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15 Oct 1973

Volume 23, Issue 8, pp. 415-491

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Surface‐wave acoustoelectric image scanner

S. Takada, H. Hayakawa, and N. Mikoshiba

Appl. Phys. Lett. 23, 415 (1973); http://dx.doi.org/10.1063/1.1654941 (2 pages) | Cited 11 times

Online Publication Date: 9 October 2003

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An optical image scanning method using the longitudinal acoustoelectric effect by surface waves in the coupled p‐Si∕LiNbO3 system is described. By means of the coupling between electrons in a weak inversion layer and surface waves (frequency, 87 MHz; time duration, 400 nsec), a resolution of 2 lines∕mm can be obtained.

Acousto‐optic diffraction of guided optical waves in LiNbO3

R. V. Schmidt, I. P. Kaminow, and J. R. Carruthers

Appl. Phys. Lett. 23, 417 (1973); http://dx.doi.org/10.1063/1.1654942 (3 pages) | Cited 19 times

Online Publication Date: 9 October 2003

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We report acousto‐optic diffraction modulation of a guided optical wave in LiNbO3 by an acoustic surface wave. 250 mW of acoustic power produces 100% modulation of the zero‐order beam.

Picosecond framing photography of a laser‐produced plasma

M. C. Richardson and K. Sala

Appl. Phys. Lett. 23, 420 (1973); http://dx.doi.org/10.1063/1.1654943 (3 pages) | Cited 8 times

Online Publication Date: 9 October 2003

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Sequential two‐dimensional photographs of a laser‐produced plasma in air with effective individual exposure times of [inverted lazy s] 5 psec have been obtained by utilizing a focal‐plane optical Kerr effect shutter.

Electron beam concentration enhanced by a laser‐produced plasma

P. A. Miller, J. Chang, and G. W. Kuswa

Appl. Phys. Lett. 23, 423 (1973); http://dx.doi.org/10.1063/1.1654944 (3 pages) | Cited 9 times

Online Publication Date: 9 October 2003

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A new technique has been developed for the production of tightly focused intense relativistic electron beams. A collimated plume of laser blowoff plasma is injected on axis into the anode‐cathode gap region of a low‐impedance diode prior to the beam pulse. The electron beam is found to pinch in the diode to current densities ≥ 2 MA∕cm2.

Limiting currents in unneutralized relativistic electron beams

J. A. Nation and M. Read

Appl. Phys. Lett. 23, 426 (1973); http://dx.doi.org/10.1063/1.1654945 (3 pages) | Cited 31 times

Online Publication Date: 9 October 2003

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The space‐charge depression of the potential within an unneutralized relativistic electron beam limits the beam current. Calculations of this effect are presented for an annular beam and compared to experiment.

X radiation from high‐energy‐density exploded‐wire discharges

D. Mosher, S. J. Stephanakis, I. M. Vitkovitsky, C. M. Dozier, L. S. Levine, and D. J. Nagel

Appl. Phys. Lett. 23, 429 (1973); http://dx.doi.org/10.1063/1.1654946 (2 pages) | Cited 41 times

Online Publication Date: 9 October 2003

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Exploded‐wire discharges of tungsten and titanium driven by a high‐power pulse generator have been used to produce intense x‐ray continuum and line radiation. A calibrated LiF crystal spectrograph recorded the radiation spectrum in the 3‐ to 25‐keV range. More than 20 J of x radiation are emitted in this photon energy band by tungsten plasmas in less than 50 nsec. The source of emission is less than 1 mm in diameter and about 3.5 cm long.

Origin of the holding current in threshold switching devices

Laurence P. Flora and David Adler

Appl. Phys. Lett. 23, 431 (1973); http://dx.doi.org/10.1063/1.1654947 (3 pages) | Cited 2 times

Online Publication Date: 9 October 2003

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It is shown that the holding current in threshold switching devices is a consequence of the time rate of recovery of threshold voltage taken together with the device capacitance. The application of these considerations to recent double‐pulse experiments is also discussed.

HF chemical lasing at higher vibrational levels

S. W. Mayer, D. Taylor, and M. A. Kwok

Appl. Phys. Lett. 23, 434 (1973); http://dx.doi.org/10.1063/1.1654948 (3 pages) | Cited 2 times

Online Publication Date: 9 October 2003

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HF lasing has been obtained from the P6(5) and P6(4) transitions as well as several P5 and P4 transitions of HF. Lasing from these high vibrational levels was produced by transverse pulsed discharges in mixtures of HI, He, and SF6 or SO2F2. The low bond energy of HI contributed to doubling the energy of laser pulses compared to the energy observed when H2 was substituted for HI. The HF laser frequencies were also measured for other fuels with low RH bond energies.

Optical storage in VO2 films

A. W. Smith

Appl. Phys. Lett. 23, 437 (1973); http://dx.doi.org/10.1063/1.1654949 (2 pages) | Cited 22 times

Online Publication Date: 9 October 2003

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The use of VO2 films for direct‐bit optical storage with near‐infrared lasers is demonstrated. The VO2 response is fast (< 10 ns), and large read signals are obtained with unpolarized light. A writing threshold of 0.03 nJ∕μm2 is observed.

Electro‐optic properties of reverse‐biased GaAs epitaxial thin films at 10.6 μm

P. K. Cheo

Appl. Phys. Lett. 23, 439 (1973); http://dx.doi.org/10.1063/1.1654950 (3 pages) | Cited 7 times

Online Publication Date: 9 October 2003

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Measurements of the electro‐optic properties of high‐resistivity GaAs epitaxial thin films have been made at the 10.6‐μm CO2 laser wavelength by a novel rf interferometric technique. The described technique affords very accurate and convenient measurements of the phase shift of a 10.6‐μm guided wave mode in thin films as a function of reverse‐biased junction voltage. The measured electro‐optic coefficient for thin films is found to be in good agreement with conventional measurements, r41 = 1.2 × 10−10 cm∕V at 10 μm, for bulk GaAs electro‐optic crystals.

Jet stream cw dye laser for high‐resolution spectroscopy

R. E. Grove, F. Y. Wu, L. A. Hackel, D. G. Youmans, and S. Ezekiel

Appl. Phys. Lett. 23, 442 (1973); http://dx.doi.org/10.1063/1.1654951 (3 pages) | Cited 10 times

Online Publication Date: 9 October 2003

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A stable single‐frequency jet stream cw dye laser has been used to obtain an absorption spectrum of the hyperfine structure of I2127 in a molecular beam with a resolution of 5 parts in 109.

HgCdTe varactor photodiode detection of cw CO2 laser beats beyond 60 GHz

D. L. Spears and Charles Freed

Appl. Phys. Lett. 23, 445 (1973); http://dx.doi.org/10.1063/1.1654952 (3 pages) | Cited 8 times

Online Publication Date: 9 October 2003

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The simultaneous operation of a HgCdTe photodiode as an optical heterodyne receiver and a varactor microwave harmonic generator and frequency downconverter has made possible the detection of CO2 laser beats to beyond 60 GHz.

Hg‐implanted Hg1−x Cdx Te infrared photovoltaic detectors in the 8‐ to 14‐μm range

G. Fiorito, G. Gasparrini, and F. Svelto

Appl. Phys. Lett. 23, 448 (1973); http://dx.doi.org/10.1063/1.1654953 (2 pages) | Cited 5 times

Online Publication Date: 9 October 2003

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p‐n junction photovoltaic detectors have been obtained by Hg implantation in Hg1−x Cdx Te for the 2‐ to 14‐μm band. High‐sensitivity photodiodes were achieved over the entire range quoted; the most interesting results are those concerning the 8‐ to 14‐μm range; peak detectivity better than 1010 cm Hz1∕2 W−1, a zero‐bias resistance area product between 2.4–0.12 Ω cm2, spcific responsivity between 1.2 × 104 and 5 × 102 V W−1, and quantum efficiency between 65% and 45% were obtained.

Infrared photovoltaic detectors from ion‐implanted CdxHg1−xTe

J. Marine and C. Motte

Appl. Phys. Lett. 23, 450 (1973); http://dx.doi.org/10.1063/1.1654954 (3 pages) | Cited 11 times

Online Publication Date: 9 October 2003

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We have fabricated n‐p photovoltaic detectors in CdxHg1−xTe using aluminum implantation to create the n‐type region. Implanted diodes made in this material with a composition x = 0.18, which corresponds to a band gap of 0.1 eV, had a zero‐bias resistance of 1 kΩ at 77°K for a 200 × 250‐μm sensitive area. The spectral response was almost flat in the range 4–12 μm with a quantum efficiency as high as 57% at 10.6 μm. The measured detectivity for a 30° field of view is 7.3 × 1010 cm Hz1∕2 W−1 at 10.6 μm. This is one of the highest detectivities ever reported at this wavelength. Finally, the frequency response of these diodes used in a heterodyne detection system operating with a CO2 laser was 1 GHz.

X‐ray photoelectron emission measurements of the valence band density of states and core levels of CuAlS2

M. J. Luciano and C. J. Vesely

Appl. Phys. Lett. 23, 453 (1973); http://dx.doi.org/10.1063/1.1654955 (2 pages) | Cited 13 times

Online Publication Date: 9 October 2003

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We report x‐ray photoelectron emission measurements of the ternary chalcopyrite compound CuAlS2. The measurements include the core electron levels and the valence band density‐of‐states distribution. The structure of the valence band includes the s band located 8.5 eV below the valence band edge, the p band located 3.0 eV below, and the copper d band located 0.7 eV below. Our measurements also indicate a higher degree of hybridization between the d and p bands than was observed in AgGaS2.

Epitaxial silicon layers grown on ion‐implanted silicon nitride layers

R. J. Dexter, S. B. Watelski, and S. T. Picraux

Appl. Phys. Lett. 23, 455 (1973); http://dx.doi.org/10.1063/1.1654956 (3 pages) | Cited 39 times

Online Publication Date: 9 October 2003

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Buried layers of silicon nitride approximately 4000 Å in width have been formed by ion implantation while retaining a relatively undamaged silicon surface region. Epitaxial silicon of 2‐μm thickness grown on these surfaces exhibits significantly lower defect concentrations than do silicon layers on spinel, as determined by optical microscopy and by proton channeling measurements. The breakdown voltage of the silicon nitride layers is approximately 7 × 105 V∕cm, and the refractive index is 2.05 at 6328 Å.

Schottky barrier height of n‐InxGa1−xAs diodes

K. Kajiyama, Y. Mizushima, and S. Sakata

Appl. Phys. Lett. 23, 458 (1973); http://dx.doi.org/10.1063/1.1654957 (2 pages) | Cited 130 times

Online Publication Date: 9 October 2003

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The barrier heights ϕB of Au∕n‐InxGa1−xAs diodes are measured by the capacitance‐voltage and saturation current methods. The composition dependence of the barrier height is ϕB (eV) = 0.95 − 1.90x + 0.90x2. A low barrier height with a relatively wide band gap is obtained in this system.

Reversible microstructural control of electrical properties of WSe2

William D. Sproul and Marc H. Richman

Appl. Phys. Lett. 23, 460 (1973); http://dx.doi.org/10.1063/1.1654958 (2 pages) | Cited 1 time

Online Publication Date: 9 October 2003

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Microstructural occlusions in semiconductor single crystals of WSe2 affect the electrical properties of the material. The presence of the occlusions, which are believed to be a new phase of tungsten selenide, W3Se4, increases the size of the band gap by a factor of 2. Annealing at temperatures just below the decomposition temperature of WSe2 causes the occlusions to revert back to the normal WSe2 structure.

Zinc ion implantation of sulfur‐doped GaP

P. M. Hemenger and B. C. Dobbs

Appl. Phys. Lett. 23, 462 (1973); http://dx.doi.org/10.1063/1.1654959 (3 pages) | Cited 5 times

Online Publication Date: 9 October 2003

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Sulfur‐doped GaP has been implanted with 250‐keV Zn ions to a total dose of 1016 cm−2 and then annealed at 900 °C. Hall data obtained with the van der Pauw configuration indicate type conversion in a surface layer that has a thickness, estimated from diffusion data and electrical transport properties, on the order of 10 μm. For large implant doses followed by annealing, the diffusion of Zn in GaP plays a significant role in the final location of the implanted ions.

Intense recombination radiation and room‐temperature lasing in CdS excited by high‐voltage rf current pulses

F. H. Nicoll

Appl. Phys. Lett. 23, 465 (1973); http://dx.doi.org/10.1063/1.1654960 (2 pages) | Cited 12 times

Online Publication Date: 9 October 2003

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Intense recombination radiation has been observed in CdS crystals along certain crystallographic planes when excited by short high‐voltage rf pulses applied through an electrical contact. The addition of high‐reflectivity dielectric mirrors provides a Fabry‐Perot cavity in which pulsed lasing occurs at room temperature. Some mechanisms are suggested for the new form of high‐density excitation, and possible implications are discussed.

Fast linear detection system for TE CO2 lasers

A. J. Alcock and A. C. Walker

Appl. Phys. Lett. 23, 467 (1973); http://dx.doi.org/10.1063/1.1654961 (2 pages) | Cited 5 times

Online Publication Date: 9 October 2003

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A preliminary study of up‐conversion as an approach to high‐speed detection of 10.6‐μm laser radiation is reported. Using synchronized Nd : YAG and TEA CO2 lasers, conversion to 0.96‐μm radiation in proustite has permitted the detection of mode‐locked TEA laser pulses with an overall system bandwidth of 900 MHz.

Defect structure introduced during operation of heterojunction GaAs lasers

P. Petroff and R. L. Hartman

Appl. Phys. Lett. 23, 469 (1973); http://dx.doi.org/10.1063/1.1654962 (3 pages) | Cited 183 times

Online Publication Date: 9 October 2003

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The nature and origin of the defects responsible for the rapid degradation of stripe geometry GaAs☒GaAlAs double‐heterostructure lasers have been identified by transmission electron microscopy. These defects are formed by a three‐dimensional dislocation network which originates at a dislocation crossing the GaAlAs and GaAs epilayers. The propagation of the dislocation network takes place by a climb mechanism induced by the operation of the device.

Effect of neutron irradiation on GaAs1−xPx electroluminescent diodes

A. S. Epstein, S. Share, R. A. Polimadei, and A. H. Herzog

Appl. Phys. Lett. 23, 472 (1973); http://dx.doi.org/10.1063/1.1654963 (3 pages) | Cited 4 times

Online Publication Date: 9 October 2003

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Light‐emitting diodes fabricated from the GaAs1−xPx alloy system undergo degradation upon neutron irradiation. It has been found that the smallest change in efficiency occurs when the composition of the alloy is between x = 0.30 and x = 0.75. The change in minority‐carrier lifetime, however, is approximately constant throughout the entire alloy range. It is suggested that the relative insensitivity to neutron irradiation of the efficiency in the alloy range x = 0.30–0.75 is connected with the inherent disorder already present within the GaAs1−xPx alloy system.

High‐efficiency coaxial waveguide dye laser with internal excitation

P. Burlamacchi and R. Pratesi

Appl. Phys. Lett. 23, 475 (1973); http://dx.doi.org/10.1063/1.1654964 (2 pages) | Cited 9 times

Online Publication Date: 9 October 2003

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A new configuration for flash‐pumped dye lasers is presented. A coaxial dye cell with internal excitation is used and 2% efficiency is feasible. Optical cavity deterioration produced by thermally induced refractive index gradients is compensated by the coaxial geometry, and low‐loss guided propagation results without any recirculation of the dye solution.

Laser Doppler interferometry for measuring small absorption coefficients

L. H. Skolnik, A. Hordvik, and A. Kahan

Appl. Phys. Lett. 23, 477 (1973); http://dx.doi.org/10.1063/1.1654965 (3 pages) | Cited 10 times

Online Publication Date: 9 October 2003

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A laser Doppler interferometric technique for measuring small absorption coefficients of infrared‐transmitting materials is described. The interferometer is calibrated as a remote temperature sensor by monitoring optical path length changes of the sample as a function of temperature. The sample is then irradiated by a CO2 laser and the change in optical path due to absorbed laser energy is observed interferometrically as a function of time. From this measurement and the calibration data, a temperature‐vs‐time curve is generated from which the absorption coefficient of the sample at 10.6 μ may be calculated.
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