APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

15 Jan 1972

Volume 20, Issue 2, pp. 53-99


Field Regions for the Modes of Acousto‐electric Excitations in InSb

F. Seifert, H. Bauder, and C. Schatzl

Appl. Phys. Lett. 20, 53 (1972); http://dx.doi.org/10.1063/1.1654042 (3 pages) | Cited 1 time

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
It is shown that in n‐InSb at 77 K, mode I of acousto‐electric excitation exists in transverse magnetic fields above 2 kG, for which qR≪ 1 (q is the acoustical wave number, and R is the Larmor radius) if the drift motion restores a mean free path l to give ql > 1. Threshold curves for mode I are calculated. Allowing for the magnetic field dependence of mobility, the applicability of quantum‐mechanical and hydrodynamical theory in different field regions is discussed.

Tunneling Measurements of the Superconducting Energy Gap of Bulk Polycrystalline Indium

R. F. Averill, L. S. Straus, and W. D. Gregory

Appl. Phys. Lett. 20, 55 (1972); http://dx.doi.org/10.1063/1.1654043 (2 pages) | Cited 2 times

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
A successful new technique for the fabrication of bulk indium tunnel junctions, In (bulk) ‐ Al2O3☒Pb, has been developed and was used to determine the value of the reduced energy gap as 2Δ(0) ∕kTc = 3.58 for bulk polycrystalline indium.

Electron‐Beam‐Controlled Electrical Discharge as a Method of Pumping Large Volumes of CO2 Laser Media at High Pressure

C. A. Fenstermacher, M. J. Nutter, W. T. Leland, and K. Boyer

Appl. Phys. Lett. 20, 56 (1972); http://dx.doi.org/10.1063/1.1654044 (5 pages) | Cited 81 times

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
An electron‐beam‐controlled discharge has been used to pump a variety of CO2 laser gas mixtures at atmospheric pressure in substantial volumes. Electrical and laser properties of the pumped medium have been measured. Small‐signal‐gain coefficients up to 0.045 cm−1 were achieved at field strengths of 3 kV∕cm.

Switching Behavior of Over‐Critically Doped Gunn Diodes

P. Guéret and M. Reiser

Appl. Phys. Lett. 20, 60 (1972); http://dx.doi.org/10.1063/1.1654045 (3 pages) | Cited 6 times

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
A study is made of Gunn‐diode behavior for various lengths and doping densities. Emphasis is placed mainly on very short over‐critically doped diodes. Such diodes, when biased above threshold, are stable with a high‐field anode layer. The transition to this stable state occurs with or without the intermediary formation of Gunn domains. The relations between the various types of diode behavior and the nature of the small‐signal instability, convective or absolute, in the material is examined.

Raman Oscillation in Glass Optical Waveguide

R. H. Stolen, E. P. Ippen, and A. R. Tynes

Appl. Phys. Lett. 20, 62 (1972); http://dx.doi.org/10.1063/1.1654046 (3 pages) | Cited 121 times

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
Stimulated Raman emission in the visible has been observed in glass‐fiber optical waveguides. Even though the Raman cross section is quite small, relatively low threshold for Raman emission can be achieved because high optical power densities are maintained over long lengths of waveguide. The broad stimulated gain bandwidths available in glass should permit the construction of wide‐band fiber amplifiers and Raman oscillators tunable over a range of 100 Å.

Atmospheric‐Pressure Pulsed Chemical Laser

J. Wilson and J. S. Stephenson

Appl. Phys. Lett. 20, 64 (1972); http://dx.doi.org/10.1063/1.1654047 (3 pages) | Cited 5 times

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
A pulsed chemical laser using the reaction between fluorine and hydrogen or deuterium is described. The reactants are mixed at a pressure which is above the second explosion limit, and reaction is initiated by photolytic dissociation of the fluorine. Laser pulse energies of 96 mJ were achieved from hydrogen fluoride, and 350 mJ from carbon dioxide which acquires vibrational energy by transfer from deuterium fluoride. These pulse energies are lower than expected theoretically.

Optical‐Waveguide Mode‐Conversion Experiments

Manhar Shah, John D. Crow, and Shyh Wang

Appl. Phys. Lett. 20, 66 (1972); http://dx.doi.org/10.1063/1.1654048 (4 pages) | Cited 10 times

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
The results of two experiments utilizing crystalline quartz as the substrate of a thin‐film optical waveguide are presented. TE ⇌ TM mode conversion is demonstrated and shown to be due to the anisotropic nature of quartz. Using experimentally measured parameters in the previously reported analysis, we find good agreement between the theory and experiment.

Far‐Infrared Cyclotron Resonance in GaAs

T. O. Poehler

Appl. Phys. Lett. 20, 69 (1972); http://dx.doi.org/10.1063/1.1654049 (2 pages) | Cited 5 times

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
Cyclotron‐resonance lines in n‐type GaAs at 4.2°K are observed to be anomalously narrow when measured at λ = 220 μm. Analysis of the resonance line yields an effective mass ratio of 0.068m0 and an electron‐impurity scattering time of 3.9×10−12 sec compared to a dc scattering time of 4×10−15 sec.
FREE

Comment on ``0.2‐W Repetitively Pulsed Flashlamp‐Pumped Dye Laser''

W. Schmidt and N. Wittekindt

Appl. Phys. Lett. 20, 71 (1972); http://dx.doi.org/10.1063/1.1654050 (1 page) | Cited 9 times

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
Average output powers of 3.5 W (broadband emission, 890‐W pumping power) and 0.2 W (bandwidth 1.5×10−2 Å, 250‐W pumping power) were obtained from repetitively pulsed flashlamp‐pumped rhodamine 6G lasers.

Electrical and Optical Properties of rf‐Sputtered GaN and InN

H. J. Hovel and J. J. Cuomo

Appl. Phys. Lett. 20, 71 (1972); http://dx.doi.org/10.1063/1.1654051 (3 pages) | Cited 37 times

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
GaN and InN thin films were grown on sapphire, silicon, and metallic substrates using rf sputtering at temperatures of 25–750°C and presputtering vacuum of 10−8 Torr. The GaN films were high in resistivity (> 108 Ω cm), but the InN layers were highly conducting with an electron concentration of 7×1018 cm−3. The refractive index for GaN ranged from 2.1 to 2.4 at long wavelengths and was dispersive below 8000 Å; the index for InN is higher, 2.9. The absorption coefficient was measured from wavelengths of 2 μ to 2000 Å.

Effects of Al Films on Ion‐Implanted Si

D. H. Lee, R. R. Hart, and O. J. Marsh

Appl. Phys. Lett. 20, 73 (1972); http://dx.doi.org/10.1063/1.1654052 (3 pages) | Cited 15 times

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
Ion‐implanted amorphous regions of Si in the presence of Al films 300–700 Å thick are found to recrystallize between 325 and 350°C. This recrystallization occurs at a temperature significantly below both the epitaxial regrowth of the amorphous Si (∼ 600°C) and the Al☒Si eutectic of 577°C. In the case of the 300‐Å metallizations, the enhanced low‐temperature reordering of the damaged layer is simultaneously accompanied by an interfacial migration which results in Si transport to the surface of the sample. The observed phenomena are analyzed as a function of anneal temperature by 280‐keV α‐particle backscattering and 1.8–6.2‐eV optical reflectance measurements.

Enhanced Migration of Implanted Sb and In in Si Covered with Evaporated Al

R. R. Hart, D. H. Lee, and O. J. Marsh

Appl. Phys. Lett. 20, 76 (1972); http://dx.doi.org/10.1063/1.1654053 (2 pages) | Cited 9 times

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
Amorphous layers of Si produced by the bombardment of Sb+ and In+ and covered with ∼400 Å of Al show pronounced migration of the implanted atoms to the Si☒Al interface and the Al surface after a 350°C anneal. This enhanced migration occurs simultaneously with the recrystallization of the amorphous layer. Low‐temperature migration effects are not seen in uncoated amorphous Si, nor on reordered Si covered with evaporated Al. The depth distribution of the implanted atoms is measured by backscattering analysis with 280‐keV α particles.

Transverse‐Discharge Hydrogen Halide Lasers

O.R. Wood and T.Y. Chang

Appl. Phys. Lett. 20, 77 (1972); http://dx.doi.org/10.1063/1.1654054 (3 pages) | Cited 29 times

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
Laser action has been achieved in six hydrogen and deuterium halides formed in chemical reactions initiated by a pulsed transverse discharge. A total of 246 wavelengths from 2.6 to 19.7 μm was observed. Nearly 30% of these transitions have not been previously observed in laser action. All of the lasers operate at relatively high pressure and promise to give very‐high‐power outputs.

Electrical Control of Fixation and Erasure of Holographic Patterns in Ferroelectric Materials

F. Micheron and G. Bismuth

Appl. Phys. Lett. 20, 79 (1972); http://dx.doi.org/10.1063/1.1654055 (3 pages) | Cited 102 times

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
We have demonstrated that fixation and erasure of phase holograms in ferroelectric materials can be achieved by fast electrical control. High ionic mobility that allows the change of the electronic pattern into a stable ionic one is obtained by applying, during 0.1 sec, an external field slightly smaller than the coercive field to the crystal. Erasure is accomplished in 3 sec by applying a field that causes saturation of the polarization. Investigation of this process was carried out in BaTio3 crystals doped with Fe.

Investigation of Lithium Precipitation in Germanium Crystals by X‐Ray Transmission Topography

A.J.R. de Kock, F.M. Beeftink, and K.J. Schell

Appl. Phys. Lett. 20, 81 (1972); http://dx.doi.org/10.1063/1.1654056 (3 pages) | Cited 1 time

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
Lithium precipitation in Czochralski‐grown germanium crystals is investigated by x‐ray transmission topography. Precipitation on dislocations is detected. Striated distributions of precipitates in dislocation‐free crystals are attributed to lithium nucleation on vacancy clusters.

Laser‐Triggered Avalanche‐Transistor Voltage Generator for a Picosecond Streak Camera

S. W. Thomas and L. W. Coleman

Appl. Phys. Lett. 20, 83 (1972); http://dx.doi.org/10.1063/1.1654057 (2 pages) | Cited 6 times

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
Direct optical triggering of an avalanche transistor with a short laser pulse has been demonstrated. In some applications this system provides a compact low‐jitter replacement for a laser‐triggered spark gap. The technique has been applied to generating the gating and sweep voltages in a picosecond streak camera for laser pulse diagnostics where it eliminates the need for multiple beam splitters and long delays. The ``trigger'' avalanche transistor was placed as one of a series string of avalanche transistors. A portion of the switched‐out laser pulse to be diagnosed was focused onto the trigger transistor chip. Nanosecond‐rise kilovolt waveforms are thus generated with time jitter of the entire system being less than 100 psec.

Optically Pumped Room‐Temperature InxGa1−xAs Lasers

J. A. Rossi, S. R. Chinn, and A. Mooradian

Appl. Phys. Lett. 20, 84 (1972); http://dx.doi.org/10.1063/1.1654058 (3 pages) | Cited 8 times

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
Several compositions of InxGa1−xAs have been operated as optically pumped lasers at room temperature. Coherent emission has been observed out to 1.12 μm, corresponding to an alloy composition of x ≃ 0.20. Typical total‐power‐conversion efficiencies are measured to be 0.6%.

Neutron Damage in SiC Light‐Emitting Diodes

C. E. Barnes

Appl. Phys. Lett. 20, 86 (1972); http://dx.doi.org/10.1063/1.1654059 (3 pages) | Cited 7 times

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
The effects of neutron irradiation on silicon carbide light‐emitting diodes (LED's) have been studied over the temperature range 76–300°K. The results indicate that over the entire temperature range the radiative current in the low‐voltage region is due to tunneling and subsequent radiative recombination in the depletion layer. Since this type of current is fairly radiation resistant, it is suggested that the SiC LED is an attractive device for operation in a neutron environment.

Elastic and Anelastic Behavior of Ion‐Implanted Silicon

S. I. Tan, B. S. Berry, and B. L. Crowder

Appl. Phys. Lett. 20, 88 (1972); http://dx.doi.org/10.1063/1.1654060 (3 pages) | Cited 42 times

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
Ion‐implantation damage has been studied in thin reeds of silicon by resonant‐frequency and internal‐friction measurements. For a dose of 1016∕cm2 of 28Si+, the principal effects are the appearance of an internal‐friction peak and a decrease in the flexural vibration frequencies. The amorphous surface layer produced by implantation is deduced to have a Young's modulus of 1.24×1012 dyn∕cm2 and a density of 0.95 of the crystal density. The internal stress in the amorphous layer has been measured and found to be far smaller than that corresponding to a purely elastic accommodation of the density change.

Ion‐Channeling Studies of Epitaxial Layers

S. T. Picraux

Appl. Phys. Lett. 20, 91 (1972); http://dx.doi.org/10.1063/1.1654061 (3 pages) | Cited 20 times

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
Depth and temperature dependences of ion channeling were used to characterize 1–4‐μm Si layers on spinel substrates (Al2O3 ⋅ MgO). Profiles of the density of crystal imperfections in the Si layers have been calculated from the channeling spectra. The imperfections are greatest near the interface, and the crystalline quality improves significantly with increasing distance from the interface. This technique is particularly applicable to heteroepitaxial layers containing high densities of crystal imperfections and can be used to monitor the relative influence of growth parameters on the crystalline quality of the layers.

Transport and Structural Properties of VO2 Films

Clarence C.Y. Kwan, C.H. Griffiths, and H.K. Eastwood

Appl. Phys. Lett. 20, 93 (1972); http://dx.doi.org/10.1063/1.1654062 (3 pages) | Cited 13 times

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
Transport properties of sputtered VO2 films are shown to be critically dependent on the defect structure of this material. Measured values of thermoelectric power and Hall mobility for films deposited under optimum conditions are comparable to those previously measured on single crystals.

Electron Kinetic Processes in CO Lasers

William L. Nighan

Appl. Phys. Lett. 20, 96 (1972); http://dx.doi.org/10.1063/1.1654063 (4 pages) | Cited 18 times

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
Electron‐energy distributions have been determined for electrically excited CO laser mixtures by numerically solving the Boltzmann equation for conditions typical of electric discharges. Solution of the electron‐energy‐conservation equation using the computed distribution functions reveals that vibrational and electronic excitation of CO, N2, and Xe dominates electron‐energy‐exchange processes for average electron energy in the 1–2‐eV range characteristic of electric discharge conditions. For typical mixtures and discharge conditions, between 30 and 90% of the total electrical power is transferred to CO vibrational levels by direct electron excitation, a result consistent with the high electrical‐optical conversion efficiency of electrically excited CO lasers. In addition, these calculations illuminate the influence of Xe, N2, and vibrationally excited molecules, as regards electron collision processes in CO laser discharges.
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close