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1 Jan 1974

Volume 24, Issue 1, pp. iv-44

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EDITORIAL: Change of Editors

Gilbert J. Perlow

Appl. Phys. Lett. 24, iv (1974); http://dx.doi.org/10.1063/1.1655005 ( pages)

Online Publication Date: 9 October 2003

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Abstract Unavailable

Surface enrichment of In in evaporated Au☒In films

Simon Thomas

Appl. Phys. Lett. 24, 1 (1974); http://dx.doi.org/10.1063/1.1654987 (3 pages) | Cited 14 times

Online Publication Date: 9 October 2003

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The surface composition of evaporated Au(98%)☒In(2%) alloy films has been investigated by Auger electron spectroscopy. Sputter etching showed the surface concentration to be markedly different from the bulk concentration. The In concentration on a freshly sputter‐etched surface increases with time and reaches an equilibrium value of [inverted lazy s] 15 at.%, at room temperature. This In‐enriched surface is believed to have the thermodynamically stable composition.

Interpretation of channeling effect measurements of disorder in ion‐implanted silicon

F. H. Eisen and J. Bøttiger

Appl. Phys. Lett. 24, 3 (1974); http://dx.doi.org/10.1063/1.1654996 (3 pages) | Cited 4 times

Online Publication Date: 9 October 2003

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A new method of applying channeling to determine the number of displaced atoms in an ion‐implanted silicon sample is described. The technique utilizes measurements of the transmission energy spectra of channeled protons scattered 10° from the incident beam direction as they penetrate through thin ([inverted lazy s] 1 μm) silicon crystals to discriminate between ``true'' interstitial atoms and atoms only slightly off lattice sites due to strain. A comparison of this technique with the standard channeling effect technique, using backscattering, indicates that the channeling‐backscattering technique is sensitive mainly to such ``true'' interstitial atoms.

Explanation of laser‐damage cone‐shaped surface pits

C. J. Duthler

Appl. Phys. Lett. 24, 5 (1974); http://dx.doi.org/10.1063/1.1655003 (3 pages) | Cited 5 times

Online Publication Date: 9 October 2003

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An anisotropic quasistatic stress distribution is found in the material surrounding an absorbing inclusion of a radius a centered a distance d below the surface of a transparent host. Maximum tensile stress greater than the pressure at the inclusion‐host interface occurs at the angle Θm = cos−1(a∕d) from the line joining the inclusion center to the surface, resulting in cone‐shaped fracture.

Schottky barrier InxGa1−xAs alloy avalanche photodiodes for 1.06 μm

G. E. Stillman, C. M. Wolfe, A. G. Foyt, and W. T. Lindley

Appl. Phys. Lett. 24, 8 (1974); http://dx.doi.org/10.1063/1.1655004 (3 pages) | Cited 29 times

Online Publication Date: 9 October 2003

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Uniform Schottky barrier avalanche photodiodes with gains greater than 250, rise times less than 200 psec, and good quantum efficiencies at 1.06 μm have been fabricated in InxGa1−xAs alloys. The material used for these devices was grown epitaxially on GaAs substrates using an AsCl3☒H2☒Ga☒In vapor‐phase system which permitted grading the epitaxial layers from GsAs to the desired composition.

Laser emission at 1.065 μm from neodymium‐doped anhydrous cerium trichloride at room temperature

S. Singh, L. G. Van Uitert, J. R. Potopowicz, and W. H. Grodkiewicz

Appl. Phys. Lett. 24, 10 (1974); http://dx.doi.org/10.1063/1.1654988 (4 pages) | Cited 6 times

Online Publication Date: 9 October 2003

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Room‐temperature laser action is reported in Nd3+ : CeCl3. The observed threshold was 0.06 J compared to 0.13 J for Nd3+ : YAG. Stronger pump bands and higher laser transition cross sections of neodymium‐doped anhydrous trichlorides of cerium and lanthanum render these materials superior to Nd3+ : YAG for miniaturized and thin‐film laser applications.

Optically stimulated x‐ray laser

Isaac Freund

Appl. Phys. Lett. 24, 13 (1974); http://dx.doi.org/10.1063/1.1654989 (3 pages) | Cited 2 times

Online Publication Date: 9 October 2003

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See Also: Erratum

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X‐ray emission from the 2s → 1s transition in hydrogenic ions stimulated by an optical laser is proposed as a means of achieving lasing action in the x‐ray region. A net gain of 0.27 cm−1 is calculated for the 18.97‐Å 2s → 1s transition of O+7 at an inverted population density of 1015 ions∕cm3 in the presence of a Nd laser field of 5 × 108 W∕cm2.

Possible population inversions for VUV and soft x‐ray transitions in hydrogenlike ions

Willy L. Bohn

Appl. Phys. Lett. 24, 15 (1974); http://dx.doi.org/10.1063/1.1654990 (3 pages) | Cited 32 times

Online Publication Date: 9 October 2003

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Population inversions for optical transitions in the VUV and soft x‐ray spectral region are predicted theoretically for decaying plasmas. The calculations are based upon a quasisteady‐state theory for hydrogenlike ions. In contrast to other approaches it is shown that the characteristic relaxation time to generate inversions is not that of the corresponding upper levels but that of the ground state of the ions, i.e., the relaxation time for recombination. A plasmadynamic laser system for cw operation in the VUV is proposed.

Degradation mechanism of (Al ⋅ Ga)As double‐heterostructure laser diodes

H. Yonezu, I. Sakuma, T. Kamejima, M. Ueno, K. Nishida, Y. Nannichi, and I. Hayashi

Appl. Phys. Lett. 24, 18 (1974); http://dx.doi.org/10.1063/1.1654991 (2 pages) | Cited 47 times

Online Publication Date: 9 October 2003

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This paper reports new observations in degraded (Al ⋅ Ga)As double‐heterostructure (DH) laser diodes and proposes a mechanism of short‐term ([inverted lazy s] 100 h) degradation characteristic to DH structures. Degradation is seen localized as ``dark lines'' of certain crystalline orientations in electroluminescent patterns, as well as junction current patterns using an SEM. X‐ray measurement showed internal strain due to heteromismatch. It is suggested that the internal stress accelerates development of the dark lines, which is likely to be a crystalline defect caused by thermal stresses.

Optical intensity modulator with waveguide structure

S. Uehara, Y. Yamauchi, and T. Izawa

Appl. Phys. Lett. 24, 19 (1974); http://dx.doi.org/10.1063/1.1654992 (3 pages) | Cited 5 times

Online Publication Date: 9 October 2003

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A low‐driving‐voltage optical modulator with the configuration of an optical waveguide has been fabricated. A LiTaO3 single crystal with a thickness of 40 μm was used as the core and was cladded with a thin film of CeO2 formed by evaporation. The extinction ratio was better than 2%.

Frequency‐selective beam coupler for integrated optics

R. Ulrich

Appl. Phys. Lett. 24, 21 (1974); http://dx.doi.org/10.1063/1.1654993 (4 pages) | Cited 3 times

Online Publication Date: 9 October 2003

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A second tunnel layer and an interference layer are added to a prism‐film coupler. The resulting frequency response of the leak rate is given by the Airy formula for an interference filter. Strong coupling exists in the passband, whereas for stopband frequencies the guide and prism are decoupled. Experimentally, a bandwidth of 300 cm−1 in the visible is demonstrated. The underlying principle is also applicable to periodic couplers.

Coincidence of Er:YAG laser emission with methane absorption at 6077 cm−1

Kenneth Fox

Appl. Phys. Lett. 24, 24 (1974); http://dx.doi.org/10.1063/1.1654994 (3 pages) | Cited 8 times

Online Publication Date: 9 October 2003

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This spectroscopic coincidence is considered from the viewpoint of experiments to measure tetrahedral parameters applicable to extensive calculations of atmospheric spectra. Theoretical results related to the polar character of the ground and excited vibrational states are discussed. Numerical values for ground‐state transition frequencies, and estimates for ground‐ and excited‐state Stark shifts, are given for the R (6) multiplet in 2ν3 of 12CH4. Possible applications are mentioned for 13CH4.

Effects of oxygen‐reduction treatments on the threshold voltage and low‐frequency noise of MOS transistors

F. H. Hielscher and J. H. End

Appl. Phys. Lett. 24, 27 (1974); http://dx.doi.org/10.1063/1.1654995 (3 pages)

Online Publication Date: 9 October 2003

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A controlled series of MOS transistors have been studied to determine the effects of low‐oxygen‐partial‐pressure atmospheres, resulting from high‐temperature anneals in CO☒CO2 gas mixtures, on the oxide charges and surface‐state densities of the silicon‐dioxide gates of MOS transistors, by measurements of threshold voltages and low‐frequency 1∕f noise. The results indicate that both the threshold voltage and the 1∕f noise increase as the result of the reducing treatment, with noise increasing by more than two orders of magnitude. Partial reoxidation of reduced SiO2 decreased the threshold voltage, but did not decrease the noise level.

Effect of oxygen on magnetization reversal of rare‐earth‐Co5 particles

Clark W. Searle

Appl. Phys. Lett. 24, 30 (1974); http://dx.doi.org/10.1063/1.1654997 (3 pages) | Cited 9 times

Online Publication Date: 9 October 2003

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The nucleation field for rare‐earth‐Co5 particles is shown to be directly related to variations in the domain wall energy associated with an oxide layer at the particle's surface. A physical model based on the experimental results for Nd1−x Smx Co5 single crystals can quantitatively describe the magnetization reversal.

Bistable magnetic bubbles: Conditions leading to stability in liquid‐phase epitaxial garnet films

T. R. Oeffinger, G. W. Roland, A. I. Braginski, and R. W. Patterson

Appl. Phys. Lett. 24, 32 (1974); http://dx.doi.org/10.1063/1.1654998 (3 pages)

Online Publication Date: 9 October 2003

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An abrupt hysteretic change in bubble size as a function of bias field has been observed in garnet films grown by chemical vapor deposition (CVD). Similar bistable bubbles and their associated transformations have now been observed in double‐layer films grown by liquid‐phase epitaxy (LPE). A slight compositional variation from layer to layer was introduced. Single‐layer LPE films similar to CVD films reported earlier did not display these bistable bubbles. Compositional variations are postulated as the cause of the bistable bubbles, rather than strain variation as previously suggested.

Current‐carrying capacities of superconducting multifilamentary V3Ga cables

Y. Furuto, T. Suzuki, K. Tachikawa, and Y. Iwasa

Appl. Phys. Lett. 24, 34 (1974); http://dx.doi.org/10.1063/1.1654999 (3 pages) | Cited 13 times

Online Publication Date: 9 October 2003

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Current‐carrying capacities at 4.2 K of superconducting multifilamentary V3Ga cables have been measured in transverse magnetic fields up to 20.8 T. The performance of the cables does not appear to be affected by bending as long as bending diameters are greater than 20 mm.

Thermal stability of a proposed magnetic bubble metallurgy

J. F. Ziegler, J. E. E. Baglin, and A. Gangulee

Appl. Phys. Lett. 24, 36 (1974); http://dx.doi.org/10.1063/1.1655000 (4 pages) | Cited 9 times

Online Publication Date: 9 October 2003

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It has been proposed that Permalloy (Ni0.8Fe0.2) can be used as thin‐film magnetic bubble generator and sensor, and Au is a proposed electrical connector for input∕output. We find that significant interdiffusion occurs to levels of 1–10 at.% for the diffusion couples Ni∕Au, Fe∕Au, and Permalloy∕Au. We have determined 350°C solubility levels for all pairs for 1100‐Å films for annealing times from 10 to 2400 min. There was no degradation of electrical or magnetic properties of the Permalloy∕Au system even at the highest levels of interdiffusion, indicating that it is ideally suited for a magnetic bubble metallurgy.

A spiral loaded low‐β accelerating structure

G. J. Dick and Kenneth W. Shepard

Appl. Phys. Lett. 24, 40 (1974); http://dx.doi.org/10.1063/1.1655001 (3 pages) | Cited 2 times

Online Publication Date: 9 October 2003

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This letter describes a new accelerating structure for a heavy‐particle linear accelerator: a quarter‐wavelength spiral loaded radio‐frequency resonator. Experiments and preliminary analysis of this structure indicate that its performance as an accelerating structure is considerably superior to the helically loaded resonator in such important areas as surface electric field level, mechanical stability, and shunt impedance. As a superconducting device, a superconductiong lead‐plated copper spiral resonator of phase velocity β = 0.045 has been run continuously at an accelerating field level of 1.46 MV∕m with little degradation in Q below the low‐field level. Measured properties of superconducting niobium imply that a niobium resonator of this type could reach accelerating fields in excess of 4 MV∕m before reaching breakdown conditions.

Retrieval of electron‐excited Auger structure by dynamic background subtraction

J. E. Houston

Appl. Phys. Lett. 24, 42 (1974); http://dx.doi.org/10.1063/1.1655002 (3 pages) | Cited 13 times

Online Publication Date: 9 October 2003

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Electron‐excited Auger electron spectroscopy normally relies on differentiation of the electron energy spectrum to enhance signal contrast. The contrast is increased, however, only at the expense of signal strength and the Auger structure itself is not recovered. Dynamic background subtraction, which involves multiple differentiation followed by integration of the same order, is shown to rectify these difficulties.
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