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1 May 1972

Volume 20, Issue 9, pp. 333-372


Time‐of‐Flight Mobility and Trapping Results for ZnSe

John L. Heaton, George H. Hammond, and Ronald B. Goldner

Appl. Phys. Lett. 20, 333 (1972); http://dx.doi.org/10.1063/1.1654174 (3 pages) | Cited 4 times

Online Publication Date: 22 October 2003

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Time‐of‐flight mobility and trapping results for zinc selenide are presented. The data were obtained at room temperature for electric fields in the range 3×104−8×105 V∕cm. A relatively constant hole mobility (∼50 cm2∕V sec) was found for the entire range of investigated fields. The electron mobility was approximately constant (∼400 cm2∕V sec) up to E≃3×105 V∕cm, above which the drift velocity remained constant. No obvious negative differential mobility was observed, even though the Gunn effect has been reported for the field range investigated. Trapping and detrapping times in the vicinity of 1 nsec are reported for both holes and electrons. The field dependence of the electron‐trapping times is unusual and remains unexplained.

Structure on the High‐Energy Side of the KL23M Auger Peak from Solid Aluminum: Internal Photoemission

C. J. Powell

Appl. Phys. Lett. 20, 335 (1972); http://dx.doi.org/10.1063/1.1654175 (3 pages) | Cited 4 times

Online Publication Date: 22 October 2003

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Some weak structure on the high‐energy side of the L23MM Auger peaks for Al and Si has been recently interpreted as being possibly due to the simultaneous decay of an inner‐shell vacancy and a volume plasmon. It is shown here that similar structure due to multiple ionization is to be expected and that photoemission caused by internally generated x rays can be observed if the fluorescent yield is not too small. Relatively strong structure of the latter type has been observed in the secondary‐electron energy distribution of evaporated Al on the high‐energy side of the KL23M Auger peak.

Electrohydrodynamic Instabilities in Nematic Liquid Crystals in Low‐Frequency Fields

Dietrich Meyerhofer and Alan Sussman

Appl. Phys. Lett. 20, 337 (1972); http://dx.doi.org/10.1063/1.1654176 (3 pages) | Cited 14 times

Online Publication Date: 22 October 2003

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The threshold for domain formation and the characteristics of domains have been measured over an extended frequency range. Comparison with the Helfrich‐Orsay theory shows a good fit of the threshold over a wider than expected variation of cell thicknesses. This is even true near the ``critical'' frequency where the domain size decreases with increasing frequency. In addition, a new domain regime is described at frequencies smaller than the inverse ion transit time.

Instantaneous Turbulence Velocity Measurement by Laser Doppler Velocimeter

C. P. Wang

Appl. Phys. Lett. 20, 339 (1972); http://dx.doi.org/10.1063/1.1654177 (3 pages) | Cited 11 times

Online Publication Date: 22 October 2003

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A frequency‐modulation (FM) demodulation scheme for the measurement of instantaneous velocity of turbulent flow by laser Doppler velocimeter is proposed. An analysis based on the theory of optical‐mixing spectroscopy is given.

CO Laser Line Selection for High Atmospheric Transmission

M. L. Bhaumik

Appl. Phys. Lett. 20, 342 (1972); http://dx.doi.org/10.1063/1.1654178 (3 pages) | Cited 5 times

Online Publication Date: 22 October 2003

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An intracavity gas‐cell technique is demonstrated for restricting the carbon monoxide (CO) laser oscillations to lines coincident with the transmission bands of the atmosphere. Using an intracavity water‐vapor cell, the CO laser gain was spoiled in lines that are highly absorbed by the atmospheric water vapor, permitting the oscillations to build up only on the higher transmission lines.

Very‐Low‐Current Operation of Mesa‐Stripe‐Geometry Double‐Heterostructure Injection Lasers

T. Tsukada, H. Nakashima, J. Umeda, S. Nakamura, N. Chinone, R. Ito, and O. Nakada

Appl. Phys. Lett. 20, 344 (1972); http://dx.doi.org/10.1063/1.1654179 (2 pages) | Cited 22 times

Online Publication Date: 22 October 2003

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Mesa‐stripe‐geometry double‐heterostructure lasers which operate at low‐current level have been fabricated. Lasers of this geometry are made by etching the heterostructure layers, leaving a stripe region with a width ranging from 10 to 40 μm. The current‐spreading effect inherent in stripe‐geometry lasers is eliminated in this structure. As a result of the small active region and the low‐threshold current density, a significant reduction of total threshold current has been realized. The lowest‐threshold current is 50 mA in pulsed operation, and 75 mA in dc. The thermal resistance of the diode of this structure is nearly as low as that of the stripe‐geometry laser.

Preparation and Detection of Large Coherent Optical Polarizations in Resonant Media

A. V. Nurmikko and S. E. Schwarz

Appl. Phys. Lett. 20, 346 (1972); http://dx.doi.org/10.1063/1.1654180 (3 pages) | Cited 7 times

Online Publication Date: 22 October 2003

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An unusually orderly excited state of a degenerate resonant molecular system occurs when all the resonant molecules are polarized in the same phase. The largest obtainable optical polarization of the medium is obtained under such conditions. Here we describe a technique by which such a maximally orderly excited state may be approached. Adiabatic fast half‐passage is used. Neither a tunable laser nor a tunable resonant medium is required, and disorder is not introduced by local intensity variations or degeneracy of the resonant levels. Nearly complete polarization of the available molecules has been measured by means of a phase‐switching technique.

Implanted Interstitial Boron Atoms in Silicon

B. Nétange, M. Cherki, and P. Baruch

Appl. Phys. Lett. 20, 349 (1972); http://dx.doi.org/10.1063/1.1654181 (3 pages) | Cited 5 times

Online Publication Date: 22 October 2003

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Photoconductivity methods are used to investigate high‐resistivity n‐type and p‐type silicon implanted with doses of ∼1014 B+∕cm2 of 100 keV. Besides the photoconductivity band associated with the divacancy, a photoconductivity level at ∼0.4 eV is detected in the spectrum. This level anneals at ∼300°C; it has been associated with boron interstitial atoms in sites of trigonal symmetry for boron‐doped silicon irradiated with electrons. The appearance of this level is not so clear in the case of the p‐type silicon substrate where the substrate contribution to the photoconductivity is larger.

Generation of Single Picosecond and Subpicosecond Light Pulses

A. Penzkofer, D. von der Linde, A. Laubereau, and W. Kaiser

Appl. Phys. Lett. 20, 351 (1972); http://dx.doi.org/10.1063/1.1654182 (4 pages) | Cited 23 times

Online Publication Date: 22 October 2003

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Picosecond light pulses passing through a saturable absorber show considerable pulse shortening. For instance, under special favorable conditions the pulse duration was found to be reduced from 8 to 2. 6 psec in a single transit. Using a multiple‐absorber‐amplifier system, light pulses were shortened from 8 to 0.7 psec in five transits. The shortest pulse seen in our experiments had a duration of less than 0.5 psec. Calculations based on a two‐level approximation of the absorbing medium agreed well with the experimental results.

Uniform Direct‐Current Discharges in Atmospheric Pressure He∕N2∕CO2 Mixtures Using Gas Additives

R. L. Schriever

Appl. Phys. Lett. 20, 354 (1972); http://dx.doi.org/10.1063/1.1654183 (3 pages) | Cited 11 times

Online Publication Date: 22 October 2003

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Uniform direct‐current discharges in atmospheric‐pressure mixtures of He∕N2∕CO2 have been achieved by the use of an organic gas additive. Best results were obtained using xylene as an additive with a concentration of 0. 5% in a 90∕5∕5 gas mixture. Observed current densities were limited by external circuitry, but uniform pulsed discharges with current densities over 3 A∕cm2 were obtained when the dc discharge was pulsed.

Investigation of a 1‐J Pulsed Discharge‐Initiated HF Laser

H. Pummer and K. L. Kompa

Appl. Phys. Lett. 20, 356 (1972); http://dx.doi.org/10.1063/1.1654184 (2 pages) | Cited 23 times

Online Publication Date: 22 October 2003

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A pulsed hydrogen fluoride chemical laser is described whose maximum energy and power is 1.2 J and 3 MW. Details of the experimental setup are given and spectrum measurements for various SF6H2 pressures are reported. The results indicate that under these conditions rotational levels with J> 10 are substantially pumped.

Light Scattering from High‐Lying Electronic Excitations in CoF2

J. T. Hoff, P. A. Grunberg, and J. A. Koningstein

Appl. Phys. Lett. 20, 358 (1972); http://dx.doi.org/10.1063/1.1654185 (2 pages) | Cited 3 times

Online Publication Date: 22 October 2003

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Raman spectra of CoF2 above and below its Néel point have been obtained which show four very weak lines in the region between 700 and 1500 cm−1. These are attributed to transitions from the ground state to the four highest‐lying levels within the resolved 4Γ4+ manifold of Co2+. The spectra are in good agreement with data for Co2+ in MgF2.

Growth Kinetics Observed in the Formation of Metal Silicides on Silicon

R. W. Bower and J. W. Mayer

Appl. Phys. Lett. 20, 359 (1972); http://dx.doi.org/10.1063/1.1654186 (3 pages) | Cited 98 times

Online Publication Date: 22 October 2003

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Backscattering of MeV He ions has been used to investigate the composition and growth kinetics of metal silicides formed from thin films of Pd, Ti, Cr, and Mo evaporated onto Si. In each system studied, one silicide phase predominated (Pd2Si, TiSi2, CrSi2, and MoSi2). The thickness of the phase increased with (time)0.5 for Pd2Si and TiSi2, and linearly in time for CrSi2 and MoSi2. It was found that these two time dependencies correlate directly with the reaction sensitivity to a thin oxide interface (<100 Å) and to the extent of the silicide formation in the neighborhood of a typical device contact region.

Magnetoelastic Rayleigh‐Type Surface Wave on a Tangentially Magnetized YIG Substrate

J. P. Parekh and H. L. Bertoni

Appl. Phys. Lett. 20, 362 (1972); http://dx.doi.org/10.1063/1.1654187 (3 pages) | Cited 23 times

Online Publication Date: 22 October 2003

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The propagation characteristics of an exchange‐free magnetoelastic Rayleigh‐type surface wave propagating on a YIG substrate in the direction of a tangentially applied bias field are treated. The surface wave is found to be of the leaky‐wave variety within a band of frequencies given approximately by the magnetostatic bulk‐wave spectrum, rather than of the bound surface‐wave variety occurring outside this frequency band.

Ferroelectric Optical Rotation Domains in Single‐Crystal Pb5 Ge3 O11

J. P. Dougherty, E. Sawaguchi, and L. E. Cross

Appl. Phys. Lett. 20, 364 (1972); http://dx.doi.org/10.1063/1.1654188 (2 pages) | Cited 23 times

Online Publication Date: 22 October 2003

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Well‐defined 180° ferroelectric domains of hexagonal shape with reversible optical rotary power are observable in Pb5Ge3O11 with nicols off the crossed position; sharp domain walls appear with crossed nicols. The switching time is given by tα(E − E0)−α, where E0≈3 kV∕cm and α ≈ 1.5.

Low‐Loss Reflection Coatings Using Absorbing Materials

Eberhard Spiller

Appl. Phys. Lett. 20, 365 (1972); http://dx.doi.org/10.1063/1.1654189 (3 pages) | Cited 59 times

Online Publication Date: 22 October 2003

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A new design principle is described which allows construction of mirrors that are of reasonable reflectivity (R>25%) in the extreme ultraviolet (λ = 50 to 500 Å). The measured performance of a first mirror for the near uv using this design principle is given.

Rayleigh‐Wave Electromechanical Coupling Constants

M. B. Schulz and J. H. Matsinger

Appl. Phys. Lett. 20, 367 (1972); http://dx.doi.org/10.1063/1.1654190 (3 pages) | Cited 14 times

Online Publication Date: 22 October 2003

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The relative change in surface‐acoustic‐wave velocity, Δν∕ν∞, caused by a thin conducting film on the surface, has been measured for several orientations of LiNbO3, quartz, LiTaO3, Bi12GeO20, and ZnO. This measurement was accomplished by monitoring the phase shift of surface‐wave delay lines as an aluminum film was vacuum deposited onto the propagation path. Less than 100‐Å‐thick films completely short circuited the surface electric field. From the results, new more accurate values of surface‐wave coupling constants are derived.

Novel Technique for Real‐Time Depth‐Gated Acoustic Image Holography

R. L. Whitman, A. Korpel, and M. Ahmed

Appl. Phys. Lett. 20, 370 (1972); http://dx.doi.org/10.1063/1.1654191 (2 pages) | Cited 2 times

Online Publication Date: 22 October 2003

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An acoustic camera, which uses a scanning laser beam to detect an ultrasonic image, has been modified to incorporate the desirable depth‐discrimination feature characteristic of pulse‐echo techniques. The resultant system combines the virtues of acoustic holography with those of the pulse‐echo method. It produces a real‐time image hologram of a 2.268‐MHz acoustic field with the transverse resolution characteristic of imaging (approximately three wavelengths or 2 mm), and the depth resolution of the pulse‐echo technique (1–10 mm depending on the acoustic pulse length). The pulsing and gating action of the system prevents (1) image degradation due to too many out‐of‐focus cross sections, typical in imaging systems, and (2) most of the multiple reflection artifacts, typical in pulse‐echo systems. Moreover, average acoustic power requirements for signal‐to‐noise considerations are lowered from the cw case by the pulse‐duty factor.
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Erratum: Electric‐Discharge Gas‐Dynamic Laser

Tehmau Kan, Joseph A. Stregack, and William S. Watt

Appl. Phys. Lett. 20, 372 (1972); http://dx.doi.org/10.1063/1.1654192 (1 page)

Online Publication Date: 22 October 2003

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