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1 Oct 1971

Volume 19, Issue 7, pp. 211-248


Theoretical Description of the Electrical CO Laser

R. E. Center and G. E. Caledonia

Appl. Phys. Lett. 19, 211 (1971); http://dx.doi.org/10.1063/1.1653889 (3 pages) | Cited 7 times

Online Publication Date: 22 October 2003

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A pumping mechanism based on vibrational energy exchange under thermal nonequilibrium conditions is used to predict the performance of the electrical CO laser. Qualitative agreement has been obtained for the power spectral distribution and the cavity flux at several gas temperatures, indicating that this vibrational exchange process may be the dominant mechanism in the highly efficient electric CO laser.

Electrically Controllable Domains in Nematic Liquid Crystals

W. Greubel and U. Wolff

Appl. Phys. Lett. 19, 213 (1971); http://dx.doi.org/10.1063/1.1653890 (3 pages) | Cited 40 times

Online Publication Date: 22 October 2003

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It is reported here that it was observed that in suitable nematic liquid crystals in very thin sandwich cells from the threshold of domain formation up to the highest practicable field strength, the inverse domain width is proportional to the applied dc electric field, while dynamic scattering does not occur. Since such a cell performs as an electrically controllable optical grating which can be made to have very high diffraction efficiency, this effect may also be of practical interest.

Transparent Phase Images in Photoactivated Liquid Crystals

J. D. Margerum, T. D. Beard, W. P. Bleha, and S. ‐Y. Wong

Appl. Phys. Lett. 19, 216 (1971); http://dx.doi.org/10.1063/1.1653891 (3 pages) | Cited 8 times

Online Publication Date: 22 October 2003

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Photoactivated electric field effects in nematic liquid crystals serve as reversible nearly real‐time techniques for recording phase‐type holograms. In a sandwich‐type cell, a photoconductive coating separates one conductive electrode from the liquid‐crystal layer, which is operated below the threshold voltage for dynamic scattering. In CdS cells, transient first‐order diffraction efficiencies of 10–30% are obtained within 0.1–0.2 sec from visible light exposures of less than 1 μJ∕cm2. A 10‐μW∕cm2 Ar‐ion laser interference pattern of 40 cycle∕mm produced a steady‐state first‐order diffraction efficiency of 8% in a 13‐μm thickness of MBBA in a cell operated at 4‐V dc. Resolutions up to 100 cycle∕mm are observed for this thickness of liquid crystal.

Carrier Profile Change for Phosphorus‐Diffused Layers on Low‐Temperature Heat Treatment

F. N. Schwettmann and D. L. Kendall

Appl. Phys. Lett. 19, 218 (1971); http://dx.doi.org/10.1063/1.1653892 (3 pages) | Cited 14 times

Online Publication Date: 22 October 2003

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The low‐temperature annealing of phosphorus‐diffused layers in silicon is described. The sheet resistance of the diffused layer is found to increase with time at temperatures of 450–800°C. Carrier profiles for slices which have reached an equilibrium value of sheet resistance indicate a substantial decrease in the surface concentration. An Arrhenius plot of this concentration gives a straight line with an activation energy of 0.33 eV. In addition to a decrease in surface concentration, anomalously fast diffusion near the junction causes a significant tail on the profile. A model is presented to account for these results.

Growth of In2Bi Whiskers

J. R. Huckle, J. H. Davis, and R. B. Lal

Appl. Phys. Lett. 19, 220 (1971); http://dx.doi.org/10.1063/1.1653893 (2 pages) | Cited 2 times

Online Publication Date: 22 October 2003

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The first compound whisker grown by squeeze technique (In2Bi) is reported. Rotating crystal x‐ray analysis and melting‐point measurements confirmed that the whiskers were In2Bi. The whisker axis coincided with the 〈001〉 direction for all four whiskers. A scanning electron microscope photograph indicates that the whiskers have diameters of a few μ and a morphology similar to tin whiskers.

Electric Field Induced Memory Switching in Thin Films of the Chalcogenide System Ge☒As☒Se

R. Pinto and K. V. Ramanathan

Appl. Phys. Lett. 19, 221 (1971); http://dx.doi.org/10.1063/1.1653894 (3 pages) | Cited 5 times

Online Publication Date: 22 October 2003

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A bistable switching has been observed in amorphous films of semiconducting glasses in the system Ge☒As☒Se in the thickness range 0.3–3 μm. The absence of a heat‐induced devitrification and energy production considerations for switching showed that Joule heat produced while switching plays only a minor role in these glasses. Hence, the observed memory action has been attributed to an electric field induced phase transition along a filamentary path in the glass film.

Microwave‐Biased Photoconductivity Experiments Using Microwave‐Integrated‐Circuit Techniques

P. R. Herczfeld and Don Dodson

Appl. Phys. Lett. 19, 223 (1971); http://dx.doi.org/10.1063/1.1653895 (3 pages)

Online Publication Date: 22 October 2003

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Microwave‐biased photoconductivity measurements on sulfur‐sensitized CdS have been made using microwave‐integrated‐circuit transmission lines. Results are similar to those found using waveguide and show a difference in dc and microwave‐biased photoconductivity.

Efficient Mode‐Locked Frequency‐Doubled Operation of an Nd:YAlO3 Laser

R. R. Rice and G. H. Burkhart

Appl. Phys. Lett. 19, 225 (1971); http://dx.doi.org/10.1063/1.1653896 (3 pages) | Cited 8 times

Online Publication Date: 22 October 2003

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Narrow 0.540‐μm second harmonic (SH) pulses (∼250 psec) have been observed from a mode‐locked Nd:YAlO3 laser at a 300‐mW SH power. The SH conversion efficiency observed was 50%. The laser was mode locked and frequency doubled using a single Ba2NaNb5O15 crystal, and emitted pulses at a frequency of c∕l rather than c∕2l at high conversion efficiencies. Since Nd:YAlO3 is transparent at 0.54 μm, complete extraction of the SH power generated in both directions is possible.

Low‐Frequency Fluctuations of a GaAs Diode in the Relaxation Regime

M. Stoisiek, D. Wolf, and H. J. Queisser

Appl. Phys. Lett. 19, 228 (1971); http://dx.doi.org/10.1063/1.1653897 (3 pages) | Cited 3 times

Online Publication Date: 22 October 2003

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The reverse current of GaAs diodes fluctuates at frequencies between 2 and 10 Hz. In these diodes, the dielectric relaxation time τD exceeds the carrier lifetime τ0. This relaxation‐case condition has been achieved by compensating oxygen doping. The fluctuation frequency depends on the applied voltage and on temperature. A thermal activation energy has been found corresponding to the energy of the oxygen impurities. The fluctuations can be explained by the slow motion of trapped charge packets which are injected under space‐charge limitation.

An Electrically Excited Gas‐Dynamic Carbon Monoxide Laser

J. W. Rich, H. M. Thompson, C. E. Treanor, and J. W. Daiber

Appl. Phys. Lett. 19, 230 (1971); http://dx.doi.org/10.1063/1.1653898 (3 pages) | Cited 12 times

Online Publication Date: 22 October 2003

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A carbon monoxide laser is reported which utilizes a glow discharge in the plenum of a supersonic nozzle. The discharge selectively excites the CO vibrational mode, while the gas translational temperature remains relatively cold. Continuous output is obtained from optical cavities established transverse to the flow at two nozzle area ratios. Maximum laser power obtained to date is 6.8 W corresponding to an efficiency of 0.6%, based on electrical power input.

Low‐Loss Image for Surface Scanning Electron Microscope

Oliver C. Wells

Appl. Phys. Lett. 19, 232 (1971); http://dx.doi.org/10.1063/1.1653899 (4 pages) | Cited 56 times

Online Publication Date: 22 October 2003

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Images have been obtained from the surface scanning electron microscope (SEM) by collecting backscattered electrons that have suffered a small energy loss in the specimen. This method can be applied to smooth specimens when viewed at oblique incidence. The modulation depth in the electron channelling pattern can be as great as 75%, as compared with 2–5% for the secondary electron signal or 40% for the backscattered electron signal. In surface microscopy, the image is obtained from a surface layer of thickness about 100 Å, so that the effects of electron penetration are greatly reduced. A point‐to‐point resolution of 170 Å has been obtained.

Influence of Water on the Domain Structure of Epitaxy Films of Gadolinium Iron Garnet and Yttrium Iron Garnet

H. Lessoff

Appl. Phys. Lett. 19, 235 (1971); http://dx.doi.org/10.1063/1.1653900 (3 pages)

Online Publication Date: 22 October 2003

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The effect of moisture on the magnetic domain patterns of single‐crystal gadolinium iron garnet and yttrium iron garnet was observed. The change in magnetic domain structure and the disappearance of magnetic ``bubble'' domains is related to a reduction of surface stresses by water.

CdGeAs2—A New Nonlinear Crystal Phasematchable at 10.6 μm

R. L. Byer, H. Kildal, and R. S. Feigelson

Appl. Phys. Lett. 19, 237 (1971); http://dx.doi.org/10.1063/1.1653901 (4 pages) | Cited 59 times

Online Publication Date: 22 October 2003

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In this paper, we present the optical and nonlinear optical properties of a new nonlinear crystal CdGeAs2. The chalcopyrite structure (42 m) crystal is positive birefringent with Δn equal to 0.1. It is phasematchable for second harmonic generation (SHG) and parametric interactions over most of its transparency range from 2.4 to 18 μm. In addition, it has the largest known nonlinear coefficient for a phasematchable crystal with the exception of tellurium. The measured nonlinear coefficient is 3.4 times GaAs. The calculated doubling efficiency for SHG of a CO2 laser is 10 times that of tellurium. The crystal promises to be a very useful nonlinear material for parametric interactions between 3 and 18 μm.

Novel Electro‐Optical Storage Effect in a Certain Smectic Liquid Crystal

C. Tani

Appl. Phys. Lett. 19, 241 (1971); http://dx.doi.org/10.1063/1.1653902 (2 pages) | Cited 24 times

Online Publication Date: 22 October 2003

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A novel electro‐optical storage effect has been found in a certain smectic liquid crystal. The optical transmission of a smectic liquid film changes with the application of a dc or an ac exciting voltage and remains in the excited state after the field is removed. Some different effects are observed in a thin (12‐μ) and a thick (100‐μ) sample. The optical contrast ratios of a thin sample are about 10 : 1. The decay of the optical storage effect is a few percent in a week at 42 °C. V☒I characteristics of the samples exhibit negative resistance which seems to suggest the change of the molecular state induced by electric fields.

Circuit Controlled Current Instabilities in ``S‐Shaped'' Negative Differential Conductivity Elements

M. P. Shaw and I. J. Gastman

Appl. Phys. Lett. 19, 243 (1971); http://dx.doi.org/10.1063/1.1653903 (3 pages) | Cited 18 times

Online Publication Date: 22 October 2003

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We compare the results of our theoretical analysis of an ``S‐shaped'' negative differential conductivity (NDC) element in a circuit containing a capacitor in parallel with the NDC element in series with an inductor, with the results of our experiments on PNPN and Ovonic diodes. All the major features of the experimental results are accounted for by the theory. These include, for the PNPN diode, switching to stable points in the DNC region and the appearance of damped chirps in response to a voltage ramp; for the Ovonic diode, voltage tunable relaxation oscillations. The theory provides a framework within which one can categorize and characterize the various modes of behavior observed in all S‐shaped NDC elements.

Nonlinear Optical Response of Conduction Electrons in a Superlattice

R. Tsu and L. Esaki

Appl. Phys. Lett. 19, 246 (1971); http://dx.doi.org/10.1063/1.1653904 (3 pages) | Cited 58 times

Online Publication Date: 22 October 2003

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The nonlinear optical response of conduction electrons in a one‐dimensional superlattice has been examined theoretically. Our results indicate that such structure may be a promising medium for nonlinear mixing of photons.
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Erratum: Effect of Source Resistance on Current‐Voltage Characteristics of Superconducting Weak Links

J. Warman and J. A. Blackburn

Appl. Phys. Lett. 19, 248 (1971); http://dx.doi.org/10.1063/1.1653905 (1 page)

Online Publication Date: 22 October 2003

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