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1 Jun 1974

Volume 24, Issue 11, pp. 529-577


Transient laser phenomena in nematic liquid crystals subject to ac electric fields

W. S. Quon and E. Wiener‐Avnear

Appl. Phys. Lett. 24, 529 (1974); http://dx.doi.org/10.1063/1.1655040 (3 pages) | Cited 2 times

Online Publication Date: 9 October 2003

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A laser‐induced orientation of the directions in a thin film of nematic liquid crystal subject to a low‐frequency ac electric field has been observed. This phenomenon occurs at applied voltages just below the threhold voltage for Williams domain formation in the absence of the laser beam, and it manifests itself in the form of a very slow transient rise time for the appearance of the far‐field diffraction pattern.

Nonlinear interactions in guided Rayleigh waves

Gérard Coussot

Appl. Phys. Lett. 24, 531 (1974); http://dx.doi.org/10.1063/1.1655041 (3 pages) | Cited 2 times

Online Publication Date: 9 October 2003

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The phase‐matching condition for the second‐harmonic generation of Rayleigh waves in a metallic guide structure on a piezoelectric substrate is determined. Experiments on a Y☒Z LiNbO3 guide are investigated. The mode characteristics and the generation of the second harmonic are measured. An enhancement of the second‐harmonic intensity is pointed out in the guide structure as compared with a free surface.
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Yielding and grain‐boundary ledges: Some comments on the Hall‐Petch relation

L. E. Murr

Appl. Phys. Lett. 24, 533 (1974); http://dx.doi.org/10.1063/1.1655042 (4 pages) | Cited 6 times

Online Publication Date: 9 October 2003

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Direct observations of grain‐boundary ledges have been made in a number of metals and alloys by transmission electron microscopy. Grain‐boundary ledges have been observed to be sources of dislocations, and emitted dislocations take on the appearance of pileups. It is suggested that, because of the dearth of observations of dislocation pileups, the pileup concept be reconsidered in the flow‐stress‐grain‐size relationship, and conversely that serious consideration be given to the role of grain‐boundary structure, particularly ledges, in determining the mechanical properties of metals and alloys.

Structure of LiH to 12 GPa

Bart Olinger and P. M. Halleck

Appl. Phys. Lett. 24, 536 (1974); http://dx.doi.org/10.1063/1.1655043 (2 pages) | Cited 6 times

Online Publication Date: 9 October 2003

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X‐ray diffraction patterns at high pressure show that LiH retains the low‐pressure NaCl structure to 12.0 GPa.

Laser oscillation in simple corrugated optical waveguide

Yoshinobu Aoyagi and Susumu Namba

Appl. Phys. Lett. 24, 537 (1974); http://dx.doi.org/10.1063/1.1655044 (3 pages) | Cited 7 times

Online Publication Date: 9 October 2003

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The gain characteristics in a simple corrugated optical waveguide dye laser of Rhodamine 6G were observed. A new tuning method of lasing the wavelength of a DFB structure was examined.

Proton‐induced characteristic x‐ray analysis of Na and Cl impurity atoms in SiO2 thin films

Wendland Beezhold

Appl. Phys. Lett. 24, 540 (1974); http://dx.doi.org/10.1063/1.1655045 (3 pages) | Cited 1 time

Online Publication Date: 9 October 2003

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Analysis of SiO2:Si and Au:SiO2:Si thin‐film systems using proton‐induced characteristic x rays (PIX) indicates that small quantities (≥1014∕cm2) of Na and Cl atoms may be detected in SiO2 films even in the presence of strong O(K), Si(K), and∕or Au(M) x‐ray outputs. Distributions of implanted Na and contaminant Cl atoms were found to be stable during PIX analysis and for very high proton fluences. In contrast, heavy‐ion Ne+ bombardment caused movement of Na and Cl within the oxide. Finally, PIX analysis of 50‐keV Ar+ sputtering in Au:SiO2:Si shows that sputter profiling is complicated by strong ion‐beam‐induced intermixing of Au with SiO2 and of Au with Si.

Analytic solution of kinetic rate equations for HF chemical laser

A. M. Hunter

Appl. Phys. Lett. 24, 543 (1974); http://dx.doi.org/10.1063/1.1655046 (3 pages)

Online Publication Date: 9 October 2003

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The species rate equations corresponding to the F+H2 chemical reaction have been solved analytically to obtain the populations of the individual HF vibrational levels. The solution of each vibrational level contains terms representing direct chemical pumping, cascading from all higher levels, and deactivation. Analytic and numerical solutions for the specie densities and the corresponding small‐signal gains are in excellent agreement for well‐diluted gas mixtures.

Low‐loss single‐mode optical waveguides and efficient high‐speed modulators of LiNbxTa1−xO3 on LiTaO3

J. M. Hammer and W. Phillips

Appl. Phys. Lett. 24, 545 (1974); http://dx.doi.org/10.1063/1.1655047 (3 pages) | Cited 68 times

Online Publication Date: 9 October 2003

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Low‐loss LiNbxTa1−xO3 optical waveguides have been made by a simple diffusion technique. They are used to demonstrate over 80% base band electro‐optic modulation with frequency capabilities extending to the microwave range. Voltages below 5 V and drive powers below 2∕10 mW∕MHz are required.

Two‐layered construction of integrated optical circuits and formation of thin‐film prisms, lenses, and reflectors

P. K. Tien, S. Riva‐Sanseverino, R. J. Martin, and G. Smolinsky

Appl. Phys. Lett. 24, 547 (1974); http://dx.doi.org/10.1063/1.1655048 (3 pages) | Cited 17 times

Online Publication Date: 9 October 2003

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We have demonstrated a new form of a two‐layered construction of optical circuits. In this method, thin‐film optical devices are covered by a single continuous layer of light‐guiding film which serves as the interconnections as well as the input and output terminals. We also have demonstrated the construction of thin‐film prisms, lenses, and a novel corner reflector in this type of structure.

Calibrated remote measurement of NO2 using the differential‐absorption backscatter technique

W. B. Grant, R. D. Hake, E. M. Liston, R. C. Robbins, and E. K. Proctor

Appl. Phys. Lett. 24, 550 (1974); http://dx.doi.org/10.1063/1.1655049 (3 pages) | Cited 26 times

Online Publication Date: 9 October 2003

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A tunable dye laser, operating between 4400 and 4500 Å, was used to monitor NO2 concentrations in a sample chamber 365 m away. The atmosphere in front of and behind the chamber acted as a distributed reflector to send laser light back through the chamber to a receiver near the laser. The laser measurements agreed well with in situ measurements. A single pair of laser pulses allowed the determination of NO2 concentrations with an uncertainty equivalent to 0.05 km ppm.

Integrated optical waveguide examination using anti‐Stokes fluorescence

D. B. Ostrowsky, A. M. Roy, and J. Sevin

Appl. Phys. Lett. 24, 553 (1974); http://dx.doi.org/10.1063/1.1655050 (2 pages) | Cited 8 times

Online Publication Date: 9 October 2003

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The local fields propagating in integrated optical waveguides have been examined by coating the guide with a material containing Rhodamine B. The Rhodamine absorbs a portion of 6328‐Å light propagating in the guide and emits light centered at 5950 Å via an anti‐Stokes emission process. The intensity of the anti‐Stokes emission at a given point is proportional to the local 6328‐Å intensity. Since the anti‐Stokes light is not guided, it is easily observable and has permitted the visualization of a light‐guided phenomenon which was previously unobservable in integrated optical microstructures.

Laser‐induced damage in ZnSe

D. W. Fradin and D. P. Bua

Appl. Phys. Lett. 24, 555 (1974); http://dx.doi.org/10.1063/1.1655051 (3 pages) | Cited 3 times

Online Publication Date: 9 October 2003

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Pulsed laser damage in CVD‐grown ZnSe has been studied at 1.06 and 10.6 μ. At 1.06 μ the intrinsic damage intensity was measured to be 1.2 GW∕cm2. Damage at 10.6 μ was observed to be the result of inclusion absorption with the damage intensity dependent on focused beam diameter. A statistical model of inclusion damage is developed to account for this dependence. By comparing the predictions of the model to damage intensities measured under two conditions of external focusing, the average density of potentially damaging inclusions is calculated to be about 107 cm−3.

Field‐effect conductance change in amorphous silicon

A. K. Malhotra and G. W. Neudeck

Appl. Phys. Lett. 24, 557 (1974); http://dx.doi.org/10.1063/1.1655052 (3 pages) | Cited 7 times

Online Publication Date: 9 October 2003

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The change in conductance of an amorphous silicon film due to a transverse electric field was observed. The films were electron‐beam vacuum deposited at controlled rates of less than 5 Å∕sec onto Si☒SiO2 substrates and then annealed for 4 h at 400 °C. The results indicate that the Fermi level is not pinned at near midgap and that the localized states are nearly uniform over a 0.4‐eV section above and 0.4 eV below the Fermi level near the middle of the energy gap. Calculations show the density of localized states to be 1020∕eV cm3 over this region and to be reduced as the deposition rate decreases.

Observation of field‐induced microstructure in β phase of 8∕65∕35 PLZT electro ‐ optic ceramics

C. Michel and A. Sicignano

Appl. Phys. Lett. 24, 559 (1974); http://dx.doi.org/10.1063/1.1655053 (4 pages) | Cited 15 times

Online Publication Date: 9 October 2003

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A chemical etching technique has been found which reveals a complex microstructure in the field‐induced β phase of lanthanum zirconate‐titanate electro‐optic ceramics having a composition 8∕65∕35. This microstructure in the electrically depoled state is irregular, while that in the electrically poled state is highly lamellar in character. Similar patterns were induced by mechanical strain. No evidence of microstructures was found in the thermally depoled α phase.

Excited‐state absorption spectrum of cresyl violet perchlorate

Jagdeep Shah and R. F. Leheny

Appl. Phys. Lett. 24, 562 (1974); http://dx.doi.org/10.1063/1.1655054 (3 pages) | Cited 14 times

Online Publication Date: 9 October 2003

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Measurements of excited singlet state absorption in the laser dye cresyl violet perchlorate (CVP) are described. The influence of this process on the efficiency of longitudinally pumped dye lasers can be significant and is discussed.

Characteristics of thinned backside‐illuminated charge‐coupled device imagers

S. R. Shortes, W. W. Chan, W. C. Rhines, J. B. Barton, and D. R. Collins

Appl. Phys. Lett. 24, 565 (1974); http://dx.doi.org/10.1063/1.1655055 (3 pages) | Cited 4 times

Online Publication Date: 9 October 2003

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A linear 500×1 charge‐coupled device (CCD) surface channel imager is thinned to less than 30 μm, with the thinned back surface accumulated to reduce the surface recombination velocity. Photoresponsivity is measured to be 90 mA∕W of incident wide‐band power from a 2854‐K blackbody light source. This sensitivity is a factor of 3 higher than previously reported values. Spectral responsivity reaches a peak of 90% quantum efficiency at 7000‐Å wavelength, and over 50% quantum efficiency for the spectral range from 5000 to 9000 Å. A 32% square wave amplitude response at the Nyquist limit is obtained at a location 150 resolution elements from the output diode. Optical imager resolution obtained by using the backside‐illuminated device is illustrated.

Liquid phase epitaxial growth of laser heterostructures in Pb1−xSnxTe

L. R. Tomasetta and C. G. Fonstad

Appl. Phys. Lett. 24, 567 (1974); http://dx.doi.org/10.1063/1.1655056 (4 pages) | Cited 25 times

Online Publication Date: 9 October 2003

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Pb1−xSnxTe heterostructures have been grown by liquid phase epitaxy on p‐PbTe substrates and laser diodes have been fabricated from layered structures with the following compositions: n‐PbTe (LPE)∕p‐PbTe (substrate); n‐Pb1−xSnxTe (LPE)∕p‐PbTe (substrate); and n‐PbTe (LPE)∕n‐Pb1−xSnxTe (LPE)∕p‐PbTe (substrate). Lasing in all structures occurs in the lower‐band‐gap region. Threshold currents in these lasers are comparable to those reported for conventional diffused lasers, indicating that the presence of the heterojunctions does not introduce a significant number of new nonradiative recombination centers and that efficient minority carrier injection occurs across the heterojunctions. The liquid phase epitaxy technique used in these growths is discussed.

Direct current inductance bridge for current‐quantum‐phase measurements in superconductors

R. Meservey, D. Paraskevopoulos, L. W. Gruenberg, and P. M. Tedrow

Appl. Phys. Lett. 24, 570 (1974); http://dx.doi.org/10.1063/1.1655057 (4 pages) | Cited 1 time

Online Publication Date: 9 October 2003

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A zero‐frequency inductance bridge has been constructed for measurement of the inductance of superconducting circuit elements. The null detector uses a quantum magnetometer. The bridge is balanced by resistance adjustments at room temperature and gives directly the inductance or the quantum phase difference versus the current across the unknown superconducting element. The bridge has been used to measure kinetic inductors with 4×10−7 H to one part in 104 with a measuring current of 5×10−6 A.

Suppression of hard bubbles in LPE garnet films by inert atmosphere annealing

R. C. LeCraw, E. M. Gyorgy, and R. Wolfe

Appl. Phys. Lett. 24, 573 (1974); http://dx.doi.org/10.1063/1.1655058 (2 pages) | Cited 12 times

Online Publication Date: 9 October 2003

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A new method for the suppression of hard bubbles in single‐layer LPE garnet films has been developed. The method involves annealing the films in an inert atmosphere for a few hours at temperatures near 1100 °C. The proposed mechanism involves enhanced diffusion of Ga from the substrate into the film due to oxygen vacancies produced by annealing in the inert atmosphere. The diffused Ga replaces Fe on tetrahedral sites forming a thin second layer of reduced magnetization at the film‐substrate interface. This new method may have advantages in convenience and cost over the available hard‐bubble suppression techniques.

Application of least‐squares (difference‐integration) method to cumulants analysis in intensity fluctuation spectroscopy

S. P. Lee and B. Chu

Appl. Phys. Lett. 24, 575 (1974); http://dx.doi.org/10.1063/1.1655059 (2 pages) | Cited 5 times

Online Publication Date: 9 October 2003

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A least‐squares difference‐integration method is described by which a sum or distribution of exponentials can be characterized using moments or cumulants analysis. Comparison of the higher‐order approach with the procedures of Koppel using simulated data at realistic experimental signal‐to‐noise ratios shows definite improvements in the determination of those moments.
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Erratum: Liquid‐phase epitaxial growth of (AlGa)As on polished and roughened GaP substrates for transmission photocathodes

T. G. J. van Oirschot

Appl. Phys. Lett. 24, 577 (1974); http://dx.doi.org/10.1063/1.1655060 (1 page)

Online Publication Date: 9 October 2003

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