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1 Jan 1972

Volume 20, Issue 1, pp. 1-51


Variations in Electrical Properties of Silicon Films on Sapphire Using the MOS Hall Technique

A. C. Ipri

Appl. Phys. Lett. 20, 1 (1972); http://dx.doi.org/10.1063/1.1653956 (2 pages) | Cited 20 times

Online Publication Date: 22 October 2003

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An experimental technique is described for determining the electrical properties of thin semiconducting films as a function of distance from the surface. The method is applied to silicon on sapphire films nominally 1 μ thick and doped ``n'' type on the order of (2–6)×1016∕cm3, and the variation in average mobility and carrier concentration with depth into the layer is determined.

Spectral Investigation of Light Reflected from a Laser‐Produced Deuterium Plasma

K. Büchl, K. Eidmann, H. Salzmann, and R. Sigel

Appl. Phys. Lett. 20, 3 (1972); http://dx.doi.org/10.1063/1.1653966 (2 pages) | Cited 8 times

Online Publication Date: 22 October 2003

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Plasma is created from solid deuterium targets by neodymium laser irradiation. The reflected laser light is shifted by 2.5 Å towards longer wavelengths. This is interpreted as a Doppler shift of the laser light reflected at a layer moving in the direction of the incident radiation with a velocity of 3.5×106 cm sec−1.

Electron‐Emission Images on LiF After Exposure to Intense Laser Light

P. Bräunlich

Appl. Phys. Lett. 20, 4 (1972); http://dx.doi.org/10.1063/1.1653972 (3 pages) | Cited 3 times

Online Publication Date: 22 October 2003

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The observation of thermally stimulated emission of low‐energy electrons (TSEE) from LiF single crystals that had been subjected to intense pulses of light from a Nd‐glass laser is reported. TSEE images of the surface are obtained with the aid of an array of Channeltron electron multipliers. Correlations between image features and laser surface damage have been discovered that suggest the utilization of the TSEE image technique for nondestructive testing of optical surfaces with respect to their laser surface‐damage threshold.

Peak Voltage of the Pyroelectric Response to Short Infrared Laser Pulses

A. Shaulov and M. Simhony

Appl. Phys. Lett. 20, 6 (1972); http://dx.doi.org/10.1063/1.1653978 (2 pages) | Cited 6 times

Online Publication Date: 22 October 2003

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The peak voltage of the response in a pyroelectric sample to ir signals much shorter than the thermal and electronic time constants of the sample is shown to be proportional to the energy absorbed per signal, and independent of load resistance and signal repetition frequency, as long as temperature is far enough from the Curie point. These results were checked experimentally in triglycine sulphate and strontium‐barium niobate.

Electrostatic Instabilities of a Mirror‐Confined Plasma with Anisotropic Velocity Distribution

Akira Hasegawa and Katsunobu Nishihara

Appl. Phys. Lett. 20, 8 (1972); http://dx.doi.org/10.1063/1.1653979 (2 pages) | Cited 1 time

Online Publication Date: 22 October 2003

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Electrostatic instabilities associated with the bounce frequency are studied for a mirror‐confined plasma. A plasma with a monochromatic energy distribution perpendicular to the magnetic field is shown to introduce a new mode at ω∼nωb which is unstable when ωp/ωb≳0(1), where ωb and ωp are the bounce and plasma frequencies, respectively.

Transient Phenomena of the Light‐Induced Memory in Amorphous Semiconductor Films

A. Hamada, T. Kurosu, M. Saito, and M. Kikuchi

Appl. Phys. Lett. 20, 9 (1972); http://dx.doi.org/10.1063/1.1653980 (3 pages) | Cited 8 times

Online Publication Date: 22 October 2003

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Transient phenomena of write‐in and erasing processes of the light‐induced memory in Te81Ge15Sb2S2 films were observed by the transmission mode using a He☒Cd laser. Crystallization was completed in 50 μsec under illumination, which supports the photon‐enhanced crystallization.

In1−x Gax P:N Laser Operation (cw, 77°K) on the Nitrogen A‐Line Transition in Indirect Crystals (x ≥ 0.74) and in Direct Crystals above the Fundamental Band Edge (x ≥ 0.71)

N. Holonyak, D. R. Scifres, H. M. Macksey, and R. D. Dupuis

Appl. Phys. Lett. 20, 11 (1972); http://dx.doi.org/10.1063/1.1653957 (4 pages) | Cited 12 times

Online Publication Date: 22 October 2003

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The laser operation (cw, 77°K) of In1−xGaxP on the nitrogen A‐line transition in indirect crystals (x≥0.74) and in direct crystals above the fundamental band edge (x≤0.71) is reported (5450 and 5470 Å, respectively). Thin (1–5 μ) experimental samples are prepared from crystals grown from In solution by a modified Bridgman method. The crystals are doped with GaN or N from the quartz of the synthesis ampoule. The samples are mounted in a sandwich configuration with indium wetted onto a copper heat sink on one side and thin CdS (10–20 μ) and sapphire on the other side. The thin samples are volume excited in a tiny spot by an argon‐ion laser focused through the sapphire window and the CdS spacer which, with the sample, forms a high‐Q compound cavity.

Photomechanical Effect in Noncentrosymmetric Semiconductors‐CdS

J. Lagowski and H. C. Gatos

Appl. Phys. Lett. 20, 14 (1972); http://dx.doi.org/10.1063/1.1653958 (3 pages) | Cited 7 times

Online Publication Date: 22 October 2003

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A new phenomenon is reported whereby illumination (in the visible spectrum) is converted into mechanical strain (elastic deformation or mechanical vibrations) in CdS wafers with an orientation perpendicular to the crystallographic axis [001]. It is believed that the light modulates the electric field at the surface (surface barrier) and causes an elastic strain due to the converse piezoelectric effect.

Phonon and Polariton Modes in a Superlattice

R. Tsu and Sudhanshu S. Jha

Appl. Phys. Lett. 20, 16 (1972); http://dx.doi.org/10.1063/1.1653959 (3 pages) | Cited 29 times

Online Publication Date: 22 October 2003

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Calculations of the dispersion of phonons and polaritons in a superlattice show that the frequencies of the phonon and polariton modes may be prescribed by proper design. These modes may be useful as Raman source and Reststrahlen filters.

Two‐Photon Absorption and Photoconductivity in GaAs and InP

C. C. Lee and H. Y. Fan

Appl. Phys. Lett. 20, 18 (1972); http://dx.doi.org/10.1063/1.1653960 (3 pages) | Cited 28 times

Online Publication Date: 22 October 2003

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Absorption and photoconductivity in GaAs and InP have been studied as functions of light intensity I up to 20 MW∕cm2 at 1.06 μ. The two‐photon‐absorption coefficient is determined to be ≈ 0.3I cm−1 for n‐GaAs and ≈ 0.2I cm−1 for n‐InP. These values are much larger than that predicted by the existing theories. For the n‐InP samples, the absorption by the two‐photon‐excited free carriers is found to be important, giving an absorption coefficient of ≈ 0.15I2 cm−1. From the photoconductivity measurements, the concentration and the absorption cross section of holes are determined.

Avalanche Breakdown and Associated Light Emission in Molecular Crystals

S. T. Hsu

Appl. Phys. Lett. 20, 20 (1972); http://dx.doi.org/10.1063/1.1653961 (2 pages) | Cited 3 times

Online Publication Date: 22 October 2003

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High‐field‐induced breakdown associated with light emission in anthracene crystals has been observed. The color of the emitted light is light blue in the 4000–4500‐Å spectral region. The breakdown is identified as avalanche breakdown. The emitted light is due to radiative electron‐hole recombinations.

Nonlinear Optical Susceptibility of 5‐Nitrouracil

J. G. Bergman, G. R. Crane, B. F. Levine, and C. G. Bethea

Appl. Phys. Lett. 20, 21 (1972); http://dx.doi.org/10.1063/1.1653962 (3 pages) | Cited 26 times

Online Publication Date: 22 October 2003

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Nonlinear optical measurements show 5‐nitrouracil (5NU) to be phase matchable with a co‐efficient approximately equal to that of lithium iodate [d36(5NU) = (1.0 ± 0.2)d33(LiIO3)]. The large optical nonlinearity is attributed to a highly acentric molecular distribution of non‐σ‐bonded electrons. Air‐stable nonoptically damageable single crystals were grown from an aqueous solution. X‐ray results show the material to crystallize in the orthorhombic space group P212121 containing four molecules per unit cell of dimensions a0 = 9.94 ± 0.03 Å, b0 = 10.30 ± 0.03 Å, and c0 = 5.47 ± 0.02 Å. The crystals are transparent from 1.5 to 0.5 μ.

Structure of a Laser‐Channeled Gas‐Embedded z Pinch

D. A. Tidman

Appl. Phys. Lett. 20, 23 (1972); http://dx.doi.org/10.1063/1.1653963 (3 pages) | Cited 10 times

Online Publication Date: 22 October 2003

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The structure of a proposed several‐megaamperes discharge created along a narrow filament of laser‐produced ionization through a high‐density deuterium‐tritium gas mixture is discussed. This initiation technique provides a convenient method for creating long straight gas‐embedded z pinches (or screw pinches if a Bz is included) which may be of thermo‐nuclear interest.

Gain Saturation in High‐Resistivity Si:B Photoconductors

M. M. Blouke and R. L. Williams

Appl. Phys. Lett. 20, 25 (1972); http://dx.doi.org/10.1063/1.1653964 (3 pages)

Online Publication Date: 22 October 2003

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Detailed observation of the photoconductive gain saturation in high‐resistivity Si:B samples is reported. The calculated saturated gain of 0.52 agrees well with the theoretical prediction of Gsat = ☒. These measurements strongly suggest that this phenomenon is a general characteristic of all high‐impedance extrinsic photoconductors.

Subtractive Microwave Holography and Its Application to Plasma Studies

Keigo Iizuka

Appl. Phys. Lett. 20, 27 (1972); http://dx.doi.org/10.1063/1.1653965 (3 pages) | Cited 2 times

Online Publication Date: 22 October 2003

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A subtractive‐microwave‐holographic technique is described in this letter. This technique appears to be novel in that it displays only the difference of the two dissimilar microwave fields. The effect is achieved by making use of the phase reversal which occurs when a contact print is made of the microwave hologram. The technique was demonstrated by subtracting the microwave image of a coin from that of three coins. To show the practicability of the technique, it was applied to the diagnosis of a plasma discharge. The fact that this method can eliminate the masking effects scattered by the glass envelope and its supports is a substantial improvement over other microwave diagnostic tools.

Channeling of Phosphorous Ions in Silicon

V. G. K. Reddi and J. D. Sansbury

Appl. Phys. Lett. 20, 30 (1972); http://dx.doi.org/10.1063/1.1653967 (2 pages) | Cited 4 times

Online Publication Date: 22 October 2003

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Profiles of channeled 31P ions over the energy range 30–600 keV have been measured in 〈100〉, 〈111〉, and 〈110〉 Si. The maximum range Rmax of the channeled ions is nearly the same for the 〈100〉 and 〈111〉 directions and is significantly greater for the 〈110〉 direction.

Differential Negative Resistance of n‐Type Inversion Layer in Silicon MOS Field‐Effect Transistor

Y. Katayama, I. Yoshida, N. Kotera, and K. F. Komatsubara

Appl. Phys. Lett. 20, 31 (1972); http://dx.doi.org/10.1063/1.1653968 (3 pages) | Cited 8 times

Online Publication Date: 22 October 2003

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A new type of voltage‐controlled differential‐negative‐resistance effect was observed in an n‐type surface inversion layer of a silicon MOS field‐effect transistor with a very high mobility of 104 cm2∕V sec at low temperatures.

Reliable Operation of a Proustite Parametric Oscillator

D. C. Hanna, B. Luther‐Davies, H. N. Rutt, and R. C. Smith

Appl. Phys. Lett. 20, 34 (1972); http://dx.doi.org/10.1063/1.1653969 (3 pages) | Cited 13 times

Online Publication Date: 22 October 2003

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An infrared parametric oscillator using proustite and pumped at 1.065 μm has been operated with peak output powers in the kilowatt range. No significant deterioration of output power was observed after several hours of running at 2 pps. Tuning from 1.82 to 2.56 μm was obtained, limited only by the reflectivity limits of the mirrors used. With careful design, DRO proustite oscillators covering the entire range 1.2–9.5 μm now appear feasible.

Efficient GaAs☒AlxGa1−xAs Double‐Heterostructure Light Modulators

F. K. Reinhart and B. I. Miller

Appl. Phys. Lett. 20, 36 (1972); http://dx.doi.org/10.1063/1.1653970 (3 pages) | Cited 24 times

Online Publication Date: 22 October 2003

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Properly designed GaAs☒AlxGa1−xAs double heterostructures produce strong optical waveguides. The propagation constants of the waveguide modes can be readily modulated by the linear electro‐optic effect. Measurements at a wavelength λ = 1.153 μm have yielded a phase modulation of 180° with ‐10 V applied bias to a device only 1 mm long. The power necessary to phase modulate light at λ ≈ 1 μm by 1 rad is of the order of 0.1 mW per 1‐MHz band‐width. The power dissipation is very strongly dependent on wavelength. At present, the high‐frequency modulation is limited by the series resistance and capacitance of the device. The highest cutoff frequency determined thus far, ≈ 4 GHz, is considerably lower than that calculated based on the geometry and material properties.

Unidirectional Thin‐Film Ring Laser

R. Ulrich and H. P. Weber

Appl. Phys. Lett. 20, 38 (1972); http://dx.doi.org/10.1063/1.1653971 (3 pages) | Cited 7 times

Online Publication Date: 22 October 2003

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A light‐guiding thin polyurethane film, doped with rhodamine 6G, is coated on the surface of a cylindrical glass rod and pumped with a pulsed Ne laser. A prism‐film coupler produces two output beams corresponding to clockwise and counterclockwise oscillations around the circumference of the rod. Unidirectional operation is obtained when one of the output beams is reflected back into itself. A maximum directionality ratio of 17 was measured.

Growth‐Induced Magnetic Anisotropy in Epitaxial Garnet Films

A. Rosencwaig and W. J. Tabor

Appl. Phys. Lett. 20, 40 (1972); http://dx.doi.org/10.1063/1.1653973 (3 pages) | Cited 3 times

Online Publication Date: 22 October 2003

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Using the models established for the growth‐induced anistropy in flux‐grown crystals and parameters determined from anisotropy measurements in bulk crystals, the anisotropy in epitaxial films is predicted. Comparison with experiment shows that the signs of the anisotropy are correctly predicted and that magnitudes are in fair agreement.

Excited‐State Effects in Nonlinear Infrared Absorption by Ethylene

N. W. Ressler and R. W. Crain

Appl. Phys. Lett. 20, 42 (1972); http://dx.doi.org/10.1063/1.1653974 (3 pages) | Cited 4 times

Online Publication Date: 22 October 2003

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This letter reports measurements of the intensity‐dependent transmittance of ethylene near 949 cm−1. The qualitatively different behavior of transmittance for the CO2 laser lines P(12) and P(16), which are nearly symmetrically located on opposite sides of the ground‐state resonance, is described in terms of a 3‐level model with an anharmonic frequency shift in the excited‐state resonance. The results are also compared to the predicted intensity‐dependent transmittance for a 2‐level model.

Parametric Image Upconversion of 10.6‐μm Illuminated Objects

Walter C. Chiou and Frank P. Pace

Appl. Phys. Lett. 20, 44 (1972); http://dx.doi.org/10.1063/1.1653975 (4 pages) | Cited 15 times

Online Publication Date: 22 October 2003

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Images at 0.96 μm of 10.6‐μm illuminated objects were obtained by the parametric image upconversion technique. The nonlinear material used in this experiment was a single crystal of proustite pumped by 1.06‐μm radiation from a single‐mode Nd:YAG laser. Angular resolution of about 3 mrad and a 12‐deg field of view were obtained. The upconverter was operated in a Fourier‐space configuration and gave nearly diffraction‐limited performance.

Optically Erasable and Rewritable Solid‐State Holograms

T. K. Gaylord, T.A. Rabson, and F. K. Tittel

Appl. Phys. Lett. 20, 47 (1972); http://dx.doi.org/10.1063/1.1653976 (3 pages) | Cited 3 times

Online Publication Date: 22 October 2003

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Optical holographic storage in single‐crystal LiNbO3 is described which can be optically erased at room temperature and then rewritten with no degradation in efficiency or writing rate. The diffraction efficiencies associated with this process are about 10−4. Some variations from previously reported results include a lack of a threshold power density for writing, very‐long‐term persistence of the stored hologram, and a lack of a dependence of the diffracted intensity on the polarization of the readout beam.

A New Ferroelectric: Semicarbazide Hydrochloride

J.‐C. Rocaries and P. Boldrini

Appl. Phys. Lett. 20, 49 (1972); http://dx.doi.org/10.1063/1.1653977 (3 pages) | Cited 7 times

Online Publication Date: 22 October 2003

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Dielectric measurements on a single crystal of semicarbazide hydrochloride show three maxima at temperatures of −230, 19, and 21 °C. Initial data for the highest peak clearly suggest a ferroelectric‐paraelectric transition with a Curie temperature of 21 °C. In the paraelectric region the Curie law is well followed.
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