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15 Oct 1971

Volume 19, Issue 8, pp. 251-307


Intercavity Scanning of a CO2 Laser by Electron‐Beam‐Trigger Excitatior

Leo Beiser

Appl. Phys. Lett. 19, 251 (1971); http://dx.doi.org/10.1063/1.1653906 (3 pages) | Cited 1 time

Online Publication Date: 22 October 2003

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A CO2 laser in a transversely degenerate resonator was induced to lase by a localized electron‐beam‐triggering technique, thereby achieving intercavity mode selection. The CO2 idler and electron‐beam‐triggered driver stages were positioned in individual legs of a split confocal resonator. The successful testing of this incremental excitation process is now reported, along with the motivation for localized gain control for internally scanned lasers.

Stimulated Emission Involving the Nitrogen Isoelectronic Trap in GaAs1−xPx

N. Holonyak, D. R. Scifres, R. D. Burnham, M. G. Craford, W. O. Groves, and A. H. Herzog

Appl. Phys. Lett. 19, 254 (1971); http://dx.doi.org/10.1063/1.1653907 (3 pages) | Cited 30 times

Online Publication Date: 22 October 2003

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Earlier work on III–V semiconductor lasers has shown that stimulated emission occurs on band‐to‐band transitions or via transitions involving donors or acceptors. Based on the behavior of the N isoelectronic trap in promoting efficient carrier recombination in GaP, the present work shows that the N isoelectronic trap in GaAs1−xPx is distinct and over part of the composition range x it can be operated in recombination in the stimulated emission (laser) regime, thus establishing a fundamental new laser transition in a III−V semiconductor. These results (4.2 and 77°K) are obtained by means of optical pumping of lightly doped n‐type samples of estimated high nitrogen concentration.

Stimulated Emission in an Indirect Semiconductor: N Isoelectronic Trap‐Assisted Recombination in GaAs1−xPx (x > 0.44)

N. Holonyak, D. R. Scifres, M. G. Craford, W. O. Groves, and D. L. Keune

Appl. Phys. Lett. 19, 256 (1971); http://dx.doi.org/10.1063/1.1653908 (3 pages) | Cited 26 times

Online Publication Date: 22 October 2003

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Due to the short‐range nature of the N isoelectronic trap potential in GaAs1−xPx and the favorable band structure of this III–V compound, strong recombination radiation can be excited on either side of the direct‐indirect transition (x=0.44, 77°K). By means of cw excitation with an argon‐ion laser, stimulated emission is demonstrated at 77°K in N‐doped indirect GaAs1−xPx (x=0.50) operating on NN pair recombination transitions.

A Mode‐Locked cw Dye Laser

A. Dienes, E. P. Ippen, and C. V. Shank

Appl. Phys. Lett. 19, 258 (1971); http://dx.doi.org/10.1063/1.1653909 (3 pages) | Cited 23 times

Online Publication Date: 22 October 2003

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The operation of a mode‐locked cw dye laser is described. A stable output of repetitive 55‐psec pulses has been obtained with an acousto‐optic loss modulator in the dye‐laser cavity. Pulse widths have been determined by autocorrelation measurements using second harmonic generation in ADP.

Mode Locking of the cw Dye Laser

D. J. Kuizenga

Appl. Phys. Lett. 19, 260 (1971); http://dx.doi.org/10.1063/1.1653910 (4 pages) | Cited 11 times

Online Publication Date: 22 October 2003

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A cw dye laser has been mode locked with a LiNbO3 phase modulator. Good mode locking was difficult to obtain. Pulses ∼500 psec wide with substructure at the detector resolution were observed. With an internal thin etalon, shorter pulses were observed with very distinct substructure at the detector resolution. Under certain circumstances pulses 200 psec wide were obtained.

Explosion‐Pumped Gas‐Dynamic CO2 Laser

J. Tulip and H. Seguin

Appl. Phys. Lett. 19, 263 (1971); http://dx.doi.org/10.1063/1.1653911 (3 pages) | Cited 11 times

Online Publication Date: 22 October 2003

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A gas‐dynamic CO2 laser, in which the reservoir condition is achieved using an explosion, is described. Pulse energies of several joules have been obtained using common hydrocarbon fuels, including propane and natural gas.

Wideband CO2 Laser Second Harmonic Generation Phase Matched in GaAs Thin‐Film Waveguides

D. B. Anderson and J. T. Boyd

Appl. Phys. Lett. 19, 266 (1971); http://dx.doi.org/10.1063/1.1653912 (3 pages) | Cited 48 times

Online Publication Date: 22 October 2003

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Phase‐matched CO2 laser second harmonic generation has been observed in GaAs thin‐film waveguides. Phase matching is accomplished through the use of dielectric waveguide dispersion. Large values of the phase‐matched bandwidth are observed and attributed partly to the nature of waveguide phase matching and partly to tapering of the waveguide thickness.

Electronic Tuning of a Dye Laser Using the Acousto‐Optic Filter

D. J. Taylor, S. E. Harris, S. T. K. Nieh, and T. W. Hansch

Appl. Phys. Lett. 19, 269 (1971); http://dx.doi.org/10.1063/1.1653913 (3 pages) | Cited 33 times

Online Publication Date: 22 October 2003

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A dye laser which is electronically tunable over 780 Å has been obtained by inserting a CaMoO4 acousto‐optic filter into the dye‐laser cavity. A filter half‐power linewidth of 6.8 Å yields a laser linewidth of 1.35 Å. Oscillation at two simultaneous independently tunable wavelengths and electronically variable output coupling has been observed.

In1−xGaxP p‐n Junction Lasers

H. M. Macksey, N. Holonyak, D. R. Scifres, R. D. Dupuis, and G. W. Zack

Appl. Phys. Lett. 19, 271 (1971); http://dx.doi.org/10.1063/1.1653914 (3 pages) | Cited 27 times

Online Publication Date: 22 October 2003

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The laser operation of In1−xGaxP (x∼0.27) p‐n junctions is demonstrated at 4.2 and 77°K. The n‐type material for the junctions is grown at a fixed temperature (900–950°C) from an In solution with the InP and GaP source crystal introduced into the solution at slightly higher temperature. The p‐n junctions are formed at 700°C by Zn diffusion from an In + 10% Zn source. In comparison with InP, the threshold currents for In1−xGaxP junctions are large, which is attributed to the problems associated with introducing Zn into the In☒Ga sublattice.

Structure of Moving Domain Walls in Magnetic Materials

Ernst Schlömann

Appl. Phys. Lett. 19, 274 (1971); http://dx.doi.org/10.1063/1.1653915 (3 pages) | Cited 29 times

Online Publication Date: 22 October 2003

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It is shown that in the regions far away from the center of a moving domain wall the distribution of magnetization is the same as in a spin wave of complex wave number. The structure of the moving wall is calculated rigorously for wall velocities v smaller than a certain critical velocity v1. At the critical velocity the derivative of the wall energy with respect to v becomes infinite. The wall mobility in the subcritical region (v < v1) is inversely proportional to the wall energy.

Observation of Xerographic Electrostatic Latent Images with a Scanning Electron Microscope

G. F. Fritz, D. C. Hoesterey, and L. E. Brady

Appl. Phys. Lett. 19, 277 (1971); http://dx.doi.org/10.1063/1.1653916 (2 pages) | Cited 5 times

Online Publication Date: 22 October 2003

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Xerographic latent images produced by the optical exposure of electrostatically charged photoconductive films have been studied with a scanning electron microscope. This technique provides a tool for studying the structure of the latent image independently of the development process.

Enhancement of Piezoelectric Surface‐Wave Coupling by Thin‐Film Perturbation

T. M. Reeder, G. S. Kino, and P. L. Adams

Appl. Phys. Lett. 19, 279 (1971); http://dx.doi.org/10.1063/1.1653917 (2 pages) | Cited 3 times

Online Publication Date: 22 October 2003

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Experimental measurements of interdigital transducer input impedance are used to demonstrate that the coupling constant for piezoelectric surface waves can be enhanced by the use of an appropriate thickness dielectric overlay film. Measurements of the SiO2∕YZ lithium niobate configuration are described and compared with an exact calculation and a qualitative perturbation analysis.

Barrier Inhomogeneities on a Si☒SiO2 Interface by Scanning Internal Photoemission

T. H. DiStefano

Appl. Phys. Lett. 19, 280 (1971); http://dx.doi.org/10.1063/1.1653918 (3 pages) | Cited 30 times

Online Publication Date: 22 October 2003

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Scanning internal photoemission has been used to map barrier inhomogeneities in a sodium‐contaminated Si☒SiO2 interface. The interface barrier is lowered in local regions at which sodium accumulates.

Optical Levitation by Radiation Pressure

A. Ashkin and J. M. Dziedzic

Appl. Phys. Lett. 19, 283 (1971); http://dx.doi.org/10.1063/1.1653919 (3 pages) | Cited 187 times

Online Publication Date: 22 October 2003

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The stable levitation of small transparent glass spheres by the forces of radiation pressure has been demonstrated experimentally in air and vacuum down to pressures ∼1 Torr. A single vertically directed focused TEM00‐mode cw laser beam of ∼250 mW is sufficient to support stably a ∼20‐μ glass sphere. The restoring forces acting on a particle trapped in an optical potential well were probed optically by a second laser beam. At low pressures, effects arising from residual radiometric forces were seen. Possible applications are mentioned.

Correlation between Backward Stimulated Raman Pulse and Moving Focus in Liquids

M. M. T. Loy and Y. R. Shen

Appl. Phys. Lett. 19, 285 (1971); http://dx.doi.org/10.1063/1.1653920 (3 pages) | Cited 11 times

Online Publication Date: 22 October 2003

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We have studied the correlation between backward stimulated Raman pulse and small‐scale ``filament'' induced by a Q‐switched laser pulse in Kerr liquids. We show that the filament is the result of a moving focus and that the backward Raman pulse is initiated by the moving focus inside the liquid cell.

Channel Shortening in MOS Transistors during Junction Walk‐Out

C. A. Neugebauer, J. F. Burgess, R. E. Joynson, and J. L. Mundy

Appl. Phys. Lett. 19, 287 (1971); http://dx.doi.org/10.1063/1.1653921 (3 pages) | Cited 2 times

Online Publication Date: 22 October 2003

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The walk‐out of the breakdown voltage of the junctions of p‐channel MOS transistors was found to be accompanied by an increase in the transconductance. An explanation for this relationship is offered here in terms of electron injection into the gate oxide near the junctions, and subsequent trapping there. The rate of junction walk‐out depends not only on the total injected negative charge, but also on the value of the injection current itself, increasing at higher injection currents. The ratio of the injection current to the total junction current is found to decrease with increasing breakdown voltage.

Room‐Temperature cw Operation of a GaAs1−xPx Diode‐Pumped YAG:Nd Laser

F. W. Ostermayer, R. B. Allen, and E. G. Dierschke

Appl. Phys. Lett. 19, 289 (1971); http://dx.doi.org/10.1063/1.1653922 (4 pages) | Cited 17 times

Online Publication Date: 22 October 2003

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Room‐temperature (20°C) cw operation of a YAG: Nd laser pumped by GaAs1−xPx electroluminescent diodes is reported. A linear array of sixty‐four 0.46‐mm‐diam domed diodes was coupled to a 1.5‐mm‐diam × 50‐mm‐long laser rod by a semielliptical cylindrical reflector. At an electrical input to the diode array of 30 W, the optical pumping power was 0.90 W (average diode efficiency ≈ 3%) and the laser output power was 1.4 mW. The laser was also operated with 1‐ and 2‐msec pulses of pump power. At an electrical input of 30 W, the laser output at the end of a 1‐msec pulse was 4.9 mW, and at an electrical input of 44 W, the output was 15.7 mW. The discrepancy between the pulsed and cw output powers has been attributed primarily to heating effects in the diodes. When the laser rod was cooled to 0°C, the pulsed output at an input of 44 W was 55 mW.

Effect of Redundant Microstructure on Electromigration‐Induced Failure

Arthur J. Learn

Appl. Phys. Lett. 19, 292 (1971); http://dx.doi.org/10.1063/1.1653923 (4 pages) | Cited 14 times

Online Publication Date: 22 October 2003

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Aluminum films with grain boundaries staggered throughout the film thickness, and hence with nonoverlapping sites for electromigration‐induced failure, were prepared by vacuum deposition in layered or extremely fine‐grained form. Mean lifetimes before the occurrence of electrical opens were an order of magnitude larger than those for control films having non‐redundant grain structure. Heat‐treatment effects which reduced lifetimes to values comparable to control lifetimes were interpreted in terms of either a lifetime minimum for grain size ∼ 0.6 μ or disruption of the layered structure.

Semiconducting Properties of Cs2ZrCl6 and Cs2HfCl6

A. Tzalmona, Z. Kaplan, and A. Gabay

Appl. Phys. Lett. 19, 295 (1971); http://dx.doi.org/10.1063/1.1653924 (1 page)

Online Publication Date: 22 October 2003

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It has been established that heat treatment in cesium vapor can convert the insulating Cs2ZrCl6 and Cs2HfCl6 crystals to semiconductors.
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Comment on ``Formation of Vacancy Pits on the Surface of Aluminum on Quench Annealing''

G. Wyon, C. Brichet, and C. Roques‐Carmes

Appl. Phys. Lett. 19, 296 (1971); http://dx.doi.org/10.1063/1.1653925 (2 pages) | Cited 1 time

Online Publication Date: 22 October 2003

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Quench‐annealing experiments on aluminum (99.995% purity) have shown that vacancy condensation pits on the surface can only be formed when the annealing temperature is 200°C or more. In contrast to slow‐cooling treatments, the pit distribution is then uniform over the whole surface; no depleted zones are observed around grain boundaries and subboundaries. There is a strong disagreement between our own results and Tariyal and Ramaswami's paper which showed pit formation by quench annealing at 20 and 50°C. The reasons for such a disagreement are discussed.

Modification of Magnetic Anisotropy in Garnets by Ion Implantation

R. Wolfe, J. C. North, R. L. Barns, M. Robinson, and H. J. Levinstein

Appl. Phys. Lett. 19, 298 (1971); http://dx.doi.org/10.1063/1.1653926 (3 pages) | Cited 12 times

Online Publication Date: 22 October 2003

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Ion implantation into epitaxial films of certain magnetic garnets grown on nonmagnetic substrates has produced layers with uniaxial anisotropy suitable for magnetic ``bubble'' formation and propagation. Implantation of hydrogen or lithium ions causes the garnet lattice to expand and the constraint of the unimplanted material places the implanted layer in lateral compression. In garnets with positive magnetostriction, this stress results in an induced easy axis of magnetization perpendicular to the surface. Helium‐ion implantation does not cause lattice expansion or induce magnetic anisotropy. This suggests that the phenomenon is due to a chemical effect rather than lattice damage.

Temperature Measurements of Plasmas Produced by Laser Pulses in Gas Jets

H. J. Neusser, H. Puell, and W. Kaiser

Appl. Phys. Lett. 19, 300 (1971); http://dx.doi.org/10.1063/1.1653927 (3 pages) | Cited 6 times

Online Publication Date: 22 October 2003

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Laser‐produced plasmas generated in a freely expanding N2 gas jet of high density are investigated experimentally. Measured values for the electron temperature and the time of light‐plasma interaction are presented as a function of the incident light power. The results are compared with existing theories.

Optical Gain in Lightly Doped GaAs

K. L. Shaklee, R. F. Leheny, and R. E. Nahory

Appl. Phys. Lett. 19, 302 (1971); http://dx.doi.org/10.1063/1.1653928 (4 pages) | Cited 27 times

Online Publication Date: 22 October 2003

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Measurements of both small‐signal gain and stimulated emission spectra for optically pumped GaAs are described. Saturation of the amplification process is shown to play an important role in determining the spectral distribution of the stimulated emission. These measurements indicate that intrinsic gain in high‐purity material does not result from band‐to‐band recombination and in its place an interpretation in terms of free‐exciton radiative Auger recombination is suggested.

Superconducting Properties of Niobium Carbonitride Thin Films

J. R. Gavaler, M. A. Janocko, and C. K. Jones

Appl. Phys. Lett. 19, 305 (1971); http://dx.doi.org/10.1063/1.1653929 (3 pages) | Cited 6 times

Online Publication Date: 22 October 2003

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A method for preparing thin films of nominal composition NbC0.3N0.7 is reported. Maximum transition temperatures of 17.3 °K are obtained for films deposited at ∼700 °C. However, higher critical currents and critical fields are obtained for films prepared at lower temperatures, even though the Tc's are lower. This effect is attributed to structural differences in the two types of films.
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Erratum: Image‐Converter Streak Camera with Picosecond Resolution

M. Ya. Schelev, M. C. Richardson, and A. J. Alcock

Appl. Phys. Lett. 19, 307 (1971); http://dx.doi.org/10.1063/1.1653930 (1 page)

Online Publication Date: 22 October 2003

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