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1 Dec 1974

Volume 25, Issue 11, pp. 633-678


Causes of arcing in cw CO2 convection laser discharges

William L. Nighan and W. J. Wiegand

Appl. Phys. Lett. 25, 633 (1974); http://dx.doi.org/10.1063/1.1655338 (4 pages) | Cited 43 times

Online Publication Date: 9 October 2003

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The factors causing glow‐to‐arc transition in volume‐dominated molecular gas discharges have been analyzed in terms of the collisional processes taking place in the plasma. It has been shown that arcing can be initiated by the growth of disturbances in either vibrational or translational temperature. Calculations indicate that thermal and∕or vibrational instabilities will occur for most conditions of importance to high‐power cw CO2 convection lasers, and that the growth time for these instabilities is typically on the order of 1 msec.

Cross‐field current‐driven modified ion‐cyclotron instability in an inhomogeneous magnetoplasma

K. Yatsui, T. Irie, M. Furumi, T. Imai, and M. Yatsuzuka

Appl. Phys. Lett. 25, 637 (1974); http://dx.doi.org/10.1063/1.1655339 (2 pages) | Cited 1 time

Online Publication Date: 9 October 2003

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The low‐frequency interaction of a cross‐field current with a longitudinally magnetized inhomogeneous plasma has been studied. It is found experimentally that, in addition to the ion‐cyclotron harmonic instability, a very low‐frequency instability also develops in the range ω2≪ωc i2, ωc i being the ion‐cyclotron frequency, and that at these large amplitudes nonlinear wave mixing takes place between them. Using a simple model, we show that the latter mode can be interpreted in terms of the cross‐field current‐driven modified ion‐cyclotron instability.

An empirical corresponding states relationship for the ratio of the heat capacities of polymers

R. W. Warfield, D. J. Pastine, and M. C. Petree

Appl. Phys. Lett. 25, 638 (1974); http://dx.doi.org/10.1063/1.1655340 (3 pages) | Cited 6 times

Online Publication Date: 9 October 2003

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An empirical corresponding states relationship between the ratio of the heat capacities Cp∕Cv of polymers and the reduced temperature T∕Tg has been found. This relationship is discussed in terms of corresponding states behavior. This relationship is significant and useful in that the ratio Cp∕Cv is a fundamental quantity for a solid polymer and a knowledge of the value of this ratio is useful for converting adiabatic data into the corresponding isothermal values and vice versa.

Simulation of structural anisotropy and void formation in amorphous thin films

D. Henderson, M. H. Brodsky, and P. Chaudhari

Appl. Phys. Lett. 25, 641 (1974); http://dx.doi.org/10.1063/1.1655341 (3 pages) | Cited 95 times

Online Publication Date: 9 October 2003

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We have computer simulated the structure of thin amorphous films grown from a vapor. Our hard‐sphere model shows that structural anisotropy and voids are a natural occurrence of the deposition process. The amount of unfilled space (voids) and the anisotropy have been studied as a function of the angle of incidence of the vapor stream upon the substrate.

Determination of the depth distribution of implanted helium atoms in niobium by Rutherford backscattering

J. Roth, R. Behrisch, and B. M. U. Scherzer

Appl. Phys. Lett. 25, 643 (1974); http://dx.doi.org/10.1063/1.1655342 (2 pages) | Cited 10 times

Online Publication Date: 9 October 2003

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Using Bragg's rule of additivity of the stopping powers in compounds and the Rutherford backscattering technique to determine electronic stopping powers, the depth distribution of 4‐keV helium ions implanted in niobium was determined for different implantation temperatures.

Transferred electron photoemission from InP

R. L. Bell, L. W. James, and R. L. Moon

Appl. Phys. Lett. 25, 645 (1974); http://dx.doi.org/10.1063/1.1655343 (2 pages) | Cited 23 times

Online Publication Date: 9 October 2003

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A method of obtaining efficient photoemission in the wavelength region from 1 to 2 μm, using the transferred‐electron effect in a p ‐type semiconductor, is proposed. Experimental demonstration of emission from InP in this mode is reported.

Multiple‐pass thin‐film silicon solar cell

David Redfield

Appl. Phys. Lett. 25, 647 (1974); http://dx.doi.org/10.1063/1.1655344 (2 pages) | Cited 37 times

Online Publication Date: 9 October 2003

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A technique is described by which light entering a thin film is ``trapped'' in the sense of having to traverse the film a number of times. It is shown that the use of this technique in silicon provides a solar cell with good carrier collection efficiencies even with Si only ∼2 μm thick and with ∼10‐nsec lifetime.

Improved performance of a double discharge initiated pulsed HF chemical laser

F. Voignier and M. Gastaud

Appl. Phys. Lett. 25, 649 (1974); http://dx.doi.org/10.1063/1.1655345 (2 pages) | Cited 7 times

Online Publication Date: 9 October 2003

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Operation of a pulsed HF chemical laser initiated by electric discharge is reported. Uniform transverse capacitive discharge through high‐pressure mixtures of SF6 and H2 is effected by the use of a double discharge. For the mixture SF6, H2, He (250, 20, and 280 Torr, respectively) laser output of more than 1 J per pulse with 4% electrical efficiency from an active volume of 0.06 1 has been achieved. Pulse shapes of the different transitions, spectrum measurements, and SF6 decomposition rate are reported.

Narrow‐band grating filters for thin‐film optical waveguides

R. V. Schmidt, D. C. Flanders, C. V. Shank, and R. D. Standley

Appl. Phys. Lett. 25, 651 (1974); http://dx.doi.org/10.1063/1.1655346 (2 pages) | Cited 21 times

Online Publication Date: 9 October 2003

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Criteria and tolerances are discussed for realizing grating filters with bandwidths as narrow as 0.1 Å. Techniques are presented for minimizing the adverse effect of film thickness variations which broaden filter response and raise out of band ripple. Using these techniques a grating filter fabricated on a glass thin‐film waveguide is demonstrated which has 73% reflectivity and a 3‐dB bandwidth of 0.15 Å.

Generation of tunable picosecond VUV radiation

A. H. Kung

Appl. Phys. Lett. 25, 653 (1974); http://dx.doi.org/10.1063/1.1655347 (2 pages) | Cited 19 times

Online Publication Date: 9 October 2003

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A coherent tunable vacuum ultraviolet picosecond source has been constructed by third‐order nonlinear mixing of a broadly tunable picosecond visible source and the fourth harmonic of a mode‐locked Nd : YAG laser in xenon. Tunable radiation in the VUV covering portions of the region from 1180 to 1470 Å and continuously from 1631 to 1946 Å is obtained.

Transverse double‐discharge high‐pressure glow excitation of uv lasing action in molecular nitrogen

V. Hasson, D. Preussler, J. Klimek, and H. M. von Bergmann

Appl. Phys. Lett. 25, 654 (1974); http://dx.doi.org/10.1063/1.1655348 (3 pages) | Cited 11 times

Online Publication Date: 9 October 2003

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Pulsed high‐pressure photostabilized glow discharges can be used to pump ultraviolet lasers on nanosecond time scales. This capability is demonstrated by efficient glow excitation of ultraviolet lasing action in molecular nitrogen. The glow can be generated by simultaneously initiating many electron avalanches over the cathode surface. This glow mode of operation was achieved using a transverse double‐discharge excitation principle.

Temperature dependence of pulsed discharge‐initiated HF chemical lasers using SF6∕H2, SF6∕CH4, and SF6∕C4H10 mixtures

Minoru Obara and Tomoo Fujioka

Appl. Phys. Lett. 25, 656 (1974); http://dx.doi.org/10.1063/1.1655349 (3 pages) | Cited 3 times

Online Publication Date: 9 October 2003

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Energy and spectral measurements of pulsed discharge‐initiated HF chemical lasers are presented. SF6∕H2, SF6∕CH4, and SF6∕C4H10 mixtures at 228, 296, and 373 °K are considered. At the optimum pressure for each mixture, HF chemical laser output has been found to depend weakly on temperature; optimum output energy was enhanced as the initial mixture temperature was decreased. A qualitative explanation for this behavior is offered. The peak power distribution of the HF laser lines at 228 and 296 °K is also discussed.

Light‐focusing plastic rod with low chromatic aberration

Yasuji Ohtsuka, Takao Senga, and Haruyoshi Yasuda

Appl. Phys. Lett. 25, 659 (1974); http://dx.doi.org/10.1063/1.1655350 (3 pages) | Cited 10 times

Online Publication Date: 9 October 2003

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Chromatic aberration of the light‐focusing plastic rod (LFR) prepared by the two‐step copolymerization technique of a M1‐M2 monomer pair is discussed theoretically. It is found that the chromatic aberration depends on the respective optical properties of the M1 polymer and M2 polymer alone, and that the selection of a M1‐M2 monomer pair is the most important determinant for low chromatic aberration. The requisites for low chromatic aberration are shown. Furthermore, we prepared a LFR with low chromatic aberration by using diethylene glycol bis (allyl carbonate) as M1 and 1,1,3‐trihydroperfluoropropyl methacrylate or 1,1,5‐trihydroperfluoropentyl methacrylate as M2; the chromatic aberration parameter is in good agreement with the theoretical value.

Generation of multiband 1‐ns pulses in CO2 lasers

J. F. Figueira and H. D. Sutphin

Appl. Phys. Lett. 25, 661 (1974); http://dx.doi.org/10.1063/1.1655351 (3 pages) | Cited 10 times

Online Publication Date: 9 October 2003

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A technique of generating 1‐ns pulses of CO2 laser radiation using a CdTe electro‐optic gate driven by a laser‐triggered Blumlein structure is described. By the use of intercavity absorbers, simultaneous output is obtained on multiple rotational lines of both the 9.4‐ and 10.4‐μm vibrational bands.

Theoretical efficiency in an organic photovoltaic energy conversion system

P. J. Reucroft, K. Takahashi, and H. Ullal

Appl. Phys. Lett. 25, 664 (1974); http://dx.doi.org/10.1063/1.1655352 (3 pages) | Cited 6 times

Online Publication Date: 9 October 2003

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The maximum theoretical solar conversion efficiency is calculated for an organic photovoltaic energy conversion system based on PVK‐TNF. Charge separation is assumed to take place at a Schottky barrier. At high fields (108 V m−1) the theoretical energy conversion efficiency approaches a maximum value of 2% with a 2‐eV barrier. Lower efficiencies are found for barriers greater than or lower than 2.0 eV and at lower fields.

The form and stability of current‐voltage characteristics for ideal thermal switching

J. L. Jackson and M. P. Shaw

Appl. Phys. Lett. 25, 666 (1974); http://dx.doi.org/10.1063/1.1655353 (3 pages) | Cited 8 times

Online Publication Date: 9 October 2003

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Analyses of ideal models, where heat flow is restricted to one direction, result in good qualitative agreement with the current‐voltage characteristics observed in materials that exhibit an abrupt change in electrical conductivity at a critical temperature, such as VO2. Stability criteria are proved for thermally induced ``S and N‐shaped'' characteristics in two different geometries, where the internal current or field distributions are nonuniform.

New Si planar junction diodes with uniform avalanche multiplication

K. Nishida, T. Takekawa, and M. Nakajima

Appl. Phys. Lett. 25, 669 (1974); http://dx.doi.org/10.1063/1.1655354 (2 pages)

Online Publication Date: 9 October 2003

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Si planar diodes were obtained with a steep and deep junction except for the lateral edges. This structure was made by a single diffusion of Ga through an opening of the SiO2☒Si3N4 mask. New planar diodes with unique guard rings have exhibited uniform avalanche multiplication in the broad areas, overcoming the edge breakdown. These devices are shown to be useful as avalanche photodiodes.

Electroabsorption avalanche photodiodes

G. E. Stillman, C. M. Wolfe, J. A. Rossi, and J. P. Donnelly

Appl. Phys. Lett. 25, 671 (1974); http://dx.doi.org/10.1063/1.1655355 (3 pages) | Cited 16 times

Online Publication Date: 9 October 2003

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Schottky barrier avalanche photodiodes have been fabricated on n‐type high‐purity epitaxial GaAs. These devices have their largest response at wavelengths beyond the usual absorption edge for high‐purity materials. The absorption mechanism involves the Franz‐Keldysh shift of the absorption edge, and the higher response at the longer wavelengths can be explained by a much higher ionization coefficient for holes than for electrons. The results indicate that the ratio of βp to αn is even larger than previous measurements have given.

Monte Carlo calculations of diffusion coefficient of hot electrons in n‐type GaAs

M. Abe, S. Yanagisawa, O. Wada, and H. Takanashi

Appl. Phys. Lett. 25, 674 (1974); http://dx.doi.org/10.1063/1.1655356 (2 pages) | Cited 14 times

Online Publication Date: 9 October 2003

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The Monte Carlo simulation is applied to the study of the diffusion phenomenon of hot electrons in n‐type GaAs. The model simulated is that the ensemble of electrons diffuses from the cathode toward the anode under the two‐valley semiconductor model, repeating the accelerations by the electric field and the collisions to the phonons. This electronic diffusion includes the electron transfer diffusion between valleys as well as the thermal diffusion in each valley. The electric field dependence of the electronic diffusion coefficient determined from the present new approach almost agrees with the Ruch‐Kino experimental result.

Gamma spectroscopy with insulated CdS crystals

P. Eichinger and H. Kallmann

Appl. Phys. Lett. 25, 676 (1974); http://dx.doi.org/10.1063/1.1655357 (2 pages) | Cited 1 time

Online Publication Date: 9 October 2003

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The technique of using thin insulating layers as blocking contacts has been applied to CdS crystals for γ spectroscopy. Detector operation at temperatures up to 100 °C was possible with an energy resolution of 8 keV at 122 keV for a 125‐μm‐thick crystal. During counting no external bias has been applied: Internal fields of the order of 105 V cm−1 can be generated if the insulator‐semiconductor interfaces are charged by illumination under external bias. By comparison of the amounts of charge generated by single γ quanta in a germanium crystal and in a CdS crystal, the mean energy to create a pair has been determined to 6.3 eV for CdS.
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Erratum: Are unexpected bulk waves produced by surface wave transducers?

R. W. Weinert, P. R. Emtage, J. de Klerk, and Michael R. Daniel

Appl. Phys. Lett. 25, 678 (1974); http://dx.doi.org/10.1063/1.1655358 (1 page)

Online Publication Date: 9 October 2003

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