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1 Jul 1973

Volume 23, Issue 1, pp. 1-51


Interpretation of Pt3Co FIM images as investigated with an atom probe

T. T. Tsong, S. V. Krishnaswamy, S. B. McLane, and E. W. Müller

Appl. Phys. Lett. 23, 1 (1973); http://dx.doi.org/10.1063/1.1654717 (3 pages) | Cited 17 times

Online Publication Date: 9 October 2003

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Cobalt atoms in ordered Pt☒Co alloys are not imaged in the field ion microscope, although in the lattice the Co atoms occupy sites equivalent to those of the Pt atoms. Using the atom‐probe FIM, we show that the invisibility of the Co atoms in Pt3Co is caused by selective field ionization of the image gas above Pt atoms only, rather than by the absence of Co atoms in the surface by preferential field evaporation.

Surface wave correlator via space charge nonlinearity

I. Drukier, W. C. Wang, and P. Das

Appl. Phys. Lett. 23, 4 (1973); http://dx.doi.org/10.1063/1.1654729 (3 pages) | Cited 6 times

Online Publication Date: 9 October 2003

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The interaction of an acoustic surface wave, propagating in a piezoelectric substrate, with an electric (pump) field induced in a nearby semiconductor produces an acoustic wave which is the correlation of the pump and surface wave signals. The theory of the interaction and experimental verification of the theoretical predictions are presented.

High‐efficiency secondary‐electron emission from sputtered MgO☒Au cermets

Victor E. Henrich and John C. C. Fan

Appl. Phys. Lett. 23, 7 (1973); http://dx.doi.org/10.1063/1.1654735 (2 pages) | Cited 18 times

Online Publication Date: 9 October 2003

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We have obtained high‐efficiency secondary‐electron emission from a new sputtered cermet system, MgO☒Au. Peak yields of 8 and quantum gain for primary‐electron energies as low as 17 eV have been achieved on thick films without the presence of surface charging. The very small insulator particle sizes (< 50 Å) in the films permit removal of surface charge by tunneling to adjacent metallic regions. This type of emitter is potentially useful for secondary‐emitting cathodes in high‐power device applications as well as low‐power electron multiplication.

Dense plasma discharges for solid‐target heating

I. M. Vitkovitsky, L. S. Levine, D. Mosher, and S. J. Stephanakis

Appl. Phys. Lett. 23, 9 (1973); http://dx.doi.org/10.1063/1.1654736 (3 pages) | Cited 8 times

Online Publication Date: 9 October 2003

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Dense plasma channels formed by exploding‐wire discharges have been used to form very‐high‐current‐density electron beams. The interaction of the beam with the plasma lowers the mean electron energy relative to that to be gained in the accelerating potential of 106 V applied across the plasma. The current density of electrons incident on the anode and their energy distribution have been determined. Approximately 10% of the current at the anode contains electrons with energy greater than 25 keV. The current density associated with these electrons exceeds 107 A∕cm2. The power delivered to the anode approaches 1012 W∕cm2, which leads to strong anode heating. X‐ray spectroscopy of the radiation emitted from the anode and of neutron production in deuterated anodes was used to deduce a target temperature of 0.1–1.0 keV.

The effect of dust on 10.6‐μm laser‐induced air breakdown

D. E. Lencioni

Appl. Phys. Lett. 23, 12 (1973); http://dx.doi.org/10.1063/1.1654718 (3 pages) | Cited 69 times

Online Publication Date: 9 October 2003

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Laser‐induced breakdown in very clean air at 10.6 μm is shown to have a threshold of 3 × 109 W∕cm2 for large beams and is described well by microwave breakdown theory. Dust particles are shown to lower the threshold by an amount which is greater for larger particles and higher vapor temperatures. There is a minimum in threshold for large particles, which for 200‐nsec pulse length is ≤ 108 W∕cm2, corresponding to an energy fluence of 10–20 J∕cm2. These results are explained qualitatively by the increase in inverse bremsstrahlung rate caused by exploding particles.

Experimental confirmation of the Fowler‐Nordheim law for large‐area field emitter arrays

D. K. Schroder and R. N. Thomas

Appl. Phys. Lett. 23, 15 (1973); http://dx.doi.org/10.1063/1.1654719 (2 pages) | Cited 8 times

Online Publication Date: 9 October 2003

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It is well known that single field emitters obey the Fowler‐Nordheim (F‐N) relationship. We show here that large‐area emitters, with as many as 106 emitters participating in the emission process, also obey the F‐N law, giving straight lines on such plots.

Plasma heating by an intense relativistic electron beam

C. A. Kapetanakos and D. A. Hammer

Appl. Phys. Lett. 23, 17 (1973); http://dx.doi.org/10.1063/1.1654720 (3 pages) | Cited 43 times

Online Publication Date: 9 October 2003

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A 400‐keV 40‐kA 50‐nsec‐duration relativistic electron beam is injected into a plasma confined in a magnetic mirror. It is found that the coupling efficiency of beam energy into the plasma at fixed magnetic field is optimum when the beam and plasma densities are comparable, and is independent of magnetic field, provided it exceeds 2.5 kG.

Laser diffraction of brittle polymer under tension

C. C. Hsiao

Appl. Phys. Lett. 23, 20 (1973); http://dx.doi.org/10.1063/1.1654721 (2 pages) | Cited 1 time

Online Publication Date: 9 October 2003

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Laser diffraction technique has revealed interesting and useful information when crazing and cracking occur in a stressed polymer. Based on preliminary results, their distribution and geometry may be determined quantitatively.

Excitation of vacuum ultraviolet emission from high‐pressure xenon by relativistic electron beams

Stephen C. Wallace, R. T. Hodgson, and R. W. Dreyfus

Appl. Phys. Lett. 23, 22 (1973); http://dx.doi.org/10.1063/1.1654722 (3 pages) | Cited 8 times

Online Publication Date: 9 October 2003

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This letter reports an investigation of the vacuum ultraviolet emission from gaseous xenon excited with a 4‐nsec 10‐kA cm−2 electron beam. The observed decrease in the emission lifetime at 171.5 nm for high xenon number density is due to a quenching process intrinsic to xenon. Treatment of the quenching data yields a radiative lifetime of 130 ± 20 nsec for the excited xenon diatomic, and a quenching constant of 5.1 × 10−13 cm3 atom−1 sec−1. Thus, the theoretical threshold for laser action in excited diatomic xenon molecules is ∼ 26 times higher than had been previously anticipated from the 5‐nsec lifetime observed in liquid xenon.

High‐power narrow‐linewidth operation of GaAs diode lasers

J. A. Rossi, S. R. Chinn, and H. Heckscher

Appl. Phys. Lett. 23, 25 (1973); http://dx.doi.org/10.1063/1.1654723 (3 pages) | Cited 22 times

Online Publication Date: 9 October 2003

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By utilizing a dispersive element in an external cavity, we find it possible for pulsed room‐temperature GaAs diodes to emit high output power (3 W) into a narrow linewidth (0.4 Å). This narrow‐band output is continuously tunable over an ∼ 100‐Å range with only a moderate variation in output power. Significantly, these qualities are preserved even at high output power densities (3 × 106 W∕cm2).

Conditions for laser oscillations in distributed‐feedback waveguides

R. E. DeWames and W. F. Hall

Appl. Phys. Lett. 23, 28 (1973); http://dx.doi.org/10.1063/1.1654724 (3 pages) | Cited 6 times

Online Publication Date: 9 October 2003

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An analysis of laser action in a waveguide configuration with a bulk periodic complex index variation or a corrugated surface structure is presented. Simple analytical expressions are obtained for the effective gain parameter per unit length and the coupling constant which measures the degree of feedback. Our results are compared with the recent work of Kogelnik and Shank as well as that of Wang.

Deep trap levels of ion‐implanted germanium in silicon measured by Schottky contact techniques

M. Schulz

Appl. Phys. Lett. 23, 31 (1973); http://dx.doi.org/10.1063/1.1654725 (3 pages) | Cited 12 times

Online Publication Date: 9 October 2003

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Differential capacitance measurements on Schottky contacts can be used to determine energy level, charge, and concentration profile of ion‐implanted impurities which cause deep trap levels in the semiconducting material. For the example of germanium implanted into silicon, two deep donor levels at Ec − E1 = 0.27 eV and E2Ev = 0.51 eV are found which are due to an unstable incorporation of the implanted germanium in the silicon lattice. For the stable incorporation which is obtained at high annealing temperatures, no isoelectronic levels are found for germanium on lattice sites in silicon.

Time‐dependent breakdown of silicon dioxide films

S. I. Raider

Appl. Phys. Lett. 23, 34 (1973); http://dx.doi.org/10.1063/1.1654726 (3 pages) | Cited 19 times

Online Publication Date: 9 October 2003

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Na ion drift through intentionally contaminated SiO2 films is observed at room temperature when voltages of the appropriate polarity are applied across the oxide. Enhanced electronic conduction and time‐dependent breakdowns of Al∕SiO2∕Si capacitors electrically stressed at constant field strengths were correlated with this Na ion drift. The applied field strengths, E, and times, t, to breakdown of contaminated capacitors were found to be linearly related by Peek's law, in which Et−1∕4.

Holography of large objects in a turbulent atmosphere with a cw laser

D. A. Cain, C. Billings, C. D. Johnson, and G. M. Mayer

Appl. Phys. Lett. 23, 37 (1973); http://dx.doi.org/10.1063/1.1654727 (2 pages)

Online Publication Date: 9 October 2003

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Results of tests of long‐range large‐object holography in a turbulent atmosphere are presented. Photographs of holograms of static and vibrating objects as large as 12 × 28 ft and at distances up to 160 ft are shown. The light source for these holograms was an argon‐ion cw laser. The medium was air with 5‐ to 10‐mph winds over an irregular surface.

Momentum transfer to laser‐irradiated targets, indicating the nonlinear interaction force

Heinrich Hora

Appl. Phys. Lett. 23, 39 (1973); http://dx.doi.org/10.1063/1.1654728 (2 pages) | Cited 6 times

Online Publication Date: 9 October 2003

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See Also: Erratum

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Measurements by Metz of the momentum ρ transferred to laser‐irradiated targets are evaluated and compared with the results of the nonlinear force of laser‐plasma interaction. The measured thresholds for the intensity I*, estimated to be 2 × 1014 W∕cm2, agree with the threshold of the nonlinear force. The measured highly superlinear relation PI4 agrees very well with the theory for not too large intensities II*. A consequence would be an electron energy of coherent oscillation near 104 eV, which may cause a nonthermal origin of fusion neutrons in other experiments.

An explanation for the Bekefi peaks in the low‐field microwave emission from InSb

H. H. J. M. Niederer and R. G. van Welzenis

Appl. Phys. Lett. 23, 41 (1973); http://dx.doi.org/10.1063/1.1654730 (2 pages) | Cited 2 times

Online Publication Date: 9 October 2003

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The peaks in the microwave emission intensity from InSb, at 4.2 K, observed at distinct values of the applied magnetic field as reported by Bekefi et al., are explained in terms of magnetophonon resonances in the acoustoelectric amplification.

Thermal blooming of pulsed laser radiation

H. Kleiman and R. W. O'Neil

Appl. Phys. Lett. 23, 43 (1973); http://dx.doi.org/10.1063/1.1654731 (2 pages) | Cited 9 times

Online Publication Date: 9 October 2003

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We have observed thermal blooming of focused 1.06‐μ pulsed laser radiation propagating in a weakly absorbing medium. Laser pulse lengths of 3–100 μsec were used to span the hydrodynamic time, which is defined as the pressure disturbance transit time across the laser beam. One‐dimensional eikonal models of laser propagation in the limits of pulse duration less than the hydrodynamic time and pulse duration greater than the hydrodynamic time agree well with the experimental results.

Spectral losses of unclad fibers made from high‐grade vitreous silica

P. Kaiser

Appl. Phys. Lett. 23, 45 (1973); http://dx.doi.org/10.1063/1.1654732 (2 pages) | Cited 11 times

Online Publication Date: 9 October 2003

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Spectral loss measurements performed between 0.5 and 1.15 μm with up to 32‐m‐long unclad fibers drawn from Suprasil W1, Spectrosil WF, and Corning 7943 synthetic vitreous silica demonstrated that bulk glasses with total losses well below 10 dB∕km at certain wavelengths of interest for future optical communication systems are already commercially available. Lowest losses of 4 dB∕km at 0.90 μm and 2.5 dB∕km at 1.06 μm were obtained with one of the samples evaluated.

Tunable far‐infrared generation by difference frequency mixing of dye lasers in reduced (black) lithium niobate

D. H. Auston, A. M. Glass, and P. LeFur

Appl. Phys. Lett. 23, 47 (1973); http://dx.doi.org/10.1063/1.1654733 (2 pages) | Cited 18 times

Online Publication Date: 9 October 2003

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Continuously tunable far‐infrared radiation from 2 to 50 cm−1 has been generated in lithium niobate which was reduced in a H2, N2 atmosphere to render it highly absorbing. The efficiency of far‐infrared generation by optical excitation of absorbing defects compares favorably with generation by the electro‐optic effect in clear LiNbO3. Output powers of a few milliwatts were obtained without phase matching.

Acceptor profiles obtained by diffusive redistribution of implanted impurities during annealing

James F. Gibbons

Appl. Phys. Lett. 23, 49 (1973); http://dx.doi.org/10.1063/1.1654734 (3 pages) | Cited 6 times

Online Publication Date: 9 October 2003

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Damage‐enhanced diffusion and annealing is examined as a means for producing the observed redistribution of boron that is implanted into Si at 77 °K and then annealed at 650 °C. A model incorporating spatial variation of both the diffusion coefficient and the final electrical activity is found to fit the experimental data with reasonable accuracy.
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