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15 Apr 1973

Volume 22, Issue 8, pp. 349-425

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Relaxation rates of lower laser levels in CO2

T.A. DeTemple, D.R. Suhre, and P.D. Coleman

Appl. Phys. Lett. 22, 349 (1973); http://dx.doi.org/10.1063/1.1654668 (2 pages) | Cited 16 times

Online Publication Date: 16 October 2003

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The temporal decay of the laser pulse which occurs in the afterglow of a pulsed discharge in pure CO2 is shown to be controlled by the decay of the lower laser level. By varying the CO2 pressure, the relaxation rate of the 02°0 level was found to be ∼ 1.3 × 106∕Torr sec. The 10°0 level was found to be governed by two decay rates: a fast rate, ∼ 1.7 × 106∕Torr sec, and a slow rate, ∼ 1.7 × 105∕Torr sec. These rates were unaffected by the presence of He and are attributed to the V☒V equilibration processes within the ν1 and ν2 mode of CO2.

Green electroluminescence from CdS☒CuGaS2 heterodiodes

Sigurd Wagner, J.L. Shay, B. Tell, and H.M. Kasper

Appl. Phys. Lett. 22, 351 (1973); http://dx.doi.org/10.1063/1.1654669 (3 pages) | Cited 37 times

Online Publication Date: 16 October 2003

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Heterodiodes have been prepared by vapor‐deposition expitaxy of n‐type CdS on p‐type CuGaS2. Typical diodes emit green light under forward bias with external quantum efficiencies of 0.1% at 77 °K and 0.001% at room temperature. The radiative recombination results from electron injection into the CuGaS2.

Theory and application of two‐photon surface effect in infrared photoemission

Jick H. Yee

Appl. Phys. Lett. 22, 354 (1973); http://dx.doi.org/10.1063/1.1654670 (2 pages)

Online Publication Date: 16 October 2003

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A study of the theory of the two‐beam two‐photon surface photoelectric effect, which is based on the steady‐state scattering theory, shows that, if the intensities of the two photon beams and the two frequencies are properly chosen, one can use this effect for the detection of the CO2 frequency as well as other infrared frequencies. A numerical example for sodium is presented.

Raman scattering in thin‐film waveguides

G. Burns, F. Dacol, J.C. Marinace, B.A. Scott, and E. Burstein

Appl. Phys. Lett. 22, 356 (1973); http://dx.doi.org/10.1063/1.1654671 (2 pages) | Cited 18 times

Online Publication Date: 16 October 2003

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It is shown that Raman spectra can be obtained from thin films by using the films as waveguides for the exciting laser light and efficiently collecting the scattered light. We have applied this technique to single‐crystal GaN films epitaxially grown on c‐plate Al2O3. The measured polarized Raman spectra enable all the Raman active modes to be determined for the GaN (point group C6v).

On the reflections of normal‐incidence Bleustein‐Gulyaev surface waves

S. Pookaiyaudom

Appl. Phys. Lett. 22, 358 (1973); http://dx.doi.org/10.1063/1.1654672 (2 pages) | Cited 1 time

Online Publication Date: 16 October 2003

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Analysis indicates a reflection coefficient of unity for Bleustein‐Gulyaev surface waves normally incident upon a rectangular edge of a crystal of class C6v, having both the propagating surface and the end surface metallized.

Direct optical measurement of sodium hyperfine structure using a cw dye laser and an atomic beam

F. Schuda, M. Hercher, and C.R. Stroud

Appl. Phys. Lett. 22, 360 (1973); http://dx.doi.org/10.1063/1.1654673 (3 pages) | Cited 13 times

Online Publication Date: 16 October 2003

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A cw dye laser is described which allows short‐term frequency stability of 10–15 MHz. An experiment using this laser to measure the hyperfine absorption spectrum of the sodium D2 line is described. Results from this experiment are presented showing a resolution of the F = 2 → 3 and the F = 2 → 2 transitions.

Semiconductor lasers pumped by pulsed electric discharge in vacuum

F.H. Nicoll

Appl. Phys. Lett. 22, 363 (1973); http://dx.doi.org/10.1063/1.1654674 (2 pages) | Cited 3 times

Online Publication Date: 16 October 2003

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Lasing has been observed in several semiconductors pumped by electrons from a pulsed 5‐to 20‐kV vacuum arc. This method of pumping eliminates the hot‐cathode multielement electron gun and magnetic focusing means usually required for electron‐beam generation. At temperatures of 77 K and room temperature, CdS has shown well‐defined lasing with narrow directional output and sharp spectral lines. CdSe and GaAs have shown similar evidence of lasing at 77 K. The new technique opens up some possibilities for simple compact laser devices.

Optical waveguide modulation using nematic liquid crystal

D.J. Channin

Appl. Phys. Lett. 22, 365 (1973); http://dx.doi.org/10.1063/1.1654675 (2 pages) | Cited 28 times

Online Publication Date: 16 October 2003

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Devices are demonstrated for modulating light in optical waveguides using nematic liquid crystals. 100% modulation and response times of 35 μsec are achieved. Coupling of light into waveguide modes of a liquid layer is demonstrated.

Measurement of the V‐V energy transfer rate from CO(v = 2) using tunable parametric oscillator excitation

Philip B. Sackett, Audun Hordvik, and Howard Schlossberg

Appl. Phys. Lett. 22, 367 (1973); http://dx.doi.org/10.1063/1.1654676 (2 pages) | Cited 25 times

Online Publication Date: 16 October 2003

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A parametric oscillator has been employed to pump ground‐state carbon monoxide molecules in a gas‐phase sample directly to the second vibrational level. The decay of the population of this level via vibration‐vibration (V‐V) energy transfer with ground‐state molecules, CO(v = 2) + CO(v = 0) → CO(v = 1) + CO(v = 1), has been monitored as a function of pressure, resulting in the first experimental determination of the rate constant for this process, 6.2 × 104 sec−1 Torr−1 at 295 °K.

Laser operation of GaAs1−xPx:N (x = 0.37, 77 °K) on photopumped NN3 pair transitions

R.D. Dupuis, N. Holonyak, M.H. Lee, J.C. Campbell, M.G. Craford, D. Finn, and D.L. Keune

Appl. Phys. Lett. 22, 369 (1973); http://dx.doi.org/10.1063/1.1654677 (3 pages) | Cited 3 times

Online Publication Date: 16 October 2003

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Laser operation of GaAs1−xPx:N (x = 0.37, 77 °K) has been achieved by pumping the crystal below the fundamental energy gap on the NN3 transition. Photoluminescence experiments on the non‐N‐doped epitaxial GaAs1−xPx underlying the thin (≤ 25 μ) N‐doped layer indicate that the absorption of He☒Ne laser pump photons in GaAs1−xPx:N (x = 0.37) occurs only on the NN3 transition.

Electroabsorption in Aly Ga1−y As☒Alx Ga1−x As double heterostructures

F. K. Reinhart

Appl. Phys. Lett. 22, 372 (1973); http://dx.doi.org/10.1063/1.1654678 (3 pages) | Cited 28 times

Online Publication Date: 16 October 2003

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The electroabsorption observed in AlyGa1−yAs☒Alx Ga1−xAs (y < x) double heterostructures is strongly polarization dependent. The absorption of the TM mode which is polarized parallel to the electric heterojunction field is larger than that of the TE mode. This dichroism increases with decreasing photon energy for photon energies smaller than the band‐gap energy. The absorption is very large (up to 100 cm−1 for −10 V applied bias) for photon energies within 60 meV of the band gap. This electroabsorption effect can be used to make light intensity modulators, photodetectors, and polarizers. Very efficient intensity modulation has been demonstrated. The power necessary for 90% modulation is in the order of 0.1 mW∕MHz.

Microwave technique for measuring vibrational temperature in pulsed nitrogen discharges

O. Sahni and W.C. Jennings

Appl. Phys. Lett. 22, 375 (1973); http://dx.doi.org/10.1063/1.1654679 (2 pages) | Cited 4 times

Online Publication Date: 16 October 2003

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A microwave radiometric technique has been developed to measure the molecular vibrational temperature in the active period of a pulsed N2 discharge. The technique monitors decay of the electron average energy Ūe in the afterglow. Kinetic theory analysis shows that if the quasi‐steady‐state value of Ūe > 0.5 eV, it may be taken as a direct measure of the vibrational temperature Tv in the active period. For lower values of average energy, elastic and rotational energy losses must be included in the calculation of Tv. The results are the first experimental confirmation of the electron‐molecular coupling proposed by Hurle.

Control of fixed charge at Si☒SiO2 interface by oxidation‐reduction treatments

Frederick M. Fowkes and Dennis W. Hess

Appl. Phys. Lett. 22, 377 (1973); http://dx.doi.org/10.1063/1.1654680 (3 pages) | Cited 10 times

Online Publication Date: 16 October 2003

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Silicon dioxide films thermally grown on silicon have been reduced by exposure to low‐oxygen‐partial‐pressure atmospheres in mixtures of CO and CO2 at 910 °C. After several hours an equilibrium oxide charge was observed at each oxygen partial pressure. Capacitance voltage measurements on the reduced samples have shown a large increase in the oxide's positive charge. The increase in charge resulting from reduction can be eliminated by exposing the samples to oxygen for 1 h. These findings suggest a relationship between the oxide charge and oxygen vacancies.

Auger analysis of chlorine in ``HCl‐ or Cl2‐grown'' SiO2 films

N.J. Chou, C.M. Osburn, Y.J. van der Meulen, and R. Hammer

Appl. Phys. Lett. 22, 380 (1973); http://dx.doi.org/10.1063/1.1654681 (2 pages) | Cited 12 times

Online Publication Date: 16 October 2003

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Auger analysis of SiO2 films thermally grown in O2 in the presence of HCl or Cl2 shows that the incorporated Cl is unstable during the measurement. Cl profiling and mass‐spectrometric sampling indicate that ionized Cl is transported in the electric field to the vacuum‐oxide interface where it is desorbed by high‐energy electrons. This instability restricts the usefulness of the Auger technique.

Asymmetric deformation in net zero strain fatigue of iron single crystals

Harmon D. Nine

Appl. Phys. Lett. 22, 382 (1973); http://dx.doi.org/10.1063/1.1654682 (2 pages) | Cited 3 times

Online Publication Date: 16 October 2003

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Iron single crystals fatigued in torsion have shown asymmetric deformation. As the crystal samples are cycled in net zero strain, material is carried in only one circumferential direction over given sectors of the cylindrical sample surfaces. This effect is believed to be related to the asymmetry of slip on {112} and possibly {123} planes in body‐centered‐cubic (bcc) metals. Asymmetric deformation may be an important factor in fatigue of bcc metals because it results in much higher deformation per cycle than comparable cyclic loading in face‐centered‐cubic (fcc) metals.

Thermally stimulated capacitance for shallow majority‐carrier traps in the edge region of semiconductor junctions

C.T. Sah and J.W. Walker

Appl. Phys. Lett. 22, 384 (1973); http://dx.doi.org/10.1063/1.1654683 (2 pages) | Cited 23 times

Online Publication Date: 16 October 2003

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The use of the thermally stimulated capacitance (TSCAP) arising from temperature‐dependent Fermi level crossing of the trap level in the edge region of a p‐n junction is explored as a means of scanning the band gap for shallow‐level (60 meV from a band edge) majority‐carrier traps above 77°K. An example of the oxygen‐vacancy center (186 meV from the conduction band edge) in silicon is given as illustration. The edge region contribution also resolves the anomaly observed in previous applications of the TSCAP method.

Orientation of liquid crystals by surface coupling agents

Frederic J. Kahn

Appl. Phys. Lett. 22, 386 (1973); http://dx.doi.org/10.1063/1.1654684 (3 pages) | Cited 195 times

Online Publication Date: 16 October 2003

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Uniformly oriented thin liquid‐crystal layers are required for most liquid‐crystal device applications and physical investigations. Usual methods for obtaining orientation rely on a substrate interface which has an orienting action on the liquid‐crystal molecules. In previously described methods the orienting interfaces degrade chemically with time, thereby generating a corresponding degradation of the liquid‐crystal orientation. In the present work, silane surface coupling agents are used to obtain chemically stable interfaces and a wide variety of liquid‐crystal orientations.

Diffuse interface in Si (substrate)‐Au (evaporated film) system

T. Narusawa, S. Komiya, and A. Hiraki

Appl. Phys. Lett. 22, 389 (1973); http://dx.doi.org/10.1063/1.1654685 (2 pages) | Cited 39 times

Online Publication Date: 16 October 2003

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When a gold film is vacuum evaporated at around 50 °C onto a clean surface of single‐crystal silicon substrate, the adhesion of the film to the substrate is very strong, which suggests that some chemical reaction has taken place at the interface. Present study by Auger electron spectroscopy (AES) concludes the occurrence of the above reaction which induces a diffuse interface region in order to relax (or minimize) the interface energy. For the relaxation of silicon (110) and (111) interfaces, at least 45 and 20 monolayers of gold are necessary, respectively. The phase of the thus‐formed interface is concluded to be similar to that of the nonequilibrium solid alloy obtained by quenching from a solid Si☒Au eutectic liquid.

Very‐long‐path absorption cell for molecular spectroscopy

V. Vali, R. Goldstein, and K. Fox

Appl. Phys. Lett. 22, 391 (1973); http://dx.doi.org/10.1063/1.1654686 (2 pages)

Online Publication Date: 16 October 2003

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A method whereby a light beam is temporarily trapped between two retroreflectors was adapted for the use of very‐long‐path absorption spectroscopy. An absorption path length of 20 km has been obtained with this method. By optimizing all the components for a preselected wavelength band, a path length of the order of 1000 km can be obtained.

Studies of initial oxidation on silicon‐iron alloy (100) by means of work function and Auger electron spectroscopy

Kazuyuki Ueda and Ryuichi Shimizu

Appl. Phys. Lett. 22, 393 (1973); http://dx.doi.org/10.1063/1.1654687 (3 pages) | Cited 3 times

Online Publication Date: 16 October 2003

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An initial oxidation process is studied on 5.59 at. % Si☒Fe alloy (100) and iron (100) single crystals by the photoelectric work function combined with Auger electron spectroscopy in the low‐pressure range of oxygen (10−8−10−6 Torr). A 46‐V Auger peak of iron is split into two peaks (41 and 49 V) followed by an oxygen peak as the iron is oxidized. Oxidation at ∼ 10−6 Torr brings about an abrupt increase in the work function in consequence of the chemisorption of oxygen on the sample.

Interferometric observations of kinetic cooling

Louis Sica

Appl. Phys. Lett. 22, 396 (1973); http://dx.doi.org/10.1063/1.1654688 (3 pages) | Cited 10 times

Online Publication Date: 16 October 2003

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By using a three‐beam interferometer, the time constant associated with kinetic cooling has been measured as a function of water vapor concentration in atmospheres of N2 with fixed CO2 concentrations in the 400‐ to 800‐ppm range. Measurements have also been made in similar atmospheres with the addition of 10% O2. Least‐squares fits to the data are consistent with theoretical predictions when extrapolated to zero water vapor concentration. When water vapor is important, however, the experimentally observed relaxation times are considerably shorter than the predicted times.

Surface mobility measurement using acoustic surface waves

A. Bers, J.H. Cafarella, and B.E. Burke

Appl. Phys. Lett. 22, 399 (1973); http://dx.doi.org/10.1063/1.1654689 (3 pages) | Cited 16 times

Online Publication Date: 16 October 2003

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The sheet mobility of accumulated electrons on silicon has been determined by measuring the acoustoelectric current which accompanies the interaction between these electrons and piezoelectric surface waves on LiNbO3. The advantages of this method are (a) it is a direct mobility measurement (not requiring a knowledge of density), (b) the effect of surface states may be made negligible, (c) it is a zero‐average applied‐field measurement, (d) both majority‐ and minority‐carrier mobilities may be measured on the same sample. By using high‐resistivity (30 000 Ω cm) silicon with an accumulated surface, the sheet density was varied from 1.5×1010 to 5×1011 cm−2. Over this range the mobility was determined to vary from 1100 to 450 cm2∕V sec, respectively.

Observation of Raman scattering by SO2 in a generating plant stack plume

S.H. Melfi, M.L. Brumfield, and R.W. Storey

Appl. Phys. Lett. 22, 402 (1973); http://dx.doi.org/10.1063/1.1654690 (2 pages) | Cited 11 times

Online Publication Date: 16 October 2003

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Raman scattering by SO2 in an electrical generating plant stack plume has been observed using an optical radar system. Good qualitative agreement is evident between SO2 back‐scatter intensity and the plant's electrical power output.

Threshold voltage and ``gain'' term β of ion‐implanted enhancement‐mode n‐channel MOS transistors

Mototaka Kamoshida

Appl. Phys. Lett. 22, 404 (1973); http://dx.doi.org/10.1063/1.1654691 (2 pages) | Cited 7 times

Online Publication Date: 16 October 2003

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Strong dose dependence was observed in the relation between threshold voltage and forward back‐gate bias, although in the case of thick depletion layers (reverse back‐gate bias) the characteristics showed no dependence of the subsurface concentration. Due to the higher concentration at the subsurface, the gain term β, which decreases with increasing implantation dose, also shows stronger reduction at low field, so that the concave β‐vs‐field characteristics change to convex curves in the case of higher dose.

Defect photoconductivity of anodic Ta2 O5 films

J.H. Thomas

Appl. Phys. Lett. 22, 406 (1973); http://dx.doi.org/10.1063/1.1654692 (3 pages) | Cited 13 times

Online Publication Date: 16 October 2003

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Photoconductive properties of anodic oxide films grown on β‐Ta films have been measured at room temperature as a function of incident wavelength between 1000 and 500 nm (1.2–2.5 eV). Analysis of the spectral response of photoconductivity on thick (5200 Å) and thin (800 Å) oxides indicates the presence of a defect conduction band edge energetically at 1.5 eV below the oxide conduction band.
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