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15 Jun 1973

Volume 22, Issue 12, pp. 617-688

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Effect of 80‐keV Ne+ ion implantation on acoustic surface wave attenuation in LiNbO3

T.R. Larson, W.H. Weisenberger, and W.H. Lucke

Appl. Phys. Lett. 22, 617 (1973); http://dx.doi.org/10.1063/1.1654529 (2 pages) | Cited 5 times

Online Publication Date: 16 October 2003

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Acoustic surface wave attenuation in LiNbO3 caused by ion implantation was studied as a function of fluence and surface wave frequency. 80‐keV Ne+ ions were implanted at five fluences covering the range 1014–1016 ions∕cm2. The yz Rayleigh surface waves were generated spanning the interval 100–1000 MHz by interdigital transducers operating at odd harmonics. Attenuation was measured directly by a standard laser probe using reflected light. At low acoustic power densities, the data can be fit by P(z)∕P0=10−Af2z, where P is acoustic power, f is the surface wave frequency, and A is a constant for each fluence used. The values of A show a definite peak with fluence at around 1015 ions∕cm2, where A=9 × 10−5 dB cm−1 MHz−2±10%. This is about twenty times the value of A for an unimplanted surface.

Scattering of sound by sound in solids

J.M. Rouvaen, E. Bridoux, and R. Torguet

Appl. Phys. Lett. 22, 619 (1973); http://dx.doi.org/10.1063/1.1654530 (4 pages) | Cited 5 times

Online Publication Date: 16 October 2003

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See Also: Erratum

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We show in this letter that nonlinear interactions between noncollinear elastic waves can be analyzed by using the well‐known mathematical formalism of wave propagation in periodic media, which leads to a set of coupled amplitude equations much like those found in the optoacoustic interaction case. The behavior predicted from these equations for isotropic media is well consistent with results known for Bragg diffraction in anisotropic media. The conditions for an experiment using a lead molybdate crystal are derived. By using the optoacoustic analogy, some device applications may be thought of and the scope of the present work may be extended to cover interactions involving elastic surface waves.

Direct observation of Dauphiné twins in quartz with second‐harmonic light

G. Dolino, J.P. Bachheimer, and M. Vallade

Appl. Phys. Lett. 22, 623 (1973); http://dx.doi.org/10.1063/1.1654531 (3 pages) | Cited 8 times

Online Publication Date: 16 October 2003

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Dauphiné twins in quartz have been directly observed and photographed by using second‐harmonic light. A theoretical analysis shows that a plane twin boundary in a plane parallel slab of quartz produces a system of interference fringes at the crystal output surface, corresponding to the existence of two second‐harmonic beams with different directions. This was experimentally verified, and thus a topography of the twins has been obtained. Furthermore, the orientation of the twins relative to a twinless quartz crystal has been determined.

Study of the wavelength dependence of optically induced birefringence change in undoped LiNbO3

H.B. Serreze and R. B. Goldner

Appl. Phys. Lett. 22, 626 (1973); http://dx.doi.org/10.1063/1.1654532 (2 pages) | Cited 14 times

Online Publication Date: 16 October 2003

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Optically induced birefringence change (``optical damage'') has been studied in undoped LiNbO3 from 400 to 800 nm by using an incoherent light source. Optical damage was observed over the entire wavelength range, with damage peaking near 415 nm. Structure, which could not be observed by normal optical absorption measurements, was seen in at least three regions of the damage‐wavelength curve.

Photovoltaic effect in amorphous‐silicon‐electrolyte interface

Y.K. Chan and T.S. Jayadevaiah

Appl. Phys. Lett. 22, 628 (1973); http://dx.doi.org/10.1063/1.1654533 (2 pages) | Cited 4 times

Online Publication Date: 16 October 2003

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By studying the photovoltage developed across the amorphous silicon‐electrolyte interface on illumination with monochromatic light, the mobility gap in amorphous silicon is found to be about 1.7 eV. The effect of preparation conditions is very significant, with unannealed films deposited by electron beam evaporation showing considerable structure in the spectral response. After low‐temperature annealing, typically at 120°C for 20 h, the spectral response shows a sharp edge and is similar to that of single‐crystal silicon but is displaced to higher energies by about 0.6 eV. Sputtered films, even when unannealed, show almost identical spectral response as fully annealed films, which is attributed to the process of film growth in the sputtering process.

Lowering of breakdown voltage of semiconductor silicon due to the precipitation of impurity carbon

N. Akiyama, Y. Yatsurugi, Y. Endo, Z. Imayoshi, and T. Nozaki

Appl. Phys. Lett. 22, 630 (1973); http://dx.doi.org/10.1063/1.1654534 (2 pages) | Cited 6 times

Online Publication Date: 16 October 2003

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The lowering of breakdown voltage and the softening of V‐I curves of silicon diodes, caused by the precipitation of impurity carbon, have been observed.

Formation mechanisms in an excited‐state‐reaction dye laser

A. Dienes, R.K. Jain, and C. Lin

Appl. Phys. Lett. 22, 632 (1973); http://dx.doi.org/10.1063/1.1654535 (3 pages) | Cited 3 times

Online Publication Date: 16 October 2003

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The formation mechanisms in an excited‐state‐reaction coumarin laser dye are investigated by measurements of the saturation characteristics of the laser. By recording the influence of intense cavity oscillation on the single‐ and double‐pass amplified spontaneous emissions of the two different ``exciplex'' species, it is found that a ``serial'' model applies, the green‐emitting species being formed from the blue‐emitting one.

Dependence of laser‐induced breakdown field strength on pulse duration

D.W. Fradin, N. Bloembergen, and J.P. Letellier

Appl. Phys. Lett. 22, 635 (1973); http://dx.doi.org/10.1063/1.1654536 (3 pages) | Cited 35 times

Online Publication Date: 16 October 2003

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Field strengths at which optical damage is initiated in NaCl have been measured with a mode‐locked Nd: YAG laser with pulse durations of 15 and 300 psec. Comparison with previously reported data with a Q‐switched laser shows that the field strength required for intrinsic optical damage increases by almost one order of magnitude from 106 V∕cm at 10−8 sec to over 107 V∕cm at 1.5 × 10−11 sec. This is in qualitative agreement with published estimates based on the electron avalanche breakdown mechanism.

High peak power from (GaAl)As☒GaAs double‐heterostructure injection lasers

P.A. Kirkby and G.H.B. Thompson

Appl. Phys. Lett. 22, 638 (1973); http://dx.doi.org/10.1063/1.1654537 (3 pages) | Cited 10 times

Online Publication Date: 16 October 2003

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Double‐heterostructure (GaAl)As☒GaAs injection lasers have been made with very narrow active regions in the range 0.11–0.14 μm. In addition to giving narrow angular beam widths down to 16°, they show high peak power handling capacity up to 40‐W∕mm junction width at threshold current densities of less than 1500 A∕cm2. The results are consistent with the relatively wide near‐field distribution perpendicular to the junction plane, which is deduced from the properties of the heterostructure optical waveguide.

Interactions between slow circuit waves and drifting carriers in InSb and Ge at 4.2°K

J.C. Freeman, V.L. Newhouse, and R.L. Gunshor

Appl. Phys. Lett. 22, 641 (1973); http://dx.doi.org/10.1063/1.1654538 (3 pages) | Cited 5 times

Online Publication Date: 16 October 2003

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Substantial interactions between drifting carriers in a semiconductor and slow circuit waves on meander lines have been demonstrated for the first time. Electronic gains in the meander‐meander line signal of up to 40 dB∕cm were obtained with Ge at 4.2°K. Although no net gain was achieved with respect to the ports of the meander lines due to the structure's high transmission loss of 20–30 dB, the results demonstrate the possibility of solid‐state slow‐wave amplification which has been the subject of many previous theoretical studies.

Intense superradiant emission at 496 μm from optically pumped methyl fluoride

T.A. DeTemple, T.K. Plant, and P.D. Coleman

Appl. Phys. Lett. 22, 644 (1973); http://dx.doi.org/10.1063/1.1654539 (3 pages) | Cited 11 times

Online Publication Date: 16 October 2003

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Intense superradiant emission has been observed from methyl fluoride excited by 0.6‐MW pulses from a high‐pressure CO2 laser. Pulses of ∼ 1 kW with a duration of ∼ 150 nsec have been obtained from a 5‐m‐long 40‐mm‐diam cell containing 0.7 Torr of methyl fluoride. This output represents an efficiency of converting infrared photons to far‐infrared photons of ∼ 5%. Evidence for partial waveguiding in the cell and for phase‐coherent amplification are presented.

Dielectric thin‐film optical branching waveguide

Hiroyoshi Yajima

Appl. Phys. Lett. 22, 647 (1973); http://dx.doi.org/10.1063/1.1654540 (3 pages) | Cited 43 times

Online Publication Date: 16 October 2003

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Glass thin‐film optical branching waveguides have been fabricated by sputtering. It is found that the dielectric branch has functions of mode filtering and mode conversion. The concept of dielectric branch offers many possibilities to integrated optical circuitry.

Charge‐coupled memory device

Y.T. Chan, B.T. French, and R.A. Gudmundsen

Appl. Phys. Lett. 22, 650 (1973); http://dx.doi.org/10.1063/1.1654541 (3 pages)

Online Publication Date: 16 October 2003

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Charge‐coupled devices with silicon‐nitride‐silicon‐oxide composite gate dielectric layers have been shown to exhibit electrically alterable static memory. The storage of charge und under a specific gate by combined charge transfer and tunneling into memory states and the detection of its presence at a later time have been demonstrated.

Gain and energy measurements on an HF∕DF electrically pulsed chemical laser

C.R. Jones

Appl. Phys. Lett. 22, 653 (1973); http://dx.doi.org/10.1063/1.1654542 (3 pages) | Cited 7 times

Online Publication Date: 16 October 2003

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The peak small‐signal gain and output energy of an electrically initiated chemical laser are measured for both HF and DF operation. For identical conditions of electrical discharge and gas mixture [SF6☒H2(D2)☒He], the DF laser small‐signal gain coefficient is about a factor of 2 below that for HF, while in the oscillator configuration the output energies for the two cases are equal. The gain threshold is determined for parasitic oscillations, which can be avoided only under medium conditions corresponding to relatively low output energy. The maximum parasitic‐free energy with DF is about ten times that with HF.

Laser oscillation from Ho3+ and Nd3+ ions in epitaxially grown thin aluminum garnet films

J.P. van der Ziel, W.A. Bonner, L. Kopf, S. Singh, and L.G. Van Uitert

Appl. Phys. Lett. 22, 656 (1973); http://dx.doi.org/10.1063/1.1654543 (2 pages) | Cited 21 times

Online Publication Date: 16 October 2003

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Pulsed and continuous laser operation of the Ho3+ 5I7→5I8 transition at 2.1 μm has been obtained at 77°K by using Y1.25Ho0.1Er0.55Tm0.5Yb0.6 Al5O12 thin films grown on Y3Al5O12 substrates. Oscillation at the 1.06‐μm 4F3∕2→4I11∕2 transition of Nd3+ has also been observed at 77 and 300°K from Y3Al5O12:Nd3+ films. The characteristics of these thin‐film waveguide lasers are discussed.

Generation of intense infrared radiation from an electron beam propagating through a rippled magnetic field

M. Friedman and M. Herndon

Appl. Phys. Lett. 22, 658 (1973); http://dx.doi.org/10.1063/1.1654544 (3 pages) | Cited 7 times

Online Publication Date: 16 October 2003

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Electromagnetic radiation in the far‐infrared region of the spectrum was produced by the interaction between a relativistic electron beam and a spatially modulated magnetic field. Power of the order of megawatts was observed at wavelengths greater than about 50 μ. The radiation does not originate from a simple synchrotron mechanism, and one has to invoke other processes.

Supersonic mixing nozzle for gas‐dynamic lasers

R. Borghi, A.F. Carrega, M. Charpenel, and J.‐P.E. Taran

Appl. Phys. Lett. 22, 661 (1973); http://dx.doi.org/10.1063/1.1654545 (3 pages) | Cited 4 times

Online Publication Date: 16 October 2003

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A supersonic mixing nozzle for CO2 gas‐dynamic lasers is presented. It is shown that satisfactory mixing can be obtained with an increase of the freeze efficiency over simple expansion nozzles for premixed flows. Gain constants in the vicinity of 3% cm−1 are found, and a twofold improvement of the thermal‐to‐optical conversion efficiency over conventional GDL is predicted.

Amplification competition in a double‐cavity flash‐pumped dye laser

Pierre Dezauzier, Armand Eranian, and Olivier de Witte

Appl. Phys. Lett. 22, 664 (1973); http://dx.doi.org/10.1063/1.1654546 (3 pages) | Cited 2 times

Online Publication Date: 16 October 2003

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A double‐cavity technique was used to control the duration of the flash‐pumped dye laser emission. Interaction between the two cavities of perpendicular polarization was possible because of the very rapid orientational relaxation of the dye in solution. 30‐ns pulses were obtained with a water solution of rhodamine 6G excited with a fast coaxial flash lamp.

A self‐stabilized 3.5‐μm waveguide He☒Xe laser

P.W. Smith and P.J. Maloney

Appl. Phys. Lett. 22, 667 (1973); http://dx.doi.org/10.1063/1.1654547 (3 pages) | Cited 13 times

Online Publication Date: 16 October 2003

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By building a He☒Xe laser within a hollow dielectric waveguide and by using a single isotope of Xe, we have been able to attain gains of 1000 dB∕m. The dispersion associated with these large gains significantly modifies the ``empty‐resonator'' mode spacing when such a medium is placed within a laser resonator. We describe experiments with a short single‐frequency waveguide He☒Xe laser in which the gain medium pulls the oscillating frequencies so that the laser always oscillates within ± (1∕100) (c∕2L) of the center of the Xe net‐gain curve, regardless of the physical length of the laser resonator.

Continuous uniform excitation of medium‐pressure CO2 laser plasmas by means of controlled avalanche ionization

Alan E. Hill

Appl. Phys. Lett. 22, 670 (1973); http://dx.doi.org/10.1063/1.1654548 (4 pages) | Cited 44 times

Online Publication Date: 16 October 2003

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A sequence of 50‐ to 75‐nsec high‐voltage pulses in combination with photoionization produce spatially uniform continuous electron densities of 2 × 1011 with a 10–20% ripple at 20 000 Hz in 150‐Torr CO2 laser mixes. A separate continuous electric field ranging from 3 to 6 kV∕cm atm is used to heat the electrons, which loads greater than 0.25 J∕cm3 atm into the plasma without arc breakdown. As is the case with electron beam plasmas, E∕P and ne may be controlled independently. Hence, electron beams, flow constrictions, etc., are not necessary to produce uniform plasmas for cw high‐power electric gas laser systems.

Inadvertent deep centers in n‐type GaP from Schottky barrier photocapacitance

B. Hamilton and B.L. Smith

Appl. Phys. Lett. 22, 674 (1973); http://dx.doi.org/10.1063/1.1654549 (3 pages) | Cited 10 times

Online Publication Date: 16 October 2003

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Deep levels arising from inadvertent defect centers have been studied in both liquid‐encapsulated‐Czochralski (LEC) and liquid‐phase‐epitaxial (LPE) n‐type GaP by using Schottky barrier photocapacitance. In LEC material the total concentration of deep levels in the upper half of the band gap is determined to be about 5×1016 cm−3; in LPE material, about 5×1014 cm−3. In the lower half of the band gap, optical emission of majority carriers and thermal emission of minority carriers are observed from two distinct levels at 0.4 and 0.1 eV above the valence band edge. These levels are found to have similar concentrations of about 1×1016 cm−3 in both LPE and LEC material.

Tunable cw Pb0.98 Cd0.02S diode lasers emitting at 3.5 μm: Applications to ultrahigh‐resolution spectroscopy

K.W. Nill, A.J. Strauss, and F.A. Blum

Appl. Phys. Lett. 22, 677 (1973); http://dx.doi.org/10.1063/1.1654550 (3 pages) | Cited 8 times

Online Publication Date: 16 October 2003

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Continuously tunable cw diode lasers that produce narrow‐line (1‐ to 10‐MHz linewidth) radiation in the 3.5‐μm region have been fabricated from Pb0.98Cd0.02S. Lasers operating at 10–20 K produced more than 1 mW of cw power distributed among several modes which could be tuned continuously > 1 cm−1 by adjusting the laser current. A spectral range of 30 cm−1 could be covered over the full operating range. Ultrahigh‐resolution (10−5 cm−1) spectra of H2CO have been obtained to demonstrate the potential application of these lasers to the identification of organic molecules by spectroscopy of their C☒H stretch absorption bands.

Measurement of the spectrum of a helical TEA CO2 laser

W.A. Stiehl and P.W. Hoff

Appl. Phys. Lett. 22, 680 (1973); http://dx.doi.org/10.1063/1.1654551 (3 pages) | Cited 4 times

Online Publication Date: 16 October 2003

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Measurements of the chirp of individual TEA CO2 laser pulses are reported. Rates of chirping during the peak and the tail are attributed to two different mechanisms. Spectrum analyzer results corroborate the time‐resolved measurements.

Suppression of hard bubbles in magnetic garnet films by ion implantation: Dependence on ion species, dose, energy, and annealing

R. Wolfe, J.C. North, and Y.P. Lai

Appl. Phys. Lett. 22, 683 (1973); http://dx.doi.org/10.1063/1.1654552 (3 pages) | Cited 23 times

Online Publication Date: 16 October 2003

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Hard bubbles in typical bubble garnets can be eliminated by ion implantation which produces a layer of planar magnetization at least a few hundred angstroms thick. Neon at doses in the 1014‐ions∕cm2 range is as effective as hydrogen at doses in the 1016‐ions∕cm2 range in suppressing hard bubbles without effecting domain wall coercivity or mobility. Annealing studies have shown that the thermal stability of the effect increases with increasing dose and decreasing energy of implantation and is sufficient to withstand maximum device processing temperatures and assure long lifetimes.

Magnetic domains of a sintered SmCo5 magnet

Kimiyoshi Goto, Tomoaki Sakurai, and Takashi Yazaki

Appl. Phys. Lett. 22, 686 (1973); http://dx.doi.org/10.1063/1.1654553 (2 pages) | Cited 5 times

Online Publication Date: 16 October 2003

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Magnetic domains of a press‐sintered SmCo5 magnet with a high intrinsic coercivity (IHc = 12 700 Oe) and energy product [(BH)max = 18.0 MGOe] were observed in the demagnetized state by the powder pattern technique. The domains on the surfaces parallel and perpendicular to the alignment direction and at grain boundaries are shown in detail. The domain structures observed are of the same type as those for thick crystals with high uniaxial anisotropy, such as MnBi and BaFe12O19.
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