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1 Oct 1972

Volume 21, Issue 7, pp. 301-335


Evanescent‐field‐pumped dye laser

E.P. Ippen and C.V. Shank

Appl. Phys. Lett. 21, 301 (1972); http://dx.doi.org/10.1063/1.1654386 (2 pages) | Cited 18 times

Online Publication Date: 16 October 2003

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A new dye laser pumping scheme is described in which molecules lying external to a waveguiding film are excited via evanescent fields from an optical pump contained in a waveguide. The excited molecules lying close to the surface then emit into a waveguide mode. An experiment is performed in which Rhodamine 6G in benzyl‐alcohol glycerol mixtures is excited by an optical evanescent field contained in a waveguiding film.

Collisional narrowing of infrared water‐vapor transitions

R.S. Eng, A.R. Calawa, T.C. Harman, P.L. Kelley, and A. Javan

Appl. Phys. Lett. 21, 303 (1972); http://dx.doi.org/10.1063/1.1654387 (3 pages) | Cited 52 times

Online Publication Date: 16 October 2003

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Water‐vapor absorption lines in the ν2 band involving transitions between states of high rotational energy have been found to undergo substantial collisional narrowing in the presence of buffer gases. Measurements were carried out near 5.35 μm, using tunable lead sulfide selenide semiconductor diode lasers.

Densities of amorphous Si films by nuclear backscattering

M.H. Brodsky, D. Kaplan, and J.F. Ziegler

Appl. Phys. Lett. 21, 305 (1972); http://dx.doi.org/10.1063/1.1654388 (3 pages) | Cited 34 times

Online Publication Date: 16 October 2003

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The backscattering of 2500‐keV alpha particles is used to measure the densities of amorphous Si films. The density of amorphous Si is found to be inversely proportional to the electron spin resonance signals. The extrapolated density at zero spins is equal to 1.01 ± 0.02 times that of crystalline Si. The highest density achieved in a real amorphous film was 0.97 ± 0.02 times the crystalline density.

Interdigital electro‐optic thin‐film modulator

John N. Polky and Jay H. Harris

Appl. Phys. Lett. 21, 307 (1972); http://dx.doi.org/10.1063/1.1654389 (3 pages) | Cited 15 times

Online Publication Date: 16 October 2003

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An integrated optical modulator is presented that achieved 50% depth of modulation. A double‐ended coupling prism allowed nitrobenzene to be used as the waveguide material. Also, an approximate theory of operation is developed.

Thin birefringent polymer films for integrated optics

T.P. Sosnowski and H.P. Weber

Appl. Phys. Lett. 21, 310 (1972); http://dx.doi.org/10.1063/1.1654390 (2 pages) | Cited 24 times

Online Publication Date: 16 October 2003

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The fabrication of low‐loss (0.1 dB∕cm) thin birefringent polymer films on glass substrates is reported. A birefringence of 4.7 × 10−3 was measured in polystyrene. In such films, TE and TM modes can be made degenerate by controlling the film thickness. Degeneracy over distances of up to 3 cm was achieved. Such guides may simplify the construction of modulators and other devices requiring degenerate mode operation.

Optical damage in KTN

S.R. King, T.S. Hartwick, and A.B. Chase

Appl. Phys. Lett. 21, 312 (1972); http://dx.doi.org/10.1063/1.1654391 (3 pages) | Cited 6 times

Online Publication Date: 16 October 2003

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An analysis of light‐induced refractive‐index changes (``optical damage'') has been carried out for paraelectric electro‐optic crystals. The results are compared with experimental data taken on several KTN crystals. Both the spatial extent and temporal variations of optical damage are accurately determined by the theory for all crystals tested. The rate at which optical damage occurs can be used to determine the product of absorption, mobility, and lifetime for the material.

High‐performance photon drag detector for a CO2 laser using p‐type tellurium

S. Panyakeow, J. Shirafuji, and Y. Inuishi

Appl. Phys. Lett. 21, 314 (1972); http://dx.doi.org/10.1063/1.1654392 (3 pages) | Cited 5 times

Online Publication Date: 16 October 2003

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A photon drag detector with high sensitivity at 10.6‐μ radiation from a Q‐switched CO2 laser was developed by using p‐type tellurium. The observed value of the photon drag signal at 77 K was as high as 5 mV on a 5‐mm‐long sample, perpendicular to the c axis, when the peak intensity of the incident laser pulse was 1 kW. The photon drag effect is dominantly generated by light holes, so that the polarity of the induced voltage is consistent with that expected on the basis of momentum transfer from photons to holes. There was observed no polarity change over a temperature range in the present experiment, in contrast to p‐type germanium. The momentum relaxation time in the light hole band was estimated to be about 10−14 sec.

Cs☒O negative‐electron‐affinity surfaces on silicon

J.R. Howorth, R. Holtom, A.L. Harmer, and E.W. Trawny

Appl. Phys. Lett. 21, 316 (1972); http://dx.doi.org/10.1063/1.1654393 (2 pages) | Cited 5 times

Online Publication Date: 16 October 2003

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The thickness of cesium and oxygen deposits required to produce negative electron affinity on semiconductors is not clear from published data. Photoemission measurements show that, for heavily doped p‐type silicon, negative electron affinity can be achieved with either monolayer or thick deposits of cesium and oxygen, whereas deposits of intermediate thickness are less effective. The results also show that for silicon the lowest effective work function can be achieved by monolayer activation.

Quenching of laser dye fluorescence by absorption from an excited singlet state

Irwin Wieder

Appl. Phys. Lett. 21, 318 (1972); http://dx.doi.org/10.1063/1.1654394 (3 pages) | Cited 23 times

Online Publication Date: 16 October 2003

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Quenching of fluorescence of common laser dyes is observed and measured as a function of the intensity of an excitation pulse at 3371 Å and the concentration of the dye. The observed effects can be explained by a model where there are sequential absorptions of pump radiation from the ground state and first excited singlet state followed by a radiationless decay, and where molecules can be cycled many times during each excitation pulse.

Molecular‐beam‐stabilized argon laser

T.J. Ryan, D.G. Youmans, L.A. Hackel, and S. Ezekiel

Appl. Phys. Lett. 21, 320 (1972); http://dx.doi.org/10.1063/1.1654395 (3 pages) | Cited 18 times

Online Publication Date: 16 October 2003

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The frequency of a 5145‐Å argon‐ion laser has been locked to an absorption line in a molecular beam of I2. The drift of the laser frequency was less than 20 kHz or Δν∕ν<3 × 10−11 for the duration of a run which lasted about 20 min. A molecular‐beam external reference is attractive because transitions observed in the isolated conditions in the beam do not suffer shifts due to collisions or collisional broadening and, if the molecular beam is excited orthogonally, Doppler broadening can be virtually eliminated.

Steering acoustic surface waves by nonlinear mixing

K.L. Davis and V.L. Newhouse

Appl. Phys. Lett. 21, 323 (1972); http://dx.doi.org/10.1063/1.1654396 (3 pages) | Cited 6 times

Online Publication Date: 16 October 2003

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We report the generation of difference‐frequency acoustic surface waves by the nonlinear interaction of intersecting noncollinear surface‐wave beams on [111]‐cut bismuth germanium oxide, a material of suitable anisotropy. The wave vector of the mixed‐frequency beam can be steered over a range of angles by varying the frequency ratio of the input beams. Agreement with a coupled‐mode theory is found. It is pointed out that the effect makes a number of new surface‐wave devices possible.

Optical waveguides by diffusion in II‐VI compounds

W.E. Martin and D.B. Hall

Appl. Phys. Lett. 21, 325 (1972); http://dx.doi.org/10.1063/1.1654397 (3 pages) | Cited 19 times

Online Publication Date: 16 October 2003

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Planar optical waveguides have been made by sealed ampoule diffusion of Cd and Se into ZnS and Cd into ZnSe. Three‐dimensional diffused guides of Cd‐diffused ZnSe have been made by using a masking layer of evaporated oxidized SiO, which was shadowed with silica or glass fibers or copper wire. Structures 50 and 160 μm wide and 10 μm deep with severely etched surfaces yielded losses of 10 dB∕cm. Suppression of thermal etching in small‐index‐gradient guides 10 μm wide by 3 μm deep gave losses of less than 3 dB∕cm.

High‐power effects in nonlinear optical waveguides

S. Zemon, R.R. Alfano, S.L. Shapiro, and E. Conwell

Appl. Phys. Lett. 21, 327 (1972); http://dx.doi.org/10.1063/1.1654398 (3 pages) | Cited 13 times

Online Publication Date: 16 October 2003

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ZnO optical waveguides have been found to withstand power fluxes up to 1011 W∕cm2 in pico‐second pulses before damage occurred. Under the high power, a TE0 mode at 1.06 μm generated a TM1 mode at 0.53 μm. A ray theory of second‐harmonic generation in waveguides has been developed and the experimental results are compared with it.

Determination of deep energy levels in Si by MOS techniques

W. Fahrner and A. Goetzberger

Appl. Phys. Lett. 21, 329 (1972); http://dx.doi.org/10.1063/1.1654399 (3 pages) | Cited 50 times

Online Publication Date: 16 October 2003

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See Also: Erratum

Show Abstract
Ions are implanted into a Si☒SiO2 interface. If the distribution is several hundred angstroms wide, the ions create interface states at energies corresponding to their bulk levels. With most elements investigated, agreement with previous data is good. Energy levels of the elements Se, Be, Cd, Sn, Ti, Pb, S, C, Ba, Ta, V, Mn, Cs, and Ge were determined by the MOS technique.

Direct determination of Hall mobility of photoelectrons in the ferromagnetic semiconductor EuO

Koji Kajita and Taizo Masumi

Appl. Phys. Lett. 21, 332 (1972); http://dx.doi.org/10.1063/1.1654400 (3 pages) | Cited 3 times

Online Publication Date: 16 October 2003

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The importance of applying the pulsed Redfield technique in the direct determination of the Hall mobility μH of photocarriers in ferromagnetic semiconductors is exemplified, for the first time, by using pure EuO crystals. The value of μH is obtained directly from the measurement of the Hall angle θ = μHB∕c, where B is the magnetic induction and c is the light velocity. Thus, it is shown that a large negative‐magnetoresistance effect in undoped EuO crystals near the Curie temperature Tc can be attributed mainly to the mobility change. The photocarriers are identified to be electrons, and a mobility value as high as 250 cm2∕V sec is observed at 26 °K.

Energy losses of hot electrons in a thin layer of SiO2 on Si

R. Poirier and J. Olivier

Appl. Phys. Lett. 21, 334 (1972); http://dx.doi.org/10.1063/1.1654401 (2 pages) | Cited 11 times

Online Publication Date: 16 October 2003

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In vacuo photoemission from SiO2‐covered Si shows that the quantum yield and the energy threshold depend on the SiO2 layer in the 10‐ to 120‐Å thickness range. These effects have been explained by electron‐optical phonon scattering in the thin SiO2 layer before one Si‐emitted electron escapes into the vacuum. An approximate value of the phonon energy at the center of the Brillouin zone (ΔE = 83 meV) and a mean free path for phonon scattering (l = 35 Å) are given.
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