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15 Nov 1974

Volume 25, Issue 10, pp. 531-629

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Determination of minority carrier lifetime using MIS tunnel diodes

S. Kar

Appl. Phys. Lett. 25, 587 (1974); http://dx.doi.org/10.1063/1.1655322 (3 pages) | Cited 13 times

Online Publication Date: 9 October 2003

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A new and simple method that employs MIS tunnel diodes is described here for the determination of minority carrier lifetime in semiconductors. For large reverse bias, a direct current was measured across Si☒SiO2‐metal devices with oxide thickness between 40 and 60 Å. This current is the generation current in the semiconductor space‐charge layer, and the lifetime is easily obtained from it.

Magnetic sensitivity of a distributed Si planar p n p n structure supporting a controlled current filament

D. J. Bartelink and G. Persky

Appl. Phys. Lett. 25, 590 (1974); http://dx.doi.org/10.1063/1.1655323 (3 pages) | Cited 1 time

Online Publication Date: 9 October 2003

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A distributed Si planar p n p n structure has been fabricated as a magnetic field detector and has yielded output signals up to 30 times those of a comparable Hall detector. The magnetic sensitivity of the structure derives from a field‐induced lateral displacement of an injected electron‐hole current filament.

C3F7I photodissociation laser initiated by a CO2‐laser‐produced plasma

W. T. Silfvast, L. H. Szeto, and O. R. Wood

Appl. Phys. Lett. 25, 593 (1974); http://dx.doi.org/10.1063/1.1655324 (3 pages) | Cited 8 times

Online Publication Date: 9 October 2003

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Ultraviolet radiation from a CO2‐laser‐produced plasma in xenon has been used to obtain laser action at 1.315 μm by photodissociation of C3F7I. The relative laser output and potential efficiency of this laser excitation technique is compared to that achieved using electrical flashlamp pumping.

Mechanism and properties of point‐contact metal‐insulator‐metal diode detectors at 10.6 μ

Bor‐long Twu and S. E. Schwarz

Appl. Phys. Lett. 25, 595 (1974); http://dx.doi.org/10.1063/1.1655325 (4 pages) | Cited 51 times

Online Publication Date: 9 October 2003

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Detection mechanisms of point‐contact MIM diodes at 10.6 μ wavelength have been studied. Detailed measurements of the static current‐voltage characteristic and its first and second derivatives as functions of bias voltage were made simultaneously with infrared sensitivity measurements. The results indicate that the static current‐voltage characteristics extend to infrared frequencies. We find that thermal effects do not contribute significantly to detection at this wavelength, and that the tungsten whisker acts as a rather efficient receiving antenna. The antenna and its shunting capacitance apply a 3×1013‐Hz ac voltage to the diode which in our experiment has amplitude 124 mV, through an impedance which is much less than the junction impedance. The diode nonlinearity d2I∕dV2 varies from 6.5×10−5 to 6.7×10−3 A∕V2 as dc bias increases from 0 to 300 mV. None of these conclusions apply to detection at 6328 Å; it is found that detection in the visible is dominated by thermal or photoconductive effects.

An acid treatment for raising the surface damage thereshold of laser glass

J. A. Ringlien, N. L. Boling, and G. Dubé

Appl. Phys. Lett. 25, 598 (1974); http://dx.doi.org/10.1063/1.1655326 (3 pages) | Cited 4 times

Online Publication Date: 9 October 2003

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Results of damage experiments on superpolished glass surfaces are briefly presented. It is found that polishing of glass beyond what is readily obtained by conventional polishing is not effective in increasing the damage threshold. Removal of contaminants is apparently more important, and this can be accomplished by treatment with hot nitric acid or water. The threshold can be increased by as much as a factor of 3 by using hot nitric acid. The effectiveness of the acid treatment is time dependent and the increase in effectiveness fits a diffusion model.

New method of determination of a metal‐semiconductor barrier height

C. Guinet

Appl. Phys. Lett. 25, 600 (1974); http://dx.doi.org/10.1063/1.1655327 (3 pages) | Cited 2 times

Online Publication Date: 9 October 2003

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By using a Pb☒Al2O3☒Al☒n☒Ge structure, it is demonstrated that the Schottky barrier height eVB at the Al☒n☒Ge contact can be determined through a study of the tunneling currents in this device at 1.2°K. One obtains a value for eVB = 0.49 eV.

Toward a zero small‐signal gain laser power amplifier

G. T. Schappert and E. E. Stark

Appl. Phys. Lett. 25, 602 (1974); http://dx.doi.org/10.1063/1.1655328 (4 pages) | Cited 6 times

Online Publication Date: 9 October 2003

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We show that small‐signal gain reduction in a CO2 laser power amplifier can be achieved by adding to the gain medium deuterated ammonia as a saturable absorber. The saturation energy, and effects of NH2D on the amplifier kinetics and energy extraction were also investigated.

II‐VI photovoltaic heterojunctions for solar energy conversion

Alan L. Fahrenbruch, Valery Vasilchenko, Fredrik Buch, Kim Mitchell, and Richard H. Bube

Appl. Phys. Lett. 25, 605 (1974); http://dx.doi.org/10.1063/1.1655329 (4 pages) | Cited 29 times

Online Publication Date: 9 October 2003

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Several different II‐VI heterojunctions show possible promise for photovoltaic conversion of solar energy. Two of these are p‐CdTe∕n‐CdS and p‐CdTe∕n‐Zn0.35Cd0.65S, which have a maximum solar efficiency of 17 and 23%, respectively. We report here specifically on the properties of p‐CdTe∕n‐CdS cells prepared (a) by close‐spaced vapor transport of CdTe onto single‐crystal CdS, and (b) by two‐source vacuum evaporation of CdS onto single‐crystal CdTe. Cells with efficiency of 4.0% have been produced without detailed attention to optimization of cell design; these cells have quantum efficiencies as high as 0.85.

Broadening coefficients for the P(20) CO2 laser transition

R. L. Abrams

Appl. Phys. Lett. 25, 609 (1974); http://dx.doi.org/10.1063/1.1655330 (3 pages) | Cited 49 times

Online Publication Date: 9 October 2003

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Accurate line‐shape and linewidth measurements have been made on the P(20) 10.6‐μm CO2 laser transition using optoacoustic spectroscopy and a tunable waveguide CO2 laser. The absorption line shape is shown to be accurately represented by a Voigt line shape and the measured broadening coefficients are γCO2=7.61±0.10, γN2=5.58±0.20, and γHe=4.88±0.18 MHz∕Torr, all measured at 298°K.

Room‐temperature heterojunction laser diodes from vapor‐grown In1−xGaxP∕GaAs structures

C. J. Nuese, M. Ettenberg, and G. H. Olsen

Appl. Phys. Lett. 25, 612 (1974); http://dx.doi.org/10.1063/1.1655331 (3 pages) | Cited 11 times

Online Publication Date: 9 October 2003

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Vapor‐grown epitaxial structures of In0.5Ga0.5P∕GaAs have yielded heterojunction laser diodes with room‐temperature threshold current densities as low as 8000 A∕cm2 for a 2.5‐μm GaAs laser cavity width. Differential external quantum efficiencies as high as 30% have been attained. Measurements suggest the existence of internally ``trapped'' laser modes due to the large refractive‐index discontinuity at the In0.5Ga0.5P☒GaAs interfaces.

Stark cell stabilization of CO2 laser

T. A. Nussmeier and R. L. Abrams

Appl. Phys. Lett. 25, 615 (1974); http://dx.doi.org/10.1063/1.1655332 (3 pages) | Cited 15 times

Online Publication Date: 9 October 2003

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A technique is demonstrated for locking of a GHz tunable waveguide CO2 laser to a voltage programmable absorption line in NH2D. Precision frequency control is demonstrated over the tuning range of the laser and long‐term frequency stability of better than ±100 kHz is demonstrated. The advantages of the present technique are that no frequency modulation of the laser is required to generate an error signal and the laser frequency is determined by a linear relationship to the Stark cell voltage.

Separation of isotopes by laser deflection of atomic beam. I. Barium

A. F. Bernhardt, D. E. Duerre, J. R. Simpson, and L. L. Wood

Appl. Phys. Lett. 25, 617 (1974); http://dx.doi.org/10.1063/1.1655333 (4 pages) | Cited 31 times

Online Publication Date: 9 October 2003

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Spatial separation of isotopes of barium in an atomic beam has been demonstrated, using radiation pressure of light from a tunable dye laser which resolved the unusually narrow isotopic hyperfine structure of the Ba (I) 5535.7‐Å resonance line. Observations of the deflected monoisotopic beam indicate an average of 25 photons scattered per atom in the deflected beam.

Monolithic GaAs injection mesa lasers with grown optical facets

F. A. Blum, K. L. Lawley, F. H. Doerbeck, and W. C. Holton

Appl. Phys. Lett. 25, 620 (1974); http://dx.doi.org/10.1063/1.1655334 (2 pages) | Cited 10 times

Online Publication Date: 9 October 2003

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Nondiscrete GaAs electrical injection lasers with vapor‐grown optical facets have been fabricated for the first time.

Monolithically integrated AlGaAs double heterostructure optical components

F. K. Reinhart and R. A. Logan

Appl. Phys. Lett. 25, 622 (1974); http://dx.doi.org/10.1063/1.1655335 (3 pages) | Cited 21 times

Online Publication Date: 9 October 2003

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Double heterostructure waveguides with contiguous regions of varying composition and dimension in the guiding layer have been grown by a modification of conventional liquid‐phase epitaxial growth procedures. This permits integration of active (lasers) and passive (modulators) optical components. Modulation of the laser intensity and envelope spectrum have been observed with a reverse bias applied to an intracavity modulator section. Low‐threshold lasers have been fabricated with far‐field radiation angles reduced by close to a factor of 3 over those in conventionally grown lasers.

Effects of Sn concentration on the critical current density of Nb3Sn formed at the Nb☒(Cu☒Sn alloy) interface

M. Suenaga, O. Horigami, and T. S. Luhman

Appl. Phys. Lett. 25, 624 (1974); http://dx.doi.org/10.1063/1.1655336 (4 pages) | Cited 20 times

Online Publication Date: 9 October 2003

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Critical current densities Jc (4 T) were measured for Nb3Sn formed by heat treating at 700°C composite wires of single‐core Nb in various Cu☒Sn alloy matrices. For given thicknesses of the Nb3Sn layers Jc increased with increasing Sn concentration in the matrix up to the single‐phase limit of Sn in Cu. Sn concentrations in excess of 8 at.% exceed the solid solubility limit of Sn in Cu at 700°C, and the Jc of the Nb3Sn formed when the composite is heat treated is an order of magnitude less than the Jc obtained for those samples whose Sn content is within the single‐phase limit. The highest Jc (4.0 T) was ∼1.8×106 A∕cm2 for a 1‐μm Nb3Sn layer formed in a 25‐mil wire with a Cu☒Sn matrix composition of 7.5 at.% (13 wt%) Sn.

Amplification of microwaves by superconducting microbridges in a four‐wave parametric mode

P. T. Parrish and R. Y. Chiao

Appl. Phys. Lett. 25, 627 (1974); http://dx.doi.org/10.1063/1.1655337 (3 pages) | Cited 15 times

Online Publication Date: 9 October 2003

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We have observed an electronic gain of 12 dB at 10 GHz in a parametric amplifier whose nonlinear element is a series of unbiased Anderson‐Dayem microbridges. The bandwidth was measured to be 1 GHz and the noise temperature to be less than 20 K.
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