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1 Nov 1972

Volume 21, Issue 9, pp. 405-451


Schottky barrier height dependence on Si crystal orientation

P. Gutknecht and M.J.O. Strutt

Appl. Phys. Lett. 21, 405 (1972); http://dx.doi.org/10.1063/1.1654431 (3 pages) | Cited 4 times

Online Publication Date: 16 October 2003

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Planar Al☒nSi and PtSi☒nSi Schottky barriers with diffused p‐type guard rings have been fabricated on (111) and (100) silicon surfaces. The barriers have been produced by sputtering the metals on sputter‐etched silicon surfaces. For Al☒nSi barriers the barrier height is 0.72 eV on (111) surfaces and 0.81 eV on (100) surfaces, as determined from the forward I‐V characteristic. This difference in barrier potential has been confirmed by C‐V measurements. No difference in barrier height is found for PtSi☒nSi barriers made on (111) and (100) surfaces. A qualitative explanation is given for the experimental results in terms of strong or weak coupling of surface states to the metal.

Amplification at 1.06 μm using a Nd : glass thin‐film waveguide

Hiroyoshi Yajima, Shigeki Kawase, and Yasuo Sekimoto

Appl. Phys. Lett. 21, 407 (1972); http://dx.doi.org/10.1063/1.1654432 (3 pages) | Cited 7 times

Online Publication Date: 16 October 2003

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Nd‐doped glass (3.5 wt% Nd2O3) is sputtered on Corning No. 7059 glass to make an active thin‐film waveguide. The thin film is pumped with a Xe flash tube, and the amplification of 1.06‐μm laser light that propagates in the thin film is observed.

Electron energy relaxation times in GaAs and InP

G.H. Glover

Appl. Phys. Lett. 21, 409 (1972); http://dx.doi.org/10.1063/1.1654433 (3 pages) | Cited 11 times

Online Publication Date: 16 October 2003

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The field‐dependent energy relaxation times of electrons in GaAs and InP have been determined from the 34‐GHz complex conductivity measured in the presence of a dc heating field. The values for GaAs and InP are 2.5 and 1.7 psec, respectively, at low fields, but increase rapidly near the bulk‐effect threshold field values. Moreover, the relaxation time for InP is found to be less than that for GaAs at all fields. These results are in qualitative accord with predictions based on velocity‐field measurements.

n‐p junction ir detectors made by proton bombardment of epitaxial PbTe

E.M. Logothetis, H. Holloway, A.J. Varga, and W.J. Johnson

Appl. Phys. Lett. 21, 411 (1972); http://dx.doi.org/10.1063/1.1654434 (3 pages) | Cited 8 times

Online Publication Date: 16 October 2003

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Proton bombardment has been used to make n‐p junction ir detectors from epitaxial PbTe films on BaF2 substrates. When cooled at 77°K, these detectors are background limited at f∕0.8; further reduction of the field of view gives Johnson‐noise‐limited peak detectivities of 6×1011 cm Hz1∕2W−1 at f∕20. The peak quantum efficiencies are 0.40–0.47.

Photoinitiated and photosustained laser

H. Seguin and J. Tulip

Appl. Phys. Lett. 21, 414 (1972); http://dx.doi.org/10.1063/1.1654435 (2 pages) | Cited 41 times

Online Publication Date: 16 October 2003

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The gases and cathode of a TEA CO2 laser are irradiated with uv radiation. The resulting photoionization and photoemission initiate and assist in sustaining a high‐energy low‐field‐strength discharge. Output energy of 50 J∕liter at an efficiency of 15% has been obtained in an initial demonstration.

Penetration of a magnetic constriction by intense relativistic electron beams

James Benford and Bruce Ecker

Appl. Phys. Lett. 21, 415 (1972); http://dx.doi.org/10.1063/1.1654436 (3 pages) | Cited 1 time

Online Publication Date: 16 October 2003

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An experiment to observe propagation and compression of an intense relativistic electron beam in a tapered linear pinch resulted in beam penetration of the magnetic field constriction at the discharge's narrow end, contradicting the single‐particle model verified in earlier experiments using axially uniform pinches. Transverse beam pressure overcame the net pinch pressure, expanding the magnetic constriction and allowing beam passage.

Avalanche‐injected hole current in SiO2

J.F. Verwey

Appl. Phys. Lett. 21, 417 (1972); http://dx.doi.org/10.1063/1.1654437 (3 pages) | Cited 6 times

Online Publication Date: 16 October 2003

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Results are given on the current of holes through an insulating double layer of SiO2 and Si3N4 on silicon. The holes originated from an avalanching p‐n junction in the silicon and were injected into the SiO2. The results can be explained by assuming a space‐charge‐limited hole current in the SiO2 in the presence of traps exponentially distributed in energy. A value of about 10−3 cm2V−1 sec−1 was found for μ, the hole mobility in the SiO2.

Coincidence of Er : YAG laser emission with methane absorption at 1645.1 nm

Kenneth O. White and Stuart A. Schleusener

Appl. Phys. Lett. 21, 419 (1972); http://dx.doi.org/10.1063/1.1654438 (2 pages) | Cited 19 times

Online Publication Date: 16 October 2003

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A recently developed solid‐state‐laser‐simulated tuning technique has been used to investigate the coincidence of Er : YAG laser emission with methane (CH4) gas absorption in the 1.6‐μm region. When the laser is operated under maximum‐bandwidth conditions, full coincidence is obtained, thus enabling possible remote sensing of CH4 in the eye‐safe region. Unresolved fine structure of the CH4 absorption line was indicated.

Flux reversal in single‐crystal MnBi platelets by vacuum deposition

Shigeo Honda, Susumu Konishi, and Tetsuzo Kusuda

Appl. Phys. Lett. 21, 421 (1972); http://dx.doi.org/10.1063/1.1654439 (3 pages) | Cited 6 times

Online Publication Date: 16 October 2003

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The magnetic properties of single‐crystalline platelets of MnBi were studied with the aid of the Kerr effect, and some physical properties were analyzed by using an x‐ray microanalyzer. The hysteresis loop has reentrant characteristics, and the coercive force is very small. A domain spot nucleated by thermal writing continues to expand by wall motion, and finally the platelet is almost demagnetized.

Lateral photovoltaic effect in nitrogen‐implanted p‐type silicon

Hirohiku Niu, Tetsuro Matsuda, Kenji Yamauchi, and Munezo Takai

Appl. Phys. Lett. 21, 423 (1972); http://dx.doi.org/10.1063/1.1654440 (2 pages) | Cited 6 times

Online Publication Date: 16 October 2003

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Nitrogen ions (N2+) are implanted into p‐type Si samples to a dose of 6×1014 cm−2 at 10 keV. When the samples, annealed at temperatures higher than 535°C, are irradiated nonuniformly, photovoltages are observed parallel to the implanted surface. This lateral photovoltaic effect has confirmed that an n‐type layer is formed by nitrogen implantation. The lateral photovoltage is a linear function of the irradiation position. The dependence of the photovoltage on irradiation wavelength (0.70–1.40 μ) and on anneal temperature (up to 850°C) has also been investigated.

Beam‐induced lattice disorder in channeling experiments on Si and Ge

S.U. Campisano, G. Foti, F. Grasso, and E. Rimini

Appl. Phys. Lett. 21, 425 (1972); http://dx.doi.org/10.1063/1.1654441 (3 pages) | Cited 4 times

Online Publication Date: 16 October 2003

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The disorder produced by 0.3‐MeV D+ random bombardment in Si and Ge crystal targets has been investigated with 1.5‐MeV D+ channeling measurements. An increase of about 30–50% in the 〈111〉‐ and 〈110〉‐aligned yields of Ge samples has been found after a bombardment with a dose of 200–300 μC∕cm2. No significant increase was observed in bombarded Si samples. Detailed angular scans suggest a ``spread‐out'' distribution of defects imbedded in the lattice structure.

Nonlinear loss in Nd‐doped laser glass

A. Penzkofer and W. Kaiser

Appl. Phys. Lett. 21, 427 (1972); http://dx.doi.org/10.1063/1.1654442 (4 pages) | Cited 11 times

Online Publication Date: 16 October 2003

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The amplifier gain and the energy transmission in Nd‐glass were investigated as functions of light intensity using single picosecond pulses. The observed reductions of gain and transmission are well accounted for by a two‐photon absorption process in the Nd3+ system. There is good agreement between the measured and calculated two‐photon absorption cross section of σ′ = (1.3 ± 0.3) × 10−32 cm4∕W. The two‐photon absorption limits the obtainable output intensity in a Nd‐glass amplifier and reduces the self‐focusing action in the material.

Instantaneous velocity correlations from a single dopplermeter

Ferren MacIntyre

Appl. Phys. Lett. 21, 430 (1972); http://dx.doi.org/10.1063/1.1654443 (3 pages)

Online Publication Date: 16 October 2003

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A new method for measuring velocities and velocity structure functions of turbulence with a single dopplermeter (laser Doppler‐shift velocimeter) is analyzed by optical mixing theory. The zero‐mean‐velocity signal is mixed electronically with a local oscillator before FM demodulation to recover the instantaneous velocity.

Electrical CO‐mixing gas‐dynamic laser

H. Brunet and M. Mabru

Appl. Phys. Lett. 21, 432 (1972); http://dx.doi.org/10.1063/1.1654444 (2 pages) | Cited 6 times

Online Publication Date: 16 October 2003

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An electric‐discharge CO‐mixing laser is described in which N2 is vibrationally excited in an electrical discharge and then mixed with cold CO in a supersonic expansion providing a population inversion between CO vibrational bands. Continuous output is achieved from an optical cavity established transverse to the flow. Maximum laser power obtained to date is 45 W, corresponding to an efficiency of 4% and a volumetric power density of 6 W∕cm3.

Identification of donor species in high‐purity GaAs using optically pumped submillimeter lasers

H.R. Fetterman, J. Waldman, C.M. Wolfe, G.E. Stillman, and C.D. Parker

Appl. Phys. Lett. 21, 434 (1972); http://dx.doi.org/10.1063/1.1654445 (3 pages) | Cited 15 times

Online Publication Date: 16 October 2003

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An optically pumped NH3 laser has been used in conjunction with careful doping experiments in high‐purity GaAs to determine the ionization energy of isolated tin donors. The energy obtained is 5.820 meV, which corresponds to a central‐cell correction of 0.081 meV. This technique for impurity analysis is estimated to be sensitive to donor concentrations of less than 1011 cm−3.

Mass motion as observed by light‐beating spectroscopy

N. Ben‐Yosef, S. Zweigenbaum, and A. Weitz

Appl. Phys. Lett. 21, 436 (1972); http://dx.doi.org/10.1063/1.1654446 (2 pages) | Cited 2 times

Online Publication Date: 16 October 2003

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In the power spectra of the scattered light from silver chloride colloidal particles in water, a Lorentzian shifted from zero frequency has been observed in addition to the zero‐centered one. The shifted peak is attributed to the mass motion due to liquid flow resulting from the heating of the illuminated part by the laser beam.

Isotope‐shift Zeeman effect for trace‐element detection: an application of atomic physics to environmental problems

Tetsuo Hadeishi

Appl. Phys. Lett. 21, 438 (1972); http://dx.doi.org/10.1063/1.1654447 (3 pages) | Cited 27 times

Online Publication Date: 16 October 2003

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Bitter's magnetic scanning method was applied to the detection of trace amounts of mercury, using the Zeeman effect of an isotope‐shifted 198Hg line. This new technique for trace‐element detection makes it possible to detect Hg in the ppb (part‐per‐billion) range directly from a host material in a few seconds.

Surface charge effects on the resistivity and Hall coefficient of thin silicon‐on‐sapphire films

W.E. Ham

Appl. Phys. Lett. 21, 440 (1972); http://dx.doi.org/10.1063/1.1654448 (4 pages) | Cited 9 times

Online Publication Date: 16 October 2003

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Surface depletion due to surface charges was observed on thin films of silicon on sapphire spinel. A gated metal‐oxide‐semiconductor (MOS) Hall bar structure with a deposited silicon dioxide dielectric was used to determine the true average properties of the films. It is shown that these charges can cause very serious errors in the interpretation of resistivity, Hall coefficient, and mobility data. A decreasing mobility into the films is directly observed.

Effect of channeling and irradiation temperature on the morphology of blisters in niobium

M. Kaminsky and S.K. Das

Appl. Phys. Lett. 21, 443 (1972); http://dx.doi.org/10.1063/1.1654449 (3 pages) | Cited 19 times

Online Publication Date: 16 October 2003

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The morphology of blisters formed in monocrystalline and polycrystalline niobium samples under 0.5‐MeV 4He‐ion impact at 900°C has been studied. For the irradiated monocrystalline samples, the results reveal that the shape and size of the observed blisters are highly dependent on channeling conditions.

High magnetic coercivity of neodymium‐ and didymium‐cobalt alloys sintered with Pr and Sm additives

J.B.Y. Tsui, K.J. Strnat, and J. Schweizer

Appl. Phys. Lett. 21, 446 (1972); http://dx.doi.org/10.1063/1.1654450 (3 pages) | Cited 3 times

Online Publication Date: 16 October 2003

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The coercive forces of micron‐sized NdCo5 and DiCo5 are less than 200 Oe. When these compounds were sintered with Pr☒Co and Sm☒Co as sintering aids, relatively high coercivities could be obtained. The highest coercivities of sintered NdCo5 and DiCo5 are 4000 and 10 280 Oe, respectively.

The effect of inhomogeneities in acoustic‐surface‐wave amplification

B.E. Burke and Abraham Bers

Appl. Phys. Lett. 21, 449 (1972); http://dx.doi.org/10.1063/1.1654451 (3 pages) | Cited 1 time

Online Publication Date: 16 October 2003

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We present the results of a theoretical analysis of acoustic‐surface‐wave amplification by a sheet of electrons whose density and drift velocity vary along the common direction of acoustic wave propagation and electron drift. Such inhomogeneities not only may result from doping variations but are inherent for drifting electrons at the surface of a semiconductor because of fringing electric fields due to the applied dc potential. We propose the results as a possible explanation of the observed inability of such amplifiers to reach the maximum gain predicted by the homogeneous amplifier theory.
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