APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

15 Aug 1973

Volume 23, Issue 4, pp. 171-208


Transmission of stationary nonlinear optical pulses in dispersive dielectric fibers. II. Normal dispersion

Akira Hasegawa and Frederick Tappert

Appl. Phys. Lett. 23, 171 (1973); http://dx.doi.org/10.1063/1.1654847 (2 pages) | Cited 265 times

Online Publication Date: 9 October 2003

Full Text: | Download PDF

Show Abstract
Theoretical calculations supported by numerical simulations show that utilization of the nonlinear dependence of the index of refraction on intensity makes possible the transmission of picosecond optical pulses without distortion in dielectric fiber waveguides with group velocity dispersion. In the case of normal dispersion (∂2ω∕∂k2 < 0) discussed here [the case of anomalous dispersion (∂2ω∕∂k2 > 0) was discussed in an earlier letter], the stationary pulse is a ``dark'' pulse or envelope shock. Numerical simulations show that such pulses are stable under the influence of small perturbations, white noise, or absorption. Important considerations relating to the practical applications of both ``bright'' and ``dark'' pulses are also discussed.

Efficient infrared‐to‐visible conversion in BaY2F8 : Yb,Er crystal by confinement of excitation energy

Yoh Mita, Eiji Nagasawa, Ken‐ichi Shiroki, Yasuo Ohno, and Tetsujin Matsubara

Appl. Phys. Lett. 23, 173 (1973); http://dx.doi.org/10.1063/1.1654848 (3 pages) | Cited 5 times

Online Publication Date: 9 October 2003

Full Text: | Download PDF

Show Abstract
Efficient up‐conversion of near‐infrared energy was realized by confinement of infrared energy in an optical cavity containing a BaY2F8 : Yb,Er single crystal. The lifetime of the ytterbium excited state showed a marked increase and, in a typical instance, became as long as 3.6 msec. Combined with 8% efficiency GaAs : Si diode, an over‐all conversion efficiency of nearly 0.04% was obtained for a 50‐mA diode‐exciting current.

Fast electro‐optic waveguide deflector modulator

J. M. Hammer, D. J. Channin, and M. T. Duffy

Appl. Phys. Lett. 23, 176 (1973); http://dx.doi.org/10.1063/1.1654849 (2 pages) | Cited 25 times

Online Publication Date: 9 October 2003

Full Text: | Download PDF

Show Abstract
We describe a high‐speed deflector‐modulator based on an electro‐optically induced thick phase grating in optical waveguides of single‐crystal epitaxial ZnO film on Al2O3 substrates. 40% of the beam is diffracted into first order with response times of 3 nsec. The extinction ratio in the deflected beam is greater than 95%. We predict 80% diffraction, response times of < 1 nsec, and power requirements of approximately 1 mW∕MHz for an optimized geometry.

Optical nonlinearities in conjugated systems: β‐carotene

J. P. Hermann, D. Ricard, and J. Ducuing

Appl. Phys. Lett. 23, 178 (1973); http://dx.doi.org/10.1063/1.1654850 (3 pages) | Cited 83 times

Online Publication Date: 9 October 2003

Full Text: | Download PDF

Show Abstract
Quantitative studies of third‐harmonic generation in the all‐trans β‐carotene molecule and of third‐harmonic generation and the optical Kerr effect in β‐carotene glass are reported. The large values of the optical nonlinearities are attributed to the broadly delocalized Π electrons.

Continuous operation of GaAs☒Ga1 − xAlxAs double‐heterostructure lasers with 30 °C half‐lives exceeding 1000 h

R. L. Hartman, J. C. Dyment, C. J. Hwang, and M. Kuhn

Appl. Phys. Lett. 23, 181 (1973); http://dx.doi.org/10.1063/1.1654851 (3 pages) | Cited 29 times

Online Publication Date: 9 October 2003

Full Text: | Download PDF


See Also: Erratum

Show Abstract
This paper reports the first continuous operation of GaAs☒Ga1 − xAlxAs double‐heterostructure (DH) junction lasers for periods of time in excess of 1000 h in a 30 °C ambient. One laser which has operated at a constant direct current for more than 1000 h has degraded only 10% from its initial 20‐mW light output. At 1000 h, the differential quantum efficiency remained essentially unchanged, but the threshold and the mode structure changed appreciably.

Charge storage characteristics of MIS structures employing dual‐insulator composites of HfO2☒SiO2 and SrTiO3☒SiO2

A. J. Shuskus, D. J. Quinn, and D. E. Cullen

Appl. Phys. Lett. 23, 184 (1973); http://dx.doi.org/10.1063/1.1654852 (2 pages) | Cited 5 times

Online Publication Date: 9 October 2003

Full Text: | Download PDF

Show Abstract
Two MIS versions have been fabricated employing rf‐sputtered dual insulator structures comprised of 1000 Å HfO2‐20 Å SiO2 and 1000 Å SrTiO3‐20 Å SiO2. The high‐dielectric‐constant insulators in combination with a 20‐Å layer of silicon dioxide permit the transfer of charge by tunneling into traps at the dual‐insulator interface to occur at considerably lower voltages than comparable structures employing silicon nitride or aluminum oxide. It was found that trap density and, hence, the degree of flat‐band voltage shift could be altered by sputtering 50‐Å layers of selected materials at the insulator‐SiO2 interface. The devices employing hafnium dioxide show promise in an application as a nonvolatile electrically alterable memory element. Although the strontium titanate devices exhibit a low threshold voltage for onset of charge transfer, the charge retention characteristics are poor.

Properties of chalcogenide glass‐silicon heterojunctions

D. K. Reinhard, F. O. Arntz, and D. Adler

Appl. Phys. Lett. 23, 186 (1973); http://dx.doi.org/10.1063/1.1654853 (3 pages) | Cited 13 times

Online Publication Date: 9 October 2003

Full Text: | Download PDF

Show Abstract
The properties of heterojunctions between n‐ and p‐type crystalline silicon and certain threshold‐type amorphous chalcogenide films have been investigated. Low‐field and high‐field I‐V characteristics, switching properties, and photoelectric behavior have all been studied. Devices fabricated with silicon substrates of opposite types are distinctly different; device characteristics at low voltages were found to be influenced appreciably by interface states. Short‐circuit photocurrent data imply band models which explain the I‐V properties in both the absence and the presence of light.

Use of Mg diffusion in p‐type Si to measure the residual P concentration by infrared absorption

B. Pajot, G. Taravella, and J. P. Bouchaud

Appl. Phys. Lett. 23, 189 (1973); http://dx.doi.org/10.1063/1.1654854 (3 pages) | Cited 3 times

Online Publication Date: 9 October 2003

Full Text: | Download PDF

Show Abstract
Two possibilities for observing the infrared absorption of residual phosphorus in p‐type silicon are discussed. Experimental results show that in p‐type silicon the pairing of Mg, presumably with boron and∕or oxygen, produces donor complexes with ionization energy less than that of phosphorus. The integrated intensity of the phosphorus lines of the sample after Mg diffusion indicates a phosphorus concentration of ∼ 1.5 × 1013 atoms∕cm3.

Degradation characteristics of cw optically pumped AlxGa1−xAs heterostructure lasers

W. D. Johnston and B. I. Miller

Appl. Phys. Lett. 23, 192 (1973); http://dx.doi.org/10.1063/1.1654855 (3 pages) | Cited 38 times

Online Publication Date: 9 October 2003

Full Text: | Download PDF

Show Abstract
The characteristic formation of dark filamentary features during the rapid degradation mode of AlxGa1−xAs double‐heterostructure lasers has been observed in material with no contacts, with or without a p‐n junction, and in minimal‐strain mounting configurations. The degradation was observed in optically pumped cw lasing and nonlasing conditions with active region temperatures near and above room temperature.

Single‐line operation of a 2‐W longitudinal cw CO chemical laser with no frequency‐selective element in the optical cavity

Y. Hirose, Y. Nachshon, T. A. DeTemple, and P. D. Coleman

Appl. Phys. Lett. 23, 195 (1973); http://dx.doi.org/10.1063/1.1654856 (3 pages) | Cited 2 times

Online Publication Date: 9 October 2003

Full Text: | Download PDF

Show Abstract
An experimental condition has been found for the CO chemical laser where it would appear that vibration‐vibration relaxation processes (V‐V) compete with stimulated emission to force the laser to operate in essentially a single line ν = 10–9, P(17). No frequency‐selective element has been used in the laser cavity. Experimental data and results of computations on a laser model are presented to support this suggestion. A cw power of 7 W has also been achieved in this longitudinal flow system with the addition of cold CO (300 °K) for the chemical efficiency of ∼ 3.2%, one of the highest values for any system reported at the present time.

Growth of LiNbO3 single‐crystal film for optical waveguides

Shintaro Miyazawa

Appl. Phys. Lett. 23, 198 (1973); http://dx.doi.org/10.1063/1.1654857 (3 pages) | Cited 58 times

Online Publication Date: 9 October 2003

Full Text: | Download PDF

Show Abstract
Ferroelectric LiNbO3 single‐crystal film was successfully grown onto a LiTaO3 substrate by a new method, epitaxial‐growth‐by‐melting (EGM) method. The propagation of a He☒Ne laser beam fed into the film was demonstrated. Some preliminary results of this new technique for fabricating optical waveguides are reported.

Molecular beam epitaxy of alternating metal‐semiconductor films

R. Ludeke, L. L. Chang, and L. Esaki

Appl. Phys. Lett. 23, 201 (1973); http://dx.doi.org/10.1063/1.1654858 (3 pages) | Cited 38 times

Online Publication Date: 9 October 2003

Full Text: | Download PDF

Show Abstract
Epitaxial growth of alternating thin films of GaAs and Al was achieved on GaAs substrates of various orientations. In situ high‐energy electron diffraction (HEED) analysis was used to monitor the molecular beam growth process. The following crystallographic relationship was observed: (100) GaAs on (110) Al on (100) GaAs substrates, with [110] GaAs parallel to [100] Al. An atomic interface model is proposed to explain the observed growth.

Lifetime characterization of propagated bubble‐data streams

P. W. Shumate and R. J. Peirce

Appl. Phys. Lett. 23, 204 (1973); http://dx.doi.org/10.1063/1.1654859 (2 pages) | Cited 9 times

Online Publication Date: 9 October 2003

Full Text: | Download PDF

Show Abstract
A ``mean‐time‐to‐failure'' measurement has been made on propagated magnetic bubble domain patterns. A Permalloy T‐bar field‐accessed circuit was used with two compositions of epitaxially grown magnetic garnet films. As the number of steps of propagation at 100 kHz increases, the bias field margins at constant drive field for error‐free propagation are observed to decrease. A reasonable extrapolation of the data taken on a specific circuit‐material combination operated near the center of the bias range at 100 kHz suggests that an error rate as low as 10−20 per step is attainable. The effects of the circuit‐to‐garnet spacing and drive field magnitude are discussed, as well as the effects of ion implantation and crystal annealing.

Laser‐induced anisotropic thermoelectric voltages in thin films

R. J. von Gutfeld

Appl. Phys. Lett. 23, 206 (1973); http://dx.doi.org/10.1063/1.1654860 (3 pages) | Cited 20 times

Online Publication Date: 9 October 2003

Full Text: | Download PDF

Show Abstract
Transverse thermoelectric voltages have been observed to occur when thin Mo and W films are excited by pulsed laser light at normal incidence to the film. Wavelengths in the range 0.46–1.06 μm and pulse widths of ∼ 3–300 nsec were used. A maximum thermoelectric voltage of ∼50 mV occurring across a load resistance of 50 Ω for an ∼ 1‐kW incident laser pulse has been observed. A correlation between intrinsic film stress and output voltage suggests that the stress gives rise to a nonscalar absolute thermoelectric power (Seebeck coefficients) even though the transport properties of these bulk materials are isotropic.
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close