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1 Mar 1972

Volume 20, Issue 5, pp. 181-204


Polarized Raman Studies of Anisotropic RbClO3 Crystals by the Immersion Technique

D. M. Hwang and S. A. Solin

Appl. Phys. Lett. 20, 181 (1972); http://dx.doi.org/10.1063/1.1654100 (3 pages) | Cited 5 times

Online Publication Date: 22 October 2003

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Artificial depolarization and anisotropy induced broadening of the Raman spectra recorded in air from small RbClO3 single crystals of extremely poor optical quality can be effectively eliminated by immersion of the sample in an index‐matching fluid. Measurement temperatures as low as − 110°C have been obtained using a commercial cryostat fitted with a specially designed sample support system.

Optically Pumped Volume‐Excited cw Room‐Temperature In1−x Gax P (x ≤ 0.60) Platelet Lasers

D. R. Scifres, N. Holonyak, H. M. Macksey, and R. D. Dupuis

Appl. Phys. Lett. 20, 184 (1972); http://dx.doi.org/10.1063/1.1654101 (3 pages) | Cited 4 times

Online Publication Date: 22 October 2003

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Room‐temperature cw laser operation well into the visible spectrum (λ ∼ 6000 Å) is reported for In1−xGaxP (x ≤ 0.60). Thin (1–5‐μ) experimental samples are compressed into In, under a thick (∼ 250‐μ) high‐index (η > 2. 6) SiC window, with a thin (10–50‐μ) narrow SiC platelet under part of the In1−xGaxP sample. The thin In1−xGaxP samples, in the compound cavity, are volume excited in a small spot with an argon laser so that the heat is easily removed by the SiC windows and nearby In heat sink.

Carrier Recombination and Trapping in Heteroepitaxial Si∕Spinel

C. B. Norris

Appl. Phys. Lett. 20, 187 (1972); http://dx.doi.org/10.1063/1.1654102 (4 pages) | Cited 5 times

Online Publication Date: 22 October 2003

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Measurements of transient conductance in response to 80‐nsec pulses of 4–20‐keV electron irradiation have been used to investigate electrical properties of defects in 2–4‐μ Si films on 〈111〉 MgO⋅Al2O3 spinel. Carrier lifetimes ∼ (2–3) × 10−10 sec are estimated from the conductance change during irradiation. Significant trapping of injected carriers is indicated by the postirradiation conductance decay, which persists beyond 10−5 sec at 300°K and 10−3 sec at 90°K. The time and temperature characteristics of the decay suggest that ionized defects equilibrate by carrier capture over a potential barrier as in neutron‐irradiated silicon. Variable‐energy electron irradiation was used to investigate the depth dependence of defect density, and the results indicate that trapping in Si∕spinel is greater near the substrate inferface.

Critical Velocity and Mass of Domain Walls in Thin Magnetic Films

Ernst Schlömann

Appl. Phys. Lett. 20, 190 (1972); http://dx.doi.org/10.1063/1.1654103 (3 pages) | Cited 8 times

Online Publication Date: 22 October 2003

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The structure of moving domain walls in thin films having a uniaxial anisotropy axis in the plane of the film is calculated by a variational method. The calculation applies for wall velocities ν smaller than a critical velocity at which the derivative of the wall energy with respect to ν becomes infinite. At intermediate film thicknesses the critical velocity is much smaller, the effective wall mass (per unit area) much larger than for bulk crystals and∕or very thin films.

Thermally Stimulated Capacitance (TSCAP) in p‐n Junctions

C. T. Sah, W. W. Chan, H. S. Fu, and J. W. Walker

Appl. Phys. Lett. 20, 193 (1972); http://dx.doi.org/10.1063/1.1654104 (3 pages) | Cited 67 times

Online Publication Date: 22 October 2003

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High‐frequency small‐signal capacitances of semiconductor junction vs temperature, from the initial conditions of filled and emptied traps in the junction depletion region, are used to determine the trap concentration and the thermal activation energies of trapped electrons and holes. Illustrations are given for silicon N + P diodes doped with gold impurity or irradiated with 1‐MeV electrons, showing the room‐temperature annealing for the latter.

Electron‐Beam Excitation of the Nitrogen Laser

R. W. Dreyfus and R. T. Hodgson

Appl. Phys. Lett. 20, 195 (1972); http://dx.doi.org/10.1063/1.1654105 (3 pages) | Cited 20 times

Online Publication Date: 22 October 2003

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Stimulated emission near 3371 Å is reported for the first time using a commercial electron‐beam generator as an energy source. A 2 × 103‐A∕cm2 3‐nsec pulse of 400‐keV electrons from a field‐emission diode traveled 160 cm down a ¾‐in. tube containing N2 at pressures of 10–50 Torr. A longitudinal magnetic field of 2–10 kG helped confine the electrons in the tube. The 400‐keV electrons produce secondary and subsequent cascade electrons with energies from 0–200 keV. Those electrons with 13–17 eV excite nitrogen molecules to the upper lasing (C3Πu) state. Sufficient concentration of excited nitrogen molecules is produced for the gas to show superradiance with 60 kW of light output power.

Luminescence from LiNbO3

A. Hordvik and H. Schlossberg

Appl. Phys. Lett. 20, 197 (1972); http://dx.doi.org/10.1063/1.1654106 (3 pages) | Cited 10 times

Online Publication Date: 22 October 2003

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LiNbO3 has been found to emit strong luminescence when irradiated by a ruby laser beam. The luminescence varies linearly with input power, is broad band, independent of crystal orientation, and decreases exponentially with the inverse absolute temperature, as does the luminescence decay time. The effect is closely related to so‐called ``optical index damage'', and provides a new means for studying that phenomenon.

Electric‐Field‐Induced Orientational Deformation of Nematic Liquid Crystals: Tunable Birefringence

Frederic J. Kahn

Appl. Phys. Lett. 20, 199 (1972); http://dx.doi.org/10.1063/1.1654107 (3 pages) | Cited 46 times

Online Publication Date: 22 October 2003

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Spatially uniform birefringences tunable over the range 0. 0–0. 15 for applied voltages less than 20 V rms and with a sharp threshold below 4 V rms are obtained for thin layers of nematic liquid crystals with negative dielectric anisotropy. The achievement of spatially uniform tunable birefringence with negative‐dielectric‐anisotropy materials requires a source of in‐plane anisotropy which is provided by a unique previously unreported molecular configuration at zero field. At V=0, the molecules align with their long axes at a small angle to the sample normal. The experimental results are analyzed in terms of a continuum model and experimental values obtained for the relevant elastic constants.

New Noncrystalline Germanium which Crystallizes ``Explosively'' at Room Temperature

Takeshi Takamori, Russell Messier, and Rustum Roy

Appl. Phys. Lett. 20, 201 (1972); http://dx.doi.org/10.1063/1.1654108 (3 pages) | Cited 53 times

Online Publication Date: 22 October 2003

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We report herein the preparation of a form of noncrystalline Ge film by rf sputtering on to various substrates, which crystallizes with ``explosive'' velocities when triggered by a localized transient energy pulse. The films show this phenomenon only when they are thicker than about 10 μ. The crystallization wave appears to be acoustically transmitted.
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Erratum: Layering in Sputtered Tantalum Films

Neil Waterhouse

Appl. Phys. Lett. 20, 204 (1972); http://dx.doi.org/10.1063/1.1654109 (1 page)

Online Publication Date: 22 October 2003

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Erratum: A Two‐Frequency Coincidence Addressing Scheme for Nematic‐Liquid‐Crystal Displays

C. R. Stein and R. A. Kashnow

Appl. Phys. Lett. 20, 204 (1972); http://dx.doi.org/10.1063/1.1654110 (1 page)

Online Publication Date: 22 October 2003

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Erratum: Infrared Detection by Schottky Barriers on Epitaxial PbTe

E. M. Logothetis, H. Holloway, A. J. Varga, and E. Wilkes

Appl. Phys. Lett. 20, 204 (1972); http://dx.doi.org/10.1063/1.1654111 (1 page)

Online Publication Date: 22 October 2003

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