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15 May 1974

Volume 24, Issue 10, pp. 451-525

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Polarity‐dependent electro‐optical effect of nematic liquid crystals

W. Helfrich

Appl. Phys. Lett. 24, 451 (1974); http://dx.doi.org/10.1063/1.1655006 (2 pages) | Cited 19 times

Online Publication Date: 9 October 2003

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A new type of flexoelectric realignment is predicted which has a threshold voltage and occurs for only one polarity. It requires the anchoring of the alignment to be of different strength on the two electrodes.
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Comments on ``Effect of charge‐transfer acceptors on dynamic scattering in a nematic liquid crystal''

F. Gaspard and R. Herino

Appl. Phys. Lett. 24, 452 (1974); http://dx.doi.org/10.1063/1.1655007 (1 page) | Cited 2 times

Online Publication Date: 9 October 2003

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Two recent papers describing the effects of charge‐transfer acceptors on the electro‐optical properties of a nematic liquid crystal are discussed on the basis of electrochemical considerations. A new interpretation is suggested which is consistent with the experimental facts.

Liquid‐crystal optical activity for temperature sensing

C. W. Smith, D. G. Gisser, M. Young, and S. R. Powers

Appl. Phys. Lett. 24, 453 (1974); http://dx.doi.org/10.1063/1.1655008 (2 pages) | Cited 4 times

Online Publication Date: 9 October 2003

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In this letter, we report a novel temperature‐sensing device based on the optical rotatory power of cholesteric liquid‐crystal films. The transducer is small and compact, compatible with lasers and fiber optics, and capable of resolving temperature differences of 0.02 °C or better. It is simpler and more precise than most liquid‐crystal techniques and does not pose the hazard that may be posed by electrical temperature sensors in certain applications. Dilute solutions of cholesteric liquid crystals in nematic solvents exhibit highly temperature‐dependent optical rotation near the isotropic phase transition temperature. We place these solutions between crossed polarizers and measure the temperature by monitoring the transmission accurately. Using a laser source, we have installed a device of this nature at the end of a bundle of fibers with encouraging results.

Effect of deuteration on the ferroelectric transition temperature and the distribution coefficient of deuterium in K(H1−xDx)2PO4

G. M. Loiacono, J. F. Balascio, and W. Osborne

Appl. Phys. Lett. 24, 455 (1974); http://dx.doi.org/10.1063/1.1655009 (2 pages) | Cited 39 times

Online Publication Date: 9 October 2003

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The variation in the ferroelectric transition temperature with deuteration is described by a linear function only if the deuteration level in the crystal is considered. A least‐squares fit of these data resulted in the relation Tc=121.7K + 1.07m, with m in mole% D. The effective distribution coefficient (keff) of deuterium in the system KH2PO4☒KD2PO4☒D2O was found to vary from 0.75 to 0.99 over the range of 25–99.8 mole% D.

Effects of poling conditions on responsivity and uniformity of polarization of PVF2 pyroelectric detectors

G. W. Day, C. A. Hamilton, R. L. Peterson, R. J. Phelan, and L. O. Mullen

Appl. Phys. Lett. 24, 456 (1974); http://dx.doi.org/10.1063/1.1655010 (3 pages) | Cited 39 times

Online Publication Date: 9 October 2003

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A large number of pyroelectric detectors, fabricated from commercially available PVF2 and poled under a variety of conditions of voltage, temperature, and time have been evaluated for responsivity and uniformity of polarization in the direction of the poling field. Results show that uniformity of polarization (a requirement for flat frequency response) can be achieved and responsivities as high as 2.9 μA∕W can be obtained.

Trap ionization by electron impact in amorphous SiO2 films

D. J. DiMaria, F. J. Feigl, and S. R. Butler

Appl. Phys. Lett. 24, 459 (1974); http://dx.doi.org/10.1063/1.1655011 (3 pages) | Cited 15 times

Online Publication Date: 9 October 2003

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Electron impact ionization rates for an impurity‐related electron trapping center in amorphous SiO2 films have been determined. These rates were obtained from analyses of trap population kinetics during uv‐stimulated photocurrent injection. The dependence of the impact ionization rate αN on accelerating electric field E has been parameterized: αN = 25 exp(−1.5∕E) cm−1, for E in MV∕cm. This expression is the statistical average of results from three MOS specimens with a mean volume‐averaged trapping state density N ≈5×1013 cm−3.

Effect of water and paint coatings on laser‐irradiated targets

Jay A. Fox

Appl. Phys. Lett. 24, 461 (1974); http://dx.doi.org/10.1063/1.1655012 (4 pages) | Cited 37 times

Online Publication Date: 9 October 2003

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Plexiglas and metal targets were illuminated in atmospheric air with a Q‐switched neodymium : glass laser. Augmentation of the laser‐induced stress waves was achieved with paint and water coatings. The spallation of Plexiglas and lead was observed. Measurements of the stress‐time histories were taken with quartz stress gauges affixed to the rear surface of aluminum targets.

Measured radiation effects in MOS capacitors with a proposed new model

F. E. Holmstrom, T. W. Collins, and J. N. Churchill

Appl. Phys. Lett. 24, 464 (1974); http://dx.doi.org/10.1063/1.1655013 (3 pages) | Cited 1 time

Online Publication Date: 9 October 2003

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Flat‐band shift measurements were made on p‐type MOS devices irradiated with electrons at various gate bias voltages. A reproducible curve of flat‐band shift versus gate bias was obtained that could not be readily accounted for with existing models. Data were taken over a wide range of negative and positive gate bias voltages. The model assumes that traps obey Fermi‐Dirac statistics, subject to interface boundary constraints. A linearized quasi‐Fermi level is assumed in the oxide. The resulting distribution of charged traps yields a self‐consistent energy band structure throughout the entire device.

Liquid phase epitaxy of GaAlAs on GaAs substrates with fine surface corrugations

M. Nakamura, K. Aiki, J. Umeda, A. Yariv, H. W. Yen, and T. Morikawa

Appl. Phys. Lett. 24, 466 (1974); http://dx.doi.org/10.1063/1.1655014 (3 pages) | Cited 7 times

Online Publication Date: 9 October 2003

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Liquid phase epitaxy of GaAlAs was performed on GaAs fine surface corrugations. By optimizing the growth conditions, GaAlAs layers were grown successfully with only minimal meltback.

Pulse compression for more efficient operation of solid‐state laser amplifier chains

Robert A. Fisher and W. K. Bischel

Appl. Phys. Lett. 24, 468 (1974); http://dx.doi.org/10.1063/1.1655015 (3 pages) | Cited 6 times

Online Publication Date: 9 October 2003

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We propose a pulse compression scheme which reduces the peak intensity while increasing the energy density achievable in a Nd:glass amplifier chain. Self‐focusing is the dominant effect responsible for limiting the power of a short‐pulse Nd:glass amplifier chain, and the reduction of the intensity (through this compression scheme) greatly reduces these problems. We recommend injecting a lower‐intensity and longer‐duration pulse into the chain. Under some circumstances, the glass nonlinearity will impress upon the pulse a chirp suitable for efficient subsequent temporal compression, and this may result in higher effective peak power operation. If a 1‐nsec (full 1∕e duration) temporally Gaussian pulse with a chain‐averaged peak intensity of 2 GW∕cm2 propagates 2 m in a Nd:glass laser chain, we calculate that the pulse could be subsequently compressed (by a series of Gires‐Tournois interferometers) to 125 psec with good stability against input pulse amplitude noise. Such short pulses are of major interest for laser fusion.

Unequal electron and hole impact ionization coefficients in GaAs

G. E. Stillman, C. M. Wolfe, J. A. Rossi, and A. G. Foyt

Appl. Phys. Lett. 24, 471 (1974); http://dx.doi.org/10.1063/1.1655016 (4 pages) | Cited 28 times

Online Publication Date: 9 October 2003

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GaAs Schottky barrier avalanche photodiodes have been fabricated in which it is possible to achieve nearly pure hole and pure electron injection in the same device. Measurements of the multiplication characteristics of these devices show that the ionization coefficients of electrons (α) and holes (β) are not equal and that β>α. This result is in agreement with the variation of multiplication with bias voltage at different wavelengths observed for standard GaAs Schottky barrier diodes but contrary to the generally accepted belief that α=β.

Threshold condition for thin‐film distributed‐feedback lasers

Rodolfo F. Cordero and Shyh Wang

Appl. Phys. Lett. 24, 474 (1974); http://dx.doi.org/10.1063/1.1655017 (3 pages) | Cited 9 times

Online Publication Date: 9 October 2003

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An exact solution to wave propagation in thin‐film periodic structures using Bloch waves is presented and from it the threshold condition for distributed‐feedback DFB lasers is derived. The form of the latter is identical to the oscillation condition of cavity lasers but with the appropriate reflection coefficients and propagation constant for Bloch waves substituted. We find that for laser action Bragg scattering alone is not sufficient but structural changes at both ends of the structure are necessary in order to produce appreciable reflection of the Bloch waves. Suggestions on how to achieve these reflections are given.

Stimulated emission from charge‐transfer reactions in the afterglow of an e‐beam discharge into high‐pressure helium‐nitrogen mixtures

C. B. Collins, A. J. Cunningham, S. M. Curry, B. W. Johnson, and M. Stockton

Appl. Phys. Lett. 24, 477 (1974); http://dx.doi.org/10.1063/1.1655018 (2 pages) | Cited 31 times

Online Publication Date: 9 October 2003

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Stimulated emission from the B2Σu+ state of N2+ has been observed as a consequence of the charge‐transfer reaction between He2+ and N2 in the afterglow of a pulsed gigawatt electron beam discharge into 3 atm of helium containing 0.8 Torr nitrogen. Peak gains of the order of 0.05 cm−1 were found for the (0,1) vibrational component of the B 2Σu+→X 2Σg+ transition at 4278 Å by directly measuring the time‐resolved gain spectrum with a tunable dye laser. Correspondingly smaller gains were found for the (0,2) and (0,3) transitions of the same system at 4709 and 5228 Å, respectively.

Polarity‐dependent memory switching in devices with SnSe and SnSe2 crystals

Dongwoo Chun, R. M. Walser, R. W. Bené, and T. H. Courtney

Appl. Phys. Lett. 24, 479 (1974); http://dx.doi.org/10.1063/1.1655019 (3 pages) | Cited 17 times

Online Publication Date: 9 October 2003

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Polarity‐dependent memory switching has been observed in devices of crystalline SnSe and SnSe2 with aluminum contacts. Two types of low‐level switching (1 V∕1 mA) with reversed polarity dependence can be obtained in suitably formed devices of either material. In addition, a high‐level (100 V∕10 mA) polarized memory switching can be obtained in either device. The low‐level switching appears to involve an electronic process, while the high‐level switching is associated with an electrothermally driven mass transport.

Threshold reduction by the addition of phosphorus to the ternary layers of double‐heterostructure GaAs lasers

J. C. Dyment, F. R. Nash, C. J. Hwang, G. A. Rozgonyi, R. L. Hartman, H. M. Marcos, and S. E. Haszko

Appl. Phys. Lett. 24, 481 (1974); http://dx.doi.org/10.1063/1.1655020 (4 pages) | Cited 35 times

Online Publication Date: 9 October 2003

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By the addition of phosphorus to the ternary layers of standard double‐heterostructure GaAs injection lasers, significant reductions in lasing current threshold and increases in differential quantum efficiency have been obtained. Additional measurements suggest that the improvements are connected with a reduction in optical scattering loss.

PbxSn1‐xTe epitaxial layers by rf multicathode sputtering

C. Corsi, I. Alfieri, and G. Petrocco

Appl. Phys. Lett. 24, 484 (1974); http://dx.doi.org/10.1063/1.1655021 (2 pages) | Cited 2 times

Online Publication Date: 9 October 2003

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Epitaxial single‐crystal PbxSn1‐xTe films with carrier concentration and mobility values close to bulk sinle crystals have been obtained by sputtering on BaF2, NaCl, and (111) Ge substrates.

Current dependence of spontaneous carrier lifetimes in GaAs☒Ga1‐xAlx As double‐heterostructure lasers

H. Namizaki, H. Kan, M. Ishii, and A. Ito

Appl. Phys. Lett. 24, 486 (1974); http://dx.doi.org/10.1063/1.1655022 (2 pages) | Cited 18 times

Online Publication Date: 9 October 2003

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The spontaneous lifetime of injected carriers in GaAs☒Ga1‐xAlx As double‐heterostructure lasers is examined in relation to the current injection levels. It is shown that the spontaneous lifetime at threshold is proportional to Jth−1/2 in lasers with a 2×1017∕cm3 Si‐doped active region. From the proportionality constant the effective recombination constant Beff is estimated to be 9.0×10−11 cm3∕sec, which agrees quite well with the theoretical value for band‐to‐band transitions.

126.1‐nm molecular argon laser

William M. Hughes, John Shannon, and Robert Hunter

Appl. Phys. Lett. 24, 488 (1974); http://dx.doi.org/10.1063/1.1655023 (3 pages) | Cited 45 times

Online Publication Date: 9 October 2003

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Electron beam excitation of high‐pressure argon has resulted in the first demonstration of laser action from molecular argon at 126.1±0.3 nm. Strong laser action was achieved at pressures up to 6.89 MPa (1000 psia).

Optical waveguides of single‐crystal LiNbO3 film deposited by rf sputtering

S. Takada, M. Ohnishi, H. Hayakawa, and N. Mikoshiba

Appl. Phys. Lett. 24, 490 (1974); http://dx.doi.org/10.1063/1.1655024 (3 pages) | Cited 43 times

Online Publication Date: 9 October 2003

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A successful attempt in feeding a laser beam into a single‐crystal LiNbO3 film deposited on a sapphire substrate by rf sputtering is described. The film thickness was 1800 Å. The loss of the film was less than 9 dB∕cm at 6328 Å. The ordinary and extraordinary refractive indices of the film were no = 2.32±0.02 and ne = 2.18±0.04, respectively.

Recombination without k‐selection rules in dense electron‐hole plasmas in high‐purity GaAs lasers

G. Göbel

Appl. Phys. Lett. 24, 492 (1974); http://dx.doi.org/10.1063/1.1655025 (3 pages) | Cited 35 times

Online Publication Date: 9 October 2003

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The low‐temperature emission spectra of high‐purity GaAs exhibit an intense new emission line at high optical pumping levels, which is due to band‐to‐band recombination within an electron‐hole plasma. The experimentally determined gain spectra of this laser transition are fitted to calculated line‐shape curves, which shows that the recombination takes place without k‐selection rules.

Macroscopic deterioration of fluorescence from AlxGa1−xAs☒GaAs DH material following microscopic physical damage

W. D. Johnston

Appl. Phys. Lett. 24, 494 (1974); http://dx.doi.org/10.1063/1.1655026 (3 pages) | Cited 15 times

Online Publication Date: 9 October 2003

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The ``large dark spot'' (LDS) defect in AlxGa1−xAs☒GaAs double‐heterostructure (DH) laser material is identified as arising from elastic strain associated with microscopic physical damage. LDS are typically 100–200 μ wide as compared to submicron dimensions for the causative damage.

Nonequilibrium phenomena in ion‐implanted MOS capacitors

Josef Berger

Appl. Phys. Lett. 24, 497 (1974); http://dx.doi.org/10.1063/1.1655027 (3 pages)

Online Publication Date: 9 October 2003

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A new type of nonequilibrium capacitance‐voltage characteristic was observed in a particular class of ion‐implanted MOS capacitors. A model explaining these characteristics is proposed and a method to use them for evaluation of the implanted layers is suggested.

Manganese laser using manganese chloride as lasant

Che Jen Chen

Appl. Phys. Lett. 24, 499 (1974); http://dx.doi.org/10.1063/1.1655028 (2 pages) | Cited 12 times

Online Publication Date: 9 October 2003

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A manganese vapor laser utilizing manganese chloride as a lasant has been observed and investigated. Lasing is attained by means of two consecutive electrical discharges. The maximum laser output is obtained at a vapor pressure of about 3 Torr, a temperature of 680°C, and a time delay between electrical discharges of 150 μsec. The maximum energy density is 1.3 μJ cm−3.

Surface depletion region width dependence of threshold voltage shift of ion‐implanted MOS transistor

Mototaka Kamoshida and Osamu Kudoh

Appl. Phys. Lett. 24, 501 (1974); http://dx.doi.org/10.1063/1.1655029 (3 pages) | Cited 3 times

Online Publication Date: 9 October 2003

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See Also: Erratum

Show Abstract
Even under the same implantation conditions, e.g., 50‐keV 11B+ ions implanted through 1100‐Å gate oxides on 4‐Ω cm silicon substrates, the threshold voltage shift of n ‐channel MOS transistors is ∼55% of the shift of p ‐channel specimens, and deviation from linear dose dependence is observed for the n channel above a dose of 6×1011∕cm2, while for a p ‐channel case the threshold voltage shift depends linearly on the net dose in silicon at least up to 1×1012∕cm2. These results are discussed and explained with a calculated dose dependence that accounts for the large decrease of the maximum width of the depletion layer with increasing dose for acceptor‐implanted n ‐channel specimens.

Optical waveguide modes in single‐crystalline LiNbO3☒LiTaO3 solid‐solution films

P. K. Tien, S. Riva‐Sanseverino, R. J. Martin, A. A. Ballman, and H. Brown

Appl. Phys. Lett. 24, 503 (1974); http://dx.doi.org/10.1063/1.1655030 (4 pages) | Cited 51 times

Online Publication Date: 9 October 2003

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We report new LiNbO3☒LiTaO3 solid‐solution films which form excellent active optical waveguides. Measurement of the waveguide modes indicates that these films have a graded composition. To analyze these waveguides, we present a theory for the calculation of the mode indices and find that the refractive index varies with the depth in the film, according to a Fermi function.
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