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1 Jul 1974

Volume 25, Issue 1, pp. 1-96

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Optical polarization sensitivity of lead molybdate

L. C. DeBenedictis and J. A. Lucero

Appl. Phys. Lett. 25, 62 (1974); http://dx.doi.org/10.1063/1.1655280 (3 pages)

Online Publication Date: 9 October 2003

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The optical deflection efficiency of an acousto‐optic modulator with a lead molybdate interaction medium has been measured at optical wavelengths in the region 442–1152 nm. The crystal orientation was such that the acoustic beam propagated along the optic axis and the optical beam near the a axis. The dependence of the relative figure of merit on optical wavelength and polarization has thus been determined. The results indicate that the figure of merit M2 is independent of the optical polarization at 633 and 1152 nm, but that a considerable and unexpected sensitivity to polarization occurs between 442 and 515 nm.

Intensity anomalies in the extreme VUV spectrum of Al+3 obtained in a laser‐produced plasma

Francisco P. J. Valero

Appl. Phys. Lett. 25, 64 (1974); http://dx.doi.org/10.1063/1.1655281 (3 pages) | Cited 7 times

Online Publication Date: 9 October 2003

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The results of experiments performed to check the possibility of stimulated emission in the extreme vacuum ultraviolet (VUV) by an Al+3 laser‐generated plasma are reported. It is concluded that the spectral line intensity anomalies previously observed are not due to population inversion.

Epitaxial growth over optical gratings on GaAs

L. Yang and J. M. Ballantyne

Appl. Phys. Lett. 25, 67 (1974); http://dx.doi.org/10.1063/1.1655282 (2 pages) | Cited 2 times

Online Publication Date: 9 October 2003

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Epitaxial layers of GaAs have been successfully grown on corrugated GaAs substrates. Growth techniques were such that the corrugation was preserved during the growth process. Growth conditions are described which permit p‐n junctions containing corrugations of period suitable for electrically pumped distributed‐feedback lasers in GaAs to be produced. This work demonstrates that there are no fundamental limitations on growing buried corrugations in GaAs for a large variety of integrated optical devices.
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Comments on the distinction between ``striations'' and ``swirls'' in silicon

K. V. Ravi and C. J. Varker

Appl. Phys. Lett. 25, 69 (1974); http://dx.doi.org/10.1063/1.1655283 (3 pages) | Cited 5 times

Online Publication Date: 9 October 2003

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The distinction between ``swirls'' and ``striations'' in silicon crystals is reemphasized. The role of swirl‐nucleated stacking faults in introducing excess reverse currents in p‐n junctions is distinguished from the relatively inactive nature of striations with respect to carrier recombination‐generation effects. The suggestion of Yoshikawa and Chikawa of a crystal‐growth‐direction‐dependent electric field at striations has been examined using the electron‐beam‐induced‐current (EBIC) technique. The contrast effects observed at striations using the EBIC technique show no effects of growth‐dependent electric fields.

Frequency offset of a stabilized laser due to modulation distortion

D. P. Blair

Appl. Phys. Lett. 25, 71 (1974); http://dx.doi.org/10.1063/1.1655285 (3 pages) | Cited 3 times

Online Publication Date: 9 October 2003

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The response of a phase‐sensitive detector is examined when its input signal is derived by modulation of a laser‐saturated absorption line shape. Neglecting the laser background power curve, it is shown that second‐harmonic distortion in the modulation gives rise to the largest laser frequency offset, 0.2% of such distortion yielding approximately 4.5 kHz frequency offset. The distortion effects are also examined when the background power curve is included.

cw dye laser for ultrahigh‐resolution spectroscopy

F. Y. Wu, R. E. Grove, and S. Ezekiel

Appl. Phys. Lett. 25, 73 (1974); http://dx.doi.org/10.1063/1.1655286 (3 pages) | Cited 16 times

Online Publication Date: 9 October 2003

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Hyperfine structure in a molecular beam of I2 has been observed with a resolution of one part in 109 using a stable jet stream cw dye laser. In addition, the dye laser was long‐term stabilized to six parts in 1013 by using an I2 molecular beam reference.

Increasing the effective height of a Schottky barrier using low‐energy ion implantation

J. M. Shannon

Appl. Phys. Lett. 25, 75 (1974); http://dx.doi.org/10.1063/1.1655287 (3 pages) | Cited 55 times

Online Publication Date: 9 October 2003

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The presence of a shallow n‐type surface layer on a p‐type substrate is shown to increase the effective height of a Schottky barrier to p‐type material. The effective barrier height of Ni☒Si diodes has been increased by an amount in the range 0–0.25 eV using surface layers formed by low‐energy antimony implantation.

Extinction technique for optical storage using anisotropic color centers in alkali halides

Irwin Schneider, Matt Lehmann, and Richard Bocker

Appl. Phys. Lett. 25, 77 (1974); http://dx.doi.org/10.1063/1.1655288 (3 pages) | Cited 9 times

Online Publication Date: 9 October 2003

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An extinction technique is described for obtaining high‐contrast images while effectively increasing sensitivity in photodichroic alkali halide crystals.

Laser emission at 3577 and 3805 Å in electron‐beam‐pumped Ar☒N2 mixtures

S. K. Searles and G. A. Hart

Appl. Phys. Lett. 25, 79 (1974); http://dx.doi.org/10.1063/1.1655289 (4 pages) | Cited 48 times

Online Publication Date: 9 October 2003

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Experiments were performed with electron‐beam‐pumped Ar☒N2 mixtures. Laser emission on the second positive band transitions 3577 Å (0–1) and 3805 Å (0–2) was observed in an optical cavity fitted with Brewster angle windows. Some exciting preliminary experiments in which the laser windows were mounted at normal incidence were performed. These results indicated superfluorescent emission with an efficiency of 0.4%. The energy pathways in the irradiated mixtures were modeled and compared to the experimental results.

Degradation of AlxGa1−xAs heterojunction electroluminescent devices

M. Ettenberg, H. Kressel, and H. F. Lockwood

Appl. Phys. Lett. 25, 82 (1974); http://dx.doi.org/10.1063/1.1655290 (4 pages) | Cited 18 times

Online Publication Date: 9 October 2003

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Experimental results are presented correlating the operating life of (AlGa)As heterojunction diodes with recombination region doping and Al concentration. For a given doping level, the operating life is shown to increase with the addition of Al. The relationship between spontaneous emission degradation and lasing properties has also been studied.

Efficient high‐energy‐density molecular xenon laser

William M. Hughes, John Shannon, and Robert Hunter

Appl. Phys. Lett. 25, 85 (1974); http://dx.doi.org/10.1063/1.1655291 (3 pages) | Cited 4 times

Online Publication Date: 9 October 2003

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Electron beam excitation of pure Xe and Xe☒Ar and Xe☒Ne gas mixtures have been studied. Significant differences in the temporal character of ultraviolet output were observed. Under the best conditions laser output of 75‐MW peak power and 0.76‐J output energy were achieved. The molecular xenon laser is established as having the highest power in the wavelength region short of red.

Intense tunable picosecond pulses in the infrared

A. Laubereau, L. Greiter, and W. Kaiser

Appl. Phys. Lett. 25, 87 (1974); http://dx.doi.org/10.1063/1.1655292 (3 pages) | Cited 43 times

Online Publication Date: 9 October 2003

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Single picosecond pulses of a Nd:glass laser are used in a single‐pass generator to produce intense ultrashort infrared pulses. Starting from quantum noise, stimulated three‐photon parametric amplification over ∼12 orders of magnitude is achieved in a LiNbO3 crystal at a pump intensity of 1010 W∕cm2. Angular tuning provides a frequency range of 2500–7000 cm−1. High conversion efficiencies exceeding 1% are measured without crystal damage.

Comparison of H2 and HBr as cavity fuels in a cw HF laser

J. C. Cummings, C. M. Dube, and A. B. Witte

Appl. Phys. Lett. 25, 89 (1974); http://dx.doi.org/10.1063/1.1655293 (4 pages) | Cited 1 time

Online Publication Date: 9 October 2003

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H2 and HBr are compared as cavity fuels in a 1‐kW arc‐driven cw HF chemical laser. Closed‐cavity power is presented as a function of fuel flowrate and lasing‐axis position. Peak power observed was ∼350 W with HBr, ∼600 W with HBr and He, and ∼1100 W with H2. Spectral content of the laser beam indicated dominant 1–0 and 2–1 vibrational transitions with H2, and 2–1 and 3–2 transitions with HBr.

High‐efficiency GaAs lo‐hi‐lo IMPATT devices by liquid phase epitaxy for X band

R. E. Goldwasser and F. E. Rosztoczy

Appl. Phys. Lett. 25, 92 (1974); http://dx.doi.org/10.1063/1.1655294 (3 pages) | Cited 10 times

Online Publication Date: 9 October 2003

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n‐n+‐n epitaxial triple layers were grown by liquid phase epitaxy to fabricate lo‐hi‐lo GaAs IMPATT devices. The best diode gave 35.6% cw efficiency with 2.9‐W output power at 10.4 GHz. From a group of 151 devices, 51% had better than 22% efficiency with an average output power of 2.8 W at 10 GHz. Operating voltages varied between 40 and 55 V. A theoretical efficiency of 46% was calculated for narrow spike structures using a quasistatic computer simulation.

Superconducting current capacities of composite‐processed Laves phase tapes, V∕HfxZr1−x

K. Inoue and K. Tachikawa

Appl. Phys. Lett. 25, 94 (1974); http://dx.doi.org/10.1063/1.1655295 (3 pages) | Cited 4 times

Online Publication Date: 9 October 2003

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C‐15 crystal‐type Laves phase compounds, V2HfxZr1−x, were fabricated into a tape by a composite process in which the Laves phase layers were formed by the diffusion between the vanadium sheath and the HfxZr1−x alloy core. In the composition range 0.4 ⩾ x ⩾ 0.3, the composite tape showed the maximum values of superconducting transition temperature, upper critical field, and critical current density. The critical current of the tape did not degrade by winding into coils with diameters larger than 20 mm.
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Erratum: New noncollinear acousto‐optic tunable filter using birefringence in paratellurite

T. Yano and A. Watanabe

Appl. Phys. Lett. 25, 96 (1974); http://dx.doi.org/10.1063/1.1655296 (1 page)

Online Publication Date: 9 October 2003

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