APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

1 Apr 1972

Volume 20, Issue 7, pp. 235-267


Effect of Proton Bombardment on Pb0.76Sn0.24Te

T. F. Tao, C. C. Wang, and J. W. Sunier

Appl. Phys. Lett. 20, 235 (1972); http://dx.doi.org/10.1063/1.1654125 (3 pages) | Cited 6 times

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
Effects of 200–450‐keV proton bombardment on the electrical properties of Pb0.76Sn0.24Te were studied. p‐type samples of initial hole concentration in the low 1017∕cm3 range were converted to n type after a proton dose of 5 × 1013 p∕cm2. For samples of higher initial hole concentration, the conversion was less consistent. The change in mobility due to bombardment was found to be moderate. The mobilities of some p‐type samples were doubled after type conversion.

Beam Effects in the Analysis of As‐Doped Silicon by Channeling Measurements

E. Rimini, J. Haskell, and J. W. Mayer

Appl. Phys. Lett. 20, 237 (1972); http://dx.doi.org/10.1063/1.1654126 (3 pages) | Cited 21 times

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
Channeling‐effect measurements with MeV He ions have been used to study the lattice location of As in silicon. Over the concentration range studied (5 × 1019 − 1.2 × 1021∕cm3) As was found to be 90–95% on substitutional sites. However, it was found that bombardment with the analysis beam caused 20–40% of the As to move off lattice sites. This effect may be responsible for the relatively low As substitutional fraction found in previous investigations. No bombardment‐induced off‐lattice movement was found in Sb‐doped Si indicating that this movement is species dependent.

Optical Transmission in Liquid‐Core Quartz Fibers

J. Stone

Appl. Phys. Lett. 20, 239 (1972); http://dx.doi.org/10.1063/1.1654127 (3 pages) | Cited 23 times

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
Multimode liquid‐core quartz fibers, potentially useful for long‐distance optical communication, have been constructed. The optical transmission loss of these fibers has been measured between 6000 and 11 000 Å. Fibers filled with tetrachloroethylene or a mixture of equal parts by volume of tetrachloroethylene and carbon tetrachloride have transmission loss of 20 dB∕km or less between 8400 and 8600 Å and between 10 400 and 11 000 Å. These bands are of particular interest because within them operate highly promising oscillators such as the GaAs diode and the Nd: YAG laser. An absorption peak of 80 dB∕km at 9600 Å is attributed to a small percentage of OH in the tetrachloroethylene. In the wavelength intervals between 7000 and 7600 Å and between 8200 and 11 000 Å these fibers have losses lower than or about equal to those reported for any other fibers.

New Thin‐Film Tunnel Triode Using Amorphous Semiconductors

R. F. Shaw, H. Fritzsche, M. Silver, P. Smejtek, S. Holmberg, and S. R. Ovshinsky

Appl. Phys. Lett. 20, 241 (1972); http://dx.doi.org/10.1063/1.1654128 (3 pages) | Cited 2 times

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
A new thin‐film tunnel triode is discussed which uses a p‐type amorphous film to achieve amplification of injected current from a tunnel cathode. It is not only the basis for a new semiconductor device but also suggests a novel method for measuring electrical properties of semiconductors.

CO Laser Action by C2H2 Oxidation

J. D. Barry, W. E. Boney, J. E. Brandelik, D. M. Mulder, and J. K. Woessner

Appl. Phys. Lett. 20, 243 (1972); http://dx.doi.org/10.1063/1.1654129 (2 pages) | Cited 1 time

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
Laser emission has been detected from CO molecules produced by the dc discharge‐initiated chemical oxidation of C2H2. The vibrational‐rotational transitions were P branch from v = 3:2 to v = 11:10 with J = 11−14, nominally. The explosive property of the oxidation reaction was verified.

Bistable Switching in Metal‐Semiconductor Junctions

A. Moser

Appl. Phys. Lett. 20, 244 (1972); http://dx.doi.org/10.1063/1.1654130 (2 pages) | Cited 13 times

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
Bistable switching with memory has been achieved in various n‐type GaAs Schottky contacts and n‐type Si Schottky contacts doped with trap impurities. Transition from the low‐conductivity state into a high‐conductivity state is established after a delay of 10 nsec, when a threshold voltage is exceeded. With opposite bias direction, resetting occurs in 10 nsec by exceeding a current threshold. Either state is maintained over weeks without bias.

High‐Field Transport Properties of GaSb

J. G. Ruch

Appl. Phys. Lett. 20, 246 (1972); http://dx.doi.org/10.1063/1.1654131 (3 pages)

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
The recent availability of experimental data on the hot‐electron transfer in GaSb has stimulated the present theoretical work. In the past, the only comparison between hot‐electron transport theory and experiment has been through the velocity‐field characteristic or galvanic‐magnetic phenomena. Because of the insensitivities of these macroscopic characteristics to the value of the deformation potential for nonequivalent intervalley scattering, an exact value for the latter, which governs the electron transfer between central and satellite valleys, could not be obtained. A Monte Carlo calculation has been used to obtain the deformation potential for nonequivalent intervalley scattering by interpreting the experimental data on hot‐electron transfer in GaSb obtained using the Faraday rotation.

Behavior of Phosphorous and Arsenic Diffused Simultaneously into Silicon Crystals

F. Fujimoto, K. Komaki, M. Watanabe, and T. Yonezawa

Appl. Phys. Lett. 20, 248 (1972); http://dx.doi.org/10.1063/1.1654132 (2 pages) | Cited 1 time

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
Behavior of phosphorus and arsenic atoms diffused simultaneously into silicon crystals, in which the density of phosphorus at the surface is 1021 cm−3, was studied by random and aligned spectra of backscattered helium ions and radioactive analysis techniques. It was concluded that the phosphorus atoms enter substitutionally and arsenic atoms interstitially, indicating that interstitial atoms inhibit the generation of dislocations.

The Use of Sm3 Co in Sintering SmCo5 Magnets

R. C. Carriker

Appl. Phys. Lett. 20, 250 (1972); http://dx.doi.org/10.1063/1.1654133 (2 pages) | Cited 4 times

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
The use of single phase Sm3Co as a sintering aid in the liquid‐phase sintering of SmCo5 has been investigated. The magnetic properties of this system were studied as a function of the sintering‐aid content and sintering time vs temperature. Using a modest alignment field of only 10 kOe, a magnet with an energy product of 17.0 MG Oe has been achieved.

Behavior of a Deionized Liquid Crystal Subjected to Unipolar Injection in Nematic and Isotropic Phase

Jean‐Claude Lacroix and Robert Tobazéon

Appl. Phys. Lett. 20, 251 (1972); http://dx.doi.org/10.1063/1.1654134 (3 pages) | Cited 8 times

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
Electrohydrodynamic phenomena in insulating MBBA subjected to unipolar injection of ionic carriers are described. Near the transition temperature, the transient currents following a voltage step were similar in the nematic and isotropic phases, over a wide range of voltages and electrode separations. High‐speed cinematography, Schlieren techniques, and the Kerr effect were resorted to in this investigation. Liquid motion was observed having a time lag and exhibited patterns closely similar to those previously observed in isotropic polar liquids. The velocities of hydrodynamic disturbances and of space‐charge fronts varied over a broad range, depending on experimental conditions.

High‐Field Transport Properties of CdTe

J. G. Ruch

Appl. Phys. Lett. 20, 253 (1972); http://dx.doi.org/10.1063/1.1654135 (2 pages) | Cited 4 times

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
A Monte Carlo calculation has been used to calculate the high‐field transport properties of CdTe where the full complexity of the band structure has been taken into account. Comparison with experimental results yields basic transport parameters, e.g., deformation potential for nonequivalent intervalley scattering.

Josephson Junctions with Nb∕Al Composite Electrodes

R. B. Laibowitz and A. F. Mayadas

Appl. Phys. Lett. 20, 254 (1972); http://dx.doi.org/10.1063/1.1654136 (3 pages) | Cited 12 times

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
Josephson tunnel junctions have been fabricated incorporporating a thin layer of normal metal which is oxidized to form the tunnel barrier. The tunnel devices tested were of the form Nb∕Al∕Al2O3∕Nb and several milliamperes of Josephson current were observed at 4.2°K. These samples have been found to have better defined tunneling characteristics than samples of the form Nb∕NbOx∕Nb.

Relative Raman Cross Section for O3, CH4, C3H8, NO, N2O, and H2

D. G. Fouche and R. K. Chang

Appl. Phys. Lett. 20, 256 (1972); http://dx.doi.org/10.1063/1.1654137 (2 pages) | Cited 28 times

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
The relative Raman cross sections of gases which are of interest in air pollution studies have been measured at 5145 Å. These relative differential cross sections compared to that of N2 are as follows: O3 (4.0), CH4 (8.0), C3H8 (2.4, 5.8), NO (0.55), N2O (2.7, 0.53), and H2 (2.2). The absolute Raman cross section for N2 has been revised to be (4.4±1.7) × 10−31 cm2∕sr at 5145 Å, for vertically polarized input and 90° scattered Raman radiation that is not analyzed for its polarization.

Visible Cathodoluminescence of AgGaS2, a I‐III‐VI2 Chalcopyrite Compound

J. P. Noblanc, J. Loudette, G. Duraffourg, and D. S. Robertson

Appl. Phys. Lett. 20, 257 (1972); http://dx.doi.org/10.1063/1.1654138 (3 pages) | Cited 13 times

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
The cathodoluminescence of AgGaS2, a I‐III‐VI2 ternary chalcopyrite compound, has been studied in the 2.1–2.8‐eV range at 300, 77, and 21 °K. At 300 and 77 °K the annihilation of free excitons is observed, while at 21 °K only extrinsic transitions appear. A study of the polarization shows that the excitonic lines are polarized E ∥ C.

Observation of Film Growth Process by Means of Backscattering Technique

O. Meyer, H. Mann, and G. Linker

Appl. Phys. Lett. 20, 259 (1972); http://dx.doi.org/10.1063/1.1654139 (3 pages) | Cited 3 times

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
Evaporated Sn layers on Si and sapphire substrates were used to demonstrate the applicability of the backscattering technique to measurement of the fraction of covered area, the average thickness of the layer, and the sticking factor for temperatures over the range 77–400 °K. The sticking factor at 293°K was found to be ⅓ of that at 77 and 393 °K, and 19% higher at room temperature (r.t.) for Sn on Sn as compared with Sn on Si. At 393 °K the fraction of covered area was found to be about 60% and the average island thickness was in the range 450–1000 Å.

Fast‐Interface‐State Losses in Charge‐Coupled Devices

J. E. Carnes and W. F. Kosonocky

Appl. Phys. Lett. 20, 261 (1972); http://dx.doi.org/10.1063/1.1654140 (3 pages) | Cited 8 times

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
A simple model which predicts the large signal losses in charge‐coupled devices due to fast‐interface‐state trapping is presented, and the predictions of the model are verified by experimental measurements of losses in two‐phase CCD's.

Total Optical Attenuation in Bulk Fused Silica

T. C. Rich and D. A. Pinnow

Appl. Phys. Lett. 20, 264 (1972); http://dx.doi.org/10.1063/1.1654141 (3 pages) | Cited 36 times

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
A survey has been made of optical attenuation in a series of commercially available silica, SiO2, samples to determine the suitability of this material for fiber optical communications. The absorptive component of the attenuation was measured by a precision calorimetric technique, while the scattering component was determined by a new method based on spontaneous Brillouin spectroscopy. Both techniques set an upper limit on the loss and are precise to within a fraction of 1 dB∕km. Of the samples tested, the best has a total attenuation of less than 3 dB∕km at the 1.06‐μ wavelength of the YAlG : Nd laser.

Operation of a Ruby Laser in the Purely Transverse Electric Mode TE01

Dieter Pohl

Appl. Phys. Lett. 20, 266 (1972); http://dx.doi.org/10.1063/1.1654142 (2 pages) | Cited 67 times

Online Publication Date: 22 October 2003

Full Text: | Download PDF

Show Abstract
A ruby laser has been operated in the circular TE01 mode by means of a novel mode selector. Construction, output characteristics, conversion into TM01, and possible applications are described.
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close