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15 Apr 1972

Volume 20, Issue 8, pp. 269-329

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Fast CO2‐Laser Modulation by Hot Carriers

K. ‐H. Müller, G. Nimtz, and M. Selders

Appl. Phys. Lett. 20, 322 (1972); http://dx.doi.org/10.1063/1.1654168 (2 pages) | Cited 4 times

Online Publication Date: 22 October 2003

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Experiments carried out with n‐germanium have shown that hot carriers modulate the transmission of the radiation of CO2 lasers. The modulation is very fast and theoretically limited only by the relaxation time of the carriers, which is of the order of 10−12 sec.

Formation of Injecting and Blocking Contacts on High‐Resistivity Germanium

G. Ottaviani, V. Marrello, J. W. Mayer, M‐A. Nicolet, and J. M. Caywood

Appl. Phys. Lett. 20, 323 (1972); http://dx.doi.org/10.1063/1.1654169 (3 pages) | Cited 16 times

Online Publication Date: 22 October 2003

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The behavior of Al and Sb∕Ge∕Sb layers evaporated on high‐purity Ge and heat treated at 280 °C is studied by reverse‐recovery, double‐injection, and nuclear‐particle‐response techniques. The results indicate that the contacts have the injection and blocking characteristics of p‐ and n‐type material, respectively. Backscattering measurements with 1.8‐MeV 4He+ ions show that solid‐solid reactions occur.

Solid‐Phase Growth of Ge from Evaporated Al Layer

J. M. Caywood, A. M. Fern, J. O. McCaldin, and G. Ottaviani

Appl. Phys. Lett. 20, 326 (1972); http://dx.doi.org/10.1063/1.1654170 (2 pages) | Cited 7 times

Online Publication Date: 22 October 2003

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Solid Al was used as a medium from which to grow Ge onto a substrate of crystalline Ge. Evidence for growth was obtained from MeV He+ backscattering, which showed both Ge dissolution and growth can occur at the Ge∕Al interface. Backscattering experiments also indicated transport from evaporated Ge through the Al medium to a crystalline Ge substrate. Diodes formed by temperature cycling a structure of n‐type Ge∕Al showed hole injection into the substrate during reverse‐recovery‐time measurements, confirming the expectation that Ge growth is present and is heavily p type from incorporation of the Al solvent during growth.

Surface Motion Measurements on Surface Elastic Waves

M. W. Lawrence and L. W. Davies

Appl. Phys. Lett. 20, 328 (1972); http://dx.doi.org/10.1063/1.1654171 (2 pages)

Online Publication Date: 22 October 2003

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The motion in the sagittal plane described by surface particles due to passage of a surface elastic wave has been accurately measured in Y‐cut X‐propagating quartz. The motion was found to be retrograde elliptical with the major axis normal to the crystal surface. The ratio of longitudinal to transverse axes is 0.672 ± 0.005, a value in very good agreement with theory.
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Erratum: Signal Generation via Nonlinear Interaction of Oppositely Directed Sonic Waves in Piezoelectric Semiconductors

W. C. Wang

Appl. Phys. Lett. 20, 329 (1972); http://dx.doi.org/10.1063/1.1654172 (1 page)

Online Publication Date: 22 October 2003

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Erratum: Electron‐Beam Excitation of the Nitrogen Laser

R. W. Dreyfus and R. T. Hodgson

Appl. Phys. Lett. 20, 329 (1972); http://dx.doi.org/10.1063/1.1654173 (1 page)

Online Publication Date: 22 October 2003

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