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Issue 12 | 15 Dec | pp. 651-705

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Select this Article		Stability of liquid charged electrets P. W. Chudleigh, R. E. Collins, and G. D. Hancock Appl. Phys. Lett. 23, 211 (1973); http://dx.doi.org/10.1063/1.1654861 (2 pages) \| Cited 13 times Online Publication Date: 9 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract Stability measurements on liquid charged Teflon FEP electrets are reported. The initial decay is nonexponential and strongly dependent on experimental conditions, while the long‐term decay is dependent on foil material and temperature. However, in all cases, there appears to be a single rate‐limiting process with a measured activation energy equal to 1.9 ± 0.1 eV.

Select this Article		Single‐crystal growth and piezoelectric properties of lead potassium niobate Tomoaki Yamada Appl. Phys. Lett. 23, 213 (1973); http://dx.doi.org/10.1063/1.1654862 (2 pages) \| Cited 14 times Online Publication Date: 9 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract Large single crystals of lead potassium niobate were grown by the method of pulling from a melt, and their piezoelectric properties were preliminarily investigated. The crystals have ferroelectric tungsten bronze structure with a Curie point of about 460°C. Spontaneous polarization lies perpendicular to the c axis as in ferroelectric PbNb₂O₆. Particularly large electromechanical coupling factors were measured; i.e., 0.69 ± 0.03, 0.73 ± 0.03, and 0.59 ± 0.01 for k₁₅, k₂₄, and k_t, respectively. Temperature coefficients of the fundamental resonant frequencies in y‐ and z‐cut plates were found to be <30 ppm around room temperature.

Select this Article		Auger electron spectroscopy study of oxidation on lanthanum hexaboride C. Oshima and S. Kawai Appl. Phys. Lett. 23, 215 (1973); http://dx.doi.org/10.1063/1.1654863 (2 pages) \| Cited 7 times Online Publication Date: 9 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract In order to clarify the poisoning mechanism of the LaB₆ cathode, the temperature dependence of oxidation on a single‐crystal surface was examined by Auger electron spectroscopy. The oxidation gives the chemical effect on the La and B Auger peaks. Evidence from the Auger spectra indicates that the oxygen is more strongly bound to La ions than B ions on the surface. A correlation between the oxidation and the poisoning characteristics was established, and possible reasons for the correlation are discussed.

Select this Article		Angular dependence of optical scattering in mixed nematic‐cholesteric liquid crystals N. Oron, J. L. Yu, and M. M. Labes Appl. Phys. Lett. 23, 217 (1973); http://dx.doi.org/10.1063/1.1654864 (3 pages) Online Publication Date: 9 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract Although the wavelength of maximum scattering in cholesteric liquid crystals is strongly angularly dependent, doping with nematics can produce systems in which the angular distortion is considerably reduced, thus making color display applications much more feasible.

Select this Article		Evidence that the minimum‐energy state is not accessible to a system of droplets produced by electrohydrodynamic spraying V. E. Krohn Appl. Phys. Lett. 23, 220 (1973); http://dx.doi.org/10.1063/1.1654865 (2 pages) \| Cited 6 times Online Publication Date: 9 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract A number of arguments are presented to demonstrate that the minimum‐energy state is not accessible to a system of droplets produced by electrohydrodynamic spraying.

BROWSE VOLUMES

1 Sep 1973

Volume 23, Issue 5, pp. 211-284

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Select this Article		Doppler ambiguity in laser Doppler velocimeters W. K. George and N. S. Berman Appl. Phys. Lett. 23, 222 (1973); http://dx.doi.org/10.1063/1.1654866 (2 pages) \| Cited 5 times Online Publication Date: 9 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract An analysis of the Doppler ambiguity for the laser Doppler velocimeter is presented which accounts for the signal statistics based on a Gaussian beam intensity. Results are in excellent agreement with experiment.

Select this Article		Laser oscillation in epitaxial GaAs waveguides with corrugation feedback M. Nakamura, H. W. Yen, A. Yariv, E. Garmire, S. Somekh, and H. L. Garvin Appl. Phys. Lett. 23, 224 (1973); http://dx.doi.org/10.1063/1.1654867 (2 pages) \| Cited 31 times Online Publication Date: 9 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract Laser action was observed in GaAs epitaxial films using corrugation feedback. The output wavelength was found to depend on the corrugation period. The loss, threshold gain, and feedback parameters were determined and compared with theoretical predictions.

Select this Article		CdSnP₂☒InP heterodiodes for near‐infrared light‐emitting diodes and photovoltaic detectors J. L. Shay, K. J. Bachmann, E. Buehler, and J. H. Wernick Appl. Phys. Lett. 23, 226 (1973); http://dx.doi.org/10.1063/1.1654868 (3 pages) \| Cited 33 times Online Publication Date: 9 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract Heterodiodes have been prepared by liquid‐phase epitaxy of n‐type CdSnP₂ from Sn solution onto p‐type InP. Electroluminescence is observed near 1.4 μ with internal quantum efficiencies of 10% at 77°K and 1% at room temperature. The photovoltaic response of typical diodes shows moderate quantum efficiencies (4–12%) in the near infrared (1.2–1.0 μ).

Select this Article		Sputtered ferroelectric thin‐film electro‐optic modulator D. P. Gia Russo and C. S. Kumar Appl. Phys. Lett. 23, 229 (1973); http://dx.doi.org/10.1063/1.1654869 (3 pages) \| Cited 20 times Online Publication Date: 9 October 2003 Full Text: \| Download PDF See Also: Erratum
	+ -	Show Abstract The modulation of guided optical waves has been accomplished using an integrated ferroelectric thin‐film structure. LiTaO₃ was rf sputtered onto 7059 glass in an argon‐oxygen environment. Electrodes for applying the modulation signal were formed by chemically etching an interdigital pattern in gold which was rf sputtered onto the LiTaO₃. The observed modulation of guided waves launched in the ferroelectric film can be attributed to the linear electro‐optic effect.

Select this Article		Stimulated emission in multiple‐photon‐pumped xenon and argon excimers S. E. Harris, A. H. Kung, E. A. Stappaerts, and J. F. Young Appl. Phys. Lett. 23, 232 (1973); http://dx.doi.org/10.1063/1.1654870 (3 pages) \| Cited 5 times Online Publication Date: 9 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract Multiple photon absorption of laser radiation at 2660 and 3547 Å is used to pump excimers of Xe and Ar. Line narrowing is observed in bands ∼ 100 Å wide, centered at 1730 and 1260 Å, respectively.

Select this Article		Miniature diode‐pumped Nd : YAIG lasers R. B. Chesler and D. A. Draegert Appl. Phys. Lett. 23, 235 (1973); http://dx.doi.org/10.1063/1.1654871 (2 pages) \| Cited 22 times Online Publication Date: 9 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract A miniaturized Nd : YAIG laser is described, in which a 5 × 0.45‐mm laser rod is end pumped by a single incoherent GaAs_1−xP_x light‐emitting diode. Laser threshold was achieved at room temperature in a pulse pumped mode of operation. The measured threshold optical power incident on the end of the laser rod was 19 mW at 24°C. Based on an extrapolation from known Ga_1−xAl_xAs diode performance, it is concluded that present technology can provide diode pumps to drive a miniature Nd : YAIG laser 2.4 times above threshold continuously at room temperature.

Select this Article		Attenuation properties of optical waveguides with a metal boundary A. Reisinger Appl. Phys. Lett. 23, 237 (1973); http://dx.doi.org/10.1063/1.1654872 (3 pages) \| Cited 6 times Online Publication Date: 9 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract Attenuation coefficients have been measured at 6328 Å in liquid waveguides bounded on one side by a metal wall. Provided that the measurements be made on selected samples meeting certain criterions, Ohmic boundary absorption is found to depend on mode order N as (N + 1)² and waveguide thickness w as w⁻³, in agreement with theory.

Select this Article		On the possibility of measuring gas concentrations by stimulated anti‐Stokes scattering P. R. Régnier and J. P.‐E. Taran Appl. Phys. Lett. 23, 240 (1973); http://dx.doi.org/10.1063/1.1654873 (3 pages) \| Cited 110 times Online Publication Date: 9 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract A novel and very sensitive method for gas concentration measurements is proposed. Intense light scattering is obtained through a stimulated interaction. The method appears more practical than spontaneous Raman scattering for gas flow analysis with fine spatial resolution. Experimental results with the detection of H₂ are given.

Select this Article		Two‐photon absorption of Nd laser radiation in GaAs D. A. Kleinman, Robert C. Miller, and W. A. Nordland Appl. Phys. Lett. 23, 243 (1973); http://dx.doi.org/10.1063/1.1654874 (2 pages) \| Cited 22 times Online Publication Date: 9 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract The two‐photon absorption coefficient of GaAs at 1.32 μm is found to be 0.033 ± 0.015 cm∕MW. This value was obtained from transmission measurements employing a Q‐switched Nd☒YAG laser and an improved theoretical analysis taking into account fluctuations and the Gaussian pulse shape. Evidence of thermal self‐focusing was seen in samples with linear absorption coefficients of order 1 cm⁻¹ or larger.

Select this Article		Observations of stimulated emission from high‐pressure krypton and argon∕xenon mixtures Paul W. Hoff, James C. Swingle, and Charles K. Rhodes Appl. Phys. Lett. 23, 245 (1973); http://dx.doi.org/10.1063/1.1654875 (2 pages) \| Cited 68 times Online Publication Date: 9 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract Experimental data demonstrating coherent oscillation in high‐pressure krypton at 1457 ± 1 Å with an 8‐Å linewidth are reported. Observations of stimulated emission from argon∕xenon mixtures arising from the operation of efficient energy transfer processes and resulting in a twofold enhancement of the xenon laser output at ∼ 1720 Å are also given. The influence of collisional‐induced absorption on the oscillator output is indicated by the measurement of a blue shift in the spectrum of the stimulated output for argon∕xenon mixtures relative to the case of pure xenon.

Select this Article		Primary oxygen ion implantation effects on depth profiles by secondary ion emission mass spectrometry R. K. Lewis, J. M. Morabito, and J. C. C. Tsai Appl. Phys. Lett. 23, 260 (1973); http://dx.doi.org/10.1063/1.1654881 (3 pages) \| Cited 23 times Online Publication Date: 9 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract Both adsorbed reacted surface oxygen (surface oxide) and the dynamic implantation range of primary oxygen ions have been shown to influence secondary ion yields and complicate the interpretation of secondary ion mass spectrometry (SIMS) in‐depth analysis within the first few hundred angstroms of the surface. Surface oxide chemically enhances the secondary ion yield over the first few tens of angstroms. After removal of the surface oxide, the secondary ion emission yield reaches a minimum level, and enhancement of the secondary ion yield is then a function of the distribution of the implanted oxygen concentration. These effects have been studied on arsenic‐implant‐diffused and unimplanted single‐crystal silicon.

Select this Article		Trapped plasma triggered by carrier injection H. Kawamoto Appl. Phys. Lett. 23, 271 (1973); http://dx.doi.org/10.1063/1.1654885 (2 pages) Online Publication Date: 9 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract A trapped plasma, dense electron‐hole pairs trapped in a semiconductor p⁺‐n‐n⁺ structure, conventionally has been triggered by applying overdriven electrical fields to initiate impact ionization. In this letter it is shown that the trapped plasma also can be triggered by injecting electrons while electrical fields are held just below the critical level. In this new triggering mode, the injected electrons multiplied by impact ionization locally raise the electrical field, which thus further excites the impact ionization.

Select this Article		Light‐focusing plastic rod prepared from diallyl isophthalate‐methyl methacrylate copolymerization Yasuji Ohtsuka Appl. Phys. Lett. 23, 247 (1973); http://dx.doi.org/10.1063/1.1654876 (2 pages) \| Cited 27 times Online Publication Date: 9 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract We have prepared a light‐focusing plastic rod, having a parabolic refractive‐index distribution, from a special and simple technique of diallyl isophthalate‐methyl methacrylate copolymerization. The internal transmission loss at 6328‐Å wavelength is 1.0 dB∕m. The period of sine curved ray path through the rod and the constant of refractive‐index gradient are 50 mm and 0.0158 mm⁻², respectively. The 13‐mm‐long 3.35‐mm‐diam rod functions as a lens with a 38 ° 54′ field angle.

Select this Article		Simultaneous multiple‐wavelength operation of a tunable dye laser A. A. Friesem, U. Ganiel, and G. Neumann Appl. Phys. Lett. 23, 249 (1973); http://dx.doi.org/10.1063/1.1654877 (3 pages) \| Cited 11 times Online Publication Date: 9 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract A new technique for simultaneous operation of a dye laser at a number of independently tunable wavelengths is described. The system utilizes holographic wavelength selectors in succession, each aligned to choose one particular wavelength, and the output beam contains these wavelengths collinearly. Strong competition effects due to the homogeneous broadening of the amplifying medium reduce the multiple‐wavelength tuning range. By proper adjustment of the components in the device, this range can be increased to cover most of the single‐wavelength tuning region. The operational characteristics and the experimental results obtained at two‐wavelength operation are presented and discussed.

Select this Article		Waveguide laser for the far infrared (FIR) pumped by a CO₂ laser D. T. Hodges and T. S. Hartwick Appl. Phys. Lett. 23, 252 (1973); http://dx.doi.org/10.1063/1.1654878 (2 pages) \| Cited 28 times Online Publication Date: 9 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract Using a hollow waveguide resonator, laser operation in the far infrared (FIR) has been observed on several transitions between 40 and 200 μm from methyl alcohol excited by the resonant absorption of CO₂ pump laser lines. The preliminary performance characteristics of FIR waveguide lasers constructed from both metallic and dielectric tubes are discussed. For CO₂ pump powers of a few watts, cw output power at the milliwatt level in the FIR was observed from waveguide laser structures only a small fraction of the size of conventional FIR laser resonators.

Select this Article		Time delays in external‐cavity‐controlled GaAs∕Ga_xAl_1−xAs single‐heterostructure diode lasers J. A. Rossi, H. Heckscher, G. E. Stillman, and S. R. Chinn Appl. Phys. Lett. 23, 254 (1973); http://dx.doi.org/10.1063/1.1654879 (3 pages) \| Cited 4 times Online Publication Date: 9 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract By using a wavelength‐selective external cavity, the time delay and Q‐switching effects commonly observed in homojunction and single‐heterostructure diodes are shown to be strongly dependent on the lasing wavelength. The data suggest that the energy distribution of injected electrons as a function of time is an important factor in determining the diode delay behavior.

Select this Article		Threshold, spectral, and output power characteristics of GaAs∕Ga_1−xAl_xAs single‐heterostructure diode lasers J. A. Rossi, H. Heckscher, and S. R. Chinn Appl. Phys. Lett. 23, 257 (1973); http://dx.doi.org/10.1063/1.1654880 (3 pages) \| Cited 6 times Online Publication Date: 9 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract By using an antireflection‐coated GaAs diode in conjunction with a diffraction grating, we show that the diode threshold current and output power are strong functions of the lasing wavelength. The diode threshold is lowest at the longer wavelengths at which it is possible to lase the diode, but the total output power in this wavelength region is limited. The data are useful in interpreting the characteristics (spectral, threshold, and power) of a normal uncoated diode laser.

Select this Article		The superconductor‐semiconductor Schottky barrier diode detector M. McColl, M. F. Millea, and A. H. Silver Appl. Phys. Lett. 23, 263 (1973); http://dx.doi.org/10.1063/1.1654882 (2 pages) \| Cited 12 times Online Publication Date: 9 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract The superconductor‐semiconductor contact diode, or super‐Schottky‐barrier‐diode, has been examined theoretically and experimentally as a video detector of high‐frequency radiation. The measured noise‐equivalent power (NEP) of the device is believed to be the smallest value ever reported in the literature for video detection. Moreover, the high reliability established for the ordinary Schottky barrier diode is in evidence for the proposed diode. The doping of the semiconductor is chosen large enough so that electron tunneling dominates the volt‐ampere behavior of the diode. As such, for T < T_c and V < Δ, the diode exhibits a high degree of nonlinearity in its volt‐ampere characteristic. It is this nonlinearity that the super‐Schottky‐diode exploits. Initial results with p‐type GaAs at 1 °K have yielded an NEP of 2 × 10⁻¹⁵ W∕Hz^1∕2 at 10 GHz.

Select this Article		A new method for the determination of the interface‐state density in the presence of statistical fluctuations of the surface potential G. Baccarani, M. Severi, and G. Soncini Appl. Phys. Lett. 23, 265 (1973); http://dx.doi.org/10.1063/1.1654883 (3 pages) \| Cited 1 time Online Publication Date: 9 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract A new method for the analysis of the high‐ and low‐frequency MOS C☒V characteristics is proposed to determine the interface‐state density in the presence of statistical fluctuations of the surface potential. This method provides simultaneously the mean oxide charge and the variance of its Gaussian distribution.

Select this Article		Anomalous residual damage in Si after annealing of ``through‐oxide'' arsenic implantations T. R. Cass and V. G. K. Reddi Appl. Phys. Lett. 23, 268 (1973); http://dx.doi.org/10.1063/1.1654884 (3 pages) \| Cited 25 times Online Publication Date: 9 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract During a study of the annealing of damage produced by high‐dose (10¹⁵–10¹⁶ ions∕cm²) arsenic implantations into Si, a stable high‐defect‐density structure was observed. It resulted from implantations through thin SiO₂ films covering the Si. Formation of the stable defect structure is related to the presence of the SiO₂ film during implantation, but not during annealing. Subsequent experiments indicate that knock‐on of oxygen by the As ions is not directly responsible for the effect.