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15 Mar 1974

Volume 24, Issue 6, pp. 251-294


Elimination of dislocations in heteroepitaxial layers by the controlled introduction of interfacial misfit dislocations

G. A. Rozgonyi, P. M. Petroff, and M. B. Panish

Appl. Phys. Lett. 24, 251 (1974); http://dx.doi.org/10.1063/1.1655171 (4 pages) | Cited 27 times

Online Publication Date: 9 October 2003

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A procedure for the elimination of dislocations in layers of GaAlAsP on GaAs substrates has been developed and is described in this report. By carefully controlling the layer thickness and the lattice parameter mismatch at the growth temperature it is possible to change the direction of substrate dislocations as they enter the substrate∕layer interface. The length of the dislocation in the interfacial plane can be extended such that it is ``infinitely'' long, i.e, it reaches the edge of the wafer.

Crystal defect mapping via impurity‐activated luminescence in gadolinium gallium garnet

W. T. Stacy, R. Metselaar, P. K. Larsen, A. Bril, and J. A. Pistorius

Appl. Phys. Lett. 24, 254 (1974); http://dx.doi.org/10.1063/1.1655172 (3 pages) | Cited 5 times

Online Publication Date: 9 October 2003

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Faceting and growth striations have been revealed by the photographic mapping of the Tb3+‐ or Eu3+‐activated luminescence in Czochralski‐grown gadolinium gallium garnet. Both fluorescence and thermoluminescence topographs have been prepared. For the case of Tb3+ luminescence, facet cores exhibit a contrast in thermoluminescence topographs which is the opposite of that in fluorescence.

New noncollinear acousto‐optic tunable filter using birefringence in paratellurite

T. Yano and A. Watanabe

Appl. Phys. Lett. 24, 256 (1974); http://dx.doi.org/10.1063/1.1655173 (3 pages) | Cited 4 times

Online Publication Date: 9 October 2003

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A new type of acousto‐optic tunable filter was designed using anisotropic Bragg diffraction far off the optic axis in a TeO2 crystal. The acousto‐optic figure of merit Me (n 6p 2∕ρν3) of this filter is 1200 × 10−18 sec3∕g. The filter properties are different for different values of the incident angle. For example, with 30°, tuning from 6500 to 4500 Å is obtained by changing the acoustic frequency from 72 to 117 MHz. At 6328 Å, the filter bandwidth is 8 Å and 100% transmission is obtained at an acoustic power of 170 mW for a square transducer.

Spatial distribution of electrons in a high‐pressure plasma produced by two‐step photoionization

J. S. Levine and A. Javan

Appl. Phys. Lett. 24, 258 (1974); http://dx.doi.org/10.1063/1.1655174 (4 pages) | Cited 2 times

Online Publication Date: 9 October 2003

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Experimental and theoretical investigations are made into the spatial distribution of photoelectrons produced in a high‐pressure gas containing trace amounts of tri‐n ‐propyl amine. The results show that in such a system photoelectrons may be produced over large distances, suggesting the possibility of large‐volume high‐pressure photoelectron‐pumped lasers.

Least‐squares integration method in intensity fluctuation spectroscopy of macromolecular solutions with bimodal distributions

S. P. Lee and B. Chu

Appl. Phys. Lett. 24, 261 (1974); http://dx.doi.org/10.1063/1.1655175 (3 pages) | Cited 14 times

Online Publication Date: 9 October 2003

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This letter presents a new least‐squares integration method of analysis for time‐dependent correlation functions consisting of two exponentials. It also contains an investigation of the effect of sample time on the accuracy that can be achieved in a given intensity correlation measurement by means of 24‐ and 48‐channel single‐clipped photon‐correlation spectrometers. Comparison is made with the least‐squares normal equation method using experimental as well as simulated results.

Theory of formation of phase holograms in lithium niobate

L. Young, W. K. Y. Wong, M. L. W. Thewalt, and W. D. Cornish

Appl. Phys. Lett. 24, 264 (1974); http://dx.doi.org/10.1063/1.1655176 (2 pages) | Cited 52 times

Online Publication Date: 9 October 2003

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The production of refractive‐index gratings by photoexcitation of electrons from traps followed by drift or diffusion and then retrapping is treated without the assumption made by Amodei that the migration or diffusion length is small compared to the grating wavelength. It is shown that the efficiency of hologram writing increases with increasing diffusion or migration length up to a certain limit. The spatial shift between the refractive‐index grating and the light‐intensity pattern which produces it is different according to whether drift or diffusion is operative only for short drift lengths.

Mode conversion in magneto‐optic waveguides subjected to a periodic Permalloy structure

S. C.‐C. Tseng, A. R. Reisinger, E. A. Giess, and C. G. Powell

Appl. Phys. Lett. 24, 265 (1974); http://dx.doi.org/10.1063/1.1655177 (3 pages) | Cited 8 times

Online Publication Date: 9 October 2003

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A new method to achieve periodic reversals of magnetization, necessary to attain high mode conversion efficiencies in magneto‐optic waveguides, is described. It is acomplished by means of a periodic Permalloy structure overlaying the optical propagation path. With proper bias fields, we have observed an optimum dc conversion efficiency of 80±2% at 1.15 μm in a Gd0.5Ga1 iron garnet film guide.

Hologram storage in photochromic LiNbO3†

D. L. Staebler and W. Phillips

Appl. Phys. Lett. 24, 268 (1974); http://dx.doi.org/10.1063/1.1655178 (3 pages) | Cited 41 times

Online Publication Date: 9 October 2003

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The incorporation of Mn in Fe‐doped LiNbO3 leads to photochromic behavior involving photoreversible conversion of Fe3+ to Fe2+. This process can be used to advantage to control the holographic storage sensitivity of the material.

Transmission properties of rib waveguides formed by anodization of epitaxial GaAs on Alx Ga1−x As layers

F. K. Reinhart, R. A. Logan, and T. P. Lee

Appl. Phys. Lett. 24, 270 (1974); http://dx.doi.org/10.1063/1.1655179 (3 pages) | Cited 14 times

Online Publication Date: 9 October 2003

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Two‐dimensional rib waveguides were formed by anodization etching of single‐heterostructure GaAs☒Alx Ga1−x As slab waveguides. Low transmission losses (<2 cm−1) were observed for GaAs layer thicknesses ≳0.8μm. Efficient preferential excitation of individual discrete modes and good mode stability were obtained in rib guides 0.8 μm thick, with 0.1‐μm‐high steps and width ≤10 μm.

Enhanced HBr chemical laser output with the addition of SF6

H. Oodate, M. Obara, and T. Fujioka

Appl. Phys. Lett. 24, 272 (1974); http://dx.doi.org/10.1063/1.1655180 (3 pages) | Cited 7 times

Online Publication Date: 9 October 2003

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A TE☒HBr chemical laser output was considerably enhanced, by adding SF6 to a H2 + Br2 mixture, compared with that without SF6 addition, and the simultaneous and parasitic HF chemical laser emission was observed.

ac electron tunneling at infrared frequencies: Thin‐film M‐O‐M diode structure with broad‐band characteristics

J. G. Small, G. M. Elchinger, A. Javan, Antonio Sanchez, F. J. Bachner, and D. L. Smythe

Appl. Phys. Lett. 24, 275 (1974); http://dx.doi.org/10.1063/1.1655181 (5 pages) | Cited 28 times

Online Publication Date: 9 October 2003

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A high‐speed diode element consisting of a metal‐metal‐oxide‐metal electron‐tunneling junction is formed by thin films deposited on a substrate. These junctions are integrated with deposited narrow resonant antenna structures which couple the junction to incident radiation. Broad‐band characteristics from radio and microwave frequencies to the infrared region are shown. Frequency mixing and the possibility of utilizing large numbers of elements simultaneously are also demonstrated.

Effect of hydrostatic pressure on photoconductivity and electroluminescence of GaP:N

M. I. Wolfe, H. Kressel, T. Halpern, and P. M. Raccah

Appl. Phys. Lett. 24, 279 (1974); http://dx.doi.org/10.1063/1.1655182 (3 pages) | Cited 7 times

Online Publication Date: 9 October 2003

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The electroluminescence and photoconductivity of GaP:N diodes have been studied as a function of temperature and hydrostatic pressure. The A‐line absorption and emission is relatively unaffected despite the large decrease in the electron binding energy with hydrostatic pressure. A model is discussed which accounts broadly for the experimental facts.

Photoluminescence of Zn‐implanted GaN

J. I. Pankove and J. A. Hutchby

Appl. Phys. Lett. 24, 281 (1974); http://dx.doi.org/10.1063/1.1655183 (3 pages) | Cited 23 times

Online Publication Date: 9 October 2003

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The photoluminescence spectrum of Zn‐implanted GaN peaks at 2.87 eV at room temperature. The emission efficiency decreases linearly with the logarithm of the Zn concentration in the range 1–20×1018 Zn∕cm3.

Ion implantation in silicon films on sapphire

K. H. Eklund, G. Holmén, and S. Peterström

Appl. Phys. Lett. 24, 283 (1974); http://dx.doi.org/10.1063/1.1655184 (2 pages) | Cited 3 times

Online Publication Date: 9 October 2003

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Silicon films on sapphire have been implanted with energetic boron and phosphorus ions. The annealing behaviour of the implanted layer, measured by sheet conductivity, has been found to be almost the same as for implantations in bulk silicon.

Precise measurement of coupling between optical waveguides

F. Zernike

Appl. Phys. Lett. 24, 285 (1974); http://dx.doi.org/10.1063/1.1655185 (2 pages) | Cited 4 times

Online Publication Date: 9 October 2003

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A method to measure the coupling length between optical waveguides, for synchronous and asynchronous conditions, is described.

Study of noise in He☒Cd+ laser

David C. Brown and Nathan Ginsburg

Appl. Phys. Lett. 24, 287 (1974); http://dx.doi.org/10.1063/1.1655186 (3 pages) | Cited 2 times

Online Publication Date: 9 October 2003

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An experimental investigation into noise‐generating processes in the He☒Cd+ laser is described. We report the lowest output noise (0.14%) to date for the 4416‐Å transition, as well as excellent dc stability.

High‐speed low‐power x‐ray lithography

P. V. Lenzo and E. G. Spencer

Appl. Phys. Lett. 24, 289 (1974); http://dx.doi.org/10.1063/1.1655187 (3 pages) | Cited 7 times

Online Publication Date: 9 October 2003

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High‐speed low‐power x‐ray lithography has been accomplished using 8.34‐Å radiation excited by a 75‐W electron beam. Incident x‐ray flux at the polymer film was 50 μW∕cm2. Exposure was through a 3.4‐μm‐thick silicon mask substrate with patterns in a 4000‐Å‐thick gold film. Resist thickness was 4000–5000 Å. Both positive and negative resists have been used. Exposure times were 4 min for both poly(diallyl orthophthalate) and poly(butene‐1 sulfone), 100 sec for poly(glycidyl methacrylate‐co‐ethyl acrylate), and 15 sec for epoxidized polybutadiene.

Laser‐machined GaP monolithic displays

P. D. Dapkus, W. W. Weick, and R. W. Dixon

Appl. Phys. Lett. 24, 292 (1974); http://dx.doi.org/10.1063/1.1655188 (3 pages) | Cited 3 times

Online Publication Date: 9 October 2003

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The feasibility of producing electrically and optically isolated monolithic devices from planar GaP p‐n junction material by the use of laser‐machining techniques has been demonstrated. By machining deep narrow grooves through the p‐n junction and around the areas to be contacted, it is possible to produce monolithic displays without the use of photolithography or critical etching steps. The resultant mesa devices have excellent optical definition and electrical properties. As an illustration of the technique, small (2.5‐mm‐high) monolithic seven‐bar numerics have been fabricated from green‐emitting GaP. This laser‐machining technique should be applicable to other semiconductor materials and devices such as GaAs lasers.
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Erratum: Quartz optical waveguide by ion implantation

D. T. Y. Wei, W. W. Lee, and L. R. Bloom

Appl. Phys. Lett. 24, 294 (1974); http://dx.doi.org/10.1063/1.1655189 (1 page) | Cited 1 time

Online Publication Date: 9 October 2003

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