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15 Dec 1974

Volume 25, Issue 12, pp. 681-764

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Minority carrier lifetime in InAs epilayers

H. H. Wieder and D. A. Collins

Appl. Phys. Lett. 25, 742 (1974); http://dx.doi.org/10.1063/1.1655384 (2 pages) | Cited 1 time

Online Publication Date: 9 October 2003

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The effective minority carrier lifetime in extrinsic ∼17‐μm‐thick n ‐type InAs epilayers with 1.1×1015∕cm3 donor impurities, grown by chemical vapor phase procedures on semi‐insulating GaAs, was determined to be τe(77°K)=3.18 μsec. It is assumed that the lifetime of carriers is limited by bulk Auger recombination and by surface recombination. The calculated surface lifetime, τS=3.19 μsec, dominates the bulk Auger recombination lifetime, τA=7.67×10−4 sec in VPE layers. In liquid phase homoepitaxially grown InAs epilayers of comparable thickness with donor impurities Nd=2.9×1016∕cm3 the calculated 77°K effective lifetime is τe=0.87 μsec; it is the reciprocal of the sum of the reciprocals of τS and of the calculated τA(77°K)=1.2 μsec, in good agreement with the measured τe=0.85 μsec.

Single longitudinal mode operation of cw junction lasers by frequency‐selective optical feedback

Thomas L. Paoli and José E. Ripper

Appl. Phys. Lett. 25, 744 (1974); http://dx.doi.org/10.1063/1.1655385 (3 pages) | Cited 12 times

Online Publication Date: 9 October 2003

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cw oscillation in a single longitudinal mode is reported for stripe‐geometry junction lasers operated at room temperature with frequency‐selective optical feedback. The frequency‐selective feedback, obtained by optically coupling a diffraction grating to the diode, is used to select a single mode of the normally multimode spectrum generated by the diode laser itself. Single‐frequency oscillation is observed for currents up to 30% above threshold. The oscillation frequency has a linewidth determined primarily by the internal dynamics of the diode and is tunable over the entire multimode spectrum. Additional experimental results demonstrate the homogeneous broadening of the radiative line in these lasers.

A two‐phase germanium charge‐coupled device

D. K. Schroder

Appl. Phys. Lett. 25, 747 (1974); http://dx.doi.org/10.1063/1.1655386 (3 pages)

Online Publication Date: 9 October 2003

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A germanium charge‐coupled device has been fabricated and successfully operated. It consists of a ten‐stage two‐phase device in which directionality is achieved by a two‐level oxide with self‐aligned angle‐evaporated aluminum electrodes. The device has been operated over the temperature range of 100–265°K at clock frequencies of 10–300 kHz. Transfer efficiencies of 95 and 97.5% without background charge and with 20% charge, respectively, have been measured.

Dynamic diffuse wall in magnetic bubble garnet material

G. J. Zimmer, T. M. Morris, K. Vural, and F. B. Humphrey

Appl. Phys. Lett. 25, 750 (1974); http://dx.doi.org/10.1063/1.1655387 (4 pages) | Cited 6 times

Online Publication Date: 9 October 2003

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A new dynamic domain wall has been discovered in magnetic bubble garnet materials. Single 10‐nsec exposure photographs show that it is diffuse in nature with a width that is velocity dependent. The maximum width observed is 28 μm for a wall moving at 290 m∕sec in expanding and collapsing bubbles. With a constant in‐plane field applied (50 or 100 Oe) walls moving parallel to the field become wide and diffuse in about 100 nsec, whereas walls moving perpendicular to the in‐plane field move faster but do not exhibit the diffuse boundary.

Josephson tunneling through locally thinned silicon wafers

C. L. Huang and T. Van Duzer

Appl. Phys. Lett. 25, 753 (1974); http://dx.doi.org/10.1063/1.1655388 (4 pages) | Cited 16 times

Online Publication Date: 9 October 2003

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We have made and tested Josephson junctions in which tunneling takes place through a locally thinned region in a single‐crystal silicon wafer. An etching technique is used to produce a square uniform thinned layer, 87.5 μm on a side and ≈400 Å thick. After removal of the oxide layer, superconducting metals are deposited on both sides. Temperature and magnetic field dependences of the critical current, as well as the magnitude of the current, conform very closely to the theory for a Josephson tunnel junction. This is the first type of Josephson junction employing a barrier which is accessible for modification prior to deposition of the superconducting electrodes.

Temperature dependence of ac losses and self‐field critical currents in Nb3Sn

J. F. Bussiere, M. Garber, and S. Shen

Appl. Phys. Lett. 25, 756 (1974); http://dx.doi.org/10.1063/1.1655389 (3 pages) | Cited 9 times

Online Publication Date: 9 October 2003

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ac losses and self‐field critical currents were measured in a Nb3Sn tape between 4.2 and 17 K. The observed dependence of losses on current at 4.2 K is adequately reproduced by assuming a surface barrier ΔH = 710 Oe and a bulk critical current density Jc = 5.7×106 A∕cm2. The temperature dependence of losses above 4.2 K can also be reproduced by taking into account the observed parabolic dependence of Jc on temperature and by postulating a [1 − (T∕Tc)4] dependence for ΔH. A new technique is described for measuring the critical current.

Noise in Josephson point contacts with and without rf bias

J. H. Claassen, Y. Taur, and P. L. Richards

Appl. Phys. Lett. 25, 759 (1974); http://dx.doi.org/10.1063/1.1655390 (3 pages) | Cited 14 times

Online Publication Date: 9 October 2003

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Point contact Josephson junctions operated as microwave mixers at 36 GHz show conversion gain and lower noise than cooled Schottky barrier diodes in the same application. The noise in such junctions with and without rf bias is explored both experimentally and theoretically. The noise power is found to be about a factor 2 above the thermal noise in the resistively shunted junction model. In contrast to previous reports, the inclusion of a shot noise term in the theory for no rf bias overestimates the observed noise substantially.

Chemical vapor deposition of superconducting Nb3Ge having high transition temperatures

A. I. Braginski and G. W. Roland

Appl. Phys. Lett. 25, 762 (1974); http://dx.doi.org/10.1063/1.1655391 (2 pages) | Cited 24 times

Online Publication Date: 9 October 2003

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Superconducting films of Nb3Ge have been deposited by chemical vapor deposition. Chloride vapors were produced in situ and reduced by hydrogen. The reactor used allowed surveying of phases with varying Nb∕Ge ratio. The highest transition onset temperature was 21.7 K with a transition width of 0.4 K. It occurred near the Ge‐richest boundary of the Nb3Ge phase.
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Erratum: Surface depletion region width dependence of threshold voltage shift of ion‐implanted MOS transistor

Mototaka Kamoshida and Osamu Kudoh

Appl. Phys. Lett. 25, 764 (1974); http://dx.doi.org/10.1063/1.1655392 (1 page)

Online Publication Date: 9 October 2003

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Erratum: Tantalum oxide light guide on lithium tantalate

Yong‐Kyung Lee and Shyh Wang

Appl. Phys. Lett. 25, 764 (1974); http://dx.doi.org/10.1063/1.1655393 (1 page)

Online Publication Date: 9 October 2003

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Erratum: Theory of formation of phase holograms in lithium niobate

L. Young, W. K. Y. Wong, M. L. W. Thewalt, and W. D. Cornish

Appl. Phys. Lett. 25, 764 (1974); http://dx.doi.org/10.1063/1.1655394 (1 page)

Online Publication Date: 9 October 2003

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Abstract Unavailable
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