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15 Dec 1973

Volume 23, Issue 12, pp. 651-705


Secondary defects in phosphorus‐implanted silicon

Masao Tamura

Appl. Phys. Lett. 23, 651 (1973); http://dx.doi.org/10.1063/1.1654779 (3 pages) | Cited 26 times

Online Publication Date: 9 October 2003

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Transmission electron microscopic observations have been made on 100‐keV phosphorus‐implanted silicon layers with a dose of 5 × 1014∕cm2 as a function of implantation temperature and the subsequent annealing treatment. The annealing behavior of secondary defects is strongly dependent upon the implantation temperature. Also, the nature of dislocation loops formed in the implanted layers shows implantation temperature dependence: dislocation loops in room‐temperature implanted layers are predominantly interstitial in nature, whereas in layers implanted at higher temperatures than 500 °C they are predominantly of vacancy type, and both types of loops coexist in 200–400 °C implanted samples.

Laser damage threshold for dielectric coatings as determined by inclusions

David Milam, R. A. Bradbury, and Michael Bass

Appl. Phys. Lett. 23, 654 (1973); http://dx.doi.org/10.1063/1.1654780 (4 pages) | Cited 14 times

Online Publication Date: 9 October 2003

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By studying the morphology of threshold damage and observing for the first time the predicted ``pulse duration‐inclusion size'' relationship, it is shown that the threshold for laser damage to nonabsorbing dielectric coatings is determined by the presence of metallic or highly absorbing nonmetallic inclusions.

Laser‐induced inclusion damage at surfaces of transparent dielectrics

N. L. Boling and G. Dubé

Appl. Phys. Lett. 23, 658 (1973); http://dx.doi.org/10.1063/1.1654781 (3 pages) | Cited 4 times

Online Publication Date: 9 October 2003

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Q‐switched laser‐induced damage to transparent surfaces is shown to occur in many cases without the formation of a bright plasma. This ``aplasmic'' damage is apparently due to absorption by submicron inclusions. The prominence of damage is a function of material, polishing compound, and geometry of the test situation. Because aplasmic damage can be difficult to detect, it is suggested that the results of experiments conducted with small beams, especially when plasma formation is used as a definition of damage, be interpreted with caution. Damage thresholds of several materials are reported incidentally.

The role of linear dispersion in plane‐wave self‐phase modulation

Robert A. Fisher and W. Bischel

Appl. Phys. Lett. 23, 661 (1973); http://dx.doi.org/10.1063/1.1654782 (3 pages) | Cited 22 times

Online Publication Date: 9 October 2003

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It is shown by computer calculation that linear dispersion and self‐phase modulation can strongly couple to influence pulse propagation phenomena. Pulses become distorted temporally as they propagate, and, under certain circumstances, optical shocks can form on the leading edge (in time) of a pulse. Some interesting cases are considered for pulse propagation in CS2. The pulse compression scheme of Fisher, Kelley, and Gustafson is modified to take self‐dispersive effects into consideration.

Proton‐implanted optical waveguide detectors in GaAs

H. Stoll, A. Yariv, R. G. Hunsperger, and G. L. Tangonan

Appl. Phys. Lett. 23, 664 (1973); http://dx.doi.org/10.1063/1.1654783 (2 pages) | Cited 24 times

Online Publication Date: 9 October 2003

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Defect levels introduced by implanting GaAs with high‐energy protons give rise to optical absorption at wavelengths greater than that of the normal absorption edge at 0.9 μ. Optical waveguide detectors may be fabricated by taking advantage of this absorption mechanism in the presence of a Schottky barrier depletion layer. Detector response times less than 200 ns and external quantum efficiencies of 16% have been observed.

Effect of alloying behavior on the electrical characteristics of n‐GaAs Schottky diodes metallized with W, Au, and Pt

A. K. Sinha and J. M. Poate

Appl. Phys. Lett. 23, 666 (1973); http://dx.doi.org/10.1063/1.1654784 (3 pages) | Cited 85 times

Online Publication Date: 9 October 2003

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Electrical studies of W∕n‐GaAs Schottky diodes have shown that aging at 350 or 500 °C does not significantly change the forward I‐V characteristics of the diodes. Using 4He+ backscattering analysis, it is shown that the W∕GaAs interface of simulated diodes does not exhibit any evidence of interdiffusion or reaction. By contrast, considerable alloying occurs in both Au∕GaAs and Pt∕GaAs systems. In the former, Ga outdiffuses to the surface of Au and Au diffuses into GaAs upon aging at 250 or 350 °C; this has the effect of decreasing the barrier height ϕB from 0.9 to [inverted lazy s] 0.6 V and increasing the ideality parameter n from 1.0 to [inverted lazy s] 1.2. Interdiffusion in the Pt∕GaAs couples, aged at 500 °C, results in the formation of a layered arrangement of type PtGa∕PtAs2∕GaAs. The PtAs2∕n‐GaAs interface is associated with a slightly higher ϕB ([inverted lazy s] 0.89 V) than that found for the Pt∕n‐GaAs interface (ϕB [inverted lazy s] 0.84 V).

Phase‐matched far‐infrared generation by optical mixing of dye laser beams

K. H. Yang, J. R. Morris, P. L. Richards, and Y. R. Shen

Appl. Phys. Lett. 23, 669 (1973); http://dx.doi.org/10.1063/1.1654785 (3 pages) | Cited 31 times

Online Publication Date: 9 October 2003

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We report the use of a dual‐frequency dye laser system to generate continuously tunable far‐infrared radiation over the frequency range from 20 to 190 cm−1. We have investigated both collinear (forward and backward) and noncollinear phase matching in LiNbO3 over most of this frequency range and forward collinear phase matching in ZnO, ZnS, CdS, and CdSe at selected frequencies.

Short‐pulse excitation of a xenon molecular dissociation laser at 172.9 nm by relativistic electrons

Stephen C. Wallace, R. T. Hodgson, and R. W. Dreyfus

Appl. Phys. Lett. 23, 672 (1973); http://dx.doi.org/10.1063/1.1654786 (3 pages) | Cited 7 times

Online Publication Date: 9 October 2003

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Laser action at 172.9 nm has been observed in xenon and krypton‐xenon mixtures following short‐pulse excitation (2.5 nsec) by a relativistic electron beam. Peak powers [inverted lazy s] 80 kW cm−2 in a 5‐nsec pulse were obtained. The pumping sheme used in this work is noteworthy because its high efficiency has made it possible to utilize a simple compact electron accelerator (total electron beam energy 6 J) for excitation. The present short‐pulse data suggest that the rapid decrease in energy efficiency of this laser at high xenon pressures may be due to excited‐state quenching by ground‐state xenon atoms.

Velocity dependence of collision‐broadening cross section observed in an infrared transition of NH3 gas at room temperature

A. T. Mattick, A. Sanchez, N. A. Kurnit, and A. Javan

Appl. Phys. Lett. 23, 675 (1973); http://dx.doi.org/10.1063/1.1654787 (4 pages) | Cited 33 times

Online Publication Date: 9 October 2003

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The velocity‐selective characteristic of the interaction between a monochromatic radiation field and a Doppler‐broadened molecular transition is utilized to obtain a narrow saturation resonance for molecules with a given velocity component along the propagation direction of the radiation field. The width of the observed resonance gives the dependence of collision broadening on molecular velocity. The effect is observed in an infrared transition in NH3 for self‐broadening and foreign gas broadening by Xe.

Far‐infrared step‐tunable coherent radiation source: 70 μm to 2 mm

B. Lax, R. L. Aggarwal, and G. Favrot

Appl. Phys. Lett. 23, 679 (1973); http://dx.doi.org/10.1063/1.1654788 (3 pages) | Cited 19 times

Online Publication Date: 9 October 2003

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Noncollinear mixing of radiation from CO2 TEA lasers has been used to generate phase‐matched far‐infrared difference‐frequency radiation in GaAs. The wavelength of the far‐infrared radiation was tuned from [inverted lazy s] 70 μm to 2 mm in small steps by selecting the frequencies of the two CO2 lasers by means of intracavity diffraction gratings. A theoretical analysis of the two‐dimensional phase matching is presented.

Photodiodes fabricated in epitaxial PbTe by Sb+ ion implantation

J. P. Donnelly and H. Holloway

Appl. Phys. Lett. 23, 682 (1973); http://dx.doi.org/10.1063/1.1654789 (2 pages) | Cited 7 times

Online Publication Date: 9 October 2003

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Photodiodes in thin films of epitaxial PbTe grown on BaF2 have been fabricated using Sb+ ion implantation to create an n‐type layer in p‐type films. At 77 °K, 15‐mil‐square diodes had typical zero‐bias resistances of 1 MΩ. With the infrared radiation incident on the n‐type implanted layer, peak detectivities at 5.3 μm of 4.5 χ 1011 cm Hz1∕2∕W were observed in reduced background. Quantum efficiencies were typically 55%. With the radiation incident on the p‐type side through the BaF2 substrate, the detectivity was much more sharply peaked with the peak occurring at 5.5 μm. The peak detectivity and quantum efficiency values in this case were similar to those for incidence on the n‐type implanted layer.

cw submillimeter laser generation in optically pumped Stark‐tuned NH3

H. R. Fetterman, H. R. Schlossberg, and C. D. Parker

Appl. Phys. Lett. 23, 684 (1973); http://dx.doi.org/10.1063/1.1654790 (3 pages) | Cited 9 times

Online Publication Date: 9 October 2003

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Submillimeter laser action has been achieved in ammonia by Stark shifting vibrational absorption lines into resonance with a CO2 laser pump. In two of the three observed cases the absorption line was between states of the same parity, i.e., forbidden in the absence of the applied Stark field. Stark tuning of a vibrational absorption into resonance with a pump laser line is a general technique which should greatly increase the number of stable cw submillimeter lines available at milliwatt power levels.

X‐ray point‐source projection photography with a laser‐produced source

J. F. Holzrichter, C. M. Dozier, and J. M. McMahon

Appl. Phys. Lett. 23, 687 (1973); http://dx.doi.org/10.1063/1.1654791 (3 pages) | Cited 4 times

Online Publication Date: 9 October 2003

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Laser‐produced plasmas are shown to have characteristics useful for high‐resolution subnanosecond x‐ray radiography. Plasmas produced by 3‐J subnanosecond 1.06‐μm laser pulses focused onto an Al target emit x rays (≳1.5 keV) from a 50‐μm‐diam volume in the order of 1 nsec. Such sources may be useful to probe other plasmas.

Staging of theta pinches using laser‐heat addition and magnetic compression

Alan L. Hoffman and George C. Vlases

Appl. Phys. Lett. 23, 690 (1973); http://dx.doi.org/10.1063/1.1654792 (3 pages) | Cited 11 times

Online Publication Date: 9 October 2003

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The thermodynamics of using laser heating in conjunction with magnetic compression in θ‐pinch plasmas is discussed. It is shown that the minimum laser energy required to achieve a given plasma filling factor Λ (ratio of plasma to plasma tube area) is Elaser = Λ2∕3Eplasma and that any filling factor up to Λ = 1 can be achieved. The proposed schemes have important implications for either increasing the performance of standard θ pinches or for replacing the single‐turn θ‐pinch coil by a multiturn solenoid.

Strong axial laser heating of a theta‐pinch plasma

Alan L. Hoffman

Appl. Phys. Lett. 23, 693 (1973); http://dx.doi.org/10.1063/1.1654793 (3 pages) | Cited 24 times

Online Publication Date: 9 October 2003

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Holographic interferograms are shown of θ‐pinch plasmas heated axially by 35 J of 10.6‐μm radiation. One hundred percent conversion of laser to plasma thermal energy is indicated by the resultant plasma expansion and inferred temperature increase from 10 to 65 eV. The heated plasma column is 10 cm long by 6 mm in diameter and at an electron density of about 5 × 1017 cm−3. The laser heating process is seen to produce a self‐trapping density minimum on axis in contrast to the density maximum encountered in normal unheated θ pinches. This has significant implications for the high‐density laser‐heated long‐solenoid approach to fusion.

Homogeneity requirements for minimizing self‐focusing damage by strong electromagnetic waves

J. R. Jokipii and J. Marburger

Appl. Phys. Lett. 23, 696 (1973); http://dx.doi.org/10.1063/1.1654794 (3 pages) | Cited 6 times

Online Publication Date: 9 October 2003

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The Rytov approximation for wave propagation in random media is generalized to include the effects of self‐focusing. Solutions are obtained which show how the intensity fluctuations, which are either initially present in the wave or which are induced by the random inhomogeneities in the media, grow catastrophically. These solutions may be used to obtain conditions on the homogeneity of the medium, or of the incident beam, for reduction or elimination of catastrophic self‐focusing in the medium.

Temperature dependence of the lasing transition in high‐purity GaAs

S. R. Chinn, J. A. Rossi, and C. M. Wolfe

Appl. Phys. Lett. 23, 699 (1973); http://dx.doi.org/10.1063/1.1654795 (3 pages) | Cited 2 times

Online Publication Date: 9 October 2003

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We have measured the lasing energy of optically pumped high‐purity GaAs from 2 to 300 K. Low‐temperature results show strong many‐body effects in the band‐to‐band lasing below the single‐particle band‐gap energy, and the high‐temperature data indicate that the lasing energy approaches the band gap measured by photoconductivity.

Refractive index measurements on magnetic garnet films

B. C. McCollum, W. R. Bekebrede, M. Kestigian, and A. B. Smith

Appl. Phys. Lett. 23, 702 (1973); http://dx.doi.org/10.1063/1.1654796 (2 pages) | Cited 18 times

Online Publication Date: 9 October 2003

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Refractive‐index‐versus‐wavelength data were determined from 509 to 633 nm for a number of bubble memory rare‐earth garnet films. Using these data, the film thickness of these materials can be determined with an accuracy of 1–1.5%.

Integrated dE‐E detector system made by ion implantation

A. Kostka and S. Kalbitzer

Appl. Phys. Lett. 23, 704 (1973); http://dx.doi.org/10.1063/1.1654797 (2 pages)

Online Publication Date: 9 October 2003

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Boron and phosphorus ions of 8‐MeV and 6‐keV energy, respectively, have been implanted into silicon single crystals to form a n+‐n‐p+‐n‐n+ structure. Tests of this duodiode nuclear detector system with 5.5‐MeV α particles yielded resolutions of about 100 keV (FWHM).
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