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1 May 1974

Volume 24, Issue 9, pp. 401-449


Analysis of acoustic bulk mode excitation, by interdigital transducers

R. S. Wagers

Appl. Phys. Lett. 24, 401 (1974); http://dx.doi.org/10.1063/1.1655234 (3 pages) | Cited 7 times

Online Publication Date: 9 October 2003

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It is shown that for surface wave delay lines with parallelepiped substrate geometry, the plate modes of the substrate describe the entirety of the spurious responses of the transducers. Experimental evidence is presented which shows that by carrying out a superposition of the plate modes, both the in‐band distortion and the out‐of‐band rejection can be quantitatively predicted.

Additive and electrolytic coloration of NaF

W. C. Collins, I. Schneider, P. H. Klein, and L. R. Johnson

Appl. Phys. Lett. 24, 403 (1974); http://dx.doi.org/10.1063/1.1655235 (2 pages) | Cited 12 times

Online Publication Date: 9 October 2003

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It is shown that well‐characterized F and M centers can be introduced into NaF crystals by both additive and electrolytic coloring techniques. This success is attributed primarily to a substantial elimination of hydroxyl‐ion contamination.

Amplification of surface acoustic waves by transverse electric current in piezoelectric semiconductors

Yuri V. Gulyaev

Appl. Phys. Lett. 24, 405 (1974); http://dx.doi.org/10.1063/1.1655236 (2 pages) | Cited 4 times

Online Publication Date: 9 October 2003

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It is shown that the principal characteristic feature of the surface acoustic waves in piezoelectrics—the presence of an alternating electric field transverse to the surface, which can be of the same order of magnitude as the longitudinal field—may not only give rise to the known transverse acoustoelectric effect but also lead to amplification of surface acoustic waves by electron drift perpendicular to the surface. For Love waves in a piezoelectric semiconductor film on a highly conducting substrate, the amplification coefficient is found and the conditions necessary for amplification are investigated.

Harmonic generation and frequency mixing in laser‐produced plasmas

Ping Lee, D. V. Giovanielli, R. P. Godwin, and G. H. McCall

Appl. Phys. Lett. 24, 406 (1974); http://dx.doi.org/10.1063/1.1655237 (3 pages) | Cited 46 times

Online Publication Date: 9 October 2003

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Spectral measurements of light scattered at various angles from a laser‐produced plasma were made at the laser frequency ωL, and at ωL∕2, 3ωL∕2, 2ωL, 5ωL∕2, and 3ωL using a mode‐locked Nd:glass laser to produce intensities of 1016 W∕cm2 at the target. Signals were detected at ωL, 3ωL∕2, and 2ωL, and their intensities relative to the incident intensity were determined. Upper bounds were set for the intensities at the other frequencies.

Microscopic interferometry of laser‐produced plasmas

D. T. Attwood and L. W. Coleman

Appl. Phys. Lett. 24, 408 (1974); http://dx.doi.org/10.1063/1.1655238 (3 pages) | Cited 8 times

Online Publication Date: 9 October 2003

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Holographic microinterferometry is applied to the study of laser‐produced plasmas. A 150‐psec 1.06‐μm light pulse from a neodymium laser is used for both production and diagnostics of the plasma. An interferogram, obtained 0.5 nsec after irradiation by a 1∕2‐J pulse, is presented. It is pointed out that spatial resolution is limited by plasma motion during passage of the 100‐psec frequency‐doubled diagnostic pulse.

Effects of ionizing radiation on transmission of optical fibers

G. H. Sigel and B. D. Evans

Appl. Phys. Lett. 24, 410 (1974); http://dx.doi.org/10.1063/1.1655239 (3 pages) | Cited 12 times

Online Publication Date: 9 October 2003

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The spectral character of the optical absorption produced by ionizing radiation in several fibers and fiber materials has been measured. The nature of the damage has been identified in some of the samples and preliminary work has been successful in synthesizing radiation‐protected soda lime silicate glasses for fiber applications.

Radiation protection of fiber optic materials: Effects of oxidation and reduction

E. J. Friebele, R. J. Ginther, and G. H. Sigel

Appl. Phys. Lett. 24, 412 (1974); http://dx.doi.org/10.1063/1.1655240 (3 pages) | Cited 19 times

Online Publication Date: 9 October 2003

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The response to ionizing radiation of a suite of high‐purity silicas, a titanium‐doped silica, high‐purity germania, and silica fibers with germanium‐doped and titanium‐doped cores has been measured. The radiation sensitivity of these materials was found to depend upon the atmosphere used during a heat treatment prior to irradiation.

Gallium phosphide latching diode

A. R. Peaker and B. Hamilton

Appl. Phys. Lett. 24, 414 (1974); http://dx.doi.org/10.1063/1.1655241 (4 pages) | Cited 1 time

Online Publication Date: 9 October 2003

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A new type of green‐light‐emitting negative‐resistance gallium phosphide diode has been produced by diffusing a p‐n junction into a single n‐type liquid epitaxy growth. This growth includes a narrow high‐resistivity layer introduced by the transient incorporation of deep acceptors. The negative resistance has been shown to be due to optical feedback between the emitting junction and the photosensitive high‐resistivity region. External quantum efficiencies of 0.08% at 565 nm with a current density of 11 A cm−2 have been obtained from these devices when used in a true latching mode with a standing bias of 5 V and turn‐on turn‐off pulses of ±4 V.

Ga1−x Alx As superlattices profiled by Auger electron spectroscopy

R. Ludeke, L. Esaki, and L. L. Chang

Appl. Phys. Lett. 24, 417 (1974); http://dx.doi.org/10.1063/1.1655242 (3 pages) | Cited 33 times

Online Publication Date: 9 October 2003

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Superlattice structures made by molecular beam epitaxy are profiled by a combined technique of argon sputter etching and Auger electron spectroscopy. The superlattice, consisting of periodic layers of 50‐Å GaAs and Ga1−xAlxAs, probably represents the structure with the shortest period ever made and analyzed in monocrystalline semiconductors. Also established is the dependence of the intensity ratio of aluminum to arsenic signals of Auger transitions on the aluminum composition in Ga1−xAlxAs.

Diode detection of information stored in electron‐beam‐addressed MOS structure

G. W. Ellis, G. E. Possin, and R. H. Wilson

Appl. Phys. Lett. 24, 419 (1974); http://dx.doi.org/10.1063/1.1655243 (3 pages) | Cited 2 times

Online Publication Date: 9 October 2003

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Charge stored in an insulating layer on a semiconductor can influence the field at the surface of the semiconductor and consequently control the surface recombination velocity. This paper describes the use of this effect to control the current in a reverse‐biased p‐n junction in the semiconductor. When an electron beam is used to write and read the stored charge, the effect can be used to produce high‐resolution high‐gain devices that have a variety of potential uses in information‐storage applications. Experiments demonstrating this effect are described.

Variation of refractive index with wavelength in fused silica optical fibers and preforms

H. M. Presby

Appl. Phys. Lett. 24, 422 (1974); http://dx.doi.org/10.1063/1.1655244 (3 pages)

Online Publication Date: 9 October 2003

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The variation of the refractive index of an unclad fused silica fiber and the preform from which it was pulled was determined over the wavelength range 0.5–1.1 μm, in 0.025‐μm steps. The index is determined from an analysis of the backscattered radiation produced when light from an appropriately filtered xenon‐arc source impinges transversely upon the fiber or preform. The variation of the index of refraction of the fiber follows those of the preform and published values for bulk fused silica material to within 2 parts in 10−4, with the exception of two points at 0.65 and 0.95 μm.

Electro‐optic modulation of optical guided wave in LiNbO3 thin film fabricated by EGM method

Syuzo Fukunishi, Naoya Uchida, Shintaro Miyazawa, and Juichi Noda

Appl. Phys. Lett. 24, 424 (1974); http://dx.doi.org/10.1063/1.1655245 (3 pages) | Cited 19 times

Online Publication Date: 9 October 2003

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Experiments on light propagation and electro‐optic modulation have been made for poled LiNbO3 single‐crystal thin films fabricated by the method of epitaxial growth by melting (EGM). The values of the refractive indices are found to be no = 2.200 and ne = 2.184. A phase modulation experiment has been carried out using a Mach‐Zehnder interferometer in the region of 100 Hz‐3 MHz. The electro‐optic coefficients of the film have been determined by the phase‐compensation method, and the values obtained are r33=12 and r13=2.3×10−12 m∕V.

Infrared up‐conversion with resonantly two‐photon pumped metal vapors

D. M. Bloom, James T. Yardley, J. F. Young, and S. E. Harris

Appl. Phys. Lett. 24, 427 (1974); http://dx.doi.org/10.1063/1.1655246 (2 pages) | Cited 34 times

Online Publication Date: 9 October 2003

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We report efficient up‐conversion of low‐level ir radiation near 10 μ to the near ultraviolet. Radiation at 9.26 μ is converted to 3305 Å with a photon conversion efficiency of 58% and a corresponding power gain of 16.2. The process employs resonant two‐photon pumping of the nonallowed 3s‐3d transition in Na.

Wide‐angle electro‐optic switch

R. P. Kenan, C. M. Verber, and Van E. Wood

Appl. Phys. Lett. 24, 428 (1974); http://dx.doi.org/10.1063/1.1655247 (3 pages) | Cited 8 times

Online Publication Date: 9 October 2003

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A new electric‐field‐actuated optical switch capable of wide‐angle deflection is described. The switch element makes use of the high angular selectivity of thick Bragg gratings and can be fabricated both in bulk and in thin‐film configurations. Experimental verification of the switch action in a bulk configuration is presentd. Modulation of 35% was observed in this first observation of the effect.

Optically pumped grown GaAs mesa surface laser

F. A. Blum, K. L. Lawley, W. C. Scott, and W. C. Holton

Appl. Phys. Lett. 24, 430 (1974); http://dx.doi.org/10.1063/1.1655248 (3 pages) | Cited 10 times

Online Publication Date: 9 October 2003

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Optically pumped laser oscillation has been obtained in vapor‐grown epitaxial GaAs mesa structures which have vertical as‐grown crystalline facets furnishing the optical feedback.

Stability of highly doped negative‐differential‐conductivity diodes

A. B. Torrens

Appl. Phys. Lett. 24, 432 (1974); http://dx.doi.org/10.1063/1.1655249 (4 pages)

Online Publication Date: 9 October 2003

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If a GaAs diode is biased above threshold and if the doping N exceeds a critical value Np of about 1021 m−3, the instability due to negative differential conductivity (NDC) can settle into a stationary anode layer. This layer remains when the voltage is subsequently reduced below threshold, provided that N is sufficiently uniform near the anode. A diode in which the doping or the cross section increases toward the anode exhibits static negative differential resistance. When a diode with a small anode overdoping is biased above threshold, a depletion layer forms at the anode and, if N > Np, propagates towards the cathode. The simulation of negative conductance at 50 GHz in the LSA mode raises the possibility of high‐efficiency amplification at very high frequencies by parastable diodes.

Electrical characteristics of Al‐implanted ZnSe

B. K. Shin, Y. S. Park, and D. C. Look

Appl. Phys. Lett. 24, 435 (1974); http://dx.doi.org/10.1063/1.1655250 (2 pages) | Cited 3 times

Online Publication Date: 9 October 2003

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Aluminum was implanted in ZnSe at 90 keV to a dose of 1015 ions∕cm2 at room temperature. Hall‐effect and sheet‐resistivity measurements were made on the samples for various annealing conditions. The implanted layer is found to be degenerate n‐type having a sheet resistivity of ∼103 Ω∕□, after annealing at 900°C for 4 h.

Direct comparison of low‐energy ion backscattering with Auger electron spectroscopy in the analysis of S adsorbed on Ni

E. Taglauer and W. Heiland

Appl. Phys. Lett. 24, 437 (1974); http://dx.doi.org/10.1063/1.1655251 (3 pages) | Cited 21 times

Online Publication Date: 9 October 2003

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A comparison was made between low‐energy ion backscattering and Auger electron spectroscopy (AES) in the analysis of various coverages of sulfur on a nickel (111) crystal plane. For the intensity ratios S∕Ni a linear relationship between both techniques was found for submonolayer coverage. Using the calibration of Perdereau for AES, ion scattering intensities are calibrated and relative values are obtained for the neutralization probabilities of Ne+ and He+ scattered from Ni and S. For 1‐keV Ne+ ions neutralization is about a factor of 7 lower for scattering from S than from Ni. Ion scattering is more sensitive to the position of adsorbed atoms than AES; a shadowing effect shows that the S atoms sit on top of the Ni surface layer. Both effects result in a high sensitivity of Ne+ scattering for adsorbates such as S or O, the detection limit being some 10−4 of a monolayer.

Characterization of epitaxially grown films of (TTF) (TCNQ)

P. Chaudhari, B. A. Scott, R. B. Laibowitz, Y. Tomkiewicz, and J. B. Torrance

Appl. Phys. Lett. 24, 439 (1974); http://dx.doi.org/10.1063/1.1655252 (4 pages) | Cited 25 times

Online Publication Date: 9 October 2003

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Epitaxial films of the highly conducting organic charge‐transfer salt tetrathiafulvalinium tetracyanoquinodimethanide, (TTF) (TCNQ), grown on NaCl substrates were analyzed using electron diffraction and electron and polarized optical microscopy techniques. The films were found to orient with the high‐conductivity (TTF) (TCNQ) b axis along [110] directions of the NaCl. Preliminary optical, infrared, and electrical data obtained on these films are also presented.

Interaction of microwaves with ring domains in magnetic garnet films

H. Dötsch and H. J. Schmitt

Appl. Phys. Lett. 24, 442 (1974); http://dx.doi.org/10.1063/1.1655253 (3 pages) | Cited 2 times

Online Publication Date: 9 October 2003

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Magnetic bubble and ring domains are generated in LPE garnet films by locally exciting spin precession near the ferrimagentic resonance frequency at high microwave power densities. Due to the spin precession, radial and azimuthal forces act on the bubbles. The radii of the ring domains vary with the microwave power and the bias field. The stability range of these domains extends over a bias field range of about 0.18 times 4πMs. The dynamic behavior of the ring domains could be studied by amplitude modulation of the microwaves.

Molecular hyperpolarizabilities determined from conjugated and nonconjugated organic liquids

B. F. Levine and C. G. Bethea

Appl. Phys. Lett. 24, 445 (1974); http://dx.doi.org/10.1063/1.1655254 (3 pages) | Cited 83 times

Online Publication Date: 9 October 2003

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The magnitude and sign (positive) of the molecular hyperpolarizability γ has been determined for several mixtures of nitrobenzene and benzene. This has allowed the testing of the adequacy of Onsager's local field factors, which are found to be valid. By comparing γ of nitrobenzene with that of nitromethane, we find that the delocalized conjugated electrons are an order of magnitude more effective in contributing to γ than are the localized nonconjugated electrons.

Monolithic acoustoelectric amplifier using pseudosurface waves

Jeannine Henaff, Michel Feldmann, and Michel Le Contellec

Appl. Phys. Lett. 24, 447 (1974); http://dx.doi.org/10.1063/1.1655255 (3 pages) | Cited 6 times

Online Publication Date: 9 October 2003

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A small‐signal differential gain as large as 100 dB∕kV and a net gain of 20 dB have been observed at 160 MHz on Y+41°‐cut X‐propagation LiNbO3 material coated with an InSb thin film. Experimental results and tentative interpretation are presented.
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