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1 Nov 1971

Volume 19, Issue 9, pp. 311-368


Punchthrough and the Tunneling Cryotron

T. A. Fulton

Appl. Phys. Lett. 19, 311 (1971); http://dx.doi.org/10.1063/1.1653931 (3 pages) | Cited 9 times

Online Publication Date: 22 October 2003

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The effect of junction capacitance on the behavior of the Josephson tunneling cryotron is considered and certain problems which may arise in high‐speed applications are described.

Radiation Effects Produced by Modulated Electrons

H. J. Lipkin and M. Peshkin

Appl. Phys. Lett. 19, 313 (1971); http://dx.doi.org/10.1063/1.1653932 (3 pages) | Cited 4 times

Online Publication Date: 22 October 2003

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In the experiment of Schwarz and Hora, modulated electrons can radiate substantially more light than unmodulated electrons only if the modulated electron wave function contains many plane‐wave components. The radiated light must be coherent if it is emitted from a one‐electron state or collectively from a product of modulated one‐electron states. These conclusions are independent of the mechanisms of excitation and radiation.

Auger Electron Spectroscopy in the Scanning Electron Microscope: Auger Electron Images

N. C. MacDonald and J. R. Waldrop

Appl. Phys. Lett. 19, 315 (1971); http://dx.doi.org/10.1063/1.1653933 (4 pages) | Cited 32 times

Online Publication Date: 22 October 2003

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A two‐dimensional surface chemical analysis over an area on a metal specimen has been accomplished by means of high‐spatial‐resolution Auger electron spectroscopy in a computerized scanning electron microscope. The experimental results are presented in graphic form by the new method of Auger electron imaging.

Infrared Detection by Schottky Barriers in Epitaxial PbTe

E. M. Logothetis, H. Holloway, A. J. Varga, and E. Wilkes

Appl. Phys. Lett. 19, 318 (1971); http://dx.doi.org/10.1063/1.1653934 (3 pages) | Cited 19 times

Online Publication Date: 22 October 2003

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High‐quality infrared detectors have been made from Pb Schottky barriers on epitaxial PbTe layers. At 77 °K these devices are limited by the 300 °K background at f∕1.7 and attain Johnson noise‐limited peak detectivities [Dλ*(5.5 μm, 600, 1)] of 6×1011 cm Hz1∕2W−1 with further reduction of the background. The diode quantum efficiencies reach 50–60%.

Generation of Far‐Infrared Radiation by Picosecond Light Pulses in LiNbO3

K. H. Yang, P. L. Richards, and Y. R. Shen

Appl. Phys. Lett. 19, 320 (1971); http://dx.doi.org/10.1063/1.1653935 (4 pages) | Cited 52 times

Online Publication Date: 22 October 2003

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We have observed far‐infrared radiation generated by picosecond pulses in LiNbO3 with several different phase‐matching conditions. The output spectra, analyzed by a far‐infrared Michelson interferometer and by a Fabry‐Perot interferometer, agree well with theoretical calculations. The laser pulsewidth deduced from these measurements was about 2 psec in comparison with 5 psec obtained from two‐photon fluorescence measurements.

Observation of Pulsation from a Double‐Heterostructure Injection Laser Due to Lateral Optical Coupling

K. Kobayashi, H. Yonezu, F. Saito, and Y. Nannichi

Appl. Phys. Lett. 19, 323 (1971); http://dx.doi.org/10.1063/1.1653936 (2 pages) | Cited 9 times

Online Publication Date: 22 October 2003

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A new type of pulsation was observed in the output from a (GaAl)As double‐heterostructure injection laser which happened to have two lasing filaments closely located to each other. We observed repetitive pulsed lasing in one filament and corresponding dipping in the other. This pulsation was interpreted to be due to lateral optical coupling between the two filaments.

Focusing of a Light Beam by a Concave Magnetic Domain Wall in Yttrium Orthoferrites

Masakazu Shoji, Richard M. Goldstein, and William J. Tabor

Appl. Phys. Lett. 19, 325 (1971); http://dx.doi.org/10.1063/1.1653937 (2 pages) | Cited 2 times

Online Publication Date: 22 October 2003

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We have observed the convergence of a light beam that has passed through a concave boundary of magnetic domains in orthoferrites. We have developed a simple theory that explains the phenomenon.

Ga1−xAlxAs Produced by Al+ Ion Implantation of GaAs

R. G. Hunsperger and O. J. Marsh

Appl. Phys. Lett. 19, 327 (1971); http://dx.doi.org/10.1063/1.1653938 (3 pages) | Cited 6 times

Online Publication Date: 22 October 2003

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GaAs has been converted to Ga1−xAlxAs by implanting GaAs substrates with 30‐KeV Al+ ions and subsequently annealing at 900 °C. The maximum ion dose used was 2×1016∕cm2, corresponding to a calculated peak concentration of approximately 1022 Al atoms∕cm3. The emission spectra of electroluminescent diodes formed in the material were measured.

Anomalies in the Solubility for Zn in AlxGa1−xAs

D. R. Campbell and K. K. Shih

Appl. Phys. Lett. 19, 330 (1971); http://dx.doi.org/10.1063/1.1653939 (4 pages) | Cited 7 times

Online Publication Date: 22 October 2003

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A comparative study has been made of the solubilities of Zn in AlxGa1−xAs (0.20≤x≤0.37) and GaAs at 700 °C. The use of three diffusion sources (92% Ga‐6% Zn‐2% As, pure Zn, and ZnAs2) provided a range of a factor of 40 in the measured solubility in GaAs. It was found that the solubility in AlxGa1−xAs increased with x for x>0.20 and that at low As4 pressures the solubility in Al0.20Ga0.80As exceeded that in GaAs whereas the reverse was true at high pressures. These findings may indicate the existence of unusually high defect concentrations in AlxGa1−xAs.

Tunable Coherent Radiation Source in the 5‐μ Region

C. R. Pidgeon, B. Lax, R. L. Aggarwal, C. E. Chase, and F. Brown

Appl. Phys. Lett. 19, 333 (1971); http://dx.doi.org/10.1063/1.1653940 (3 pages) | Cited 13 times

Online Publication Date: 22 October 2003

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A tunable coherent radiation source in the 5‐μ region has been obtained by mixing a spin‐flip Raman (SFR) laser with a 10.6‐μ TEA laser. The sum frequency, tunable from 5.47 to 5.79 μ, is obtained by mixing the two beams in a crystal of tellurium oriented at the phase‐match angle. Output peak powers of approximately a few watts are obtained in this wavelength range.

Turn‐On Time Reduction and Contrast Enhancement in Matrix‐Addressed Liquid‐Crystal Light Valves

Peter J. Wild and Jürgen Nehring

Appl. Phys. Lett. 19, 335 (1971); http://dx.doi.org/10.1063/1.1653941 (2 pages) | Cited 9 times

Online Publication Date: 22 October 2003

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A new method of response time reduction and contrast enhancement in matrix‐addressed liquid‐crystal light‐valve arrays is described based on the effect that the threshold for hydrodynamic instability in certain nematic liquid crystals is increased by a superimposed electric field of sufficiently high frequency. The effect is discussed in terms of the Helfrich model.

High D* Pyroelectric Polyvinylfluoride Detectors

Robert J. Phelan, Robert J. Mahler, and Alan R. Cook

Appl. Phys. Lett. 19, 337 (1971); http://dx.doi.org/10.1063/1.1653942 (2 pages) | Cited 37 times

Online Publication Date: 22 October 2003

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Polyvinylfluoride plastic films exhibit a normalized detectivity, D* (500 K, 1, 1), of 3×108 cm Hz1∕2∕W. This value for the infrared‐detector figure of merit is close to the highest available from other pyroelectric materials. A pyroelectric coefficient of 1 nC∕cm2K was obtained from the optical response, and a material figure of merit of 1.3×10−9 C cm∕J was determined.

Two‐Dimensionally Scannable Electron‐Beam‐Pumped Laser

J. R. Packard, W. C. Tait, and G. H. Dierssen

Appl. Phys. Lett. 19, 338 (1971); http://dx.doi.org/10.1063/1.1653943 (3 pages) | Cited 7 times

Online Publication Date: 22 October 2003

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A two‐dimensional scanning laser has been produced by scanning a pumping electron beam across the faces of various II–VI semiconductors. The laser beam emerges coaxial with the electron beam from the excited point on the crystal with a spot size about the same diameter (20 μm) as the electron beam.

Highly Uniform Alx Ga1−x As Double‐Heterostructure Lasers and Their Characteristics at Room Temperature

B. I. Miller, E. Pinkas, I. Hayashi, P. W. Foy, and R. Capik

Appl. Phys. Lett. 19, 340 (1971); http://dx.doi.org/10.1063/1.1653944 (4 pages) | Cited 13 times

Online Publication Date: 22 October 2003

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Highly uniform double‐heterostructure wafers were grown reproducibly by liquid‐phase epitaxy. Thresholds and efficiencies lie within 5% for different lasers from a given wafer. Studies of the effect of dopants in the active region of lasers made from these uniform wafers showed clearly the dependence of gain and loss characteristics upon some doping parameters. External differential quantum efficiencies of 50% were obtained consistently. Peak pulse power of 6 W and cw power of 200 mW were achieved with Fabry‐Perot diodes.

A Two‐Frequency Coincidence Addressing Scheme for Nematic‐Liquid‐Crystal Displays

C. R. Stein and R. A. Kashnow

Appl. Phys. Lett. 19, 343 (1971); http://dx.doi.org/10.1063/1.1653945 (3 pages) | Cited 15 times

Online Publication Date: 22 October 2003

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See Also: Erratum

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We describe a new coincidence addressing plan for nematic‐liquid‐crystal dynamic‐scattering displays which is based on the temporal coincidence of low‐ and high‐frequency electrical signals. The experimental threshold‐voltage condition is in agreement with that calculated from an extension of Helfrich's conduction‐induced alignment model.

Flashlamp‐Pumped Laser Dyes: A Literature Survey

J. T. Warden and Lucille Gough

Appl. Phys. Lett. 19, 345 (1971); http://dx.doi.org/10.1063/1.1653946 (4 pages) | Cited 9 times

Online Publication Date: 22 October 2003

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Fifty‐nine flashlamp‐pumped laser dyes are tabulated with their literature references. Lasing wavelengths and appropriate solvents are given for each dye.

Reproducible Preparation of Homogeneous In1−xGaxP Mixed Crystals

Hiroyuki Itoh, Katsuo Hara, Akira Tanaka, and Tokuzo Sukegawa

Appl. Phys. Lett. 19, 348 (1971); http://dx.doi.org/10.1063/1.1653947 (2 pages) | Cited 4 times

Online Publication Date: 22 October 2003

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A solution‐growth method was developed to obtain highly homogeneous In1−xGaxP mixed crystals. In this method, a GaP crystal was the source material which was placed in the high‐temperature portion of the In solution. An In1−xGaxP mixed crystal of a controlled composition crystallized in the low‐temperature portion of the solution. The temperature of the solution and the vapor pressure of phosphorous were maintained constant in order to obtain mixed crystals of a high homogeneity. An x‐ray analysis showed that the mixed crystals thus prepared were uniform within 0.01‐mole fraction.

A New Technique for the Elemental Analysis of Thin Surface Layers of Solids

J. W. Coburn and Eric Kay

Appl. Phys. Lett. 19, 350 (1971); http://dx.doi.org/10.1063/1.1653948 (3 pages) | Cited 31 times

Online Publication Date: 22 October 2003

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It is shown that the combination of rf glow‐discharge sputtering and mass spectrometry provides a very sensitive method for determining the composition of thin surface layers of solids. The sample is immersed in an rf sputtering glow discharge and a fraction of those sputtered atoms which are ionized in the discharge by Penning ionization are monitored with a quadrupole mass filter. 1011 sputtered atom∕sec can readily be detected and considerable improvement in sensitivity can easily be anticipated. The sensitivity is comparable for all elements except He, Ne, and F and is independent of the matrix in which the species are contained; i.e., standards are not required. The matrix can be electrically insulating or conducting.

A New Resolution Criterion for Long‐Wavelength Holograms

John Dickinson and George Rinard

Appl. Phys. Lett. 19, 352 (1971); http://dx.doi.org/10.1063/1.1653949 (2 pages)

Online Publication Date: 22 October 2003

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A new resolution criterion is described which can be used in long‐wavelength holographic systems. It is called the finest‐fringe criterion.

Surface Chemical Analysis by Auger Electron Spectroscopy and Appearance Potential Spectroscopy: A Comparison

J. C. Tracy

Appl. Phys. Lett. 19, 353 (1971); http://dx.doi.org/10.1063/1.1653950 (4 pages) | Cited 8 times

Online Publication Date: 22 October 2003

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By direct comparison it is shown that Auger electron spectroscopy (AES) is more sensitive than appearance potential spectroscopy (APS) for the detection of S, C, and O on a Ti film. Similar combined studies of a number of clean films reveal that APS is about equally sensitive to Cr, Ti, Fe, and Ni, but is unable to detect Cu, Ag, or GaAs under the present conditions. The sensitivity of AES to all these materials in bulk form is the same within a factor of 5.

Nondestructive Testing of Thin Films by Harmonic Generation of Dispersive Rayleigh Waves

E. G. Lean and C. G. Powell

Appl. Phys. Lett. 19, 356 (1971); http://dx.doi.org/10.1063/1.1653951 (4 pages) | Cited 29 times

Online Publication Date: 22 October 2003

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A new and sensitive measurement technique of determining elastic properties of a thin film on a substrate based on harmonic generation of dispersive Rayleigh waves is demonstrated. The technique has a sensitivity of detecting a change of 0.001% in velocity due to the loading of the thin film. A damaged layer of about 20 Å on a mechanically polished LiNbO3 substrate is detectable.

Polarization Effects in Holography

Hiroshi Okayama and Yasufumi Emori

Appl. Phys. Lett. 19, 359 (1971); http://dx.doi.org/10.1063/1.1653952 (2 pages) | Cited 1 time

Online Publication Date: 22 October 2003

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The polarization characteristics of phase holograms are obtained in various spatial frequencies. These characteristics are evaluated by measurements of the diffraction efficiencies for the reconstructing beam, whose electric vector is parallel and perpendicular to the plane containing the reference and object beams, respectively.

Growth of Uniaxial Magnetic Garnet Films by a Simplified Method of Chemical Vapor Deposition

R. C. Taylor and V. Sadagopan

Appl. Phys. Lett. 19, 361 (1971); http://dx.doi.org/10.1063/1.1653953 (3 pages) | Cited 8 times

Online Publication Date: 22 October 2003

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Epitaxial films of gallium‐substituted yttrium iron garnet displaying magnetic domains have been grown on gadolinium gallium garnet and mixed gadolinium dysprosium gallium garnet substrates. The films grown on Dy: GGG were crack‐free. A chemical‐vapor‐deposition (CVD) system using metal source materials and a simplified geometry was developed. Investigations were made of several different types of growth which occurred and of the efficiency of HCl transport. Results of these studies, as well as magnetic properties of the films and a description of the CVD system and growth conditions, are presented.

Characteristics of Ovonic Threshold Switches with Crystalline Semiconductor Electrodes

H. K. Henisch and G. J. Vendura

Appl. Phys. Lett. 19, 363 (1971); http://dx.doi.org/10.1063/1.1653954 (3 pages) | Cited 10 times

Online Publication Date: 22 October 2003

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The letter describes asymmetric threshold‐switching phenomena observed on thin films of Te40As37Ge7Si18 (0.2–1.9 μ), deposited by flash evaporation on crystalline Ge, and surface probed by means of a pyrolytic graphite counterelectrode. ``Dynamically tristable'' systems can be made in this way. The asymmetries are reversed for n‐ and p‐type Ge. Suitably biased systems can be switched by illumination. The differences between the present results and those obtained on conventional threshold switches with two graphite electrodes call for an interpretation in terms of electronic‐interface phenomena.

Visible Stimulated Emission in Ternary Chalcopyrite Sulfides and Selenides

J. L. Shay, B. Tell, and H. M. Kasper

Appl. Phys. Lett. 19, 366 (1971); http://dx.doi.org/10.1063/1.1653955 (3 pages) | Cited 34 times

Online Publication Date: 22 October 2003

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We report the observation of stimulated emission in four I‐III‐VI2 chalcopyrite sulfides and selenides AgGaS2, CuGaS2, AgGaSe2, and CuInS2 spanning the visible spectrum from 4650 to 8200 Å. CuGaS2 and CuInS2 can readily be prepared p type, and p‐n junctions have been formed in CuInS2.
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