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15 Jul 1973

Volume 23, Issue 2, pp. 53-113

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Bulk acoustic wave interaction with guided optical waves

G. B. Brandt, M. Gottlieb, and J. J. Conroy

Appl. Phys. Lett. 23, 53 (1973); http://dx.doi.org/10.1063/1.1654803 (2 pages) | Cited 3 times

Online Publication Date: 9 October 2003

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An interaction between longitudinal or shear bulk acoustic waves and guided optical waves has been observed in single‐mode and multimode polyurethane and sputtered glass optical waveguides. This interaction produces a number of effects — namely, mode conversion, amplitude modulation, and phase modulation — depending upon whether shear or longitudinal sound is present. Mode conversion between TE and TM waveguide modes occurs with shear sound; longitudinal sound produces amplitude and phase modulation of the guided light. The bulk acoustic wave effect offers promise for producing high‐data‐rate integrated optical modulators.

Acoustic surface wave properties of epitaxially grown aluminum nitride and gallium nitride on sapphire

G. D. O'Clock and M. T. Duffy

Appl. Phys. Lett. 23, 55 (1973); http://dx.doi.org/10.1063/1.1654804 (2 pages) | Cited 57 times

Online Publication Date: 9 October 2003

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Experimental results are reported on the coupling of rf energy and acoustic surface waves in aluminum nitride (AlN) on sapphire and gallium nitride (GaN) on sapphire material systems. Metallized interdigital transducers are deposited on the AlN and GaN surfaces to generate and detect the acoustic surface wave energy.

Reflective‐mode ferroelectric‐photoconductor image storage and display devices

C. E. Land and W. D. Smith

Appl. Phys. Lett. 23, 57 (1973); http://dx.doi.org/10.1063/1.1654805 (3 pages) | Cited 30 times

Online Publication Date: 9 October 2003

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A new type of image storage and display device, called the Fericon, is described in which the image is stored by means of electrically induced surface deformation in ferroelectric ceramics. The preferred method of viewing or projecting the stored image is by reflected light using Schlieren optics. The device has nonvolatile storage and the capability of selective erasure of the stored image.

Valence band density of states and core level shifts of AgGaS2 as determined by x‐ray photoemission

M. J. Luciano and C. J. Vesely

Appl. Phys. Lett. 23, 60 (1973); http://dx.doi.org/10.1063/1.1654806 (2 pages) | Cited 18 times

Online Publication Date: 9 October 2003

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The first measurements of x‐ray‐induced electron emission for AgGaS2, a I‐III‐VI2 chalcopyrite compound, are reported. The measurements include both the valence band density of states and electronic core levels. The Ag 4d levels were found to be quite narrow and located 3.4 eV below the top of the valence band partially overlapping the heavy‐hole p‐like bands which have a maximum at 1.1 eV. The s‐like band was observed at 11.7 eV.

Anomalous structure in appearance potential spectra

K. N. Ramachandran and C. D. Cox

Appl. Phys. Lett. 23, 62 (1973); http://dx.doi.org/10.1063/1.1654807 (2 pages) | Cited 1 time

Online Publication Date: 9 October 2003

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A number of anomalous peaks were found in the low‐energy end of the appearance potential spectrum obtained from a high‐purity iron foil. The structure changed considerably when the foil was contaminated from an oxide‐coated filament. These peaks do not correspond to any known absorption edge of the specimen.

New electrochromic memory display

C. J. Schoot, J. J. Ponjee, H. T. van Dam, R. A. van Doorn, and P. T. Bolwijn

Appl. Phys. Lett. 23, 64 (1973); http://dx.doi.org/10.1063/1.1654808 (2 pages) | Cited 63 times

Online Publication Date: 9 October 2003

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The principle of a new electrochromic display based on an oxidation‐reduction reaction of an organic compound of the viologen family is described. The result is a display having a built‐in memory, high contrast, a low switching voltage, and a low mean power consumption.

Deep‐etched silicon diode array target

D. K. Schroder, R. A. Wickstrom, and P. Rai‐Choudhury

Appl. Phys. Lett. 23, 66 (1973); http://dx.doi.org/10.1063/1.1654809 (2 pages) | Cited 2 times

Online Publication Date: 9 October 2003

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A silicon diode array target is described in which heavily p+‐doped silicon epitaxial contacts are grown on pedestals, formed by selective etching of the n‐type silicon substrate. It offers the advantage that the top of the p+ contacts can be raised significantly higher above the oxide than is possible with other target structures. Experimentally, such targets have shown an excellent modulation transfer function (MTF), low lag, good dark‐current behavior, and compatibility with tube and photocathode fabrication techniques.

Lasing from the upper vibrational levels of a flash‐initiated H2☒F2 laser

S. N. Suchard

Appl. Phys. Lett. 23, 68 (1973); http://dx.doi.org/10.1063/1.1654810 (3 pages) | Cited 9 times

Online Publication Date: 9 October 2003

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Laser action has been observed from the P‐branch vibration‐rotation bands of the HF molecule from v = 6→5 to v = 1→0 transitions. In addition, the time‐resolved spectral behavior of this He‐diluted H2☒F2 chain reaction chemical laser has been recorded. The HF* lasing molecules were produced by the reaction of a 50‐Torr gaseous mixture with mole ratio H2∕F2∕He=0.5∕1∕40 initiated by flash photolysis. In contrast to earlier results, strong lasing was found on the v = 6→5 and 5→4 transitions of the HF molecule. Within some of the bands from which lasing was observed, the time sequencing of transitions suggests non‐Boltzmann distributions of the rotational states.

Field and time thresholds for the electrical fixation of holograms recorded in (Sr0.75Ba0.25)Nb2O6 crystals

F. Micheron and G. Bismuth

Appl. Phys. Lett. 23, 71 (1973); http://dx.doi.org/10.1063/1.1654811 (2 pages) | Cited 38 times

Online Publication Date: 9 October 2003

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We demonstrate that the electrical fixation of holograms recorded in (Sr0.75Ba0.25)Nb2O6 involves local polarization switching; the fixing threshold is found to be nearly the average coercive field Ec = 970 V∕cm, and the minimum fixing time is the polarization switching time. The diffraction efficiency enhancement of fixed holograms is attributed to the photoinduced space charge field's overcancellation by ionic displacements associated with the polarization switching.

Thin‐film calorimeter for low‐energy laser pulse measurements

G. Koren, Y. Yacoby, H. Lotem, M. Kosower, and G. Greenwald

Appl. Phys. Lett. 23, 73 (1973); http://dx.doi.org/10.1063/1.1654812 (2 pages) | Cited 2 times

Online Publication Date: 9 October 2003

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A laser pulse calorimeter which enables measurements of energies within the region of 20–0.02 mJ is described. The calorimeter is a temperature‐sensitive resistor, composed of a thin film of black V2O5 evaporated on an 8‐μ sapphire substrate of 1‐cm diameter. The characteristic peak reading pulse responsivity is 1 mV∕mJ, and the accuracy of the measurements at 0.1 mJ is approximately 7%. The calorimeter is sensitive primarily to the beams' energy, and its response is independent of the shape and size of the incident beam of a given energy.

Fast acousto‐optical waveguide modulators

Manhar L. Shah

Appl. Phys. Lett. 23, 75 (1973); http://dx.doi.org/10.1063/1.1654813 (3 pages) | Cited 2 times

Online Publication Date: 9 October 2003

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Acousto‐optic thin‐film optical waveguide modulators having the potential of operating in the GHz frequency range with a large bandwidth are described. An experimental modulator using a shear wave propagating normal to the film was operated up to 225 MHz and produced intensity‐modulated light at twice that frequency. Unlike magneto‐optic, electro‐optic, and induced absorption‐type modulators, the scheme presented here may not require special material or hybrid structure for the waveguide; therefore, it would be easy to incorporate into integrated optics.

Focusing properties of thin‐film lenslike light guide for integrated optics

Y. Suematsu, K. Furuya, and T. Kambayashi

Appl. Phys. Lett. 23, 78 (1973); http://dx.doi.org/10.1063/1.1654814 (2 pages) | Cited 5 times

Online Publication Date: 9 October 2003

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A thin‐film lenslike light guide was made by rf sputtering of one glass film on another glass substrate. The one‐dimensional focusing properties which depend upon the propagating mode are to be demonstrated. A basic theoretical treatment is given which shows that the focusing power increases with the mode number. The focusing parameters were determined experimentally. The over‐all experimental results were in good agreement with the theoretical predictions.

Aerodynamically mixed electric discharge CO2 laser

Hiromichi Shirahata and Akira Fujisawa

Appl. Phys. Lett. 23, 80 (1973); http://dx.doi.org/10.1063/1.1654815 (2 pages) | Cited 2 times

Online Publication Date: 9 October 2003

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An aerodynamically mixed electric discharge coaxial‐type CO2 laser was investigated experimentally. Homogeneous and stable discharge was attained in the transonic gas flow region, and a small‐signal gain of 11.5 dB∕m and a saturation parameter of 2000 ± 150 W∕cm2 were obtained.

N2O pure chemical cw flame laser

D. J. Benard, R. C. Benson, and R. E. Walker

Appl. Phys. Lett. 23, 82 (1973); http://dx.doi.org/10.1063/1.1654816 (3 pages) | Cited 11 times

Online Publication Date: 9 October 2003

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We report the first observation of laser amplification and oscillation in a continuously operating flame with N2O as the optically active species. Outputs have been observed at five wavelengths in the 001–100 vibrational‐rotational band of N2O when excited by the Na‐catalyzed combustion of N2O with CO in a coaxial flow laser cavity. At the equivalent wavelengths in CO2 neither significant gain nor absorption was observed although CO2 is formed as a reaction product. The performance of the N2O chemically driven laser is compared to that of an electrical discharge flow laser, where N2O is mixed with vibrationally excited N2 in the same laser cavity and flow system. It was found that a large fraction of the chemical heat release is available for N2O laser pumping.

Fresnel diffraction effects in the design of high‐power laser systems

A. J. Campillo, J. E. Pearson, S. L. Shapiro, and N. J. Terrell

Appl. Phys. Lett. 23, 85 (1973); http://dx.doi.org/10.1063/1.1654817 (3 pages) | Cited 19 times

Online Publication Date: 9 October 2003

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Fresnel diffraction by circular apertures for beams commonly encountered in high‐power laser systems is investigated. Striking agreement is demonstrated between experimental results and theoretical calculations for beams with uniform and Gaussian intensity profiles. It is pointed out that Fresnel diffraction patterns produced by circular apertures depend only on the incident wave front and the Fresnel number corrected for curvature of the incident beam, F = a2∕λL + a2∕λR. This also gives an excellent experimental method for measuring divergence. Methods are discussed for minimizing the occurrence of severe intensity variations and resulting self‐focusing problems in high‐power laser amplifiers.

Buildup of picosecond pulse generation in passively mode‐locked rhodamine dye lasers

E. G. Arthurs, D. J. Bradley, and A. G. Roddie

Appl. Phys. Lett. 23, 88 (1973); http://dx.doi.org/10.1063/1.1654818 (2 pages) | Cited 12 times

Online Publication Date: 9 October 2003

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The buildup of picosecond pulses in a passively mode‐locked rhodamine 6G dye laser has been directly studied with a picosecond streak camera. It is shown how a single isolated picosecond pulse evolves from the initial intensity fluctuations.

Face‐pumped high‐average‐power low‐distortion dye laser

R. L. St. Peters and D. J. Taylor

Appl. Phys. Lett. 23, 90 (1973); http://dx.doi.org/10.1063/1.1654819 (2 pages) | Cited 2 times

Online Publication Date: 9 October 2003

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We have applied face‐pumping techniques to reduce thermal distortion and thereby improve the high‐average‐power capability of flashlamp‐pumped dye lasers. With our zigzag configuration, no distortion could be observed at an average input power of 1 kW. At 1.8 kW input (600 J at 3 pps) we obtained over 1 W output (nearly 0.06% efficiency) from Rhodamine 6G with no beam distortion. Proportionally higher output power is expected at higher repetition rates, and higher efficiency is expected from future versions of this laser with smaller apertures than the present 9 cm2.

Copper superradiant emission from pulsed discharges in copper iodide vapor

C. S. Liu, E. W. Sucov, and L. A. Weaver

Appl. Phys. Lett. 23, 92 (1973); http://dx.doi.org/10.1063/1.1654820 (2 pages) | Cited 15 times

Online Publication Date: 9 October 2003

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Superradiant copper laser emission at 5106 and 5782 Å is reported from pulsed discharges in copper iodide vapor at temperatures of about 600°C. Dissociation of the iodide, excitation of the copper atom, and resonance trapping of the 3248 Å copper transitions are proposed as the principal inversion mechanisms.

Effect of saturable absorption on the behavior of spontaneous emission in semiconductor lasers

P. Brosson, N. Patel, and J. E. Ripper

Appl. Phys. Lett. 23, 94 (1973); http://dx.doi.org/10.1063/1.1654821 (2 pages) | Cited 8 times

Online Publication Date: 9 October 2003

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A substantial reduction of the spontaneous emission intensity is observed at the onset of stimulated emission in some injection lasers. It is shown that this effect is caused by the saturation of optically absorbing traps present in the active region. It is suggested that saturable optical absorption is also responsible for previously unexplained similar reduction observed by Nicoll in bulk semiconductor lasers.

Laser emission at 3 μ from Dy3+ in BaY2F8

L. F. Johnson and H. J. Guggenheim

Appl. Phys. Lett. 23, 96 (1973); http://dx.doi.org/10.1063/1.1654822 (3 pages) | Cited 45 times

Online Publication Date: 9 October 2003

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A unique combination of properties in the host crystal BaY2F8 has made it possible to obtain laser emission from the Dy3+ ion at 3.022 μ. The laser line lies close to the electronic transition from the lowest level of the 6H13∕2 excited state at 3520 cm−1 to a ground manifold level at 216 cm−1, but the oscillation frequency is shifted by 5 cm−1 due to overlapping vibronic lines. The intensity of Dy3+ emission is enhanced by energy transfer from Er3+, Yb3+, Tm3+, and Ho3+. The restrictions imposed on the multiphonon decay rates for the operation of a Dy3+ laser at 3 μ are discussed. A comparison of radiative and nonradiative relaxation rates for rare‐earth ions in BaY2F8 indicates that an extension of laser emission to beyond 4 μ is unlikely.

Characteristics of aluminum‐titanium electrical contacts on silicon

Robert W. Bower

Appl. Phys. Lett. 23, 99 (1973); http://dx.doi.org/10.1063/1.1654823 (3 pages) | Cited 55 times

Online Publication Date: 9 October 2003

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An aluminum‐titanium metallization scheme for use in silicon integrated circuits is described. This metallization can produce high‐conductance electrical contacts with negligible dissolutions of silicon. The desirable contact is lost, however, if a TiAl3 reaction product is allowed to consume the entire Ti layer. The TiAl3 forms during the postmetallization heat treatment used to stabilize the electrical characteristics of the contact. The Ti layer is found to be consumed in this reaction at a rate proportional to t1∕2, where the rate constant is determined to be d=d0 exp(−Ea∕kT), where d0 ≈ 0.15 cm2∕sec and Ea ≈ 1.85 eV. This rate constant can be used to determine the thickness of titanium layer necessary to produce the desirable electrical contact.

Electron‐beam‐pumped semiconductor laser using a gas plasma gun (GPG)

J. T. Verdeyen, W. L. Johnson, B. E. Cherrington, N. Holonyak, J. C. Campbell, M. H. Lee, and M. G. Craford

Appl. Phys. Lett. 23, 102 (1973); http://dx.doi.org/10.1063/1.1654798 (2 pages) | Cited 1 time

Online Publication Date: 9 October 2003

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A simple gaseous plasma electron beam source for electron‐bombardment excitation of semiconductor lasers is described. The gas plasma gun (GPG) is capable of electron beam energies (> 50 keV) and current densities (adjustable with magnetic field) sufficient to produce laser operation of homogeneous semiconductor samples, as is demonstrated on GaAs1−xPx (x = 0.37, 77°K).

Direct infrared image up‐conversion with a praseodymium chloride quantum counter

Kenneth G. Sewell and William B. Volz

Appl. Phys. Lett. 23, 104 (1973); http://dx.doi.org/10.1063/1.1654799 (3 pages) | Cited 4 times

Online Publication Date: 9 October 2003

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Infrared images at 1.48, 1.59, 2.05, 2.38, and 4.81 μm have been successfully up‐converted to 645.2 nm by using a PrCl3 quantum counter. Maximum up‐converted resolution is 2.92 line pairs∕mm, equal to that of the projected image, for an optical pump intensity of 2 mW∕cm2 on a 0.63‐cm format. A quantum efficiency of 4.6 × 10−6 has been measured for a device temperature of 163 °K and an optical pump intensity of 8 mW∕cm2. The variation in 645.2‐nm fluorescence with temperature is explained in terms of a depopulation mechanism involving thermal excitation to levels higher than 3P0.

Generation of tunable far‐infrared radiation by difference frequency mixing using conduction electron spin nonlinearity in InSb

T. J. Bridges and Van Tran Nguyen

Appl. Phys. Lett. 23, 107 (1973); http://dx.doi.org/10.1063/1.1654800 (3 pages) | Cited 13 times

Online Publication Date: 9 October 2003

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Far‐infrared radiation tunable between 93 and 100 cm−1 has been produced by difference frequency mixing between the 944.2‐cm−1 pump and the tunable frequency‐shifted Stokes radiation from an InSb spin flip Raman (SFR) laser. Mixing occurs in a separate crystal of InSb using the strong nonlinearity of the electron spins. Since operation of both SFR laser and mixer require the same geometry and magnetic field, they are mounted together in the superconducting magnet.

Operation of a cold‐cathode electron‐beam‐controlled CO2 laser oscillator at 1–3 atm

Charles Cason, George J. Dezenberg, and Robert J. Huff

Appl. Phys. Lett. 23, 110 (1973); http://dx.doi.org/10.1063/1.1654801 (2 pages) | Cited 11 times

Online Publication Date: 9 October 2003

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A cold‐cathode electron gun was used to control an 8‐liter CO2 laser oscillator, operated at pressures varied from 1 to 3 atm. The output energy density scaled linearly with pressure and increased with an increase in the applied drift fields up to 5 kV cm−1 atm−1. The output energy at 2 atm was 1 kJ.
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