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1 Feb 1973

Volume 22, Issue 3, pp. 85-117


Microwave power absorption by a plasma outside the electron cyclotron resonance region

S. Bernabei, R. De Dionigi, and M. Fontanesi

Appl. Phys. Lett. 22, 85 (1973); http://dx.doi.org/10.1063/1.1654572 (2 pages) | Cited 1 time

Online Publication Date: 16 October 2003

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Microwave power absorption has been studied in the production of a plasma using interdigital and helical coils in conditions different from electron cyclotron resonance. It is observed that the plasma can be maintained only when resonances of the hybrid type exist in the plasma column.

Stimulated emission from PrCl3

K.R. German, A. Kiel, and H. Guggenheim

Appl. Phys. Lett. 22, 87 (1973); http://dx.doi.org/10.1063/1.1654573 (3 pages) | Cited 25 times

Online Publication Date: 16 October 2003

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We have investigated the fluorescent and stimulated emission properties of PrCl3 as a function of the pump laser wavelength, pump power, and temperature. The previously reported laser emission at 645.2 nm has been studied at 295°K and at lower temperatures. At low temperatures we have observed stimulated emission at three new wavelengths, 616.8, 529.8, and 489.2 nm. The linewidths and lifetimes of various optical transitions have been measured and related to the observed optical gain at the above wavelengths. We have also observed stimulated output in 1% Pr in LaCl3.

ac liquid‐crystal light valve

T.D. Beard, W.P. Bleha, and S.‐Y Wong

Appl. Phys. Lett. 22, 90 (1973); http://dx.doi.org/10.1063/1.1654574 (3 pages) | Cited 35 times

Online Publication Date: 16 October 2003

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An ac‐operated liquid‐crystal light valve has been constructed and operated. The multilayer structure, consisting of a photoconductor, light‐absorbing layer, dielectric mirror, and liquid crystal, is capable of efficiently modulating a high‐intensity light beam with a comparatively weak light source. The dielectric mirror and absorbing layer provide high reflectance and optical isolation without the use of a metal mosaic reflector. The use of ac and insulated electrodes promises long lifetime. The light valve is applicable to television projection display and optical data processing.

Optically pumped N2O laser

T.Y. Chang and O.R. Wood

Appl. Phys. Lett. 22, 93 (1973); http://dx.doi.org/10.1063/1.1654575 (2 pages) | Cited 11 times

Online Publication Date: 16 October 2003

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Laser action at 10.8 μm has been obtained in pure N2O gas at pressures up to 270 Torr by optically pumping with the 4.465‐μm line of a TEA HBr laser. Possible extension of this pumping technique to other linear three‐atomic molecules and molecules with a linear three‐atomic skeletal is discussed.

An efficient electrical CO2 laser using preionization by ultraviolet radiation

O.P. Judd

Appl. Phys. Lett. 22, 95 (1973); http://dx.doi.org/10.1063/1.1654576 (2 pages) | Cited 39 times

Online Publication Date: 16 October 2003

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Investigations of a large‐volume high‐pressure pulsed electrical CO2 laser that employs volumetric photopreionization of the gas by ultraviolet radiation are reported. An optical energy extraction of 40 J∕literatm at 700 Torr and a conversion efficiency of 24% have been obtained.

Backscattering study on lateral spread of implanted ions

Seijiro Furukawa and Hideki Matsumura

Appl. Phys. Lett. 22, 97 (1973); http://dx.doi.org/10.1063/1.1654577 (2 pages) | Cited 36 times

Online Publication Date: 16 October 2003

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Without ambiguities due to the cutting angle of a mask edge and the annealing process, the lateral spread of implanted Kr ions into Si substrates has been directly measured by the He+ backscattering technique. The experimental results show good agreement with theoretical predictions.

Response of edge‐ and face‐electroded pyroelectric detectors to infrared laser signals

M. Simhony, A. Shaulov, and S. Lavi

Appl. Phys. Lett. 22, 99 (1973); http://dx.doi.org/10.1063/1.1654578 (2 pages) | Cited 3 times

Online Publication Date: 16 October 2003

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Expressions are given for the peak voltage responses to infrared laser signals in pyroelectric detectors with edge electrodes (EE) and face electrodes (FE). When the response is independent of the capacitance Cs of the samples, the FE detector has a much higher responsivity. When the response depends on Cs and the capacitance Ci of the preamplifier input is negligible for both samples, the EE design can give only a slightly higher response (the high gain expected in the literature comes from considering the EE sample as a parallel‐plate condenser). However, when CsEE << Ci << CsFE, the EE detector response is higher by a factor of ϵl∕Ci, where ϵ is the permittivity and l is the length of the edge electrodes.

Surface depletion of InSb by SiO and CaF2

F.C. Luo and M. Epstein

Appl. Phys. Lett. 22, 101 (1973); http://dx.doi.org/10.1063/1.1654566 (2 pages) | Cited 2 times

Online Publication Date: 16 October 2003

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Increase in resistance of thin films of InSb with thickness of vacuum‐deposited overlays of SiO and CaF2 indicates surface depletion in the semiconductor. Also, the equivalent depletion depth and the net trapped charge are evaluated for the case of a CaF2 insulator.

Electron diffusion in CdTe

A. Alberigi Quaranta, V. Borsari, C. Jacoboni, and G. Zanarini

Appl. Phys. Lett. 22, 103 (1973); http://dx.doi.org/10.1063/1.1654567 (3 pages) | Cited 18 times

Online Publication Date: 16 October 2003

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Electron diffusion as a function of applied field has been studied for CdTe at 300°K with the Monte Carlo technique. The high energy separation between central and satellite valleys makes the limitations on the use of the macroscopic equation of diffusion particularly severe. At fields around the threshold value for negative differential mobility, polar optical scattering produces uneven initial spreading of a delta distribution of electrons. Furthermore, at fields around and above threshold the large spread of electron velocities causes an initial diffusion much greater than that predicted by the macroscopic equation. This latter effect may be very important in small devices as, in particular, in the dynamics of Gunn domains.

Trap structure of pyrolytic Al2O3 in MOS capacitors

E. Harari and B.S.H. Royce

Appl. Phys. Lett. 22, 106 (1973); http://dx.doi.org/10.1063/1.1654568 (2 pages) | Cited 18 times

Online Publication Date: 16 October 2003

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See Also: Erratum

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The trap structure of the pyrolytic Al2O3 layer of MOS capacitors was investigated by a technique in which the capacitor was used as an integral detector of the charge trapped in the oxide. In all the samples studied, five trap levels were found to exist extending from 2.2 to 4.5 eV below the oxide conduction band. The spatial distribution of these traps was inferred from complementary photoconductivity measurements. This method is applicable to the study of the effects of radiation damage and ion implantation on the trap structure of this and other thin film insulators.

Effect of ionizing radiations on metal‐polymer‐silicon structures

Bui Ai, H. Carchano, and D. Sanchez

Appl. Phys. Lett. 22, 108 (1973); http://dx.doi.org/10.1063/1.1654569 (3 pages) | Cited 1 time

Online Publication Date: 16 October 2003

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The effect of electronic bombardment on metal‐polymer‐silicon structures is considered. The polymer film was obtained by polymerization of monomer vapor (styrene) in an ac glow discharge. The relative dielectric constant of the films is 3 and the dissipation factor is 0.01. Under 25‐keV electronic bombardment at various flux levels and with different polarizing voltages applied, the shifts of the C(V) curve are always in the opposite direction to that induced by the polarizing voltage. The displacement under irradiation is lower than observed with the metal‐silicon dioxide‐silicon structure. It is remarkable that the radiation effects are not permanent. The structures do not have any memory of irradiation constraints.

ir‐laser‐addressed thermo‐optic smectic liquid‐crystal storage displays

Frederic J. Kahn

Appl. Phys. Lett. 22, 111 (1973); http://dx.doi.org/10.1063/1.1654570 (3 pages) | Cited 86 times

Online Publication Date: 16 October 2003

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Thermally induced optical storage and erasure (local and nonlocal) of scattering centers in thin films of smectic liquid crystals has been demonstrated. These new thermo‐optic and electrothermo‐optic effects provide the basis for what is believed to be the first practical application of smectic liquid crystals, an infrared‐laser‐addressed light valve for the recording, storage, and display of high‐resolution graphic images.

Preswitching and postswitching phenomena in amorphous semiconducting films

M.P. Shaw, S.C. Moss, S.A. Kostylev, and L.H. Slack

Appl. Phys. Lett. 22, 114 (1973); http://dx.doi.org/10.1063/1.1654571 (4 pages) | Cited 9 times

Online Publication Date: 16 October 2003

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Low‐duty‐cycle pulsed dc switching experiments have been performed on a variety of thin‐film Te‐based semiconducting glasses. No premonitory effects are observed in the current‐time profile of the nonswitching off state. If, however, the threshold voltage is exceeded, a continuous current increase with time throughout the normal delay‐time regime (preswitching off state) is always observed prior to switching. In a given device or film this current rise is interrupted, independent of overvoltage, by the rapid switching transition at about the same relative current increment above the current background extrapolated to zero time (leakage current). In the switched or on (filamentary conduction) state the current level, as limited by the series load resistor, can condition the response of the device in the subsequent preswitched off state. For loads in excess of ∼1 kΩ, there is no effect on the preswitching off state characteristics whereas, for appreciably smaller loads, there is a continuous increase in delay time with increased pulse length (time spent in the previous on state). The results (i) indicate that the development of a filamentary instability begins at the onset of the pulse and (ii) show that the operating threshold voltage can be raised (returned to its virgin value) when the operating current is large for a sufficiently long time. These features are consistent with switching models that treat the ``formed'' switching element as a high‐conductance‐formed filamentary region (of not necessarily uniform composition) surrounded by a low‐conductivity glass.
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