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15 Mar 1973

Volume 22, Issue 6, pp. 267-305


The use of thermally stimulated ionic currents with a hyperbolic heating rate to measure sodium motion in rf‐sputtered SiO2 films

T.W. Hickmott

Appl. Phys. Lett. 22, 267 (1973); http://dx.doi.org/10.1063/1.1654633 (3 pages) | Cited 11 times

Online Publication Date: 16 October 2003

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Thermally stimulated ionic conductivity curves have been used to measure Na+ motion in rf‐sputtered SiO2 films. A hyperbolic heating rate, 1∕T=1∕T0 ‐ at, has been used to simplify data analysis. The energy for Na+ motion depends on bias voltage, on bias polarity, and on atomic defects in Si☒SiO2☒Al samples. Either Al positive or Al negative can be the direction of easy motion, depending on the nature of defects in the SiO2 film.

Photoemission from cesium‐oxide‐activated InGaAsP

L.W. James, G.A. Antypas, R.L. Moon, J. Edgecumbe, and R.L. Bell

Appl. Phys. Lett. 22, 270 (1973); http://dx.doi.org/10.1063/1.1654634 (2 pages) | Cited 16 times

Online Publication Date: 16 October 2003

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Zinc‐doped InGaAsP quaternary III‐V material of the proper composition range shows superior photoemission properties to either InGaAs or InAsP ternary material. The minority‐carrier diffusion length in the quaternary material is at least as long as that in InAsP and much longer than observed in InGaAs. The barrier height at the InGaAsP☒Cs2O interface is lowered by cooling, giving increased electron escape probability and new highs in quantum efficiency over a wide wavelength range. For example, a 1.06‐μ quantum efficiency of 7.5%∕incident photon was observed at − 90 °C.

Ultrafast optical Kerr effect in CS2 at 10.6 μm

T.C. Owen, L.W. Coleman, and T.J. Burgess

Appl. Phys. Lett. 22, 272 (1973); http://dx.doi.org/10.1063/1.1654635 (2 pages) | Cited 11 times

Online Publication Date: 16 October 2003

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This letter reports experiments that used a mode‐locked TEA CO2 laser to modulate a cw He☒Ne laser. This technique uses the optical Kerr effect in CS2. The optical Kerr coefficient, n2, at 10.6 μm is estimated from our data to be approximately 10−20 m2∕V2.

Circular etch pits in ion‐implanted amorphous silicon films

K.N. Tu, S.I. Tan, and B.L. Crowder

Appl. Phys. Lett. 22, 274 (1973); http://dx.doi.org/10.1063/1.1654636 (2 pages) | Cited 4 times

Online Publication Date: 16 October 2003

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Using a dilute HF solution as the etchant, we found very different etching behaviors between amorphous silicon films prepared by vapor deposition and by ion implantation. The latter are etched preferentially forming circular pits on the surface, but not the former. However, when the evaporated films were subjected to high dosages of ion bombardment and followed by etching, the same kind of circular pits were observed. We conclude that the bombardment of ions can cause weak spots on the amorphous Si surface which possess low resistance to the etching.

Raman gain in glass optical waveguides

R. H. Stolen and E. P. Ippen

Appl. Phys. Lett. 22, 276 (1973); http://dx.doi.org/10.1063/1.1654637 (3 pages) | Cited 177 times

Online Publication Date: 16 October 2003

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The small signal Raman gain in a single‐mode glass waveguide amplifier has been measured directly. The measured gain is in good agreement with that calculated from the Raman cross section. The cross section was determined by a comparison of the spontaneous Raman scattering of fused quartz and benzene.

Direct observation of backscatter electron distributions on surfaces

R. D. Heidenreich and L. F. Thompson

Appl. Phys. Lett. 22, 279 (1973); http://dx.doi.org/10.1063/1.1654638 (3 pages) | Cited 9 times

Online Publication Date: 16 October 2003

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The use of vinyl ferrocene monomer as a contaminating agent for the direct SEM observation of backscatter electron flux from target surfaces is described. The method readily yields a backscatter spatial current distribution as a function of radial distance r from the incident probe beam of the form JB(r) = exp(‐br). A geometric backscatter model is suggested as an alternate to that of Archard and is shown to be in good agreement with experiment and Monte Carlo calculations.

Transverse discharge pulsed CO2 chemical transfer laser

T.O. Poehler and R.E. Walker

Appl. Phys. Lett. 22, 282 (1973); http://dx.doi.org/10.1063/1.1654639 (2 pages)

Online Publication Date: 16 October 2003

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The exothermic chain reactions between deuterium and fluorine have been used to produce laser emission from carbon dioxide in a pulsed transfer laser. Stable mixtures of D2☒F2☒CO2☒He were initiated by a transverse electrical discharge in a system with good chemical and electrical efficiency. Laser pulses at 10.6 μm from D2☒F2☒CO2☒He mixtures at total pressure up to 250 Torr have been observed with energies up to 0.5 J.

Reflection loss of Rayleigh waves at cleaved edges in gallium arsenide

William H. Haydl

Appl. Phys. Lett. 22, 284 (1973); http://dx.doi.org/10.1063/1.1654640 (2 pages) | Cited 3 times

Online Publication Date: 16 October 2003

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The reflection losses of Rayleigh surface waves incident at 90° to a cleaved edge have been measured in semi‐insulating GaAs. The waves were propagating along the 〈110〉 direction on (100)‐oriented wafers with (110)‐cleaved surfaces. The reflection losses have been measured at 22, 38, and 72 MHz and were as low as 5 dB.

Charge‐coupled device with buried channels under electrode gaps

S. Shimizu, S. Iwamatsu, and M. Ono

Appl. Phys. Lett. 22, 286 (1973); http://dx.doi.org/10.1063/1.1654641 (2 pages) | Cited 1 time

Online Publication Date: 16 October 2003

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A new kind of charge‐coupled device with buried channels is described. This device is fabricated by forming ion‐implanted buried channels under the gaps between electrodes. Since the device does not depend on the surface potential under the gaps, a reliable and low‐operating‐voltage device with nonoverlapping gate electrodes can be made. Transfer efficiency greater than 99.5% per transfer has been obtained at 500 kHz.

cw laser power from carbon bisulfide flames

M.J. Linevsky and R.A. Carabetta

Appl. Phys. Lett. 22, 288 (1973); http://dx.doi.org/10.1063/1.1654642 (4 pages) | Cited 14 times

Online Publication Date: 16 October 2003

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Up to 6 W of cw laser power has been extracted from vibrationally excited CO produced in free‐burning CS2∕O2∕N2O flames burned at pressures of 10–40 Torr. A peak efficiency of approximately one laser photon for every eight fuel molecules has been obtained.

High‐sensitivity transmission‐mode GaAs photocathode

W.A. Gutierrez and H.D. Pommerrenig

Appl. Phys. Lett. 22, 292 (1973); http://dx.doi.org/10.1063/1.1654643 (2 pages) | Cited 7 times

Online Publication Date: 16 October 2003

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A high‐sensitivity negative‐electron‐affinity photocathode is reported which exhibits a luminous sensitivity of 330 μA∕lm in transmission‐mode operation. The structure and method of construction are described.

Optical Kerr effect in glass waveguide

R.H. Stolen and A. Ashkin

Appl. Phys. Lett. 22, 294 (1973); http://dx.doi.org/10.1063/1.1654644 (3 pages) | Cited 37 times

Online Publication Date: 16 October 2003

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We have observed light induced birefringence in glass optical waveguide. This effect can be observed at low powers in waveguide because of the high power densities which are maintained over long lengths of guide. This effect is potentially useful as a wide‐band pulse modulator or as a device for switching or measuring the length of picosecond pulses.

Magnetic field dependence of electrical conductivity for nonellipsoidal nonparabolic band structure

Chhi‐Chong Wu and Jensan Tsai

Appl. Phys. Lett. 22, 297 (1973); http://dx.doi.org/10.1063/1.1654645 (2 pages) | Cited 4 times

Online Publication Date: 16 October 2003

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Electrical conductivity for ultrasound propagating parallel to the dc magnetic field is calculated by using a quantum treatment which is valid at high frequencies. The energy band structure is assumed to be the Cohen nonellipsoidal nonparabolic (NENP) model. The results show that the ac longitudinal conductivity depends on the magnetic field, and some oscillations and discontinuities occur in the dependence of the conductivity on the magnetic field in the region of high frequencies and strong magnetic fields.

Image recording on FA centered crystals by He☒Ne laser

Y. Shono, T. Inuzuka, and T. Hoshino

Appl. Phys. Lett. 22, 299 (1973); http://dx.doi.org/10.1063/1.1654646 (2 pages) | Cited 5 times

Online Publication Date: 16 October 2003

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The color centers of type FA in KCl single crystals doped with NaCl or LiCl have been used for image recording by He☒Ne laser at room temperature. The optical transmission of the crystals changed linearly with change in the logarithm of incident energy in a certain range. By applying a linearly polarized light beam to anisotropic color centers (FA center), both negative and positive images were obtained from a single stored image.

Generation of 1182‐Å radiation in phase‐matched mixtures of inert gases

A.H. Kung, J.F. Young, and S.E. Harris

Appl. Phys. Lett. 22, 301 (1973); http://dx.doi.org/10.1063/1.1654647 (2 pages) | Cited 66 times

Online Publication Date: 16 October 2003

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See Also: Erratum

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Coherent radiation at 1182 Å is obtained by third‐harmonic generation in a phase‐matched mixture of Xe and Ar. For generation from 3547 to 1182 Å, Xe is negatively dispersive, and phase matching is obtained at a ratio of Xe:Ar=1:430. A conversion efficiency of 2.8% is obtained at an input power of 13 MW. As predicted by theory the conversion efficiency increases linearly to the limit of our available input power.

Violet luminescence of Mg‐doped GaN

H.P. Maruska, D.A. Stevenson, and J.I. Pankove

Appl. Phys. Lett. 22, 303 (1973); http://dx.doi.org/10.1063/1.1654648 (3 pages) | Cited 36 times

Online Publication Date: 16 October 2003

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The photoluminescent and electroluminescent properties of GaN☒GaN:Mg diodes are described. Visible violet electroluminescence was observed with excitation voltages of 10–20 V with the emission peak in the region of 2.9 eV. The I‐V characteristics showed I ∞ V3 in the region where light was emitted, and the observed power efficiency was approximately 10−5. A photoluminescence peak at 2.9 eV provided additional evidence for an acceptor level, associated with the Mg impurity, about 0.5 eV above the valence band.
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