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15 Jan 1973

Volume 22, Issue 2, pp. 55-83


Observation of laser oscillation in a 1‐atm CO2☒N2☒He laser pumped by an electrically heated plasma generated via photoionization

J.S. Levine and A. Javan

Appl. Phys. Lett. 22, 55 (1973); http://dx.doi.org/10.1063/1.1654555 (3 pages) | Cited 33 times

Online Publication Date: 16 October 2003

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The photoionization of a large organic molecule, tri‐n‐propyl amine, mixed with a 1‐atm CO2☒N2☒He gas is used to produce a high‐electron‐density uniform large‐volume laser plasma. Photoionization by a two‐photon two‐step process is found to be the dominant mechanism when illumination is by a xenon flashlamp employing a quartz envelope. Electron density on the order of 1013∕cm3 is obtained. The electrons are heated by an externally applied electric field less intense than that required to produce avalanche breakdown. Laser oscillation is observed on the P(20) line of the 10.6‐μ CO2 band with a maximum output of 300 mJ obtained from a 0.02‐liter active volume (corresponding to 15 J∕liter). The energy output as a function of E∕P is studied and found to peak at a value below breakdown.

Divacancylike optical absorption in Si0.5Ge0.5 alloy

H.J. Stein

Appl. Phys. Lett. 22, 58 (1973); http://dx.doi.org/10.1063/1.1654556 (3 pages) | Cited 2 times

Online Publication Date: 16 October 2003

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The first absorption band for an irradiation‐induced defect in SiGe alloys has been observed at 2.15‐μm (90 K) in Si0.5Ge0.5 following neutron or proton bombardment. The 2.15‐μm band is similar in width and thermal stability to the 1.7‐μm divacancy band in Si, but the band position is closer to a 2.4‐μm band tentatively ascribed to divacancies in Ge. A distinct divacancylike band in the bombarded SiGe suggests either some structural order in the alloy or structural selectivity in defect formation. Absence of characteristic Si or Ge bands implies that the alloy is free from any significant amount of Si or Ge aggregates.

Imaging of surfaces with the exoelectron microscope

P. Bräunlich, B. Rosenblum, J.P. Carrico, L. Himmel, and P.K. Rol

Appl. Phys. Lett. 22, 61 (1973); http://dx.doi.org/10.1063/1.1654557 (3 pages) | Cited 11 times

Online Publication Date: 16 October 2003

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A simple exoelectron emission microscope is described, first images obtained from BeOceramic are reported, and potential applications of the device in surface characterization of a wide variety of solids are discussed.

Solid‐phase epitaxial growth of Si mesas from al metallization

H. Sankur, J.O. McCaldin, and John Devaney

Appl. Phys. Lett. 22, 64 (1973); http://dx.doi.org/10.1063/1.1654558 (3 pages) | Cited 49 times

Online Publication Date: 16 October 2003

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Si epitaxial growth from solution in solid Al onto crystal Si substrates was studied by scanning electron microscopy. Growth in reentrant corners of the substrate was found to be favored over growth onto a flat surface. For this reason, the smaller‐diameter oxide cuts used in integrated‐circuit fabrication, in which no portion of the exposed substrate Si is far from a reentrant corner, are favored sites for growth. Si growth readily fills in such oxide cuts forming mesa structures potentially useful in device construction. The probable cause for such preferential growth was indicated in pressure experiments which show that regions in the solid Al under relatively less compression are favored locations for growth.

Aluminum fluoride exploding‐wire laser

Walter W. Rice and Reed J. Jensen

Appl. Phys. Lett. 22, 67 (1973); http://dx.doi.org/10.1063/1.1654559 (2 pages) | Cited 6 times

Online Publication Date: 16 October 2003

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Intense aluminum fluoride laser pulses in the spectral range 12.5–13.5 μ were observed when fine aluminum wires were exploded into fluorine gas. The laser oscillation occurred during the expansion phase of the wire explosion.

Fabrication and Jc(H,T) measurements on Nb3Al0.75Ge0.25 ribbon

R. Löhberg, T.W. Eagar, I.M. Puffer, and R.M. Rose

Appl. Phys. Lett. 22, 69 (1973); http://dx.doi.org/10.1063/1.1654560 (3 pages) | Cited 12 times

Online Publication Date: 16 October 2003

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Ribbons of composition Nb3Al0.75Ge0.25 have been fabricated by swaging, rolling, and heat treatment. Measurements of Jc in steady transverse magnetic fields up to 150 kOe at temperatures up to 16°K show values of the order of 104 A∕cm2 at 13°K and 120 kOe, and 103 A∕cm2 at 16°K and 95 kOe.

Memory behavior of metal‐plasma‐anodized Al2O3 and SiO2‐semiconductor (MAOS) capacitors

R.V. Pappu and A.R. Boothroyd

Appl. Phys. Lett. 22, 72 (1973); http://dx.doi.org/10.1063/1.1654561 (3 pages) | Cited 2 times

Online Publication Date: 16 October 2003

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Fabrication details and experimental results are presented for metal‐Al2O3‐SiO2‐silicon capacitors intended as memory devices, for which the insulator layers are formed by plasma anodization. It is found that well‐controlled devices with stable characteristics may be realized by this method.

Efficient pulsed optical parametric oscillator with a tuning range from 0.415 to 2.1 μm

G. Nath and G. Pauli

Appl. Phys. Lett. 22, 75 (1973); http://dx.doi.org/10.1063/1.1654562 (2 pages) | Cited 5 times

Online Publication Date: 16 October 2003

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A LiIO3 crystal, placed inside a doubly resonant oscillator, was pumped with the second harmonic of a Q‐switched ruby laser. A 0.415‐ to 2.1‐μm tuning range for both signal and idler was obtained. The conversion efficiency from pump to signal power amounts to 8%. The peak power of the signal radiation was 10 kW and the pulse duration was 5 nsec.

Gigawatt photochemical iodine laser

K. Hohla and K.L. Kompa

Appl. Phys. Lett. 22, 77 (1973); http://dx.doi.org/10.1063/1.1654563 (2 pages) | Cited 24 times

Online Publication Date: 16 October 2003

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An oscillator‐amplifier iodine laser system has been set up to demonstrate the feasibility of high‐power operation of this laser. Pulse powers of 1.2 GW have been obtained with two amplifier stages. Technical details and relevant laser parameters are discussed.

Superfluorescence in N2 and H2 electron‐beam‐stabilized discharges

L.Y. Nelson, G.J. Mullaney, and S.R. Byron

Appl. Phys. Lett. 22, 79 (1973); http://dx.doi.org/10.1063/1.1654564 (2 pages) | Cited 12 times

Online Publication Date: 16 October 2003

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Previous N2 and H2 electronic transition lasers have been limited to short pulse durations (10−9–10−7 sec). Using an electron‐beam‐stabilized discharge in argon, nitrogen (or hydrogen), and hydrogen fluoride mixtures, we have observed repetitive superfluorescent pulses lasting 5–20 μsec. Optical‐cavity measurements verify that optical gain is present throughout the pulse duration at wavelengths in the nitrogen first‐ and second‐positive band systems and in a hydrogen near‐infrared band system. It is believed that HF serves to maintain a population inversion for a longer period of time by providing preferential collisional deactivation of the lower laser levels.

Analysis of formation of hafnium silicide on silicon

C.J. Kircher, J.W. Mayer, K.N. Tu, and J.F. Ziegler

Appl. Phys. Lett. 22, 81 (1973); http://dx.doi.org/10.1063/1.1654565 (3 pages) | Cited 20 times

Online Publication Date: 16 October 2003

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Backscattering of He ions and Seemann‐Bohlin x‐ray diffraction techniques have been used to investigate the composition and growth kinetics of hafnium silicide formed from thin films of hafnium sputter deposited on silicon. The stable‐phase HfSi was formed in the temperature region 550–750°C. Zirconium and argon impurities were present in the Hf films at the level of 2.5 at.%. During the formation of the HfSi phase, these impurities served as markers which were used to determine the diffusing species. We conclude that Si is the diffusing species.
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