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15 Aug 1972

Volume 21, Issue 4, pp. 121-180

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Magnesium gallate spinel: a substrate for the direct liquid‐phase epitaxial growth of (Ga,Al)As

B.A. Scott, K.H. Nichols, R.M. Potemski, and J.M. Woodall

Appl. Phys. Lett. 21, 121 (1972); http://dx.doi.org/10.1063/1.1654307 (2 pages) | Cited 2 times

Online Publication Date: 16 October 2003

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The single‐crystal growth of the cubic spinel, MgGa2O4, by the Czochralski technique is reported. Moreover, experiments are described in which this material is used as a substrate for the first direct (single‐step) liquid‐phase epitaxial growth of 〈111〉 (Ga,Al)As.

Radiation from a beam of modulated electrons. II

C. Becchi and G. Morpurgo

Appl. Phys. Lett. 21, 123 (1972); http://dx.doi.org/10.1063/1.1654308 (2 pages) | Cited 2 times

Online Publication Date: 16 October 2003

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It is discussed in detail why a result by Van Zandt and an implication by Schwarz (that the magnitude of the Schwarz‐Hora effect can be linear in the electron current) are incorrect. The large discrepancy noted in an earlier paper between the expected magnitude of the effect and the value which Schwarz claims to have measured thus persists.

Effect of uniaxial pressure on the threshold current of double‐heterostructure GaAs lasers

J.E. Ripper, Navin B. Patel, and P. Brosson

Appl. Phys. Lett. 21, 124 (1972); http://dx.doi.org/10.1063/1.1654309 (2 pages) | Cited 11 times

Online Publication Date: 16 October 2003

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On application of uniaxial pressure perpendicular to the junction, the threshold current of GaAs double‐heterostructure injection lasers at room temperature is observed to increase to a certain critical pressure P0, and then decrease with further increase in pressure. A flip of the polarization of laser light occurs at P0. This behavior can be explained using a model previously proposed to explain the reduction in threshold of homostructure GaAs lasers upon application of uniaxial pressure.

Dynamic scattering life in the nematic compound p‐methoxybenzylidene‐p′‐amino phenyl acetate as influenced by current density

Alan Sussman

Appl. Phys. Lett. 21, 126 (1972); http://dx.doi.org/10.1063/1.1654310 (2 pages) | Cited 9 times

Online Publication Date: 16 October 2003

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The time to failure of a compound exhibiting dynamic scattering, operated under dc excitation, is shown to be inversely proportional to current density. Two failure modes have been observed, both related to an anodic electrochemical reaction. Failure occurs in the compound p‐methoxybenzylidene‐p′‐amino phenyl acetate (APAPA) after the passage of 1.2 × 106 C∕mole through the operating cell. The quantity of charge passed through, in C∕mole of cell material, is recommended as a figure of merit for materials which fail due to electrochemical processes.

Lateral spread of boron ions implanted in silicon

Youichi Akasaka, Kazuo Horie, and Satoru Kawazu

Appl. Phys. Lett. 21, 128 (1972); http://dx.doi.org/10.1063/1.1654311 (2 pages) | Cited 12 times

Online Publication Date: 16 October 2003

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The lateral spread of implanted ions is measured in boron‐implanted silicon by junction delineation. The maximum lateral spread of a p‐type region from a mask edge is about half the junction depth. Typical values are 0.4–0.6 μ in n‐type substrates of 0.1 Ω cm at an implantation energy in the range 75–250 keV with the dose level of 1×1015∕cm2, or at 150 keV with the dose in the range 1×1014–5×1015∕cm2. These experimental values are well interpreted by the theory in which the lateral spread is expressed as a complementary error function with the standard deviation calculated by the LSS theory.

Stimulated parametric fluorescence induced by picosecond pump pulses

T.A. Rabson, H.J. Ruiz, P.L. Shah, and F.K. Tittel

Appl. Phys. Lett. 21, 129 (1972); http://dx.doi.org/10.1063/1.1654312 (3 pages) | Cited 9 times

Online Publication Date: 16 October 2003

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Stimulated parametric fluorescence emission tunable over the range from 0.96 to 1.16 μ has been obtained using a barium sodium niobate crystal pumped by a frequency‐doubled and mode‐locked Nd3+:glass laser. The pump radiation in the form of a train of picosecond pulses produced infrared parametric fluorescence pulses, less than 10 psec in duration and with average peak powers on the order of 300 W when pumped with a power density of 300 MW∕cm2.

High‐resolution spectroscopy using magnetic‐field‐tuned semiconductor lasers

K.W. Nill, F.A. Blum, A.R. Calawa, and T.C. Harman

Appl. Phys. Lett. 21, 132 (1972); http://dx.doi.org/10.1063/1.1654313 (3 pages) | Cited 11 times

Online Publication Date: 16 October 2003

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Tunable laser spectroscopy measurements on low‐pressure gases have been performed using magnetic‐field‐tuned lead‐salt semiconductor diode lasers in the 4‐ to 7‐μm region. Use of magnetic field tuning in conjunction with the conventional current tuning is shown to significantly increase the versatility of diode lasers in high‐resolution spectroscopy. Details of the tuning characteristics for fields up to 90 kG are presented.

A concept for the generation of reproducible and controllable giant pulses

P. Baues, U.v. Hundelshausen, and P. Möckel

Appl. Phys. Lett. 21, 135 (1972); http://dx.doi.org/10.1063/1.1654314 (3 pages) | Cited 2 times

Online Publication Date: 16 October 2003

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A YAG: Nd laser system is described which supplies giant pulses which are within 3% constant in shape and size and do not depend on the pump energy and the shape of the pumping pulses. A LiNbO3 crystal cut at the Brewster angle is used as a Q switch. Since the oscillation of the laser in the off state is used to open the Q switch, a definite inversion always occurs within the laser rod at the instant the switch opens that is due to the threshold of the off state and depends solely on the cavity characteristics. The height of the giant pulses is moreover easily controlled by varying the voltage applied to the LiNbO3 crystal.

Annealing study of ion‐implanted silicon by photoelectromagnetic method

Taroh Inada, Yasuhide Ohnuki, and Hidetaroh Nishimura

Appl. Phys. Lett. 21, 137 (1972); http://dx.doi.org/10.1063/1.1654315 (3 pages) | Cited 1 time

Online Publication Date: 16 October 2003

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The photoelectromagnetic effect (PEM effect) on indium‐implanted silicon was examined as a function of ion dose in the range 1014–1015 ions∕cm2 and as a function of annealing up to 800°C. The experimental results indicated that the measurements of the PEM voltage can be utilized as a means of detecting changes in lattice ordering in ion‐implanted silicon that were caused by the annealing treatment. Combining the results of the PEM voltage measurements with those of electron diffraction examinations, it was found that crystal reordering in In‐implanted silicon by postannealing occurred from an inward part of the host crystal rather than from the ion‐implanted surface.

Phase‐matchable nonlinear optical interactions in periodic thin films

Sasson Somekh and Amnon Yariv

Appl. Phys. Lett. 21, 140 (1972); http://dx.doi.org/10.1063/1.1654316 (2 pages) | Cited 35 times

Online Publication Date: 16 October 2003

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A proposal for a new method of phase matching in nonlinear optical interactions is made. A periodic perturbation of the surface of a thin‐film waveguide generates space harmonics with new propagation constants which can be phase matched. An analysis of this proposal shows it to be particularly interesting for a class of thin‐film nonlinear devices using the cubic optically isotropic semiconductors (such as GaAs, GaP, etc.) which possess high nonlinear optical coefficients but are not phase matchable by the conventional birefringent techniques.

Effect of charge‐transfer acceptors on dynamic scattering in a nematic liquid crystal

A.I. Baise, I. Teucher, and M.M. Labes

Appl. Phys. Lett. 21, 142 (1972); http://dx.doi.org/10.1063/1.1654317 (2 pages) | Cited 14 times

Online Publication Date: 16 October 2003

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The addition of charge‐transfer acceptors to a nematic liquid crystal at concentrations <0.1% has a profound effect on the voltage‐transmission characteristics for dynamic scattering, reducing the threshold voltage by a factor of 2 for dc fields, but not appreciably altering the ac behavior. Charge‐transfer bands in the visible may be introduced that depend on the concentration and nature of the acceptor molecule employed.

Prism‐dye laser

S. Chandra, N. Takeuchi, and S.R. Hartmann

Appl. Phys. Lett. 21, 144 (1972); http://dx.doi.org/10.1063/1.1654318 (3 pages) | Cited 29 times

Online Publication Date: 16 October 2003

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A simple continuously tunable laser‐pumped dye laser is described. A dye solution in contact with a lateral face of a right‐triangular 90° prism, adjacent to the 90° corner, is pumped by laser light incident on the lateral face opposite to the 90° corner. A standing‐wave pump field is produced in the dye solution by the interference between the pump light that passes directly to the inner face in contact with the dye solution and the pump light internally reflected from the other lateral face adjacent to the 90° corner. The output wave‐length is determined by the spatial periodicity of the standing‐wave field and is easily varied by changing the angle of incidence between the pump‐laser beam and the prism face.

Acoustic‐surface‐wave convolver using nonlinear interaction in a coupled PZT‐Si system

M. Yamanishi, T. Kawamura, and Y. Nakayama

Appl. Phys. Lett. 21, 146 (1972); http://dx.doi.org/10.1063/1.1654319 (3 pages) | Cited 10 times

Online Publication Date: 16 October 2003

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Efficient acoustic‐surface‐wave convolution, using 14.5‐MHz Bleustein‐Gulyaev waves, has been observed in a coupled PZT‐Si system. It has been found that the magnitude of the phenomenological nonlinear coupling constant of the convolver was four times as large as that of the basal plane of PZT‐8. The convolution output was controlled by the application of a voltage of several tens of volts.

Interacting Bloch lines: a new mechanism for wall energy in bubble domain materials

A.P. Malozemoff

Appl. Phys. Lett. 21, 149 (1972); http://dx.doi.org/10.1063/1.1654320 (2 pages) | Cited 17 times

Online Publication Date: 16 October 2003

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The energy of an isolated vertical Bloch line in high‐Q bubble materials is only a small fraction of the total wall energy. However, if there are so many Bloch lines along a domain wall that they are constrained to lie close to each other, their exchange energy becomes large. Calculations including this energy show qualitative agreement with the anomalous dependence of dimensions on bias field in certain bubbles and stripes in garnet films.

Average energy to form electron‐hole pairs in GaP diodes with alpha particles

T. Kobayashi

Appl. Phys. Lett. 21, 150 (1972); http://dx.doi.org/10.1063/1.1654321 (3 pages) | Cited 15 times

Online Publication Date: 16 October 2003

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The energy required to form an electron‐hole pair in gallium phosphide has been measured using GaP p‐n junction diodes made from high‐purity‐level GaP materials. The values of ϵGaP for several GaP diodes for alpha particles ranged from 6.35 to 6.75 eV, with an average value of 6.54 ± 0.13 eV at 300°K. This value is smaller than that obtained by Goldstein and is very close to the value of 6.56 eV calculated from the experimental relationship ϵ = 2.596Eg + 0.714 (eV), which was derived previously from the experimental values of ϵ for Ge, Si, GaAs, and CdTe.

Convolution of signals using surface‐wave delay lines

P. Das, M.N. Araghi, and W.C. Wang

Appl. Phys. Lett. 21, 152 (1972); http://dx.doi.org/10.1063/1.1654322 (3 pages) | Cited 10 times

Online Publication Date: 16 October 2003

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Detection of the convolution of two signals which is produced by the surface‐wave nonlinearities is possible by employing several different methods. These methods, some of which are new and more efficient, are discussed, and a general explanation applicable to all cases is proposed.

Effect of magnetic field on current filament in gold‐doped silicon

K. Homma, Y. Kobayashi, and T. Fukami

Appl. Phys. Lett. 21, 154 (1972); http://dx.doi.org/10.1063/1.1654323 (3 pages) | Cited 3 times

Online Publication Date: 16 October 2003

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The behavior of a current filament in a gold‐doped p+‐n Si diode was studied under a transverse magnetic field. The probe technique of electric potential was applied to measure the current distribution of the filament. By the action of the magnetic field, the filament was deformed and deflected toward one side of the diode. Moreover, a new ``filament instability'' which generates oscillation phenomena in the diode was observed.

Measurement of trapped‐minority‐carrier thermal emission rates from Au, Ag, and Co traps in silicon

L.D. Yau and C.T. Sah

Appl. Phys. Lett. 21, 157 (1972); http://dx.doi.org/10.1063/1.1654324 (2 pages) | Cited 21 times

Online Publication Date: 16 October 2003

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A new technique for measuring thermal emission rates of trapped minority carriers is experimentally demonstrated in reverse‐biased n+p silicon diodes doped with gold, silver, and cobalt. It makes use of a monochromatic light of a proper photon energy to partially fill the traps with minority carriers (electrons). After the light is turned off, the thermal emission rates of the minority carriers are observed. A unique feature is that the thermal emission rates for both the minority and majority carrier traps can be accurately determined in just one p‐n junction, of either a p+n or n+p type.

NaYF4 : Yb,Er—an efficient upconversion phosphor

N. Menyuk, K. Dwight, and J.W. Pierce

Appl. Phys. Lett. 21, 159 (1972); http://dx.doi.org/10.1063/1.1654325 (3 pages) | Cited 69 times

Online Publication Date: 16 October 2003

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Studies of the infrared‐pumped visible luminescence of NaYF4 : Yb, Er show it to have at least twice the visible output of YF3 : Yb, Er when pumped with a narrow‐band excitation source at the optimum frequency. It is also free from saturation effects until very intense excitation levels are reached. The mechanism for red upconversion appears to change with increasing excitation from a two‐step process to one involving a significant amount of three‐step upconversion, which change is accompanied by an increase in the response time for visible emissions.

Determination of TN for KNiF3 through elastic, magneto‐optical, and heat capacity measurements

J. Nouet, A. Zarembowitch, R. V. Pisarev, J. Ferre, and M. Lecomte

Appl. Phys. Lett. 21, 161 (1972); http://dx.doi.org/10.1063/1.1654326 (2 pages) | Cited 9 times

Online Publication Date: 16 October 2003

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Ultrasonic resonance, stress‐induced linear dichroism, and heat capacity measurements are used in an accurate determination of the Néel temperature of the cubic antiferromagnet KNiF3. All three techniques give a value of 246 ± 1°K for TN.

Study of spectral broadening in a filament of light

George K.L. Wong and Y.R. Shen

Appl. Phys. Lett. 21, 163 (1972); http://dx.doi.org/10.1063/1.1654327 (3 pages) | Cited 9 times

Online Publication Date: 16 October 2003

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We have measured with nanosecond laser pulses the spectral broadening of light emitted from a filament under controlled input conditions. Our results are in semiquantitative agreement with predictions from the moving‐focus model.

Observations of Zeeman effect in the optical spectra of fast ion beams

John O. Stoner and Leon J. Radziemski

Appl. Phys. Lett. 21, 165 (1972); http://dx.doi.org/10.1063/1.1654328 (2 pages) | Cited 4 times

Online Publication Date: 16 October 2003

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We have observed splittings between the σ+ and σ− groups of components of optical lines emitted by fast beams of Ar+ and O+ [v∕c = (3.2−4.2) × 10−3] in a magnetic field of 13 800 G. In order to observe these separations, which were of the order of 0.2–0.3 Å, it was necessary to reduce the recorded widths of spectral lines by refocusing the spectrometer and by exciting the beam in a gas target.

Gas breakdown in the laser as the limitation of pulsed high‐pressure CO2 lasers

Paul J. Berger and David C. Smith

Appl. Phys. Lett. 21, 167 (1972); http://dx.doi.org/10.1063/1.1654329 (4 pages) | Cited 10 times

Online Publication Date: 16 October 2003

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Gas breakdown, ionization of a gas by laser radiation, sets an upper limit on the operating pressure of pulsed CO2 lasers. The breakdown threshold decreases with increasing pressure, whereas the saturation energy of the laser increases with pressure. These two competing effects lead to the prediction of a maximum operating pressure above which the energy stored in the laser cannot be extracted without initiating gas breakdown. Gas‐breakdown‐threshold measurements have been made in typical laser mixtures, and breakdown has also been observed inside the laser cavity of an atmospheric‐pressure CO2 laser. Based on these measurements and previously reported saturation measurements, the upper limit for efficient use of CO2 lasers is predicted to be in the range of 2–4 atm.

Gunn effect threshold and domain formation in transverse magnetic fields in indium antimonide

H. Heinrich and W. Keeler

Appl. Phys. Lett. 21, 171 (1972); http://dx.doi.org/10.1063/1.1654330 (2 pages) | Cited 7 times

Online Publication Date: 16 October 2003

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The potential has been probed on n‐type InSb bar samples at nanosecond time scales, both with and without an applied magnetic field. In a transverse magnetic field, nucleation of a traveling domain occurs at the side of the cathode where the electric field is high due to Hall field shorting. The results explain the strong reduction of Gunn effect threshold in a magnetic field.

Thin film surface orientation for liquid crystals

John L. Janning

Appl. Phys. Lett. 21, 173 (1972); http://dx.doi.org/10.1063/1.1654331 (2 pages) | Cited 152 times

Online Publication Date: 16 October 2003

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Vacuum‐deposited films now replace the familiar ``rubbing'' process in substrate preparation for liquid‐crystal cells. Films deposited at an angle provide an oriented surface for alignment of nematic liquid crystals far better than the well‐known ``rubbed'' plate. The oblique deposit causes a film growth in a preferred direction, which results in a ``sympathetic alignment'' of the nematic liquid crystals when applied.
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