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15 Jul 1974

Volume 25, Issue 2, pp. 97-124


Acoustic anharmonic properties of arsenic trisulfide glass

J. M. Rouvaen, E. Bridoux, M. Moriamez, and R. Torguet

Appl. Phys. Lett. 25, 97 (1974); http://dx.doi.org/10.1063/1.1655405 (3 pages) | Cited 6 times

Online Publication Date: 9 October 2003

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The usefulness of a material for nonlinear acoustic applications may be deduced from an anharmonic figure of merit. It is shown in this letter that materials well suited for acousto‐optic applications are also acoustically highly nonlinear.

Acoustic readout of charge storage on GaAs

T. W. Grudkowski and C. F. Quate

Appl. Phys. Lett. 25, 99 (1974); http://dx.doi.org/10.1063/1.1655406 (3 pages) | Cited 10 times

Online Publication Date: 9 October 2003

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We show that surface acoustic waves on GaAs can be used to read the amount of charge stored on an isolated Schottky barrier. This charge can be controlled by the light intensity which illuminates a given electrode and our technique allows one to monitor this light intensity. We propose that the effect can be used in a panel array suitable for imaging.

Oxygen uptake of obliquely deposited Ge films

William Ma and R. M. Anderson

Appl. Phys. Lett. 25, 101 (1974); http://dx.doi.org/10.1063/1.1655395 (3 pages) | Cited 8 times

Online Publication Date: 9 October 2003

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Germanium films, which were obliquely deposited in relatively high pressures of oxygen, were studied with TEM and ESCA. TEM photomicrographs of the films show that large elongated clusters appear as the pressure of oxygen during film deposition increases. The number of these clusters increases as the deposition angle (the angle between the source flux and the substrate plane) decreases. ESCA results indicate that the films consist primarily of Ge and HCl‐soluble GeO2. The amount of oxygen uptake in the films increases as the pressure of oxygen during deposition increases and∕or as the deposition angle decreases. These results are important to the understanding of the anomalous photovoltaic effect.

Spatial dependence of the carrier lifetime in thin films of silicon on sapphire

Ditmar Kranzer

Appl. Phys. Lett. 25, 103 (1974); http://dx.doi.org/10.1063/1.1655396 (3 pages) | Cited 9 times

Online Publication Date: 9 October 2003

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An experimental technique is described for determination of the generation carrier lifetime as a function of the distance of the insulator‐semiconductor interface. This method is applied to thin films of silicon on sapphire nominally 1 μ thick and doped n type.

Analytical considerations of Bragg coupling coefficients and distributed‐feedback x‐ray lasers in single crystals

Amnon Yariv

Appl. Phys. Lett. 25, 105 (1974); http://dx.doi.org/10.1063/1.1655397 (3 pages) | Cited 8 times

Online Publication Date: 9 October 2003

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Expressions for the coupling coefficients characterizing Bragg x‐ray scattering in single crystals are derived. These are used to obtain the threshold gain of a new type of x‐ray distributed‐feedback laser.

Bremsstrahlung emission from laser ‐ produced plasmas

J. F. Kephart, R. P. Godwin, and G. H. McCall

Appl. Phys. Lett. 25, 108 (1974); http://dx.doi.org/10.1063/1.1655398 (2 pages) | Cited 58 times

Online Publication Date: 9 October 2003

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The x‐ray bremsstrahlung from 4 to 50 keV emitted by laser‐produced plasmas has been measured using a Bragg crystal spectrometer. Direct spectral information was obtained in contrast to earlier filter spectroscopy. Measurements were made with focal spot powers of 1016 W∕cm2 of 1.06‐μm radiation and 1014 W∕cm2 of 10.6‐μm radiation. A definite suprathermal electron component was observed.

The 10.6‐μm absorption of KCl

Thomas F. Deutsch

Appl. Phys. Lett. 25, 109 (1974); http://dx.doi.org/10.1063/1.1655399 (4 pages) | Cited 19 times

Online Publication Date: 9 October 2003

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The 10.6‐μm absorption in most KCl is shown to be dominated by a broad absorption band near 9.7 μm. The integrated absorption of this band decreases with increasing temperature. The temperature dependence is consistent with that to be expected from the dissociation of an absorbing pair. A KCl crystal has been measured whose 10.6‐μm absorption, 6.6±2×10−5 cm−1, is at the intrinsic multiphonon level.

Saturation spectroscopy with a tunable spin‐flip Raman laser

C. K. N. Patel

Appl. Phys. Lett. 25, 112 (1974); http://dx.doi.org/10.1063/1.1655400 (3 pages) | Cited 15 times

Online Publication Date: 9 October 2003

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See Also: Erratum

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We have carried out saturation spectroscopy of the H2O line at 1889.58 cm−1 using a tunable spin‐flip Raman (SFR) laser. We have observed Lamb dip widths of the order of 200 kHz, demonstrating the usefulness of the tunable SFR laser for ultrahigh‐resolution spectroscopy (resolution ∼ 3 × 108).

The complete base profile shape in a pushed‐out diffused transistor analyzed by radiotracer methods

C. L. Jones and A. F. W. Willoughby

Appl. Phys. Lett. 25, 114 (1974); http://dx.doi.org/10.1063/1.1655401 (3 pages) | Cited 3 times

Online Publication Date: 9 October 2003

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The first determination of the complete base profile shape in a pushed‐out diffused transistor is reported. The effect of phosphorus emitter diffusion on a previously diffused gallium base has been monitored by radiotracer profiling using the isotope Ga67, and the phosphorus profile has been simultaneously measured by resistivity profiling. Definitive evidence is presented that the push‐out effect is caused wholly by a real inward migration of base impurity atmos at a rate which is much enhanced over the normal migration rate. The profile shape of gallium after push‐out shows a marked dip in concentration within the diffused emitter.

Optical striplines for integrated optical circuits in epitaxial GaAs

F. A. Blum, D. W. Shaw, and W. C. Holton

Appl. Phys. Lett. 25, 116 (1974); http://dx.doi.org/10.1063/1.1655402 (3 pages) | Cited 17 times

Online Publication Date: 9 October 2003

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Optical confinement has been observed in low‐loss (<5 dB∕cm) GaAs channel waveguides which are the optical analog of a microwave stripline.

Photobleaching of Rhodamine 6G in polyacrylonitrile matrix

S. Reich and G. Neumann

Appl. Phys. Lett. 25, 119 (1974); http://dx.doi.org/10.1063/1.1655403 (3 pages) | Cited 4 times

Online Publication Date: 9 October 2003

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The photobleaching of Rhodamine 6G (Rh:6G) in the polyacrylonitrile (PAN) matrix was studied at 5145 Å as a function of temperature. Photobleaching yield numbers were measured at room temperature and 106 °K. The quantum efficiency for fluorescence and the absorbtion cross sections were measured both for the solid polymer dye system and the liquid monomer dye solution. The observations were compared to Rh:6G in polymethylmethacrylate (PMMA). The PAN+Rh:6G system compares well to the PMMA+Rh:6G system and offers some advantages. Laser action was induced in a PAN+Rh:6G system in a longitudinally pumped polymer plate.

Planar domains in ion‐implanted magnetic bubble garnets revealed by Ferrofluid

R. Wolfe and J. C. North

Appl. Phys. Lett. 25, 122 (1974); http://dx.doi.org/10.1063/1.1655404 (3 pages) | Cited 22 times

Online Publication Date: 9 October 2003

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Magnetic closure domains in ion‐implanted surface layers associated with magnetic bubbles in the underlying garnet films have been revealed by the Bitter pattern method using Ferrofluid. This is the first direct observation of the planar magnetization produced by ion implantation in garnets with negative magnetostriction. The closure domains are very sensitive to an in‐plane magnetic field and become too small to observe in rotating fields as large as those used in field‐access bubble devices. Closure domains around an ion‐implanted pattern in a garnet film and in a thin film of Permalloy evaporated onto a bubble garnet are also shown.
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