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1 Jul 1974

Volume 25, Issue 1, pp. 1-96

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Crossover frequencies and turn‐off time reduction scheme for twisted nematic liquid crystal displays

T. S. Chang and E. E. Loebner

Appl. Phys. Lett. 25, 1 (1974); http://dx.doi.org/10.1063/1.1655256 (2 pages) | Cited 18 times

Online Publication Date: 9 October 2003

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The sign change of dielectric anisotropy at the characteristic crossover frequency of a nematic mixture is utilized in twisted nematic liquid crystal displays for turn‐off (decay) time reduction. This can be obtained by either (a) a two‐frequency addressing or (b) a high‐frequency erasing scheme where the high frequency is above the crossover frequency. Data are presented on Eastman Kodak 11900 nematic mixture.

Solid‐phase transport and epitaxial growth of Ge and Si

C. Canali, J. W. Mayer, G. Ottaviani, D. Sigurd, and W. van der Weg

Appl. Phys. Lett. 25, 3 (1974); http://dx.doi.org/10.1063/1.1655265 (3 pages) | Cited 20 times

Online Publication Date: 9 October 2003

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Epitaxial growth of a semiconductor film from solid solution by dissolution and transport of an evaporated semiconductor layer through a metal film has been demonstrated. A Ge growth layer of 4800 Å has been obtained by heating the system bulk‐Ge∕Al∕evaporated‐Ge at 300 °C. Electrical measurements indicate that the layers are heavily doped p type. A silicon growth of 2000 Å has been obtained by heating the system bulk‐Si∕Pd∕evaporated‐Si at 600 °C. Channeling measurements show that the Ge and Si layers are well ordered and epitaxial with the underlying substrate.

Bistability behavior of texture in cholesteric liquid crystals in an electric field

W. Greubel

Appl. Phys. Lett. 25, 5 (1974); http://dx.doi.org/10.1063/1.1655274 (3 pages) | Cited 55 times

Online Publication Date: 9 October 2003

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With the homeotropic boundary condition, the field‐induced cholesteric‐to‐nematic texture transition can show a large hysteresis effect such that at the same field strength either the cholesteric or the nematic texture is stable.

Acoustic surface wave convolver with bidirectional amplification

Leland P. Solie

Appl. Phys. Lett. 25, 7 (1974); http://dx.doi.org/10.1063/1.1655284 (4 pages) | Cited 2 times

Online Publication Date: 9 October 2003

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A surface wave convolver has been fabricated and tested with an interdigital structure which serves both as the output transducer for the convolution signal and as the biasing electrodes for bidirectional surface wave amplification of the two countertraveling input signals. The structure consists of a CdSe film on a Y Z LiNbO3 substrate with a delay path of 5 μsec. A convolution efficiency of −16 dB m has been obtained. Time reversal has been performed with the device.

Low‐frequency piezoelectric‐transducer applications of ZnO film

Tadashi Shiosaki and Akira Kawabata

Appl. Phys. Lett. 25, 10 (1974); http://dx.doi.org/10.1063/1.1655257 (2 pages) | Cited 12 times

Online Publication Date: 9 October 2003

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It is revealed that a high‐resistivity ZnO film highly oriented with the c axis perpendicular to a metal substrate surface can be used as a low‐frequency piezoelectric transducer which generates and detects compressional strain or stress perpendicular to the c axis, i.e., perpendicular to the film thickness through the piezoelectric tensor component e311 or d311. For example, tuning‐bar filters and a flat tuning‐fork filter are successfully composed of ZnO films and Elinvar‐alloy substrates whose resonant outputs are obtained even at frequencies lower than 100 kHz, and a piezoelectric microphone is composed of a ZnO film and a Ti membrane substrate.

Dynamics of liquid‐crystal twist cells

Dwight W. Berreman

Appl. Phys. Lett. 25, 12 (1974); http://dx.doi.org/10.1063/1.1655258 (4 pages) | Cited 57 times

Online Publication Date: 9 October 2003

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See Also: Erratum

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This paper describes a numerical method by which we have computed the change in molecular orientation with time in liquid‐crystal twist cells when the applied field is changed. No small‐angle approximation is made but backflow is neglected for simplicity. The general features of the results are illustrated with computations using typical elastic and viscous constants in doped MBBA, without and with a cholesteric twist term.

Laser‐induced air breakdown for 1.06‐μm radiation

D. E. Lencioni

Appl. Phys. Lett. 25, 15 (1974); http://dx.doi.org/10.1063/1.1655259 (3 pages) | Cited 28 times

Online Publication Date: 9 October 2003

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The effects of dust on 1.06‐μm laser‐induced air breakdown for 100‐nsec pulses are reported. The thresholds in clean air were measured as a function of spot size and were found to scale as λ−2 compared to the 10.6‐μm results. A single 50‐μm carbon particle present in the beam lowered the threshold to ≃5×109 W∕cm2 —a factor of approximately 0.02 that of clean air. The fractional reduction in threshold due to dust particles was comparable to that reported for 10.6‐μm breakdown.

Thermally stimulated field emission from pyroelectric LiNbO3

B. Rosenblum, P. Bräunlich, and J. P. Carrico

Appl. Phys. Lett. 25, 17 (1974); http://dx.doi.org/10.1063/1.1655260 (3 pages) | Cited 87 times

Online Publication Date: 9 October 2003

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Proximity‐imaging techniques are used to observe thermally stimulated field emission (TSFE) from single‐domain and multidomain single crystals of LiNbO3. Experimental results are reported and the mechanism responsible for this emission is discussed.

Generation of intense pulsed ion beams

S. Humphries, J. J. Lee, and R. N. Sudan

Appl. Phys. Lett. 25, 20 (1974); http://dx.doi.org/10.1063/1.1655261 (3 pages) | Cited 81 times

Online Publication Date: 9 October 2003

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An electrostatic vacuum triode is described in which it is possible to efficiently produce intense ion beams in the energy range around 100 keV for short times (∼50 nsec). In experiments to date, results have shown excellent agreement with predicted behavior. Equivalent proton currents of almost 500 A have been obtained at a peak energy in excess of 100 keV. The triode can easily be adapted to existing electron beam facilities.

Three‐anode accelerating lens system for field emission scanning electron microscopy (II)

Katsuhiro Kuroda and Tatsuro Suzuki

Appl. Phys. Lett. 25, 23 (1974); http://dx.doi.org/10.1063/1.1655262 (2 pages) | Cited 2 times

Online Publication Date: 9 October 2003

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The comparisons between the electronic computer data and the experimental results of the characteristics of a three‐anode accelerating lens system for field emission scanning electron microscopy (FESEM) are described. Experimentally two characteristics were obtained. One of them is the relation between the accelerating voltages and the control voltages for the fixed working distance. The other is the variation of the current with the accelerating voltages. In comparison with the results of the electronic computer simulation, a close coincidence was found for the former case, but for the latter the experimental results are approximately half as large as those obtained theoretically.

A closer look at laser damage in PMMA

M. P. Felix and W. Nachbar

Appl. Phys. Lett. 25, 25 (1974); http://dx.doi.org/10.1063/1.1655263 (3 pages) | Cited 5 times

Online Publication Date: 9 October 2003

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A meaningful power threshold for focused laser damage in polymethyl methacrylate (PMMA) is established. It is also shown that the type (but not the extent) of damage is identical for the Q‐switched and non‐Q‐switched laser pulses for the range of power levels used. Finally, it is explained why the observed focused laser damage in PMMA is so much more extensive in the non‐Q‐switched case than in the Q‐switched case, even though the latter type of laser pulse has an inherently higher peak power.

Equations governing threshold switching in amorphous semiconductors

P. J. Walsh and G. C. Vezzoli

Appl. Phys. Lett. 25, 28 (1974); http://dx.doi.org/10.1063/1.1655264 (3 pages) | Cited 15 times

Online Publication Date: 9 October 2003

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Extensive data are collected and presented to test the coupled‐carrier equations and attending density‐switching criterion proposed to describe nonthermal threshold switching in amorphous semiconductors. The equations and switching criterion predict in magnitude and functional form a wide range of phenomena found in the off‐state, during the switching‐on, in the on‐state, and during the switching‐off of amorphous chalcogenide films. The critical temperature noted in a variety of experiments is identified as the elevated temperature at which the switching criterion is fulfilled thermally in the presence of a small field.

Multiline mode‐locked uv‐preionized CO2 laser

M. C. Richardson

Appl. Phys. Lett. 25, 31 (1974); http://dx.doi.org/10.1063/1.1655266 (3 pages) | Cited 22 times

Online Publication Date: 9 October 2003

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A uv‐photopreionized TEA CO2☒N2 discharge is incorporated in an actively mode‐locked CO2 laser system capable of producing individual pulses of peak power of > 200 MW with durations ∼ 1 nsec. Spectral examination of the laser output indicates that oscillation occurs simultaneously on several rotational lines of the 10.4‐μ band.

Ground‐state population distribution of OH determined with a tunable uv laser

Charles C. Wang and L. I. Davis

Appl. Phys. Lett. 25, 34 (1974); http://dx.doi.org/10.1063/1.1655267 (2 pages) | Cited 19 times

Online Publication Date: 9 October 2003

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We have measured the ground‐state population distribution of OH in a flame by detecting the resonance fluorescence excited by a high‐power tunable uv laser beam. This technique provides spatial, temporal, and spectral resolutions which are not possible with absorption measurements involving conventional light sources. It should prove particularly valuable in studying the dynamics of combustion.

Monolithic integrated InxGa1−xAs Schottky‐barrier waveguide photodetector

G. E. Stillman, C. M. Wolfe, and I. Melngailis

Appl. Phys. Lett. 25, 36 (1974); http://dx.doi.org/10.1063/1.1655268 (3 pages) | Cited 15 times

Online Publication Date: 9 October 2003

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InxGa1−xAs Schottky‐barrier diodes for detection in the 0.9–1.06‐μm wavelength range have been incorporated in high‐purity GaAs planar waveguides using a selective epitaxial growth process. A quantum efficiency of 60% at 1.06 μm has been obtained for these detectors, and current gain has been observed.

Sensitivity and fatigue of LiTaO3 for holographic recording

J. M. Spinhirne and T. L. Estle

Appl. Phys. Lett. 25, 38 (1974); http://dx.doi.org/10.1063/1.1655269 (2 pages) | Cited 7 times

Online Publication Date: 9 October 2003

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The sensitivity of LiTaO3 crystals to hologram formation has been observed to vary with impurity concentration. For a writing wavelength of 488.0 nm and power density of 1.1 W∕cm2 the sensitivity varied from a value comparable to the most sensitive doped LiNbO3 for an impure crystal to a value more than 5 orders of magnitude smaller for a purer crystal. Fatigue effects were observed upon write‐erase cycling. These effects were dependent upon writing and erasure polarization and power density and could be minimized by proper choice of optical parameters.

Optical waveguiding in graded‐index layers

E. Conwell

Appl. Phys. Lett. 25, 40 (1974); http://dx.doi.org/10.1063/1.1655270 (3 pages) | Cited 14 times

Online Publication Date: 9 October 2003

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We use the wave equation and WKB approximate solutions to study the general properties of modes in a waveguide whose index of refraction decreases monotonically with distance below its surface, due to variation of either ionic or electronic contributions. The modes are found to have oscillations that increase in amplitude and in spacing with increasing depth. For modes with smaller propagation constants the oscillatory regions, as well as the decaying regions, are found to penetrate more deeply.

Determination of the sign of carrier transported across SiO2 films on Si

Z. A. Weinberg, W. C. Johnson, and M. A. Lampert

Appl. Phys. Lett. 25, 42 (1974); http://dx.doi.org/10.1063/1.1655271 (2 pages) | Cited 33 times

Online Publication Date: 9 October 2003

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A technique has been developed for determination of the sign of charge carrier transported across an insulating film on a semiconductor substrate, utilizing the charge‐carrier separation properties of a shallow p‐n junction diffused into the semiconductor. For thermally grown SiO2, unmetallized and contacted by a corona discharge in dry air, electrons are found to carry the current for both polarities of surface potential. Also demonstrated is electron‐hole pair production in the Si by electrons entering from the oxide.

Effect of crystal composition on ``quasidirect'' recombination and LED performance in the indirect region of GaAs1−xPx:N

J. C. Campbell, N. Holonyak, A. B. Kunz, and M. G. Craford

Appl. Phys. Lett. 25, 44 (1974); http://dx.doi.org/10.1063/1.1655272 (4 pages) | Cited 11 times

Online Publication Date: 9 October 2003

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The Koster‐Slater one‐band one‐site model has been employed to investigate the modulus of the wave function of an electron bound to a N isoelectronic trap in GaAs1−xPx:N as a function of crystal composition x. The no‐phonon recombination transition involving the trapped electron is enhanced as the crystal composition is changed to bring the Γ conduction band minimum, EΓ, near the N‐trap level, EN. Absorption data taken on x = 1.0 and x = 0.53 GaAs1−xPx:N are consistent with the calculated increase in the probability density in the Γ region as EΓ decreases relative to EX. The change in the internal quantum efficiency as a function of crystal composition has been calculated assuming that the nonradiative component of recombination is independent of x. By weighting the internal recombination‐radiation quantum efficiency by the photopic response of the eye, we have determined that the optimum range of crystal compositions in which to fabricate GaAs1−xPx:N LED's is 0.6 ≤ x ≤ 0.8. This result is in good agreement with current GaAs1−xPx :N LED fabrication processes.

Optical waveguides in barium sodium niobate

M. M. Hopkins and A. Miller

Appl. Phys. Lett. 25, 47 (1974); http://dx.doi.org/10.1063/1.1655273 (4 pages) | Cited 4 times

Online Publication Date: 9 October 2003

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The introduction of hydrogen into single crystals of barium sodium niobate, which occurs during the usual poling procedure, causes refractive‐index changes that permit the propagation of optical guided waves. Propagation of TM modes can be achieved even when the boundary between the hydrogenated and unhydrogenated region of the crystal is remote from the crystal faces. For thin hydrogenated layers, both TE and TM modes can be propagated. Phase‐matched frequency doubling of the cw output of a Nd☒YAG laser was demonstrated in such a layer.

Tunneling through thin MOS structures: Dependence on energy (E‐κ)

J. Maserjian and G. P. Petersson

Appl. Phys. Lett. 25, 50 (1974); http://dx.doi.org/10.1063/1.1655275 (3 pages) | Cited 33 times

Online Publication Date: 9 October 2003

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The tunneling characteristics of Cr∕SiO2∕Si structures in the thickness range 23–34 Å are reported. The E‐κ dependence in the energy range extending 3.5 eV below the oxide conduction band is determined by the thickness dependence to be approximately of the Franz form with an effective mass ratio of 0.42. Tunneling into the indirect conduction band of silicon is reduced by a thickness‐independent factor which decreases approximately exponentially with the energy below the direct band edge.

Photoemission from GaN

J. I. Pankove and H. Schade

Appl. Phys. Lett. 25, 53 (1974); http://dx.doi.org/10.1063/1.1655276 (3 pages) | Cited 60 times

Online Publication Date: 9 October 2003

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Photoemissive yield measurements were performed on degenerate n‐type and semi‐insulating GaN for heat‐cleaned and for cesiated surfaces. The photoemissive threshold for heat‐cleaned n‐type material occurs at 4.1 eV, while that for semi‐insulating material is beyond 5.5 eV, the experimental spectral range. From these measurements an upper and a lower limit of the electron affinity of heat‐cleaned GaN is derived, namely 4.1 > χ > 2.1 eV. The threshold for cesiated surfaces on both materials is lowered to 1.5 eV, and the photoyield curve exhibits a second threshold at about 3.4 eV. The occurrence of negative electron affinity is suggested for cesiated semi‐insulating GaN.

NO spectroscopy at 100 °K with a PbS0.4Se0.6 diode laser

H. Preier and W. Riedel

Appl. Phys. Lett. 25, 55 (1974); http://dx.doi.org/10.1063/1.1655277 (2 pages) | Cited 3 times

Online Publication Date: 9 October 2003

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NO spectroscopy at temperatures up to 100 °K was achieved with a pulsed PbS0.4Se0.6 diode laser. A frequency chirping rate of about 0.3 cm−1∕μs was obtained. The variation of the threshold current density and laser wavelength versus temperature is presented.

Radiation of difference frequencies produced by mixing in metal‐barrier‐metal diodes

T. K. Gustafson and T. J. Bridges

Appl. Phys. Lett. 25, 56 (1974); http://dx.doi.org/10.1063/1.1655278 (4 pages) | Cited 13 times

Online Publication Date: 9 October 2003

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Millimeter radiation obtained by difference‐frequency mixing of the P(20) and P(22) lines of the CO2 laser has been used to investigate the polarization, radiation pattern, and bias characteristics of metal‐barrier‐metal point‐contact diodes. The results are consistent with antenna theory and the electron tunneling model of the point contact. Significant enhancement in performance is expected with eventual use as a submillimeter source.

Formative time lags in CO2 laser discharges

E. A. Crawford and A. V. Phelps

Appl. Phys. Lett. 25, 59 (1974); http://dx.doi.org/10.1063/1.1655279 (3 pages) | Cited 7 times

Online Publication Date: 9 October 2003

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Time lags for the growth of power input, i.e., formative time lags, have been measured in typical CO2 laser gas mixtures at pressures from 200 to 760 Torr using parallel plane electrodes with the 1‐ and 2‐cm gaps illuminated by a trigger discharge. The measured time lags are about twice the values predicted using a single avalanche growth model and theoretical ionization and attachment coefficients.
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