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1 Oct 1973

Volume 23, Issue 7, pp. 357-411


Frequency and temperature dependence of ultrasonic attenuation in glassy Pd☒Si‐based metal alloys

M. Dutoit and H. S. Chen

Appl. Phys. Lett. 23, 357 (1973); http://dx.doi.org/10.1063/1.1654917 (2 pages) | Cited 13 times

Online Publication Date: 9 October 2003

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The frequency and temperature dependence of the ultrasonic attenuation in glassy Pd☒Si‐based alloys has been measured. In all compositions, the room‐temperature attenuation varies as the square of frequency. A remarkably low loss of 0.06 dB∕μsec at 100 MHz for longitudinal waves is observed in alloys containing silver, a loss equal to the lowest value reported for fused silica. Below 300 K, the attenuation in Pd0.775Ag0.06Si0.165 shows a broad peak at about 25 K. This behavior is similar to that noted in chalcogenide glasses. The estimated electronic contribution to attenuation is too small to account for measured values. Present data are insufficient to ascertain what causes this relaxation peak. It may be related to the excess specific heat previously observed in these alloys at low temperatures.

Kikuchi correlations in Auger electron spectroscopy

T.W. Rusch, J.P. Bertino, and W.P. Ellis

Appl. Phys. Lett. 23, 359 (1973); http://dx.doi.org/10.1063/1.1654918 (2 pages) | Cited 27 times

Online Publication Date: 9 October 2003

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Variations in Auger electron signal intensities with changing primary electron angle of incidence have been correlated with the Kikuchi display from a Si (111) surface. From this correlation a qualitative depth distribution of the carbon contaminant is inferred.

New liquid‐crystal method for revealing ferroelectric domains

Y. Furuhata and K. Toriyama

Appl. Phys. Lett. 23, 361 (1973); http://dx.doi.org/10.1063/1.1654919 (2 pages) | Cited 49 times

Online Publication Date: 9 October 2003

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It was found that a layer of the nematic liquid crystal p‐N‐(p‐Methoxybenzylidene) amino n‐butylbenzen, extended on a triglycine sulfate crystal, takes on an orientational pattern which delineates the polarized domain structures. This technique quickly delineates domain structures in great detail and can be used on a wide variety of ferroelectric crystals. It is even applicable to a uniaxial regular type in which a domain structure cannot be detected by ordinary optical methods. The new method and the ordinary carbon powder pattern technique were compared on a triglycine sulfate crystal.

Cyclotron resonance breakdown with submillimeter lasers

Benjamin Lax and Daniel R. Cohn

Appl. Phys. Lett. 23, 363 (1973); http://dx.doi.org/10.1063/1.1654920 (2 pages) | Cited 17 times

Online Publication Date: 9 October 2003

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The effect of cyclotron resonance absorption upon laser‐induced gas breakdown is calculated. It is shown that the threshold power for breakdown is dramatically reduced at resonance. The calculations are carried out in the limits of both short and long laser pulses. In the short‐pulse limit, the threshold power is determined by the length of laser pulse; in the long‐pulse limit, it is determined by electron diffusion from the breakdown region and by energy loss resulting from elastic collisions.

Barrier determinations on Ge☒AlxGa1−xAs and GaAs☒AlxGa1−xAs p‐n heterojunctions

D. S. Howarth and D. L. Feucht

Appl. Phys. Lett. 23, 365 (1973); http://dx.doi.org/10.1063/1.1654921 (3 pages) | Cited 8 times

Online Publication Date: 9 October 2003

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The energy barriers for p‐n Ge☒AlxGa1−xAs and GaAs☒AlxGa1−xAs heterojunctions have been determined by capacitance measurements. The results indicate that the valence band of AlxGa1−xAs tends to remain fixed with respect to the vacuum level for different values of x. This leads to spiked barriers in the conduction band for these junctions. The values determined for the barriers are consistent with measurements on p‐p Ge☒GaAs junctions.

Temperature and frequency dependence of infrared absorption as a diagnostic tool

M. Sparks

Appl. Phys. Lett. 23, 368 (1973); http://dx.doi.org/10.1063/1.1654922 (2 pages) | Cited 3 times

Online Publication Date: 9 October 2003

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Recent developments render untenable a proposed method of distinguishing between intrinsic and extrinsic infrared absorption on the basis of the proposed temperature dependence. However, when the proper temperature dependence of multiphonon absorption is accounted for and the possibility of other intrinsic processes is taken into account, the temperature and frequency dependence of the absorption of both the best available and intentionally imperfected crystals should be useful in studying extrinsic processes.

Optically pumped 33‐atm CO2 laser

T. Y. Chang and O. R. Wood

Appl. Phys. Lett. 23, 370 (1973); http://dx.doi.org/10.1063/1.1654923 (3 pages) | Cited 28 times

Online Publication Date: 9 October 2003

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Single nanosecond laser pulses at wavelengths near 10 μm have been obtained by using a pulsed HBr laser to optically pump pure CO2 gas at pressures up to 33 atm in a 1‐mm‐long optical resonator. At pressures above 17 atm, the laser oscillates on the 10.3‐μm R branch rather than on the usual 10.6‐μm P branch.

Measurements of negative gain for Hg2 continuum radiation

R. M. Hill, D. J. Eckstrom, D. C. Lorents, and H. H. Nakano

Appl. Phys. Lett. 23, 373 (1973); http://dx.doi.org/10.1063/1.1654924 (2 pages) | Cited 14 times

Online Publication Date: 9 October 2003

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Gain measurements have been made at wavelength intervals over the continuum bands of high‐pressure mercury excited by a short high‐intensity electron beam pulse. These measurements, which utilized both continuum and laser light sources, showed net absorption at all wavelengths tested. This indicates that Hg2* has a larger cross section for absorption than for stimulated emission to the repulsive ground state, and virtually elminates the chances of laser action on these transitions.

Determination of vibrational and translational temperatures in gas‐dynamic lasers

P. V. Avizonis, D. R. Dean, and R. Grotbeck

Appl. Phys. Lett. 23, 375 (1973); http://dx.doi.org/10.1063/1.1654925 (4 pages) | Cited 13 times

Online Publication Date: 9 October 2003

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The vibrational and rotational temperatures in the supersonic flow of a gas‐dynamic laser have been determined simultaneously by using spectral gain measurement techniques (over a number of rotational lines). The vibrational and rotational temperature and, consequently, the optical energy in the flow are reported for two different gas‐dynamic lasers having significantly different area ratio nozzles and varying stagnation temperatures.

Analysis of intensity correlation spectra of mixtures of polystyrene latex spheres by least squares

C. B. Bargeron

Appl. Phys. Lett. 23, 379 (1973); http://dx.doi.org/10.1063/1.1654926 (3 pages) | Cited 15 times

Online Publication Date: 9 October 2003

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This letter presents the results of an experimental investigation of the self‐beat intensity correlation spectra of light scattered from mixtures of two sizes of polystyrene latex spheres of an approximately 1 : 2 diameter ratio. The precision of the data permits the deduction of scattering amplitude ratios (concentration ratios) and particle diameters by straightforward least‐squares analysis, which, in general, are within 5% of actual values. The use of computer‐evaluated uncertainties in calculating weighted means is found to improve the statistical analysis.

Radiative lifetime in GaAs1−xPx p‐n junctions

H. D. Edmonds and A. W. Smith

Appl. Phys. Lett. 23, 382 (1973); http://dx.doi.org/10.1063/1.1654927 (3 pages) | Cited 8 times

Online Publication Date: 9 October 2003

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The radiative lifetime in GaAs1−xPx light‐emitting diodes is observed to increase from 2 to 11 nsec with increasing injection level. A related increase in quantum efficiency is also observed. These observations are explained by using a trap‐filling model, where the traps arise from defects in the epitaxially grown GaAs1−xPx.

High‐power ultraviolet laser radiation from molecular xenon

William M. Hughes, J. Shannon, A. Kolb, E. Ault, and M. Bhaumik

Appl. Phys. Lett. 23, 385 (1973); http://dx.doi.org/10.1063/1.1654928 (3 pages) | Cited 17 times

Online Publication Date: 9 October 2003

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Experiments have been conducted on high‐pressure Xe gas undergoing excitation by a high‐current pulsed relativistic electron beam. Spectral, temporal, and calorimetric diagnostics were performed. The results establish that lasing in molecular Xe has been achieved with the highest laser power yet obtained in the vacuum ultraviolet. Premature termination of light output indicates the possibility of significant effects due to thermal collisions.

Neodymium‐doped silica lasers in end‐pumped fiber geometry

J. Stone and C.A. Burrus

Appl. Phys. Lett. 23, 388 (1973); http://dx.doi.org/10.1063/1.1654929 (2 pages) | Cited 42 times

Online Publication Date: 9 October 2003

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Fused SiO2 has been used as a new noncrystalline host for the fabrication of two types of neodymium‐doped room‐temperature lasers, one of which operates at 1.06‐μm and the other at 1.08‐μm wavelength. The lasers have the geometry of clad optical fibers, with active cores as small as 15‐μm diameter by 1‐cm length. They are end pumped at 0.590 and 0.5145 μm with a pulsed dye laser and an argon ion laser, respectively. Thresholds as low as 1–2 mW of absorbed pump power in a 40‐μm‐diam core have been obtained, and eventual pumping with high‐radiance semiconductor optical sources appears feasible.

High‐frequency electron conductivity mobility in vapor‐phase homoepitaxial silicon

C.P. Wen, Y.S. Chiang, A.F. Young, and A. Presser

Appl. Phys. Lett. 23, 390 (1973); http://dx.doi.org/10.1063/1.1654930 (2 pages)

Online Publication Date: 9 October 2003

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The average room‐temperature electron conductivity mobility μc in silicon measured at ultrahigh frequencies was found to be approximately 30% higher than the average drift mobility reported in the literature for bulk samples with identical resistivity. The discrepancy is attributed to the minimized effect of traps in silicon at ultrahigh frequencies where the period of the rf signal is considerably shorter than the lifetime of the traps.

Low‐pressure gas breakdown with CO2 laser radiation

M.P. Hacker, D.R. Cohn, and B. Lax

Appl. Phys. Lett. 23, 392 (1973); http://dx.doi.org/10.1063/1.1654931 (3 pages) | Cited 10 times

Online Publication Date: 9 October 2003

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The threshold power for CO2‐laser‐induced gas breakdown in helium has been studied at many pressures in the range of 50–700 Torr by using laser pulses of two different lengths. These measurements show that electron diffusion losses play an important role at these pressures. The experimental data can be quantitatively accounted for by taking into account both diffusion losses and the finite length of the laser pulse. In addition, it is found that the breakdown threshold power is significantly lowered when longer laser pulses are used and that elastic losses appear to play an important role at pressures above 500 Torr.

Light shift effects in the Rb87 maser

G. Busca, M. Tetu, and J. Vanier

Appl. Phys. Lett. 23, 395 (1973); http://dx.doi.org/10.1063/1.1654932 (2 pages) | Cited 2 times

Online Publication Date: 9 October 2003

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A theoretical analysis of the effect of the pumping light on the Rb87 maser frequency is summarized. Experimental results obtained on such a maser are given and are found to agree with the theory. A new method of tuning the maser cavity for a light‐independent frequency setting (LIFS) is proposed.

Bistable impedance states in MIS structures through controlled inversion

H. Kroger and H.A.R. Wegener

Appl. Phys. Lett. 23, 397 (1973); http://dx.doi.org/10.1063/1.1654933 (3 pages) | Cited 11 times

Online Publication Date: 9 October 2003

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Metal silicon‐nitride n‐p+ silicon diodes have been fabricated with I‐V characteristics similar to those of a four‐layer diode. Switching between the two impedance states, whose impedance levels differ by a factor of the order of 106, can be accomplished in less than 5 nsec. The impedance of the device is controlled by the presence or absence of the inversion layer of the MIS structure. Both impedance states require a nonzero conductance of the insulator.

Effects of gamma radiation on charge‐coupled devices

D.F. Barbe, J.M. Killiany, and H.L. Hughes

Appl. Phys. Lett. 23, 400 (1973); http://dx.doi.org/10.1063/1.1654934 (3 pages) | Cited 1 time

Online Publication Date: 9 October 2003

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The effects of ionizing radiation (gamma) on the operation of two‐phase stepped‐oxide surface‐channel charge‐coupled devices (CCD's) were studied. For total doses up to 105 rad (Si), the primary cause of changes in CCD operation is a negative shift in the flat‐band voltage, with the flat‐band voltage shift for the polysilicon electrodes being greater than that for the aluminum electrodes. For fixed applied voltages, the flat‐band voltage shifts cause (i) an increase in transfer inefficiency due to the cutoff of fat zero, and (ii) a decrease in the full‐well capacity due to the modified surface potential profile. Up to 105 rad, the preirradiation transfer inefficiency could be recovered by changing the input‐gate voltage to compensate for the flat‐band voltage shift. Up to 105 rad, no significant effects due to radiation‐induced interface states were observed; however, at 3 × 105 rad, increases in transfer inefficiency and dark current attributed to radiation‐induced interface states were observed.

Optical waveguides in single layers of Ga1−xAlx As grown on GaAs substrates

E. Garmire

Appl. Phys. Lett. 23, 403 (1973); http://dx.doi.org/10.1063/1.1654935 (2 pages) | Cited 10 times

Online Publication Date: 9 October 2003

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Efficient low‐loss optical waveguides have been made with the growth of only a single epilayer of Ga1−xAlx on GaAs substrates. The AlAs concentration gradient which is grown by liquid‐phase epitaxy using thin gallium melts is the cause of the guiding.

Hard optical storage through electrical sensitivity switching

Takitaro Morikawa, Takashi Nakajima, and Kenjiro Sakurai

Appl. Phys. Lett. 23, 405 (1973); http://dx.doi.org/10.1063/1.1654936 (2 pages) | Cited 1 time

Online Publication Date: 9 October 2003

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The sensitivity‐switched holographic memory of Te☒Ge☒As amorphous semiconductor film was investigated. The sensitivity of the film can be enhanced only in writing by bias voltage switching. Holograms were easily stored with the simultaneous application of bias voltages and low‐power laser beams. Coupled with optoelectronic hybrid systems, these amorphous materials are expected to be useful for laser information processing.

Properties of Nb Josephson microbridges

R.B. Laibowitz

Appl. Phys. Lett. 23, 407 (1973); http://dx.doi.org/10.1063/1.1654937 (2 pages) | Cited 9 times

Online Publication Date: 9 October 2003

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Electron‐beam lithographic techniques have been used to fabricate Nb microbridges, and their superconducting properties have been investigated. A reduced Tc is found for some of the links, and microwave‐induced steps and the temperature dependence of the critical current consistent with the Josephson effect are observed.

Lorentz electron microscopy of magnetic domains in a Co☒Ce permanent magnet

H. J. Leamy and M. L. Green

Appl. Phys. Lett. 23, 409 (1973); http://dx.doi.org/10.1063/1.1654938 (2 pages) | Cited 5 times

Online Publication Date: 9 October 2003

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Lorentz electron microscopy techniques have been applied to a study of 180° magnetic domain wall structure in a Co3.5CuFe0.5Ce1.09 permanent magnet. The asymptotic wall width δ was determined to be 94 Å, accurate to within approximately ± 30%. This leads to a wall energy of ∼ 24 erg∕cm2 and an exchange constant of ∼ 1.8 × 10−6 erg∕cm when the standard continuum model for the wall structure is assumed.
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Erratum: Acoustic surface wave Δv∕v waveguides on anisotropic substrates

L. A. Coldren and R. V. Schmidt

Appl. Phys. Lett. 23, 411 (1973); http://dx.doi.org/10.1063/1.1654939 (1 page)

Online Publication Date: 9 October 2003

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Erratum: Laser‐induced shock effects in Plexiglas and 6061‐T6 aluminum

Jay A. Fox and Dallas N. Barr

Appl. Phys. Lett. 23, 411 (1973); http://dx.doi.org/10.1063/1.1654940 (1 page)

Online Publication Date: 9 October 2003

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