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1 Nov 1973

Volume 23, Issue 9, pp. 493-530


Formation of vanadium silicides by the interactions of V with bare and oxidized Si wafers

K. N. Tu, J. F. Ziegler, and C. J. Kircher

Appl. Phys. Lett. 23, 493 (1973); http://dx.doi.org/10.1063/1.1654972 (3 pages) | Cited 43 times

Online Publication Date: 9 October 2003

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Formation of vanadium silicides by the interactions of vanadium with bare and oxidized Si wafers has been studied by both x‐ray diffraction and He ion backscattering techniques. X‐ray diffraction was used to identify phases and ion backscattering to profile compositional changes. In the case of V on Si, the silicide VSi2, which is a silicon‐rich phase, was found to form at temperatures from 600 to 1000 °C. In the case of V on SiO2, reactions took place only at temperatures above 800 °C, and the reaction products were identified to be V3Si, V5SI3, and V2O5. Both V3Si and V5Si3 are vandium‐rich phases, and the V3Si that we found was a continuous layer between the substrate and the other two phases, and became superconducting at about 15 °K.

Electromigration failure in NiCr thin‐film stripes

Tomomitsu Satake

Appl. Phys. Lett. 23, 496 (1973); http://dx.doi.org/10.1063/1.1654973 (3 pages) | Cited 4 times

Online Publication Date: 9 October 2003

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Electromigration‐induced failure in NiCr thin‐film stripes is investigated. The composition of evaporated NiCr thin films is 77:23 Ni∕Cr in weight %, according to a spectroscopic analysis. The mean time to failure (MTF) of NiCr thin‐film stripes can be qualitatively expressed by a relation similar to that held in the MTF of Al thin‐film stripes, i.e., MTF ∝ J−n exp(φ∕kT). However, the values of n and φ of NiCr are 13 and 1.14 eV, respectively, whereas those of Al are 2 [inverted lazy s] 3 and 0.41 eV, respectively.

Modulation of hypersound by ultrasound via strong collinear interaction

J. M. Rouvaen, E. Bridoux, M. Moriamez, and R. Torguet

Appl. Phys. Lett. 23, 499 (1973); http://dx.doi.org/10.1063/1.1654974 (3 pages) | Cited 5 times

Online Publication Date: 9 October 2003

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We study theoretically and experimentally the collinear mixing of acoustic waves in lead molybdate. Owing to the large coupling constant of this crystal, we have obtained a very efficient acoustic mixer or modulator via the interaction of a 750‐MHz hypersonic signal wave and a 140‐MHz ultrasonic pump wave.

Theory of electromechanically induced acoustic phonon echoes

Peter A. Fedders and Eugene Y. C. Lu

Appl. Phys. Lett. 23, 502 (1973); http://dx.doi.org/10.1063/1.1654975 (2 pages) | Cited 19 times

Online Publication Date: 9 October 2003

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A theory of electromechanically induced acoustic phonon echoes is presented. The predicted echo pulse height and width are found to depend on the exciting pulse widths and frequencies, in agreement with experimental observations. Interesting new experiments with much larger predicted echo effects are suggested.
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Comments on ``On the reflections of normal‐incidence Bleustein‐Gulyaev surface waves''

Chin‐Lin Chen

Appl. Phys. Lett. 23, 504 (1973); http://dx.doi.org/10.1063/1.1654976 (1 page)

Online Publication Date: 9 October 2003

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An algebraic error is found in a recently published letter. Because of this error, coupled with an oversimplified assumption, an incorrect conclusion is obtained.

Surface wave harmonic generation on sapphire and α‐quartz

P.J. Vella and G.I.A. Stegeman

Appl. Phys. Lett. 23, 505 (1973); http://dx.doi.org/10.1063/1.1654977 (3 pages) | Cited 1 time

Online Publication Date: 9 October 2003

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The cross sections for second harmonic generation of surface acoustic waves have been calculated from the rigorous theory of thermoelasticity. In this treatment, the nonlinear wave equation is satisfied by mechanical displacements which also maintain the boundary stress free at the harmonic frequency. Calculations for various cuts on α‐quartz and sapphire are presented.

An electron attachment plasma instability

D. H. Douglas‐Hamilton and Siva A. Mani

Appl. Phys. Lett. 23, 508 (1973); http://dx.doi.org/10.1063/1.1654978 (3 pages) | Cited 24 times

Online Publication Date: 9 October 2003

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A new type of plasma instability is described in an electron‐beam ionized discharge. This instability occurs in gas mixtures in which the dissociative attachment rate increases strongly with electric field. It has been observed experimentally in He:H2O 740:20 and in He:CO2 1:1 and 9:1 mixtures. The values of the ionization source function S and of the electric field E at which the wave instability occurs are predicted using a Fourier analysis of the linearized kinetic rate equations. This yields the condition for instability as S < (1∕α)[Eδβ∕δE) − β]2, where α is the electron‐ion recombination coefficient and β is the electron neutral attachment rate.

Electroluminescence and photoluminescence of GaAs : Ge prepared by liquid phase epitaxy

H. Kressel and M. Ettenberg

Appl. Phys. Lett. 23, 511 (1973); http://dx.doi.org/10.1063/1.1654979 (3 pages) | Cited 15 times

Online Publication Date: 9 October 2003

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Optical data are presented relating the photoluminescence emission of GaAs : Ge epitaxial layers with hole concentrations in the range from 6 × 1016 to 2.7 × 1019 cm−3. These data are supplemented with electroluminescence results obtained using diodes where the p side of the junction consists of GaAs : Ge. Measurements reported include the peak position of the electroluminescence and photoluminescence peaks, half‐intensity bandwidths, and radiative efficiency at room temperature.

Double‐discharge copper vapor laser with copper chloride as a lasant

C. J. Chen, N. M. Nerheim, and G. R. Russell

Appl. Phys. Lett. 23, 514 (1973); http://dx.doi.org/10.1063/1.1654980 (2 pages) | Cited 40 times

Online Publication Date: 9 October 2003

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A copper vapor laser utilizing copper chloride as a lasant in a heated discharge tube has been studied. The lasing action was observed only when two successive discharge current pulses at suitable time intervals were applied. The first pulse is considered to be a dissociation pulse to produce copper and chlorine atoms; the second to be a pumping pulse to produce population inversion. The maximum energy density measured to date was 17 μJ∕cm3.

Theory of far‐infrared generation by optical mixing and stimulated Raman scattering via spin‐flip transitions in InSb

Y. R. Shen

Appl. Phys. Lett. 23, 516 (1973); http://dx.doi.org/10.1063/1.1654981 (3 pages) | Cited 8 times

Online Publication Date: 9 October 2003

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Far‐infrared generation by optical mixing and by stimulated Raman scattering via spin‐flip transitions is treated using the general formalism of coherent excitation of polaritons. Practical numerical examples for InSb are given. The result for the case of optical mixing agrees well with the experimental result of Nguyen and Bridges. The calculation also suggests that the far‐infrared output from a spin‐flip Raman laser should be easily observable.

NdLa pentaphosphate laser performance

T. C. Damen, H. P. Weber, and B. C. Tofield

Appl. Phys. Lett. 23, 519 (1973); http://dx.doi.org/10.1063/1.1654982 (2 pages) | Cited 24 times

Online Publication Date: 9 October 2003

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Laser operation is reported in a new crystalline material with high Nd content (2 × 1021 cm−3) whose concentration quenching is smaller than in other hosts. This material, NdLa pentaphosphate (Nd0.5La0.5P5O14) in the form of a 35‐μm‐thick crystal platelet was pumped with a pulsed Rhodamine 6G dye laser. The oscillation threshold with feedback from the uncoated surfaces was [inverted lazy s] 20 μJ of absorbed pump light. This indicates an optical gain coefficient of [inverted lazy s] 800 cm−1 corresponding to an excitation of more than half of the Nd ions in the material. This high gain resulted in a compression of the cavity mode spacing by a factor of 14. Using external mirrors, cw oscillation with a threshold of 25 mW absorbed power of an argon laser was achieved with a 1.4‐mm‐thick crystal. Measured parameters of the lasers are in good agreement with theory.

Field‐dependent conductivity of chalcogenide glasses

D. K. Reinhard, F. O. Arntz, and D. Adler

Appl. Phys. Lett. 23, 521 (1973); http://dx.doi.org/10.1063/1.1654983 (3 pages) | Cited 7 times

Online Publication Date: 9 October 2003

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The preswitching exponential increase of dark conductivity with field observed in many chalcogenide glasses can be identified with either a change in the free‐carrier concentration or a change in the carrier mobility. Small‐signal photoconductance measurements on thin films of amorphous Te40As35Si15Ge7P3 in the field‐activated regime indicate that it is the carrier concentration which increases exponentially with applied field. In addition, studies of variations in switching parameters introduced by intense electron irradiation suggest that a critical degree of carrier trapping is not a precursor to threshold switching. Both the photoconductivity and the electron‐irradiation results indicate a very short carrier lifetime in these films.

Waveguide TEA laser

P. W. Smith, P. J. Maloney, and O. R. Wood

Appl. Phys. Lett. 23, 524 (1973); http://dx.doi.org/10.1063/1.1654984 (3 pages) | Cited 20 times

Online Publication Date: 9 October 2003

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We describe a miniature transverse‐excitation CO2 laser in which the 10.6‐μm laser radiation is confined within a hollow rectangular‐cross‐section dielectric and metal waveguide. Using a flowing mixture of CO2, N2, and He we have obtained laser action at pressures up to 1 atm, and pulse repetition rates as high as 4 kHz.

Enhancement of photoelectron density in TEA lasers using additives

H.J.J. Seguin, J. Tulip, and D. McKen

Appl. Phys. Lett. 23, 527 (1973); http://dx.doi.org/10.1063/1.1654985 (3 pages) | Cited 12 times

Online Publication Date: 9 October 2003

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The photoplasma produced in laser gases by a spark uv source is measured using a microwave bridge. The results show that an increase in plasma density of four orders of magnitude is obtained using trace amounts of low‐ionization‐threshold additives in the gas mix. The technique has been shown to enhance laser performance. An output energy density of 60 J∕liter has been obtained from such a photoionized TEA laser.
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Erratum: Momentum transfer to laser irradiated targets

Heinrich Hora

Appl. Phys. Lett. 23, 530 (1973); http://dx.doi.org/10.1063/1.1654986 (1 page)

Online Publication Date: 9 October 2003

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