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15 Aug 1974

Volume 25, Issue 4, pp. 175-249

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Excitation of surface‐wave acoustoelectric domains triggered by external signal

Seijiro Furukawa and Shigetaka Matsumoto

Appl. Phys. Lett. 25, 175 (1974); http://dx.doi.org/10.1063/1.1655427 (2 pages)

Online Publication Date: 9 October 2003

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Surface‐wave acoustoelectric domains were excited in a photoconductive CdS crystal. It was verified experimentally that the generation of these domains was triggered by an external signal. An adhesive tape stuck on the propagation plane prevented the excitation of the domains.

Attenuation of elastic surface waves by anharmonic interactions at low temperatures

Tetsuro Sakuma and Tsuneyoshi Nakayama

Appl. Phys. Lett. 25, 176 (1974); http://dx.doi.org/10.1063/1.1655428 (2 pages) | Cited 11 times

Online Publication Date: 9 October 2003

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Based on the theory of surfons, we present a formalism to calculate the attenuation rate of elastic surface waves at low temperatures in the high‐frequency region. A general formula for the attenuation rate due to the cubic anharmonic terms in the elastic energy of an isotropic elastic continuum is given by means of a temperature‐dependent Green's function. In a frequency region between 20 and 40 GHz at T=1°K, our result shows quite different frequency and temperature dependence ω1+n T4−n (1.9≲n≲2.2) from that obtained in the low‐frequency region.

Storage of acoustic signals in surface states in silicon

H. Hayakawa and G. S. Kino

Appl. Phys. Lett. 25, 178 (1974); http://dx.doi.org/10.1063/1.1655429 (3 pages) | Cited 10 times

Online Publication Date: 9 October 2003

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An acoustic wave storage device capable of storing an acoustic surface wave signal for times of up to several milliseconds is described. The principle of the device is based on that of the acoustic surface wave convolver, with the information stored in surface states in silicon. It is expected that the storage time will ultimately be as much as 10–30 msec for signals with modulation frequencies of tens of megahertz. At the present time, we have seen storage of pulses approximately 0.4 μsec long for times of approximately 2 msec, but some of these early devices seem to be capable of yielding storage times as long as 7 msec.

Real‐time convolution using acousto‐optic diffraction from surface waves

C. J. Kramer, M. N. Araghi, and P. Das

Appl. Phys. Lett. 25, 180 (1974); http://dx.doi.org/10.1063/1.1655430 (4 pages) | Cited 8 times

Online Publication Date: 9 October 2003

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Convolution of two signals has been obtained in real time using the efficient diffraction of laser light from acoustic surface waves. Two pulse‐modulated 45‐MHz surface waves are launched from the two ends of a surface wave delay line. Laser light enters the delay line from one side, interacts with two oppositely directed parallel acoustic beams along their widths, and exits from the other side. The diffracted light, after an optical Fourier transformation, is incident on a photodiode which produces an electrical output containing the desired convolution signal. With the present 5‐μsec interaction length and 9‐MHz transducer bandwidth, the time‐bandwidth product is 45.

Charge storage in SiO2 under low‐energy electron bombardment

J. M. Fanet and R. Poirier

Appl. Phys. Lett. 25, 183 (1974); http://dx.doi.org/10.1063/1.1655431 (3 pages) | Cited 1 time

Online Publication Date: 9 October 2003

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Low‐energy (≃ 10 eV) electron bombardment on an SiO2 layer gives rise to strong trapping at the surface and to a positive space‐charge build‐up near the Si☒SiO2 interface. The density, the capture cross section, and the energy level of the traps have been evaluated using, respectively, the constant current charging process and the quantum yield of vacuum photoemission versus wavelength.

Frequency‐addressed liquid crystal field effect

H. K. Bücher, R. T. Klingbiel, and J. P. VanMeter

Appl. Phys. Lett. 25, 186 (1974); http://dx.doi.org/10.1063/1.1655432 (3 pages) | Cited 48 times

Online Publication Date: 9 October 2003

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A new nematic material in which ϵ∥ exhibits a dielectric loss in the audio‐frequency range is reported. At 25 °C Δϵ = (ϵ∥−ϵ⊥) reverses sign at 2.5 kHz and can be as positive as 6.2 at low frequencies and as negative as −2.2 at high frequencies; the activation energy for the loss is 0.91 eV. The availability of a dielectric anisotropy of either sign depending on the frequency of the applied field allows the electrical orientation of the material with its optic axis either parallel or perpendicular to the electrodes. The possibilities for improving the voltage threshold and dynamic response of electro‐optical effects by means of a two‐frequency addressing scheme are demonstrated.

A monolithic zinc‐oxide‐on‐silicon convolver

B. T. Khuri‐Yakub and G. S. Kino

Appl. Phys. Lett. 25, 188 (1974); http://dx.doi.org/10.1063/1.1655433 (3 pages) | Cited 18 times

Online Publication Date: 9 October 2003

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A monolithic convolver using rf‐sputtered zinc oxide deposited on silicon was constructed and operated at a center frequency of 120 MHz. The electronic efficiency obtained with this device F = Pout∕Pin1Pin2, using 100‐Ω cm silicon, was −70 dB m. This corresponds to an input‐output efficiency of approximately −50 dB with a 20‐dB m reference signal. These results agreed well with our theoretical expectations for the device. The theory predicts that with a properly optimized device, the electronic efficiency F can be of the order of −50 dB m.

Proton emission from microinstabilities in an electron‐beam diode

David J. Johnson and John R. Kerns

Appl. Phys. Lett. 25, 191 (1974); http://dx.doi.org/10.1063/1.1655434 (2 pages) | Cited 5 times

Online Publication Date: 9 October 2003

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The radial proton emission from a 5‐MV 50‐kA electron‐beam diode with polyethylene anode has been spatially and spectrally measured with pinhole cameras and ion‐sensitive vacuum diode detectors. The spatial measurements indicate that the protons originate from electron‐beam pinches less than 200 μm in diameter. The proton spectrum measured between 80 keV and 3 MeV is in qualitative agreement with published data for a computer simulation of proton acceleration via the relativistic electron‐ion two‐stream instability in a tightly pinched electron beam.

Photoexpansion and ``thermal contraction'' of amorphous chalcogenide glasses

Takeo Igo, Yoshio Noguchi, and Haruo Nagai

Appl. Phys. Lett. 25, 193 (1974); http://dx.doi.org/10.1063/1.1655435 (2 pages) | Cited 22 times

Online Publication Date: 9 October 2003

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Expansion due to illumination (photoexpansion) and contraction due to heat treatment (``thermal contraction'') of As☒Se☒(S)☒Ge glass films have been observed utilizing the bimetal structures. This property is related to the reversible photodarkening effect of these chalcogenide glass films.

Photovoltaic short‐circuit minority carrier injection

W. B. Berry

Appl. Phys. Lett. 25, 195 (1974); http://dx.doi.org/10.1063/1.1655436 (2 pages) | Cited 4 times

Online Publication Date: 9 October 2003

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Short‐circuit capacitance data, for solar cells with base resistivities in the range 0.5–90 Ω cm, indicate a junction capacitance injected carrier concentration of the order 1014 cm−3 at photovoltaic current densities of 25 mA∕cm2. This short‐circuit injected carrier concentration, which is usually assumed to be zero, is nine orders of magnitude greater than the equilibrium concentration. This condition is explained in terms of an expanded interpretation of the Shockley injection relation where the chemical potential K of the electrochemical potential, μ = K−eV, dominates injection rather than the electrostatic potential V.

Epitaxial silicon p‐n junctions on polycrystalline ``ribbon'' substrates

H. Kressel, P. Robinson, S. H. McFarlane, R. V. D'Aiello, and V. L. Dalal

Appl. Phys. Lett. 25, 197 (1974); http://dx.doi.org/10.1063/1.1655437 (3 pages) | Cited 6 times

Online Publication Date: 9 October 2003

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Silicon epitaxial layers have been deposited on polycrystalline silicon ``ribbon'' substrates. It is shown that the epitaxial layer is structurally much superior to the substrate material. Good quality p‐n junctions have been epitaxially grown on these ribbons with reasonable values of minority carrier lifetime and saturation current density, but variations are observed related to structural imperfections.

Double‐heterostructure GaAs distributed‐feedback laser

C. V. Shank, R. V. Schmidt, and B. I. Miller

Appl. Phys. Lett. 25, 200 (1974); http://dx.doi.org/10.1063/1.1655438 (2 pages) | Cited 17 times

Online Publication Date: 9 October 2003

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The fabrication and operation of a GaAs☒GaAlAs heterostructure distributed‐feedback laser are described in which fine optical corrugations (≈ 1150 Å) are etched and regrown into the interface between two layers of the heterostructure. Laser operation has been observed before and after the growth of the final layer with optical pumping.

Relative cross section and depolarization of NOCI

J. M. Hoell and W. R. Wade

Appl. Phys. Lett. 25, 202 (1974); http://dx.doi.org/10.1063/1.1655439 (2 pages)

Online Publication Date: 9 October 2003

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The Raman scattering cross section of NOCl at a Raman shift of 334.4 ± 1.6 cm−1 is measured relative to the N2 Raman cross section. At 4880 Å, σNOCl∕σN2 = 0.9 ± 0.1. An upper limit of 0.08 is also reported for depolarization ratio of the NOCl Raman line.

Distributed‐feedback single heterojunction GaAs diode laser

D. R. Scifres, R. D. Burnham, and W. Streifer

Appl. Phys. Lett. 25, 203 (1974); http://dx.doi.org/10.1063/1.1655440 (4 pages) | Cited 43 times

Online Publication Date: 9 October 2003

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Laser operation utilizing distributed feedback (DFB) in single heterojunction (SH) GaAs∕GaAlAs diodes is reported. Laser wavelengths ranging from 8430 to 8560 Å were observed in various samples depending on grating period. The threshold current densities required were comparable to those of normal SH diodes.

Transport coefficients of InAs epilayers

H. H. Wieder

Appl. Phys. Lett. 25, 206 (1974); http://dx.doi.org/10.1063/1.1655441 (3 pages) | Cited 52 times

Online Publication Date: 9 October 2003

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Heteroepitaxially grown single‐crystal InAs layers exhibit anomalies in the magnetic field dependence of their Hall coefficients, their magnetoresistance, and the temperature dependence of their electron mobilities. These are attributed to a degenerate surface accumulation of electrons and are interpreted in terms of a two‐layer model, one with bulklike and the other with surfacelike charge carrier transport coefficients.

Selectively etched diffraction gratings in GaAs

L. Comerford and P. Zory

Appl. Phys. Lett. 25, 208 (1974); http://dx.doi.org/10.1063/1.1655442 (3 pages) | Cited 13 times

Online Publication Date: 9 October 2003

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Selective etching techniques are described which have been utilized to fabricate V‐groove diffraction gratings with spatial frequencies greater than 4000 lines∕mm in {100} surfaces of GaAs.

On‐state characteristics of amorphous∕crystalline heterojunctions

Kurt E. Petersen and David Adler

Appl. Phys. Lett. 25, 211 (1974); http://dx.doi.org/10.1063/1.1655443 (3 pages) | Cited 17 times

Online Publication Date: 9 October 2003

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Band models previously applied to off‐state chalcogenide‐glass∕crystalline Si heterojunctions are shown to be applicable to these devices after the threshold‐type glass is switched into the on state. In addition, it appears that the on state can be maintained by the injection of electrons from the amorphous semiconductor into n‐type Si, contrary to some double‐injection models for threshold switching.

A novel GaAs avalanche photodiode

J. Piqueras and E. Muñoz

Appl. Phys. Lett. 25, 214 (1974); http://dx.doi.org/10.1063/1.1655444 (2 pages) | Cited 2 times

Online Publication Date: 9 October 2003

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A GaAs metal‐semi‐insulating‐p‐n+ structure is described as a novel reach‐through avalanche photodiode. The p and n+ layers are simultaneously obtained by heat treatment and liquid‐phase epitaxy. The high field at the p ‐ n+ depletion layer allows one to reach multiplication factors close to 104 without avalanche breakdown. Photoinjected electrons from the metal barrier can extend the photodetection range up to 1.6 μm for Sn Schottky barriers.

Successful liquid phase epitaxial growth and optically pumped laser operation of In0.5Ga0.5P☒Ga0.4Al0.6As double‐heterostructure material

B. I. Miller and W. D. Johnston

Appl. Phys. Lett. 25, 216 (1974); http://dx.doi.org/10.1063/1.1655445 (3 pages) | Cited 7 times

Online Publication Date: 9 October 2003

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The preparation by liquid phase epitaxy of laser‐quality Aly Ga1−y As∕In0.49Ga0.51P∕Aly Ga1−y As double‐heterostructure material is reported. The structure provided optical waveguiding and carrier confinement for y≳0.6. Cleaved bars have shown laser action at ∼6200 Å, when optically pumped in the temperature range 77–130 K. The lasing threshold is 50% higher than for geometrically similar high‐quality Al0.5Ga0.5As∕GaAs∕Al0.5Ga0.5As laser material.

EPR and optical study of Fe in Nd:YAlO3 laser crystals

R. F. Belt, J. R. Latore, R. Uhrin, and J. Paxton

Appl. Phys. Lett. 25, 218 (1974); http://dx.doi.org/10.1063/1.1655446 (3 pages) | Cited 12 times

Online Publication Date: 9 October 2003

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EPR data confirm the presence of Fe impurities in single‐crystal laser hosts of YAlO3. Optical absorption in Fe:YAlO3 was measured to distinguish contributions of Fe3+ and Fe2+ to passive loss in Nd:YAlO3. YAlO3 crystals grown or annealed in H2 contain both Fe2+ and OH− which increase the absorption loss at 1.06 μm and cause fluorescence quenching.

Evaluation of CaLaSOAP: Nd for high‐power flash‐pumped Q‐switched lasers

K. B. Steinbruegge and G. D. Baldwin

Appl. Phys. Lett. 25, 220 (1974); http://dx.doi.org/10.1063/1.1655447 (3 pages) | Cited 3 times

Online Publication Date: 9 October 2003

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Pump‐induced thermal lensing and bifocusing have been measured for flash‐pumped CaLaSOAP:Nd, together with long‐pulse and Q‐switched laser efficiencies. The results show that CaLaSOAP:Nd maintains its high efficiency in the Q‐switched mode, that it is capable of average power operation exceeding 1 J at 30 pps, and that bifocusing is less severe in CaLaSOAP:Nd than in YAG:Nd.

Limit pulses in passive nonlinear absorbers

C. T. Lee

Appl. Phys. Lett. 25, 222 (1974); http://dx.doi.org/10.1063/1.1655448 (3 pages)

Online Publication Date: 9 October 2003

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We reinvestigate the propagation of coherent pulses in absorbers with nonlinear refractive index. We show that a term neglected by previous authors places an upper limit on the attainable field strength in steady‐state pulses. In ruby with a Cr3+ doping density of 1017 cm−3, for example, this limit is less than 2×106 V∕cm.

GaAs IMPATT diodes prepared by molecular beam epitaxy

A. Y. Cho, C. N. Dunn, R. L. Kuvas, and W. E. Schroeder

Appl. Phys. Lett. 25, 224 (1974); http://dx.doi.org/10.1063/1.1655449 (3 pages) | Cited 12 times

Online Publication Date: 9 October 2003

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The performance of GaAs IMPATT diodes with a low‐high‐low doping structure prepared by molecular beam epitaxy (MBE) is described. Measured small‐signal noise and high‐level power‐noise performance compare favorably to corresponding results for flat‐doping‐profile diodes. At 11 GHz a noise measure of 44 dB was obtained with 2.8‐W power output. The concomitant efficiency was 18%.

Nature of optically induced defects in Ga1−xAlxAs☒GaAs double‐heterojunction laser structures

P. Petroff, W. D. Johnston, and R. L. Hartman

Appl. Phys. Lett. 25, 226 (1974); http://dx.doi.org/10.1063/1.1655450 (3 pages) | Cited 35 times

Online Publication Date: 9 October 2003

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It is shown by transmission electron microscopy (TEM) investigation that the dark line defect (DLD) structure induced by optical pumping of undoped Ga1−xAlxAs☒GaAs double‐heterostructure (DH) laser material is identical to the DLD's which develop during laser diode operation of devices fabricated from similar p‐n structure material. This confirms the DLD generation, and subsequent failure of cw laser diodes can be a growth‐related property of Ga1−xAlxAs☒GaAs DH laser material and is not necessarily associated with p‐n junction dopants or contact metallization technology.

Magnesium and zinc ion implantation into sulfur‐doped GaP

Taroh Inada and Yashuhide Ohnuki

Appl. Phys. Lett. 25, 228 (1974); http://dx.doi.org/10.1063/1.1655451 (3 pages) | Cited 5 times

Online Publication Date: 9 October 2003

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Electrical conduction type conversion was achieved by implanting either 15‐keV Mg or Zn ions into n‐type GaP substrates at room temperature and by subsequent annealing at 900°C. The p‐n junction formed by the Zn implant lay at about 12.2 μm beneath the implanted surface and this depth was approximately 120 times deeper than that formed by the Mg implantation. For higher‐temperature annealing, diffusion played a predominant role in the final atom location of Zn implanted in GaP, but that of Mg was not so affected. Hall mobility of holes was found to be approximately 28 cm2∕V sec at room temperature in both p‐type layers formed by Mg and Zn implantations. In the Zn‐implanted samples, the room‐temperature hole concentration, determined from the Hall coefficient, was found to exceed the Zn concentration expected from ion dose.
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