 pps with up to 50 J per pulse, laser emission has been obtained from a number of dyes with average outputs ranging to 200 mW.

Magnetization Properties of Nonideal Type‐II Superconductors Transporting Sinusoidal Alternating Current in a Longitudinal Magnetic Field

M. Sugahara and S. Kato

Appl. Phys. Lett. 19, 111 (1971); http://dx.doi.org/10.1063/1.1653833 (3 pages) | Cited 8 times

Online Publication Date: 22 October 2003

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Observations are presented on the ac magnetization of Nb‐25% Zr and Nb‐48% Ti wires in a longitudinal field Hz0. When Hz0 is higher than the field induced by the impressed ac conduction current, the magnetization data agree with the calculation based on a force‐free model. The magnetization process of Nb☒Zr shows a large deviation from the usual critical state behavior.

Infrared Photon Counting by Ge Avalanche Diodes

W. Haecker, O. Groezinger, and M. H. Pilkuhn

Appl. Phys. Lett. 19, 113 (1971); http://dx.doi.org/10.1063/1.1653834 (3 pages) | Cited 17 times

Online Publication Date: 22 October 2003

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Germanium avalanche diodes with statistically independent microplasma pulses have been successfully used as very sensitive photon counters at 77°K and at photon energies near 0.8 eV. The dark pulse rate at low temperatures was found to be limited by band‐to‐band tunnelling of carriers, and at high temperatures by thermal generation of minority carriers. Tunnel‐assisted absorption was observed at energies slightly smaller than the band gap.

Filamentary Conduction in VO2 Coplanar Thin‐Film Devices

J. Duchene, M. Terraillon, P. Pailly, and G. Adam

Appl. Phys. Lett. 19, 115 (1971); http://dx.doi.org/10.1063/1.1653835 (3 pages) | Cited 28 times

Online Publication Date: 22 October 2003

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Filaments have been observed in VO2 coplanar thin‐film devices and their I‐V characteristic investigated. An analysis of the evolution of the temperature profile in the VO2 film is given.

Pure Shear Elastic Surface Wave Guided by the Interface of Two Semi‐Infinite Media

C. Maerfeld and P. Tournois

Appl. Phys. Lett. 19, 117 (1971); http://dx.doi.org/10.1063/1.1653836 (2 pages) | Cited 59 times

Online Publication Date: 22 October 2003

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An acoustic shear surface wave can be guided by the interface of two semi‐infinite media in contact if one, at least, of these two media is piezoelectric. After a study of the surface‐wave characteristics, the existence conditions are stated. For example, such a wave can propagate along the interface of two identical crystals, in class 6 mm, when the C axes of these crystals, both parallel to the interface and perpendicular to the propagation direction, are in opposite directions.

High‐Efficiency Room‐Temperature 2.06‐μm Laser Using Sensitized Ho3+:YLF

E. P. Chicklis, C. S. Naiman, R. C. Folweiler, D. R. Gabbe, H. P. Jenssen, and A. Linz

Appl. Phys. Lett. 19, 119 (1971); http://dx.doi.org/10.1063/1.1653837 (3 pages) | Cited 54 times

Online Publication Date: 22 October 2003

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Pulsed room‐temperature laser action at 2.06 μm has been achieved using Ho3+:YLF (LiF4) sensitized with Er3+ and Tm3+. An unoptimized cavity gave a threshold of 35 J and a slope efficiency of 1.3% in normal mode with an output mirror of 62% T. A slope efficiency of 2% and a 65‐J threshold were observed in Q‐switched operation along with Q‐switched energy of >500 mJ from a 0.9×⅛‐in. rod. The sensitizer ions have broad absorption bands and transfer times (to the active ion) of 150–200 μsec.
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ERRATUM: Indirect Electron Drift Velocity versus Electric Field Measurement in GaAs

E. M. Bastida, G. Fabri, V. Svelto, and F. Vaghi

Appl. Phys. Lett. 19, 122 (1971); http://dx.doi.org/10.1063/1.1653838 (1 page) | Cited 1 time

Online Publication Date: 22 October 2003

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Abstract Unavailable
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ERRATUM: Novel Helical Path Surface Wave Delay Line

M. F. Lewis and E. Patterson

Appl. Phys. Lett. 19, 122 (1971); http://dx.doi.org/10.1063/1.1653839 (1 page)

Online Publication Date: 22 October 2003

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Abstract Unavailable
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ERRATUM: Excitation Mechanisms in the Zinc Ion Laser

G. J. Collins, R. C. Jensen, and W. R. Bennett

Appl. Phys. Lett. 19, 122 (1971); http://dx.doi.org/10.1063/1.1653840 (1 page)

Online Publication Date: 22 October 2003

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