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15 Apr 1972

Volume 20, Issue 8, pp. 269-329

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Thin‐MIS‐Structure Si Negative‐Resistance Diode

Tatsuo Yamamoto and Mitsutaka Morimoto

Appl. Phys. Lett. 20, 269 (1972); http://dx.doi.org/10.1063/1.1654143 (2 pages) | Cited 48 times

Online Publication Date: 22 October 2003

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We have realized a high‐switching‐speed Si S‐shaped negative‐resistance diode having a thin MIS structure where the thickness of the SiO2 layer is less than 100 Å. It has a p‐n‐I (insulator)‐M (metal) structure in contrast with a Shockley diode. The threshold and sustaining voltages are about 20 and 2–3 V, respectively. The regenerative nature of this device may be related to the minority carrier injection into the interface between the n layer and the insulating layer, and electron trapping in the interface states.

Broadband Superconducting Quantum Magnetometer

R. A. Kamper and M. B. Simmonds

Appl. Phys. Lett. 20, 270 (1972); http://dx.doi.org/10.1063/1.1654144 (3 pages) | Cited 14 times

Online Publication Date: 22 October 2003

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We describe the design, operation, and performance of a superconducting quantum interference device (SQUID) which operates at a frequency of 9 GHz. It is sensitive to variations of magnetic field in a frequency band from 0 to 1 GHz.

Nonlinear Susceptibility of GaP; Relative Measurement and Use of Measured Values to Determine a Better Absolute Value

B. F. Levine and C. G. Bethea

Appl. Phys. Lett. 20, 272 (1972); http://dx.doi.org/10.1063/1.1654145 (4 pages) | Cited 95 times

Online Publication Date: 22 October 2003

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See Also: Erratum

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We have measured the ratio d36(GaP)∕d11(SiO2) = 185 ± 10% at 1.318 μ. By using this value together with other values in the literature, we determine a better set of absolute values for the nonlinear susceptibility.

Assessment of Tourmaline as an Acoustic‐Surface‐Wave‐Delay Medium

M. F. Lewis and E. Patterson

Appl. Phys. Lett. 20, 275 (1972); http://dx.doi.org/10.1063/1.1654146 (2 pages) | Cited 7 times

Online Publication Date: 22 October 2003

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Measurements and calculations have shown tourmaline to be a useful surface‐acoustic‐wave‐delay medium. In particular, its combination of high velocity and very low propagation losses, together with a moderate piezoelectric coupling strength, makes it suitable for use at higher frequencies than are feasible with quartz or LiNbO3.

Acoustic‐Surface‐Wave Isolator

M. F. Lewis and E. Patterson

Appl. Phys. Lett. 20, 276 (1972); http://dx.doi.org/10.1063/1.1654147 (3 pages) | Cited 13 times

Online Publication Date: 22 October 2003

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A 200‐MHz acoustic‐surface‐wave isolator has been constructed employing an epitaxial layer of Ga‐doped YIG on a gadolinium gallium garnet substrate.

Variation of N2‐Broadened Collisional Width with Rotational Quantum Number for the 10.4‐μm CO2 Band

Charles Young, R. W. Bell, and R. E. Chapman

Appl. Phys. Lett. 20, 278 (1972); http://dx.doi.org/10.1063/1.1654148 (2 pages) | Cited 10 times

Online Publication Date: 22 October 2003

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Collisional widths for the individual rotational lines of the P branch of the 10.4‐μm CO2 band have been measured using a CO2 laser as the ir energy source. Both self‐broadening and N2 broadening have been studied. An anomalously large N2‐broadened width in the vicinity of J = 34 has been observed with an indication of a similar effect for the self‐broadened width.

p‐n Junction Photodiodes in PbTe Prepared by Sb+ Ion Implantation

J. P. Donnelly, T. C. Harman, A. G. Foyt, and W. T. Lindley

Appl. Phys. Lett. 20, 279 (1972); http://dx.doi.org/10.1063/1.1654149 (3 pages) | Cited 17 times

Online Publication Date: 22 October 2003

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n‐p junction photovoltaic detectors in PbTe have been fabricated using Sb+ ion implantation to create the n‐type layer. At 77 °K, 15‐mil square diodes have had zero‐bias resistances as high as 15 MΩ for a resistance‐area product of 2.1×104 Ωcm2. Peak detectivities at 4.4 μm in reduced background as high as 1.6×1012 cmHz1∕2∕W were observed. Diode quantum efficiencies were typically 40% at 4.4 μm.

Efficient Second Harmonic Generation of Picosecond Laser Pulses

T. A. Rabson, H. J. Ruiz, P. L. Shah, and F. K. Tittel

Appl. Phys. Lett. 20, 282 (1972); http://dx.doi.org/10.1063/1.1654150 (3 pages) | Cited 5 times

Online Publication Date: 22 October 2003

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Efficient conversion to the second harmonic (SH) using KD2PO4 and CsH2AsO4 crystals inside a folded cavity of a high‐power‐dye mode‐locked Nd3+: glass laser is reported. For the first time, frequency‐doubled picosecond light pulses have been obtained in CsH2AsO4 with peak powers of the order of 109 W∕cm2 at 0.531 μ for an effective pump power density of 4×109 W∕cm2.

Broadband Efficient Excitation of the Thin‐Ribbon Waveguide for Surface Acoustic Waves

K. H. Yen and R. C. M. Li

Appl. Phys. Lett. 20, 284 (1972); http://dx.doi.org/10.1063/1.1654151 (3 pages) | Cited 3 times

Online Publication Date: 22 October 2003

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A practical method for broadband efficient excitation of the thin‐ribbon waveguide for surface acoustic waves is presented. Other major advantages of the excitation system are the simplicity of both its theoretical design and its practical implementation. Experimentally, a maximum excitation efficiency (power) of 65% has been obtained at an operating frequency of 5.5 MHz. In addition, the measured efficiency was in excess of 55% over the frequency range from 4.7 to 6.4 MHz.

Improved IRQC Performance of CdF2 :Er3+ by Generation of C Local‐Site Symmetry

N. E. Byer, T. C. Ensign, and W. M. Mularie

Appl. Phys. Lett. 20, 286 (1972); http://dx.doi.org/10.1063/1.1654152 (3 pages) | Cited 8 times

Online Publication Date: 22 October 2003

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Selective generation of trigonal (C) symmetry at Er3+ ions in CdF2 by oxygen firing increases the green (4S3∕24I15∕2) radiative efficiency from 1.9 to 52% while causing qualitative changes in the optical absorption and emission associated with these ions. Measurements of the parameters involved in the operation of an infrared quantum counter suggest that this oxygen‐fired material could be used to construct an uncooled infrared detector having a minimum detectable power of 3.6×10−14 W at 1.53 μm, appreciably better than currently available detectors sensitive at this wavelength.

Enhancement of Nonlinearity in Surface‐Acoustic‐Wave Propagation from Coupling to Charge Carriers

C. W. Lee and R. L. Gunshor

Appl. Phys. Lett. 20, 288 (1972); http://dx.doi.org/10.1063/1.1654153 (3 pages) | Cited 12 times

Online Publication Date: 22 October 2003

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We report the observation of second harmonic generation and acoustic‐wave convolution for surface waves on YZ‐cut lithium niobate where the nonlinearity originates with the charge‐particle dynamics in a nearby semiconductor. The second harmonic generation is 28 dB above that obtained from LiNbO3 alone, and the convolution output is 24 dB above reports for LiNbO3 alone.

Effect of Relaxation on Small‐Scale Filament Formation by Ultrashort Light Pulses

J. A. Fleck and R. L. Carman

Appl. Phys. Lett. 20, 290 (1972); http://dx.doi.org/10.1063/1.1654154 (4 pages) | Cited 17 times

Online Publication Date: 22 October 2003

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The development of filamentary structure associated with the self‐focusing of ultrashort pulses in the presence of dielectric relaxation is examined. Numerical solutions to the equations of self‐focusing and relaxation display filament formation, although filament stabilization is strongly dependent on power. This suggests that further ingredients may be required for a complete theory of filament formation.

Analysis of CdTe as a γ‐Ray Spectrometer

K. Zanio and W. Akutagawa

Appl. Phys. Lett. 20, 294 (1972); http://dx.doi.org/10.1063/1.1654155 (3 pages) | Cited 2 times

Online Publication Date: 22 October 2003

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Gamma spectra were taken at room temperature with devices fabricated from semi‐insulating CdTe. A resolution of 8 keV (FWHM) was found for 241Am (60 keV), 10 keV for 57Co (122 keV), 30 keV for 137Cs (662 keV), and 75 keV for 60Co (1.33 MeV). The photoelectric absorption coefficient at a photon energy of 122 keV was measured to be 5.4 ± 0.4 cm−1 in CdTe. The escape of the photoelectron at higher photon energies degraded the spectra and lowered the absorption coefficients below their theoretical values. Devices were also encapsulated within probes and their efficiency to photoelectric events was compared with that of a silicon detector. Ratios of 150:1 for 57Co and 12:1 for 241Am were found favoring CdTe.

Four‐Hundredth‐Order Harmonic Mixing of Microwave and Infrared Laser Radiation Using a Josephson Junction and a Maser

D. G. McDonald, A. S. Risley, J. D. Cupp, K. M. Evenson, and J. R. Ashley

Appl. Phys. Lett. 20, 296 (1972); http://dx.doi.org/10.1063/1.1654156 (4 pages) | Cited 31 times

Online Publication Date: 22 October 2003

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For mixing in a Josephson junction at infrared frequencies, we have shown that the available power from the junction increases as the intermediate frequency is increased. Following this result an infrared receiver has been developed incorporating a 9‐GHz maser preamplifier at the i.f. Using this system, the beat between the 401st harmonic of a high‐quality microwave source and a 3.8‐THz infrared laser has been observed. Also, for low‐order mixing at 3.8 THz, a comparison of beat signals from a Josephson junction and a room‐temperature mixer has been made.

Nonresonant Energy Transfer from Er3+ to Yb3+ in LaF3

Eichi Okamoto, Hiromitsu Masui, Katsutoshi Muto, and Kenzo Awazu

Appl. Phys. Lett. 20, 299 (1972); http://dx.doi.org/10.1063/1.1654157 (3 pages)

Online Publication Date: 22 October 2003

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Energy transfer in LaF3; Er, Yb is studied by observing the lifetimes of Er3+ in excited states and the excitation spectra both at room temperature and at 77 °K. It is found that the energy transfer from Er3+ (4S3∕24I13∕2) to Yb3+ (2F7∕22F5∕2) is associated with the emission of three phonons of about 350 cm−1, and that the energy transfer from Er3+ (2H9∕24F9∕2) to Yb3+ accompanied by the absorption of phonons takes place.

Small‐Signal Negative Conductance in BARITT Devices

E. P. EerNisse

Appl. Phys. Lett. 20, 301 (1972); http://dx.doi.org/10.1063/1.1654158 (4 pages) | Cited 5 times

Online Publication Date: 22 October 2003

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Numerical calculations utilizing a realistic carrier velocity vs electric field relationship have been carried out for the dc current‐voltage characteristics and small‐signal ac response of abrupt Si p+np+, p+nvp+, n+pn+, and n+pπn+ barrier injection transit time (BARITT) devices. The small‐signal ac response of these devices can be represented accurately by the depletion capacitance either in parallel with a negative conductance or in series with a negative resistance. The negative conductance has maximum amplitude for transit angles of approximately 1.55π and dc current density biases of 20–100 A∕cm2. A distinct advantage was found in small‐signal applications for p+np+ devices over p+nvp+ devices and for n+pn+ devices over n+pπn+ devices.

Glass‐Forming Ability vs Local Order and Covalent Character in the As☒Te System

J. Cornet and D. Rossier

Appl. Phys. Lett. 20, 304 (1972); http://dx.doi.org/10.1063/1.1654159 (3 pages) | Cited 9 times

Online Publication Date: 22 October 2003

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An experimental study of the constitution of the As☒Te glasses has been carried out, using glass‐forming‐ability measurements, high‐angle diffraction, differential thermal analysis, and other thermodynamic determinations. Evidence is definitely given for a difference of valency between crystalline and glassy states. A model is suggested for the structural units in the glass and for the modifications induced by an excess of arsenic or tellurium with respect to the critical As2Te3 composition.

Higher‐Order Distributed Feedback Oscillators

J. E. Bjorkholm and C. V. Shank

Appl. Phys. Lett. 20, 306 (1972); http://dx.doi.org/10.1063/1.1654160 (3 pages) | Cited 30 times

Online Publication Date: 22 October 2003

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We report the observation of higher‐order disftributed‐feedback (DFB) laser oscillation using sinusoidal susceptibility modulation. For higher‐order DFB oscillation the period of the susceptibility modulation is a multiple m of one‐half the lasing wavelength. We have obtained tunable DFB oscillation for m=2 and m=3 by pumping rhodamine 6G with interference fringes. A discussion of two possible mechanisms which could account for our observations is presented. Higher‐order DFB operation reduces the resolution required for fabricating a DFB laser.

Vibrational Population, Gain, and Excitation Mechanism of the Carbon Monoxide Laser

E. N. Lotkova, G. N. Mercer, and N. N. Sobolev

Appl. Phys. Lett. 20, 309 (1972); http://dx.doi.org/10.1063/1.1654161 (3 pages) | Cited 1 time

Online Publication Date: 22 October 2003

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The absolute vibrational population distribution of a cooled CO☒He laser plasma has been measured and is in excellent agreement with theoretical predictions based on V‐V anharmonic exchange relaxation, particularly when measured values of electron density are considered. The population distribution was obtained from small‐signal‐gain measurements at the line centers of 21 vibration‐rotation transitions in a wavelength‐selective laser oscillator.

Uniformly Polarized GaAs Laser Array

Harold Wieder and John C. Marinace

Appl. Phys. Lett. 20, 311 (1972); http://dx.doi.org/10.1063/1.1654162 (2 pages)

Online Publication Date: 22 October 2003

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A structure is described which yields uniform polarization in the emitted light from an array of GaAs lasers. The exterior cleaved faces define a standard Fabry‐Perot structure, and a 2‐μ air space within the cavity inclined at the Brewster angle provides the necessary discrimination in gain between orthogonal modes to produce TE polarization (within ± 3°) for all lasers in the array.

Light Amplification in a Thin Film

M. S. Chang, P. Burlamacchi, C. Hu, and J. R. Whinnery

Appl. Phys. Lett. 20, 313 (1972); http://dx.doi.org/10.1063/1.1654163 (2 pages) | Cited 11 times

Online Publication Date: 22 October 2003

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Light amplification at 6328 Å in a rhodamine‐B‐doped polyurethane thin film is observed. The light‐guiding thin film is pumped transversely with a nitrogen laser. Superradiant light of the dye‐doped film is observed to be guided by the thin film. When a He☒Ne light at 6328 Å is coupled into the same thin film along the same path, amplification results. Maximum unsaturated gain on the order of 13 cm−1 was experimentally determined by two different methods in a single‐mode thin‐film light guide with a concentration of 3.3×10−2 mol∕liter when wet.

Effect of Hydrogen on CO2 TEA Lasers

Thomas F. Deutsch

Appl. Phys. Lett. 20, 315 (1972); http://dx.doi.org/10.1063/1.1654164 (2 pages) | Cited 15 times

Online Publication Date: 22 October 2003

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The addition of several Torr hydrogen to a transversely excited pulsed high‐pressure CO2 laser using continuous shaped electrodes has been found to suppress the formation of bright arcs and lead to better pulse‐to‐pulse reproducibility. The hydrogen increases the threshold energy for arc formation and leads to as much as a factor of 2 increase in the power output of the laser. The gain of the laser is also increased by the addition of hydrogen.

Green Electroluminescence in ZnSe☒ZnTe Heterojunctions by Liquid‐Phase Epitaxial Growth

Shigeo Fujita, Seiichi Arai, Kunio Itoh, Fumi Moriai, and Tadao Sakaguchi

Appl. Phys. Lett. 20, 317 (1972); http://dx.doi.org/10.1063/1.1654165 (2 pages) | Cited 7 times

Online Publication Date: 22 October 2003

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ZnSe☒ZnTe heterojunctions prepared by liquid‐phase epitaxial growth method exhibited green electroluminescence with the peak of about 5350 Å at 77°K. The photoluminescence at 77°K from uv excitation was also measured and it was found that the green emission seems to result from hole rather than electron injection.

Increase of Dislocation Density in Ice by Dissolved Hydrogen Fluoride

Stephen J. Jones and Narendra K. Gilra

Appl. Phys. Lett. 20, 319 (1972); http://dx.doi.org/10.1063/1.1654166 (2 pages) | Cited 9 times

Online Publication Date: 22 October 2003

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See Also: Erratum

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X‐ray topography shows that at − 18°C small amounts of hydrogen fluoride diffused into ice single crystals increased the density of dislocations by a factor of about 5 by introducing both prismatic dislocation loops and additional b=〈1120〉 dislocations.

Distortion of the Central Resonance in Long Interdigital Transducers

M. R. Daniel and P. R. Emtage

Appl. Phys. Lett. 20, 320 (1972); http://dx.doi.org/10.1063/1.1654167 (3 pages) | Cited 3 times

Online Publication Date: 22 October 2003

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Experiments are reported showing that the central resonance in long uniform interdigital transducers is distorted and the bandwidth reduced. These phenomena are shown to result from back‐piezoelectric effects.
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