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15 Oct 1972

Volume 21, Issue 8, pp. 339-402

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Simultaneous two‐wavelength selection in the N2 laser‐pumped dye laser

Herschel S. Pilloff

Appl. Phys. Lett. 21, 339 (1972); http://dx.doi.org/10.1063/1.1654402 (2 pages) | Cited 24 times

Online Publication Date: 16 October 2003

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A technique is reported which allows simultaneous two‐wavelength selection in the N2 laser‐pumped dye laser. The two wavelengths are continuously tunable anywhere within the optical gain region of the particular dye solution used, and the two output beams are collinear and collimated, have mutually orthogonal polarizations, and in general can be temporally synchronized. Following the description of this device, the extension of this technique to other lasers and a few potential applications will be briefly discussed.

High‐repetition‐rate optical pulse generator using a Fabry‐Perot electro‐optic modulator

T. Kobayashi, T. Sueta, Y. Cho, and Y. Matsuo

Appl. Phys. Lett. 21, 341 (1972); http://dx.doi.org/10.1063/1.1654403 (3 pages) | Cited 33 times

Online Publication Date: 16 October 2003

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A high‐repetition‐rate optical pulse generator which employs a Fabry‐Perot electro‐optic modulator as the output coupler of a laser resonator was constructed. Using this generator with a He☒Ne 6328‐Å laser tube, 21‐psec optical pulses at a repetition rate of 2.7 × 109 pps were experimentally obtained with an average power level of 0.5 mW. In addition, it is demonstrated that the width of the pulses obtained from this generator can be narrowed without regard to the gain‐linewidth limitation. This kind of pulse generator may be particularly useful for obtaining short optical pulses from low‐gain gas lasers, and it is possible to obtain 1010‐pps picosecond pulses from a He☒Ne 6328‐Å laser.

CO TEA laser at 77°K

D.B. Cohn

Appl. Phys. Lett. 21, 343 (1972); http://dx.doi.org/10.1063/1.1654404 (3 pages) | Cited 4 times

Online Publication Date: 16 October 2003

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A CO TEA laser, cooled to 77°K by a surrounding liquid‐nitrogen bath, is found to exhibit laser action on approximately 60 transitions over the spectral range 4.960–5.610 μm. Following a single 0.5‐μsec excitation pulse, lasing action is observed to continue up to 2 msec with 15 Torr of CO and up to 4 msec with a 14‐Torr CO☒N2 mixture.

Rotational relaxation and triplet‐state effects in the cw dye laser

A.E. Siegman, D.W. Phillion, and D.J. Kuizenga

Appl. Phys. Lett. 21, 345 (1972); http://dx.doi.org/10.1063/1.1654405 (4 pages) | Cited 11 times

Online Publication Date: 16 October 2003

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In a cw dye laser apparatus we measure first the fluorescence depolarization in the usual manner, and then the ratio of laser threshold pump powers for the laser polarization parallel and perpendicular to the linearly polarized pump source. From these two measurements we can obtain the important triplet‐state parameter KT ≡ kSTτTσT∕ σe, as well as the rotational relaxation time for the dye. For Rhodamine 6G in water with Triton X‐100, we find KT=0.35 ± 0.02, while with Ammonyx‐LO KT=0.25 ± 0.02. These additives also slow down the rotational relaxation of the dye molecule by more than an order of magnitude compared to common organic solvents.

Passive mode locking of the cw dye laser

E.P. Ippen, C.V. Shank, and A. Dienes

Appl. Phys. Lett. 21, 348 (1972); http://dx.doi.org/10.1063/1.1654406 (3 pages) | Cited 67 times

Online Publication Date: 16 October 2003

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Passive mode locking of a cw Rhodamine 6G laser is reported. A stable continuous output of picosecond pulses has been achieved. Correlation measurements using second‐harmonic generation (SHG) have determined the pulses to be as short as 1.5 psec. The pulses are transform limited and are wavelength tunable over the range 5900–6100 Å.

Background energy level spectroscopy in GaP using thermal release of trapped space charge in Schottky barriers

B.L. Smith

Appl. Phys. Lett. 21, 350 (1972); http://dx.doi.org/10.1063/1.1654407 (3 pages) | Cited 27 times

Online Publication Date: 16 October 2003

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The energy distribution and concentration of electrically active background impurities in GaP have been investigated by observing the current when space charge trapped at these impurities is thermally released within the depletion region of a Schottky barrier formed on the semiconductor. Large‐area Schottky barriers are used for these measurements in order that small concentrations of impurities may be detected. The measurements have been carried out for both liquid‐encapsulated‐Czochralski (LEC)‐ and liquid‐phase‐epitaxial (LPE)‐grown material using n‐type wafers. In LEC GaP, at least seven electrically active background levels are detectable and these exist at concentrations between 1 × 1015−3 × 1016 cm−3, while in LPE GaP only three or four are detectable and these exist in much smaller concentrations of about 1014 cm−3.

Computed secondary‐electron and electric field distributions in an electron‐beam‐controlled gas‐discharge laser

R.C. Smith

Appl. Phys. Lett. 21, 352 (1972); http://dx.doi.org/10.1063/1.1654408 (4 pages) | Cited 8 times

Online Publication Date: 16 October 2003

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A Monte Carlo calculation indicates, to first order, the effect of a 4‐kV∕cm atm sustainer field on the primary‐electron dose distribution and the secondary‐electron density distribution in an electron‐beam‐controlled gas‐discharge laser. For the 100‐keV incident electrons considered, the electron range is, at most, doubled by the field and the maximum lateral displacement increases by 50%. For electrodes separated by 1.1 times the no‐field electron range, the secondary electron density has a spatial variation to first order of ± 20%.

Growth of three‐dimensional dielectric waveguides for integrated optics by molecular‐beam‐epitaxy method

A.Y. Cho and F.K. Reinhart

Appl. Phys. Lett. 21, 355 (1972); http://dx.doi.org/10.1063/1.1654409 (2 pages) | Cited 21 times

Online Publication Date: 16 October 2003

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Experimental work was carried out to fabricate three‐dimensional waveguides for integrated optics by masking molecular beams during epitaxy of GaAs and AlxGa1−xAs. We report here some preliminary results of this new technique for fabricating dielectric waveguides.

Absorption saturation in germanium, silicon, and gallium arsenide at 10.6 μm

A.F. Gibson, C.A. Rosito, C.A. Raffo, and M.F. Kimmitt

Appl. Phys. Lett. 21, 356 (1972); http://dx.doi.org/10.1063/1.1654410 (2 pages) | Cited 45 times

Online Publication Date: 16 October 2003

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The absorption of p‐type Ge, Si, and GaAs at 10.6 μm decreases at high intensities. The saturation intensity of Ge, 10 MW cm−2, is sufficiently low for it to be used for passive mode locking of a TEA laser.

Low‐loss epitaxial ZnO optical waveguides

J.M. Hammer, D.J. Channin, M.T. Duffy, and J.P Wittke

Appl. Phys. Lett. 21, 358 (1972); http://dx.doi.org/10.1063/1.1654411 (3 pages) | Cited 21 times

Online Publication Date: 16 October 2003

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Optical waveguide losses below 5 dB∕cm have been measured on single‐crystal epitaxial ZnO films grown on Al2O3. These films promise to be useful in a variety of active integrated optic applications. Comparison of the details of loss measurements with carrier density and mobility measurements gives information on possible loss mechanisms.

Melting of solids with a linear Us−up relationship

David J. O'Keeffe

Appl. Phys. Lett. 21, 360 (1972); http://dx.doi.org/10.1063/1.1654412 (2 pages) | Cited 2 times

Online Publication Date: 16 October 2003

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A theoretical technique is described for determining the melting line for solids with a linear Us−up (i.e., shock velocity‐particle velocity) relationship, utilizing the Lindeman law and an accurate Grüneisen equation of state. A theoretical melting curve for copper is presented, and its good agreement with static high‐pressure measurements is noteworthy in view of recent criticism of the Lindemann law.

Quantitative aspects of a soft x‐ray laser

Benjamin Lax and Arthur H. Guenther

Appl. Phys. Lett. 21, 361 (1972); http://dx.doi.org/10.1063/1.1654413 (3 pages) | Cited 21 times

Online Publication Date: 16 October 2003

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Calculations show that a soft x‐ray laser is feasible when a solid target of low atomic number is excited with a focused mode‐locked Nd: glass laser of power level ≳1012 W. Quantitative evaluation of the physical processes involved, such as ionization, inversion, stimulated emission, and Auger effect, is presented.

Importance of Fresnel reflections in laser surface damage of transparent dielectrics

M.D. Crisp, N.L. Boling, and G. Dubé

Appl. Phys. Lett. 21, 364 (1972); http://dx.doi.org/10.1063/1.1654414 (3 pages) | Cited 32 times

Online Publication Date: 16 October 2003

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It is shown that interference between incident and reflected light waves at the surfaces of a transparent dielectric material significantly influences surface damage thresholds. For normal incidence the light that is reflected at the entrance face of a surface is 180° out of phase with the incident light, and the resulting interference causes a sizable reduction in the electric field at the entrance face. The light reflected at the exit face suffers no phase shift, and as a result its interference with the incident light slightly increases the electric fields experienced at the exit surface. The analysis predicts a definite ratio for the damage threshold of the entrance and exit surfaces. This and one other prediction are experimentally investigated for Owens‐Illinois ED‐2 laser glass.

Wall mobility and velocity saturation in bubble‐domain materials

H. Callen, R.M. Josephs, J.A. Seitchik, and B.F. Stein

Appl. Phys. Lett. 21, 366 (1972); http://dx.doi.org/10.1063/1.1654415 (4 pages) | Cited 10 times

Online Publication Date: 16 October 2003

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The conventional dynamical equations of wall motion are modified by a phenomenological nonlinear damping factor to describe the nonlinearity and velocity saturation observed in some bubble materials. We show that under certain restrictive but common conditions the solution of the resultant nonlinear differential equation can be obtained from the conventional linear solution by the simple transformation t → t ± x∕v, where v is the saturation velocity. The conditions for this solution are (a) that the inertial terms are negligible and (b) that the motion is such that the velocity does not change sign. Solutions of the modified dynamical equation are compared with measurements of step‐function wall response and of bubble collapse in Y2.4Eu0.6Fe3.8Ga1.2O12, and it is shown that the measurements are consistently and adequately described by the nonlinear dynamical equation. The nonlinear damping also modifies the equation describing bubble velocity in gradient fields, and it is shown that the modified equation is consistent with propagation data.

Underwater optical holographic interferometry

C.D. Johnson and G.M. Mayer

Appl. Phys. Lett. 21, 369 (1972); http://dx.doi.org/10.1063/1.1654416 (2 pages) | Cited 1 time

Online Publication Date: 16 October 2003

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Time‐average optical holographic interferometry techniques have been used to obtain measurements of an array of sonar transducer elements operating underwater in a 15‐m‐diam 30‐m‐deep tank. Holograms were made from outside the tank through a pair of portholes using an argon‐ion laser. Measurements were made to provide experimental verification of predicted acoustically induced mutual coupling effects. The quality of the hologram reconstructions was sufficient to resolve fringes spaced 1 mm apart from a viewing distance of 7.5 m.

Internal photoemission in sapphire substrates

C.R. Viswanathan and R.Y. Loo

Appl. Phys. Lett. 21, 370 (1972); http://dx.doi.org/10.1063/1.1654417 (3 pages) | Cited 8 times

Online Publication Date: 16 October 2003

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Electron injection has been accomplished in a thick (10–20 mil) ordered insulator (single‐crystal sapphire), using an internal photoemission technique. It is shown that transport properties of electrons in ordered insulators can be easily measured using this technique.

Surface‐wave convolution using a CdS‐fluid‐LiNbO3 structure

P. Das and M.N. Araghi

Appl. Phys. Lett. 21, 373 (1972); http://dx.doi.org/10.1063/1.1654418 (2 pages) | Cited 3 times

Online Publication Date: 16 October 2003

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Experimental results on the convolution of surface waves in a structure of CdS‐water‐LiNbO3 are reported. The convolved output has been enhanced by applying a dc electric field across CdS having the proper conductivity. The enhancement is large enough to offset the losses involved producing a net electronic gain for the convolution process.

Measurement of the pyroelectric coefficient and permittivity from the pyroelectric response to step radiation signals in ferroelectrics

M. Simhony and A. Shaulov

Appl. Phys. Lett. 21, 375 (1972); http://dx.doi.org/10.1063/1.1654419 (3 pages) | Cited 14 times

Online Publication Date: 16 October 2003

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A method is presented of measuring the pyroelectric coefficient λ and permittivity ϵ from the initial slope, rise time, and peak value of the pyroelectric response to step radiation signals, valid for temperatures up to the Curie point. An experiment carried out on single‐crystalline triglycine sulphate has yielded the temperature dependence of λ and ϵ with reasonable accuracy and in good agreement with other methods.

Ageing of the residual surface resistance of superconducting lead cavities

M. Danielsen

Appl. Phys. Lett. 21, 377 (1972); http://dx.doi.org/10.1063/1.1654420 (3 pages) | Cited 1 time

Online Publication Date: 16 October 2003

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Measurements of the residual surface resistance of superconducting lead cavities as a function of time during a period of a month showed an oscillating variation. An explanation of the ageing curves is proposed.

High‐efficiency Ga1−xAlxAs☒GaAs solar cells

J.M. Woodall and H.J. Hovel

Appl. Phys. Lett. 21, 379 (1972); http://dx.doi.org/10.1063/1.1654421 (3 pages) | Cited 40 times

Online Publication Date: 16 October 2003

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Heterojunction solar cells consisting of pGa1−xAlxAs☒pGaAs☒n GaAs are grown by liquid‐phase epitaxy and exhibit power conversion efficiencies of over 16% (corrected for contact area) measured in sunlight for air mass 1 at sea level, while efficiencies of 19–20% are obtained for an air mass value of 2 or more. The improved efficiencies compared to conventional homojunction (Si and GaAs) cells are attributed to the reduction of series resistance and the reduction of surface recombination losses resulting from the presence of the heavily doped Ga1−xAlxAs layer. Open‐circuit voltages of 0.98–1.0 V and short‐circuit currents of 18–21 mA∕cm2 (corrected for contact area) are observed for a solar input intensity of 98.3 mW∕cm2.

Synchronously pulsed ir up‐conversion

David Y. Tseng

Appl. Phys. Lett. 21, 382 (1972); http://dx.doi.org/10.1063/1.1654422 (3 pages) | Cited 6 times

Online Publication Date: 16 October 2003

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The successful operation of a synchronously pulsed high‐repetition‐rate ir up‐converter is reported. Using a 1.06‐μm Nd:YAG pump laser and a proustite (Ag3AsS3) nonlinear crystal, 10.6‐μm pulsed output from a CO2 laser has been up‐converted to 0.964 μm with good conversion efficiency and high peak power obtained. Up‐conversion efficiency of 0.84% has been achieved, which generated peak power outputs of 8.4 W at 0.964 μm. This was accomplished at a repetition rate of 133 pps. Under these conditions, the beam of the up‐converted signal was easily imaged and clearly visible on an ordinary S‐1 surface‐image intensifier tube. Thus, real time imaging or electronic image processing of ir‐illuminated scenery should be possible using this mode of operation.

Photosensitive field emission from silicon point arrays

R.N. Thomas and H.C. Nathanson

Appl. Phys. Lett. 21, 384 (1972); http://dx.doi.org/10.1063/1.1654423 (3 pages) | Cited 15 times

Online Publication Date: 16 October 2003

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Efficient photoemission has been demonstrated from uniform large‐area arrays of field emitters, fabricated at densities of 106 in.−2 by microetching techniques in p‐type silicon. Such arrays were shown to emit electrons into vacuum when biased by a closely spaced plane anode (125‐ to 500‐μm spacing) at a few kilovolts. No high‐vacuum cesiation or high‐temperature cleaning is required to observe this emission. Stable reflective photosensitivities exceeding 1500 μA∕lm and quantum efficiencies of 2% at 1.06 μm and 28% at 0.90 μm have been demonstrated in thick p‐type silicon arrays.

Transmissive‐mode silicon field emission array photoemitter

R.N. Thomas and H.C. Nathanson

Appl. Phys. Lett. 21, 387 (1972); http://dx.doi.org/10.1063/1.1654424 (3 pages) | Cited 6 times

Online Publication Date: 16 October 2003

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The photosensitivity of thin silicon field‐emitter array structures has been investigated in transmission over the 0.4‐ to 1.1‐μm spectral region. Quantum yields of 45% at 0.90 μm and 0.5% at 1.06 μm have been measured at 90 °K. Image formation at wavelengths longer than 0.85 μm with a resolution approaching 10 line pairs∕mm has been demonstrated with prototype 30‐mm‐diam target structures. It is also shown that large‐area avalanche multiplication of carriers may be used without significant image degradation.

Surface‐elastic‐wave properties of dc‐triode‐sputtered zinc oxide films

F.S. Hickernell and J.W. Brewer

Appl. Phys. Lett. 21, 389 (1972); http://dx.doi.org/10.1063/1.1654425 (3 pages) | Cited 9 times

Online Publication Date: 16 October 2003

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Measurements at frequencies above 200 MHz have been made of the coupling factor, phase velocity, and propagation loss of dc‐triode‐sputtered zinc oxide film layers on oxidized silicon and fused quartz. Values of 2.2% have been obtained for k2. Propagation losses of 8.0 dB∕μsec were observed at 630 MHz. The measurements strongly suggest that sputtered zinc oxide films can be obtained whose quality approaches very closely that of single‐crystal zinc oxide.

Thermally addressed electrically erased high‐resolution liquid‐crystal light valves

H. Melchior, Frederic J. Kahn, D. Maydan, and D.B. Fraser

Appl. Phys. Lett. 21, 392 (1972); http://dx.doi.org/10.1063/1.1654426 (3 pages) | Cited 28 times

Online Publication Date: 16 October 2003

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New highly transparent liquid‐crystal light valves for the recording, storage, and display of high‐resolution graphic images in projection displays are described. Information is recorded in these light valves by an x‐y deflected intensity‐modulated ir laser beam which locally heats visually transparent infrared absorbing electrodes. The resulting temporary heating of the cholesteric liquid crystal creates light‐scattering centers that remain stored until erased electrically. Resolution is 50 lines∕mm over a 4×4‐cm area. Contrast is better than 10:1. Addressing speed is higher than 104 picture elements∕sec for a few mW of 1.06‐μm YAlG laser power.
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