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Volume 25

Issue 12 | 15 Dec | pp. 681-764

Issue 11 | 1 Dec | pp. 633-678

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Select this Article		Acoustic Fresnel zone plate transducers S. A. Farnow and B. A. Auld Appl. Phys. Lett. 25, 681 (1974); http://dx.doi.org/10.1063/1.1655359 (2 pages) \| Cited 6 times Online Publication Date: 9 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract Experimental focal plane intensity distributions are presented for a 10‐zone acoustic zone plate operating at approximately 10 MHz. The results are related to the spatial frequency response of the transducer. Some initial imaging experiments with this transducer are described along with preliminary results for an acoustic phase plate.

Select this Article		Electric field effects on biphenyl smectic A liquid crystals M. Hareng, S. Le Berre, and L. Thirant Appl. Phys. Lett. 25, 683 (1974); http://dx.doi.org/10.1063/1.1655360 (3 pages) \| Cited 29 times Online Publication Date: 9 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract Generally, smectic liquid crystals do not exhibit any effects when electric fields are applied. We report here a new alignment effect in a smectic A liquid crystal due to an ac electric field. This effect has been observed on several biphenyl smectic A liquid crystals. Results for the focal conic to homeotropic transition in the smectic phase are given. Several parameters‐temperature, voltage, and frequency‐are discussed.

Select this Article		Impact ionization model for dielectric instability and breakdown T. H. DiStefano and M. Shatzkes Appl. Phys. Lett. 25, 685 (1974); http://dx.doi.org/10.1063/1.1655361 (3 pages) \| Cited 62 times Online Publication Date: 9 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract A mechanism describing the incipient stages of intrinsic dielectric breakdown is formulated for the case of a wide‐band‐gap insulator with a low hole mobility. Dielectric instability results from the tunnel injection of electrons from the cathode contact and the subsequent impact ionization and field distortion which lead to dielectric breakdown. The model, evaluated for the parameters of SiO₂, predicts an intrinsic breakdown voltage which approaches a lower limit of V=9+ϕ for very thin films, where ϕ is the cathode contact barrier in volts. As a result, both the electric field at breakdown and the critical current density increase rapidly as the film thickness is reduced below 200 Å.

Select this Article		Optical imaging using second harmonic generation of acoustic surface waves P. S. Schenker, C. W. Lee, and R. L. Gunshor Appl. Phys. Lett. 25, 688 (1974); http://dx.doi.org/10.1063/1.1655362 (3 pages) \| Cited 2 times Online Publication Date: 9 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract Conversion of an optical image into an electrical signal is obtained by means of a harmonic generation process. The device consists of a high‐resistivity silicon semiconductor coupled to acoustic surface waves propagating on a YZ lithium niobate substrate.

Select this Article		Enhancement of transverse thermoelectric voltages in thin metallic films R. J. von Gutfeld and H. L. Caswell Appl. Phys. Lett. 25, 691 (1974); http://dx.doi.org/10.1063/1.1655363 (3 pages) \| Cited 10 times Online Publication Date: 9 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract A correlation between the surface morphology of slant‐angle deposited films and the magnitude of the transverse thermoelectric voltage has been observed. This finding has been mainly responsible for the fabrication of optical detectors with responsivities greatly enhanced over those previously reported, extending to 10.6 μ and into the cw range.

SECTION LISTING

BROWSE VOLUMES

15 Dec 1974

Volume 25, Issue 12, pp. 681-764

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Select this Article		Transparent heat‐mirror films of TiO₂∕Ag∕TiO₂ for solar energy collection and radiation insulation John C. C. Fan, Frank J. Bachner, George H. Foley, and Paul M. Zavracky Appl. Phys. Lett. 25, 693 (1974); http://dx.doi.org/10.1063/1.1655364 (3 pages) \| Cited 56 times Online Publication Date: 9 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract Transparent heat‐mirror films of TiO₂∕Ag∕TiO₂ on glass with a visible transmission of 84% (at 0.5 μm) and an infrared reflectivity of 98–99% (at 10 μm) have been fabricated by rf sputtering. Initial tests indicate that the films are thermally stable in air at 200°C and inert to water attack. Because of their excellent optical properties and apparent stability, these transparent heat‐mirror films offer great promise for use in solar‐thermal power conversion and as transparent thermal insulators.

Select this Article		Surface scattering at LSD‐wave initiation sites on nonmetallic materials C. T. Walters Appl. Phys. Lett. 25, 696 (1974); http://dx.doi.org/10.1063/1.1655365 (3 pages) \| Cited 29 times Online Publication Date: 9 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract Elliptical and circular fringe damage patterns have been observed at laser‐supported detonation (LSD) wave initiation sites on acrylic plastic and fused silica surfaces irradiated in air with 10.6‐μ laser radiation. The patterns are believed to result from a surface scattering mechanism at point‐scattering centers which may play a significant role in LSD‐wave initiation on nonmetallics.

Select this Article		Formation of substitutional alloys by ion implantation in metals J.M. Poate, W.J. DeBonte, W.M. Augustyniak, and J. A. Borders Appl. Phys. Lett. 25, 698 (1974); http://dx.doi.org/10.1063/1.1655366 (4 pages) \| Cited 6 times Online Publication Date: 9 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract Ion channeling and backscattering have been used to measure the lattice location of Au implanted at room temperature into single‐crystal Ni, Cu, Pd, and Ag. In all cases the Au atoms are found to be 100% substitutional with no thermal annealing. Au implanted at 15°K in Cu is found to be 100% substitutional. High‐dose implantations of W, a reportedly insoluble impurity in Cu, are also observed to be highly substitutional after implantation.

Select this Article		Analysis of carrier collection efficiencies of thin‐film silicon solar cells J. S. Escher and D. Redfield Appl. Phys. Lett. 25, 702 (1974); http://dx.doi.org/10.1063/1.1655367 (2 pages) \| Cited 3 times Online Publication Date: 9 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract Carrier collection efficiencies in a silicon p ‐n junction solar cell are calculated as a function of base thickness for a range of 0.1–100 μm. Using the most realistic values of carrier diffusion lengths and surface recombination velocities, it is shown that thin‐film silicon cells can yield unexpectedly good efficiencies.

Select this Article		High‐power generation from a parallel‐plates‐driven pulsed nitrogen laser Jeffrey I. Levatter and Shao‐Chi Lin Appl. Phys. Lett. 25, 703 (1974); http://dx.doi.org/10.1063/1.1655368 (3 pages) \| Cited 43 times Online Publication Date: 9 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract Preliminary results from a recent study of high‐power generation from a pulsed nitrogen laser are presented. The laser is a modified Blumlein similar to that reported by Basting et al., but uses a self‐triggered spark gap for rapid repetitive switching, a third electrode in the laser cavity for preionization, and a razor blade cathode structure to provide a uniform volume discharge. So far, output power in excess of 3 MW and pulse energy greater than 20 mJ have been obtained, but there is no evidence that the discharge is operating in a traveling‐wave mode.

Select this Article		Disorder‐induced carrier localization in silicon surface inversion layers Emil Arnold Appl. Phys. Lett. 25, 705 (1974); http://dx.doi.org/10.1063/1.1655369 (3 pages) \| Cited 50 times Online Publication Date: 9 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract Potential fluctuations in silicon surface inversion layers give rise to carrier localization in this quasi‐two‐dimensional system. A semiclassical model is used to evaluate the density of states in the tails below the bands of extended states. To investigate the carrier transport in the tails, we have measured the Hall mobility at lower temperatures and carrier concentrations than has previously been reported. The observed results cannot be accounted for by thermal excitation to extended states above a mobility gap or by thermally activated hopping in localized states. An explanation based on percolation theory is suggested.

Select this Article		Influence of device fabrication parameters on gradual degradation of (AlGa)As cw laser diodes I. Ladany and H. Kressel Appl. Phys. Lett. 25, 708 (1974); http://dx.doi.org/10.1063/1.1655370 (3 pages) \| Cited 24 times Online Publication Date: 9 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract Several factors not previously associated with cw laser degradation are shown to influence the life and reliability of (AlGa)As cw injection laser diodes. They include zinc diffusion, sawing damage, and facet erosion. When proper attention is paid to these factors, lasers showing no significant degradation for at least 2000 h can be made.

Select this Article		Nb‐diffused LiTaO₃ optical waveguides: Planar and embedded strip guides R. D. Standley and V. Ramaswamy Appl. Phys. Lett. 25, 711 (1974); http://dx.doi.org/10.1063/1.1655371 (3 pages) \| Cited 19 times Online Publication Date: 9 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract Previous results on dielectric optical waveguides made by diffusing niobium into LiTaO₃ have been extended. It is shown that the propagation constants of the thin‐film waveguide modes can be accurately calculated assuming that the refractive index decreases as the square of the distance into the film. Low‐loss single‐mode embedded strip guides made by electron resist masking techniques are also described.

Select this Article		Borosilicate clad fused silica core fiber optical waveguide with low transmission loss prepared by a high‐efficiency process F. W. Dabby, D. A. Pinnow, F. W. Ostermayer, L. G. Van Uitert, M. A. Saifi, and I. Camlibel Appl. Phys. Lett. 25, 714 (1974); http://dx.doi.org/10.1063/1.1655372 (2 pages) \| Cited 11 times Online Publication Date: 9 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract A method for making fused silica core‐borosilicate clad optical fiber waveguides is described. The process involves the growth of a needlelike layer of borosilicate glass onto the surface of a commercially available high‐purity fused silica rod by an efficient flame reaction of boron and silicon hydrides with oxygen. The needlelike layer is subsequently heat treated at relatively low temperature to form a homogeneous bubble‐free glass with a smooth surface. It is then covered with a thin protective jacket of silica and drawn into a fiber. These fibers have attenuation coefficients only slightly greater than the bulk loss of the fused silica core materials. Over the Al_1−xGa_xAs injection laser wavelength range, 0.82–0.88 μm, the loss is 5 dB∕km, while at the YAG : Nd laser wavelength, 1.06 μm, it is 3 dB∕km. The process appears to be attractive for the economical manufacture of low‐loss fibers due to its simplicity and high chemical conversion efficiency.

Select this Article		Control of optical damage in reduced LiNbO₃ by external applied field Y. Ohmori, Y. Yasojima, and Y. Inuishi Appl. Phys. Lett. 25, 716 (1974); http://dx.doi.org/10.1063/1.1655373 (2 pages) \| Cited 6 times Online Publication Date: 9 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract The correlation between the susceptibility of refractive index damage (optical damage) and photoconductivity, and the effect of external applied field have been studied in reduced LiNbO₃. The magnitude of the photocurrent is proportional to the refractive index changes. The photocurrent and the optical damage vary with the external applied field depending upon the value of the built‐in internal field. The values of the built‐in field which causes optical damage have been estimated from the extrapolation of the photocurrent and the refractive index change versus the external applied field curves. It turns out that optical damage in reduced LiNbO₃ can be easily controlled by applying an external field.

Select this Article		New observations on near band‐edge luminescence in gallium arsenide phosphide (GaAs_1−xP_x) David M. Roessler and Tao‐Yuan Wu Appl. Phys. Lett. 25, 718 (1974); http://dx.doi.org/10.1063/1.1655374 (3 pages) \| Cited 4 times Online Publication Date: 9 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract We have found that the photoluminescence peak energy of n‐type GaAs_1−xP_x crystals in the range 0.3<x<0.5 is exceptionally sensitive to the carrier concentration even in lightly doped material (< 10¹⁷ carriers cm⁻³). For all the crystals examined, the room‐temperature photoluminescence spectrum consists of a single band corresponding to near band‐edge emission. In crystals containing less than 10¹⁶ carriers cm⁻³, the peak energy variation with crystal composition lies close to a straight line connecting the direct band gaps of GaAs and GaP. In crystals deliberately doped with sulfur or selenium to concentrations in the 10¹⁶–10¹⁸‐cm⁻³ range, the variation is close to the quadratic expression for band‐gap variation with a bowing parameter of c =0.21.

Select this Article		Liquid phase epitaxial In_1−x Ga_x P_1−z As_z∕GaAs_1−y P_y quaternary (LPE)‐ternary (VPE) heterojunction lasers (x ∼0.70, z ∼0.01, y ∼0.40; λ < 6300 Å, 77°K) J. J. Coleman, W. R. Hitchens, N. Holonyak, M. J. Ludowise, W. O. Groves, and D. L. Keune Appl. Phys. Lett. 25, 725 (1974); http://dx.doi.org/10.1063/1.1655377 (3 pages) \| Cited 27 times Online Publication Date: 9 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract Laser operation (77°K) of LPE In_1−x Ga_x P_1−zAs_z∕ GaAs_1−yP_y (x ∼0.70, y ∼0.40, z ∼0.01) heterojunctions is demonstrated at λ<6300 Å. The junctions are prepared by the LPE growth of laser‐quality p‐type In_1−x Ga_x P_1−zAs_z layers on n‐type VPE GaAs_1−yP_y substrates. It is found that the problem of lattice matching In_1−xGa_xP on a GaAs_1−yP_y substrate is eased if the ternary is rendered a quaternary by the incorporation of a small amount of As in the LPE layer. During growth of the resulting p‐type quaternary layer, Zn diffuses into the n‐type ternary substrate, yielding a thin compensated active region. Laser operation of these devices is obtained at significantly shorter wavelengths and lower thresholds than for comparable homojunctions.

Select this Article		Value of electron diffusion constant in GaAs for high electric field André Castelain, Robert Perichon, Eugène Constant, and Alain Le Borgne Appl. Phys. Lett. 25, 721 (1974); http://dx.doi.org/10.1063/1.1655375 (3 pages) \| Cited 1 time Online Publication Date: 9 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract The value of the electron diffusion constant in GaAs for electric fields of nearly 50 and 150 kV∕cm has been estimated by measuring microwave impedances of two double‐step doping profile (``high‐low'') GaAs IMPATT diodes. In the investigated cases, it is shown that the electron diffusion constant does not exceed 20 and 50 cm²∕s for E =50 and 150 kV∕cm, respectively.

Select this Article		Photochemical products in coumarin laser dyes B. H. Winters, H. I. Mandelberg, and W. B. Mohr Appl. Phys. Lett. 25, 723 (1974); http://dx.doi.org/10.1063/1.1655376 (3 pages) \| Cited 29 times Online Publication Date: 9 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract The photochemical degradation processes occurring in a flashlamp‐pumped dye laser using an ethanol solution of 7‐diethylamino‐4‐methylcoumarin have been investigated in detail. The pump radiation gives rise to two irreversible reaction paths, resulting in a total of five photochemical products. One of these substances inhibits laser action because of its optical absorptivity at laser wavelengths. Suggestions for extending dye lifetimes based on this investigation are given.

Select this Article		Direct interferometric measurements of the nonlinear refractive index coefficient n₂ in laser materials E. S. Bliss, D. R. Speck, and W. W. Simmons Appl. Phys. Lett. 25, 728 (1974); http://dx.doi.org/10.1063/1.1655378 (3 pages) \| Cited 22 times Online Publication Date: 9 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract To properly account for nonlinear propagation effects in the design of a large laser system, it is necessary to know the nonlinear refractive index coefficient n₂ of each system component. We report values of n₂ for YAG, ED‐2 laser glass, EY‐1 Faraday rotator glass, and FR‐4 rotator glass. The measurements were made at 1.06 μm using a time‐resolved Mach‐Zehnder interferometer to directly observe the variation of refractive index with intensity during the transmission of pulses 150 psec in duration.

Select this Article		Laser oscillation on the green bands of XeO and KrO H. T. Powell, J. R. Murray, and C. K. Rhodes Appl. Phys. Lett. 25, 730 (1974); http://dx.doi.org/10.1063/1.1655379 (3 pages) \| Cited 51 times Online Publication Date: 9 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract Laser oscillation has been observed on the green bands of the XeO and KrO excimers using direct electron beam excitation of high‐pressure Xe or Kr containing small concentrations of O₂. These bands are transitions between molecular levels correlating to the ¹S₀ and ¹D₂ metastable levels of atomic oxygen plus ground‐state Xe or Kr. The XeO laser emission is at a number of wavelengths between 5300 and 5550 Å, while the KrO emission is at a single wavelength near the free atom line at 5577 Å. Laser pulse energies of 10 mJ and peak powers of 100 kW are seen for both excimers.

Select this Article		The blast probe: An inexpensive laser‐blast wave energy monitor Frederick J. Mayer Appl. Phys. Lett. 25, 733 (1974); http://dx.doi.org/10.1063/1.1655380 (3 pages) \| Cited 1 time Online Publication Date: 9 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract A simple‐to‐build and inexpensive Langmuir‐probe‐type device for determining the time of arrival of a laser‐produced blast wave is described. Construction details, typical results, and the method of extracting the blast wave energy are presented. The blast wave energy is shown to be easily determined from the nondimensional form of the blast wave R∕t versus R curve.

Select this Article		Superfluorescent laser emission from electron‐beam‐pumped Ar☒N₂ mixtures S. K. Searles Appl. Phys. Lett. 25, 735 (1974); http://dx.doi.org/10.1063/1.1655381 (3 pages) \| Cited 17 times Online Publication Date: 9 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract Intense superfluorescent laser pulses on the nitrogen second positive transition N₂(C)‐N₂(B) at 357.7 nm were generated by electron beam excitation of Ar☒N₂ mixtures at pressures from 600 to 5000 Torr. The pressure range over which the laser operated is explained on the basis of a simple kinetic model. The efficiency of the laser is discussed in detail.

Select this Article		Application of optical frequency shifting by means of amplitude modulation in laser‐Doppler velocimetry Peter H. Y. Lee Appl. Phys. Lett. 25, 737 (1974); http://dx.doi.org/10.1063/1.1655382 (3 pages) Online Publication Date: 9 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract A simple method of optical frequency shifting a laser‐Doppler signal is described. The method employs a local‐oscillator heterodyne system where the signal beam is modulated in amplitude by either a light chopper or a rotating linear polarizer disk. Photomixing the signal and reference beams at the photodetector will yield an output that will contain, among other terms, a term at the sum frequency of the Doppler and amplitude modulation frequencies. Due to the low frequency of amplitude modulation, this method is uniquely suited for frequency biasing of Doppler signals from scatterers moving at very low speeds.

Select this Article		Intracavity millimeter‐wave coupling modulation of a CO₂ laser Ernst Bonek and Herbert Korecky Appl. Phys. Lett. 25, 740 (1974); http://dx.doi.org/10.1063/1.1655383 (2 pages) \| Cited 5 times Online Publication Date: 9 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract Intracavity modulation of a CO₂ laser with 54 GHz in a scheme combining coupling modulation and a standing‐wave modulator is reported. Utilizing the transverse electro‐optic effect in semi‐insulating GaAs, either the P(18) or the P(20) laser line of the 10.6‐μm band was modulated to yield at least 0.1 mW for 1‐W drive power in each sideband.