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1 Jan 1973

Volume 22, Issue 1, pp. 1-52


Effects of electropolishing on the tunneling current in aluminum‐aluminum‐oxide‐aluminum diodes

Jovan Antula

Appl. Phys. Lett. 22, 1 (1973); http://dx.doi.org/10.1063/1.1654452 (2 pages) | Cited 4 times

Online Publication Date: 16 October 2003

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The electropolishing of Al☒Al2O3☒Al structures using low‐frequency (50 Hz) alternating current has been experimentally investigated. It is found that, by polishing, the tunnel film thickness could be increased up to 40% without changing the electrical capacitance of the film.

Fused‐silica‐core glass fiber as a low‐loss optical waveguide

Daisuke Kato

Appl. Phys. Lett. 22, 3 (1973); http://dx.doi.org/10.1063/1.1654461 (2 pages) | Cited 22 times

Online Publication Date: 16 October 2003

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A new type of glass fiber is discussed. The core of the fiber is pure fused silica, and the cladding is a high‐silica‐content glass. This type of glass fiber has potentially the lowest attenuation of light propagation. A light attenuation of approximately 20 dB∕km was measured at a 632.8‐nm wavelength in the preliminary work.

Quartz optical waveguide by ion implantation

David T.Y. Wei, William W. Lee, and Louis R. Bloom

Appl. Phys. Lett. 22, 5 (1973); http://dx.doi.org/10.1063/1.1654470 (3 pages) | Cited 8 times

Online Publication Date: 16 October 2003

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We have shown single‐mode surface optical waveguiding in lithium‐ion‐implanted fused quartz, and multimode buried waveguiding in argon‐ and lithium‐ion‐implanted fused quartz. Guide losses are observed to be of the order of 5 dB for the samples investigated for both species of ions. Described in this letter are the experimental procedures and parameters for ion implantation and the measurements for mode behavior as compared to theoretical models.

Convolution and correlation by nonlinear interaction in a diode‐coupled tapped delay line

T.M. Reeder and M. Gilden

Appl. Phys. Lett. 22, 8 (1973); http://dx.doi.org/10.1063/1.1654472 (3 pages) | Cited 10 times

Online Publication Date: 16 October 2003

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A new type of nonlinear delay‐line correlator is described which makes use of a tapped piezoelectric surface‐acoustic‐wave delay line and a series chain of forward‐biased semiconductor diodes. Nonlinear signal mixing in the diode chain is utilized to perform serial product convolution or correlation of arbitrary signal modulation applied at two input ports. Because of the large nonlinearity available with semiconductor diodes, insertion loss for the new correlator is relatively low, approximately 25 dB for the initial experiments reported here. Convolution and correlation experiments are described for an eight‐tap correlator operating with input and mixing frequencies in the 30‐ to 60‐MHz range.

Internal photoemission: CdS‐PVK and CdSe‐PVK

William R. Salaneck

Appl. Phys. Lett. 22, 11 (1973); http://dx.doi.org/10.1063/1.1654453 (3 pages) | Cited 13 times

Online Publication Date: 16 October 2003

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The electric field and temperature dependence of the quantum gain associated with the internal photoemission of holes from CdS and CdSe into poly(N‐vinyl carbazole), i.e., PVK, are discussed in terms of a simple model of energy‐loss scattering by holes near the PVK surface. Excellent qualitative agreement is obtained between simple analytical expressions derived on the model and data on CdS‐PVK and CdSe‐PVK.

Unstable resonators for CO2 electric‐discharge convection lasers

George R. Wisner, Martin C. Foster, and Paul R. Blaszuk

Appl. Phys. Lett. 22, 14 (1973); http://dx.doi.org/10.1063/1.1654454 (2 pages) | Cited 1 time

Online Publication Date: 16 October 2003

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A series of unstable resonators have been operated in a convective CO2 electric‐discharge laser, and the diffraction spreading angle of the output beams has been experimentally determined. Cavities with Fresnel numbers from 5.0 to 35 have been operated, and several of the resonators have produced essentially diffraction‐limited output at power levels up to 1500 W.

Accumulation‐ and inversion‐layer Hall mobilities in silicon films on sapphire

A.C. Ipri

Appl. Phys. Lett. 22, 16 (1973); http://dx.doi.org/10.1063/1.1654455 (3 pages) | Cited 3 times

Online Publication Date: 16 October 2003

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The temperature dependence of electron and Hall mobilities in accumulation and inversion layers is presented for silicon‐on‐sapphire films. The inversion‐layer mobilities, as a function of surface carrier density, are also given. It is suggested that the reduced mobility resulting in these layers is due to silicon‐oxygen complexes located near the film surface. From the data presented, it is expected that deep‐depletion n‐channel transistors will have approximately 40% higher effective mobilities than conventional inversion‐mode n‐channel devices on sapphire.

Ohmic contacts on n+‐ and p+‐Si by ion implantation

A. Feuerstein and S. Kalbitzer

Appl. Phys. Lett. 22, 19 (1973); http://dx.doi.org/10.1063/1.1654456 (2 pages) | Cited 3 times

Online Publication Date: 16 October 2003

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Thin layers of n+‐ and p+‐Si have been metallized by implantation of ion doses of 1017 Al∕cm2 at energies of 8 keV. Ohmic characteristics have been obtained after moderate annealing treatments.

Charge storage in ZnIn2S4 single crystals

N. Romeo, A. Dallaturca, R. Braglia, and G. Sberveglieri

Appl. Phys. Lett. 22, 21 (1973); http://dx.doi.org/10.1063/1.1654457 (2 pages) | Cited 31 times

Online Publication Date: 16 October 2003

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We observe that, when ZnIn2S4 monocrystals at a temperature below 170°K are illuminated by light of the gap energy, the dark resistance, after illumination, is lowered by about nine orders of magnitude. This high‐conductivity state persists until the crystals are either (a) warmed to room temperature, (b) exposed to light of a definite energy less than the gap width, or (c) placed in an electric field. We propose a level 1.76 eV above the valence band, with a repulsive barrier of 0.11 eV, which an electron must penetrate to enter this level and recombine.

Electron diffusion length in solution‐grown GaAs : Ge

K.L. Ashley, D.L. Carr, and Roberto Romano‐Moran

Appl. Phys. Lett. 22, 23 (1973); http://dx.doi.org/10.1063/1.1654458 (3 pages) | Cited 10 times

Online Publication Date: 16 October 2003

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The optical microprobe is used to measure electron diffusion lengths in solution‐grown p‐type layers of Ge‐doped GaAs. They are found to be ∼ 20 μ, which gives an electron lifetime of ∼ 5×10−8 sec.

Electro‐optic contrast observations in single‐domain epitaxial films of bismuth titanate

S.Y. Wu, W.J. Takei, and M.H. Francombe

Appl. Phys. Lett. 22, 26 (1973); http://dx.doi.org/10.1063/1.1654459 (3 pages) | Cited 26 times

Online Publication Date: 16 October 2003

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Electro‐optic switching has successfully been demonstrated on untwinned (010) epitaxial bismuth titanate films grown on (110) MgAl2O4 substrates. This result is achieved on large‐area films using an interdigitated electrode array structure which can be used both for electrical poling and subsequent electro‐optic address. A contrast ratio higher than 7:1 between the on and off states is obtained with a 10‐μm‐thick film. A gradual variation of the contrast ratio with switching field is observed, which gives the film a capability for grey scale.

Effect of a thin Permalloy layer on bubble‐domain stability

Y.S. Lin

Appl. Phys. Lett. 22, 29 (1973); http://dx.doi.org/10.1063/1.1654460 (2 pages) | Cited 1 time

Online Publication Date: 16 October 2003

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This letter reports a theoretical and experimental investigation on the effect of placing a thin Permalloy layer atop bubble‐domain materials. The Permalloy layer shifts and broadens the domain static bias field range because of the increase of bubble energy. The bias field shift effect starts diminishing in the presence of an in‐plane field. The experimental observations are satisfactorily explained by an analytical model in which the magnetostatic coupling energy between Permalloy and bubble is first calculated and then extended to Thiele's stability theory by a pertubation method.

Effects of cw power on the pulsed gas breakdown threshold in argon at 10.6‐μ radiation

Carlton D. Moody

Appl. Phys. Lett. 22, 31 (1973); http://dx.doi.org/10.1063/1.1654462 (2 pages) | Cited 6 times

Online Publication Date: 16 October 2003

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When the focused beams of a pulsed CO2 laser and a cw CO2 laser were superimposed, the pulsed gas breakdown threshold was raised. It was found that the increase in the threshold was dependent on the gas pressure and cw power. When the intensities obtained with different focal diameters were compared, it was found that the cw gas breakdown threshold has a 1∕r2 dependence on the radius of the focused cw power spot.

Laser‐induced gas breakdown initiated by ultraviolet photoionization

A.M. Robinson

Appl. Phys. Lett. 22, 33 (1973); http://dx.doi.org/10.1063/1.1654463 (3 pages) | Cited 11 times

Online Publication Date: 16 October 2003

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The threshold for laser‐induced gas breakdown at 10.6 μm has been investigated in the presence of a spark discharge. Lowering of the threshold was observed over that measured in the absence of the spark for several gases. In argon at 100 Torr, threshold was a factor of 3.9 lower with the spark 3.7 cm from the laser‐induced breakdown region.

Scaled photocount correlation of non‐Gaussian scattered light

Dennis E. Koppel and Dale W. Schaefer

Appl. Phys. Lett. 22, 36 (1973); http://dx.doi.org/10.1063/1.1654464 (2 pages) | Cited 8 times

Online Publication Date: 16 October 2003

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The photocount autocorrelation of non‐Gaussian scattered laser light is discussed as a tool for the study of both very dilute or highly correlated scattering systems. A scaled photocount correlation technique is introduced and shown to produce a function directly proportional to the correlation function of the integrated scattered intensity, independent of the field statistics. This technique overcomes the serious problems of interpretation that can arise when the commonly used clipped correlation technique is applied to non‐Gaussian fields. The scaled correlation technique is demonstrated experimentally with a simple scattering system, a small number of particles under uniform translational motion.

Remote spectroscopic analysis of ppm‐level air pollutants by Raman spectroscopy

Tomas Hirschfeld, E.R. Schildkraut, Harvey Tannenbaum, and David Tanenbaum

Appl. Phys. Lett. 22, 38 (1973); http://dx.doi.org/10.1063/1.1654465 (3 pages) | Cited 34 times

Online Publication Date: 16 October 2003

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The design and performance of a remote Raman spectrometer are described. The unit has been tested at ranges from several hundred yards to a half‐mile in full daylight under both clear atmosphere and fog conditions. Good S∕N ratios were obtained for the detection of atmospheric H2O and CO2 as well as SO2 (300 ppm m) and hydrocarbon vapors (17 ppm m) in controlled sources, with a range resolution of 10 m. This is more than two orders of magnitude better than the best published results to date.

Parametric amplification and oscillation in nonlinear backward scattering

Hsiung Hsu and Chung Yu

Appl. Phys. Lett. 22, 41 (1973); http://dx.doi.org/10.1063/1.1654466 (3 pages) | Cited 6 times

Online Publication Date: 16 October 2003

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See Also: Erratum

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The characteristics of backward‐traveling‐wave (BTW) parametric amplification and oscillation are analyzed. Effects of variations in pump excitation and interaction length on the stability of amplification, oscillation threshold, and over‐all gain, etc., are discussed in detail. In this type of interaction, a BTW signal is always amplified more effectively than an FTW (forward‐traveling‐wave) signal. The significance of BTW interactions for large pump excitation or long interaction length is also indicated.

Use of direct overtone excitation in the measurement of the HF(v=2) deactivation rate

M.J. Bina and C.R. Jones

Appl. Phys. Lett. 22, 44 (1973); http://dx.doi.org/10.1063/1.1654467 (2 pages) | Cited 15 times

Online Publication Date: 16 October 2003

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This letter reports the demonstration of direct optical overtone excitation of the second vibrational level of hydrogen fluoride. A unique variation of the laser‐excited‐fluorescence technique was employed in the experiment to achieve a significant nonequilibrium population of HF(v=2) within a room‐temperature mixture of HF and argon. The HF(v=2) level was excited by a pulse from a temperature‐tuned Nd:YAlO3 laser, and the resultant fluorescence was monitored. The Δv=1 fluorescence from the mixture revealed the presence of a double exponential decay. The preliminary data allow the interpretation of the two exponentials as representing the v=2→v=1 and v=1→v=0 collisional deactivations. This in turn has led to an approximate value for the ratio of the time constants of the processes of τ1∕τ2=2.2±0.4.

Channel optical waveguide directional couplers

S. Somekh, E. Garmire, A. Yariv, H.L. Garvin, and R.G. Hunsperger

Appl. Phys. Lett. 22, 46 (1973); http://dx.doi.org/10.1063/1.1654468 (2 pages) | Cited 97 times

Online Publication Date: 16 October 2003

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We report the first demonstration of channel optical waveguide directional couplers. The closely spaced channel waveguides were fabricated in GaAs by proton implantation. Optical coupling was observed at 1.15 μ with complete light transfer out of the initial channel into adjacent channels in lengths of typically 2 mm.

Laser‐beam writing on amorphous chalcogenide films: crystallization kinetics and analysis of amorphizing energy

K. Weiser, R.J. Gambino, and J.A. Reinhold

Appl. Phys. Lett. 22, 48 (1973); http://dx.doi.org/10.1063/1.1654469 (2 pages) | Cited 30 times

Online Publication Date: 16 October 2003

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By using laser pulses, the kinetics of crystallization of Te‐rich films were studied as a function of light intensity and pulse duration. The initial devitrification was found to be temperature activated (ΔE≃1–1.6 eV), and no evidence for photocrystallization was found. Amorphizing energies for 100‐nsec pulses ranged from 0.13 to 0.55 nJ∕μ2, depending on the degree of crystallization. Part of this increase is due to heat‐of‐fusion effects, but most of it is due to increased thermal conductivity with increased crystallization.

Noise figure calculation for the Rayleigh wave amplifier

G.S. Kino and L.A. Coldren

Appl. Phys. Lett. 22, 50 (1973); http://dx.doi.org/10.1063/1.1654471 (3 pages) | Cited 1 time

Online Publication Date: 16 October 2003

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The noise figure of a Rayleigh wave amplifier is calculated using the impedance field method of noise calculation. The coupling of noise in the semiconductor to the acoustic wave is obtained from a normal mode formula. The results indicate that relatively low noise figures should be obtainable, and that trapping phenomena can be the major source of noise excitation.
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