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15 Jul 1972

Volume 21, Issue 2, pp. 47-76


Calculation of thermal diffusivity from measurements with the sine wave modulation method: modification of Cowan's equations

R. Penninckx

Appl. Phys. Lett. 21, 47 (1972); http://dx.doi.org/10.1063/1.1654272 (2 pages) | Cited 3 times

Online Publication Date: 16 October 2003

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Cowan's equations have been replaced by an equation giving the thermal diffusivity α of a thin plate uniquely as a function of the measured quantities Δ and δ0, Δ being the phase difference between the temperature variations at the two faces of the slab and δ0 the phase difference between the modulated heating beam and the nonheated face. A very simple approximate equation is also proposed for Δ>1.

Solid‐state self‐focusing surface waveguide (microguide)

Jun‐ichi Nishizawa and Akira Otsuka

Appl. Phys. Lett. 21, 48 (1972); http://dx.doi.org/10.1063/1.1654273 (3 pages) | Cited 4 times

Online Publication Date: 16 October 2003

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A thin‐film optical waveguide with self‐focusing caused by controlled distribution in the thickness was made of nitrocellulose and suspended in air. Undulation of the guided light beam was observed in the film, as well as in the self‐focusing optical fiber, when a He☒Ne laser beam was injected at a place apart from the thickest center of the film. From this experiment, it has been shown that the transverse focusing effect in thin‐film optical‐wave transmission is obtained by the distribution in thickness of the film.

Charge storage of acoustic rf signals

A.G. Bert, B. Epsztein, and G. Kantorowicz

Appl. Phys. Lett. 21, 50 (1972); http://dx.doi.org/10.1063/1.1654274 (3 pages) | Cited 2 times

Online Publication Date: 16 October 2003

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A method is described which allows the recording of an rf signal and its restoration at any time after a few microseconds following the writing. Once the signal is converted into a surface elastic wave on a piezoelectric substrate, an electron beam impinges upon the surface during a short time. A charge‐stored image of the signal is realized by the secondary electrons. Reading is achieved by means of a second current pulse which erases the surface charge distribution, exciting two elastic waves. One of them is the time‐inverted image of the signal. An attenuation of 63 dB has been measured at 30 MHz on quartz after a storage time of about 1 min.

Optoacoustic properties of thallium arsenic sulphide, Tl3AsS4

G.W. Roland, M. Gottlieb, and J.D. Feichtner

Appl. Phys. Lett. 21, 52 (1972); http://dx.doi.org/10.1063/1.1654275 (3 pages) | Cited 8 times

Online Publication Date: 16 October 2003

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We report on the growth and the measurement of optical and optoacoustic properties of Tl3AsS4, a new single‐crystal sulfosalt material. It is transparent from 0.6 to 12 μm, has an optoacoustic figure of merit (relative to fused silica) of over 500 (at 0.6328 μm), and rather low acoustic losses.

Admittance spectroscopy of deep impurity levels: ZnTe Schottky barriers

D.L. Losee

Appl. Phys. Lett. 21, 54 (1972); http://dx.doi.org/10.1063/1.1654276 (3 pages) | Cited 46 times

Online Publication Date: 16 October 2003

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A new method of deep‐level spectroscopy is demonstrated on ZnTe Schottky‐barrier diodes. Peaks in conductance measured as a function of temperature and frequency yield level depths and capture coefficients. A small‐signal theory is developed for numerical comparison to capacitance data, yielding level types and densities.

Energy transfer from Tl+ to Gd3+ in inorganic glasses

Renata Reisfeld and Sh. Morag

Appl. Phys. Lett. 21, 57 (1972); http://dx.doi.org/10.1063/1.1654277 (2 pages) | Cited 8 times

Online Publication Date: 16 October 2003

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Energy transfer from Tl+ to Gd3+ is reported in borax and phosphate glass. It was found that the 6P7∕28S7∕2 fluorescence of gadolinium could be increased manyfold when excited through 1S03P1 absorption of Tl+. It is suggested that the energy from the thallium ion is transferred directly to the 6P7∕2 state of gadolinium.

Enhancement of self‐focusing threshold in sapphire with elliptical beams

C.R. Giuliano, J.H. Marburger, and A. Yariv

Appl. Phys. Lett. 21, 58 (1972); http://dx.doi.org/10.1063/1.1654278 (3 pages) | Cited 21 times

Online Publication Date: 16 October 2003

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The power threshold for optically induced bulk damage in sapphire is a sensitive function of the ellipticity of the incident beam shape. Experimental results are consistent with a simple self‐focusing theory.

Observation of the inverse Lamb dip for infrared‐microwave two‐photon transitions

S.M. Freund and T. Oka

Appl. Phys. Lett. 21, 60 (1972); http://dx.doi.org/10.1063/1.1654279 (3 pages) | Cited 18 times

Online Publication Date: 16 October 2003

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An inverse Lamb dip has been observed for infrared‐microwave two‐photon transitions in 14NH3 and 15NH3. The signal was sufficiently strong to be observed on an oscilloscope with a detector time constant of 3 msec. The observations establish a method of measuring differences between laser frequencies and molecular absorption frequencies with high accuracy even if this absorption is outside of the tuning range of the laser lines. A double resonance experiment involving the two‐photon inverse Lamb dip has also been conducted.

cw gas breakdown in argon using 10.6‐μm laser radiation

Douglas L. Franzen

Appl. Phys. Lett. 21, 62 (1972); http://dx.doi.org/10.1063/1.1654280 (3 pages) | Cited 11 times

Online Publication Date: 16 October 2003

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A very intense gas breakdown spark has been extended to a continuous arc in argon using a focused cw CO2 laser. To achieve cw breakdown, the focal volume of a mirror focusing a high‐power CO2 laser was preionized by a single pulse from a CO2 TEA laser. The electron density created by the pulsed laser is sufficient to start the cw plasma. This letter reports accurate measurements of pulsed thresholds as well as preionized cw thresholds for breakdown in argon. Also, a study of the time development of the cw plasma is presented.

Measurement of surface contamination using oxygen‐ion‐induced x rays

M.J. Saltmarsh, A. van der Woude, and C.A. Ludemann

Appl. Phys. Lett. 21, 64 (1972); http://dx.doi.org/10.1063/1.1654281 (4 pages) | Cited 4 times

Online Publication Date: 16 October 2003

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X rays induced by 20‐MeV oxygen ions have been used to search for trace quantities of lanthanum on the surface of a NaCl crystal. The results demonstrate the sensitivity of the method to small quantities of heavy elements present on low‐Z matrices.

Growth mechanism of polycrystalline β‐SiC layers on silicon substrate

J. Graul and E. Wagner

Appl. Phys. Lett. 21, 67 (1972); http://dx.doi.org/10.1063/1.1654282 (3 pages) | Cited 21 times

Online Publication Date: 16 October 2003

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The surface of monocrystalline silicon was chemically converted with hydrocarbon to polycrystalline β‐silicon carbide, and the growth mechanism was investigated by means of 14C tracer method. It is shown that the growth of the silicon carbide layer is due to diffusion of silicon through the SiC layer so that the Si☒SiC conversion is taking place at the surface of the sample. Dependence of layer thickness on carbidizing time and on hydrocarbon concentration in the carrier gas hydrogen was measured.

Influence of carrier diffusion on the intrinsic response time of semiconductor avalanches

R. Hulin and J.J. Goedbloed

Appl. Phys. Lett. 21, 69 (1972); http://dx.doi.org/10.1063/1.1654283 (3 pages) | Cited 4 times

Online Publication Date: 16 October 2003

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The intrinsic response time τi of semiconductor avalanches has been determined from microwave measurements on Si, Ge, and GaAs IMPATT diodes of various structures (n+‐p, p+‐n, Schottky barrier). A theory has been developed to calculate τi for these diodes. It was found that the effect of carrier diffusion has to be taken into account to remove a systematic discrepancy between experimental and theoretical values of τi. For Si the value of the average high‐field diffusion constant D=80 cm2∕sec for E=400 kV∕cm, taken from the literature, could be used satisfactorily. For Ge and GaAs, where no information on D is available, D=100 cm2∕sec for E=200 kV∕cm and D=250 cm2∕sec for E=400 kV∕cm, respectively, had to be chosen to explain the experimental values of τi.

Ion bombardment fabrication of optical waveguides using electron resist masks

J.E. Goell, R.D. Standley, W.M. Gibson, and J.W. Rodgers

Appl. Phys. Lett. 21, 72 (1972); http://dx.doi.org/10.1063/1.1654284 (2 pages) | Cited 11 times

Online Publication Date: 16 October 2003

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Fabrication of a circular strip waveguide by ion implantation of fused silica through a mask made by electron‐beam exposure of polymethylmethacrylate (PMMA) is described. This technique has an advantage in its simplicity and the small number of processing steps involved. Guidance of 0.6328‐μm light from a He☒Ne laser through the guide is demonstrated.

Acoustic modulation of light by nematic liquid crystals

M. Bertolotti, S. Martellucci, F. Scudieri, and D. Sette

Appl. Phys. Lett. 21, 74 (1972); http://dx.doi.org/10.1063/1.1654285 (2 pages) | Cited 11 times

Online Publication Date: 16 October 2003

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An acoustic modulator using a liquid crystal and a piezoelectric driver is described. The response time of the modulator is less than the time needed for the onset of mechanical stress. Actually it is governed only by the electromechanical properties of the piezoelectric driver used.
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Erratum: Nonlinear susceptibility of GaP; relative measurement and use of measured values to determine a better absolute value

B.F. Levine and C.G. Bethea

Appl. Phys. Lett. 21, 76 (1972); http://dx.doi.org/10.1063/1.1654286 (1 page)

Online Publication Date: 16 October 2003

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